Biblio

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N. Sato, Ichimura, M., Arai, E., and Yamazaki, Y., Characterization of electrical properties and photosensitivity of SnS thin films prepared by the electrochemical deposition method, Solar Energy Materials and Solar Cells, vol. 85, no. 2, pp. 153 - 165, 2005.
J. Schmidt, Kerr, M. J., and Altermatt, P. P., Coulomb-enhanced Auger recombination in crystalline silicon at intermediate and high injection densities, Journal of Applied Physics, vol. 88, pp. 1494-1497, 2000.
D. Schroder, Semiconductor material and device characterization, 3rd editionrd ed. Piscataway NJ; Hoboken N.J.: IEEE Press; Wiley, 2006.
R. Sekuler and Blake, R., Perception. New York: Alfred A. Knopf Inc, 1985.
SERI, Photovoltaics for Residential Applications. Golden, Colorado: Solar Energy Research Institute, 1984.
N. Serin, Serin, T., Horzum, Ş., and Çelik, Y., Annealing effects on the properties of copper oxide thin films prepared by chemical deposition, Semiconductor Science and Technology, vol. 20, p. 398, 2005.
T. Serin, Yildiz, A., Şahin, Ş., and Serin, N., Extraction of important electrical parameters of CuO, Physica B: Condensed Matter, vol. 406, no. 3, pp. 575 - 578, 2011.
N. Serin, Serin, ülay, Horzum, Ş., and Çelik, Y., Annealing effects on the properties of copper oxide thin films prepared by chemical deposition, Semiconductor Science and Technology, vol. 20, no. 5, pp. 398 - 401, 2005.
H. B. Serreze, Optimizing Solar Cell Performance by Simultaneous Consideration of Grid Pattern Design and Interconnect Configurations, 13th IEEE Photovoltaic Specialists Conference. Washington, D.C., USA, pp. 1-8, 1978.
W. Shafarman, Sieventritt, S., and Stolt, L., Cu(InGa)Se2 Solar Cells, in Handbook of photovoltaic science and engineering, 2nd ed., A. Luque and Hegedus, S., Eds. John Wiley & Sons, 2011, pp. 546-599.
J. N. Shive, Semiconductor Devices, Chapter 8, New Jersey: Van Nostrand, 1959.
W. Shockley, The theory of p-n Junctions in semiconductors and p-n junction transistors, Bell System Technical Journal, vol. 28, no. 3, pp. 435 - 489, 1949.
W. Shockley and Queisser, H. J., Detailed Balance Limit of Efficiency of p-n Junction Solar Cells, Journal of Applied Physics, vol. 32, pp. 510-519, 1961.
W. Shockley and Read, W. T., Statistics of the Recombinations of Holes and Electrons, Physical Review, vol. 87, p. 835, 1952.
W. Shockley, Electrons and holes in semiconductors with applications to transistor electronics. New York: van Nostrand, 1950.
G. Simmons and Birch, F., Elastic Constants of Pyrite, Journal of Applied Physics, vol. 34, no. 9, pp. 2736 - 2738, 1963.
R. A. Sinton and Cuevas, A., A Quasi-Steady-State Open-Circuit Voltage Method for Solar Cell Characterization, in 16th European Photovoltaic Solar Energy Conference, Glasgow, Scotland, 2000, pp. 1152–1155.
R. A. Sinton and Swanson, R. M., Recombination in highly injected silicon, Electron Devices, IEEE Transactions on, vol. 34, pp. 1380 - 1389, 1987.
R. A. Sinton and Cuevas, A., Contactless determination of current–voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data, Applied Physics Letters, vol. 69, pp. 2510-2512, 1996.
C. Smith and Barron, A., Synthesis and Purification of Bulk Semiconductors, 2012. [Online]. Available: http://cnx.org/content/m23936/1.7/.
F. M. Smits, Measurement of sheet resistivities with the four-point probe, Bell System Technical Journal, vol. 34, pp. 711-718, 1958.
A. B. Sproul, Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors, Journal of Applied Physics, vol. 76, pp. 2851-2854, 1994.
A. B. Sproul and Green, M. A., Improved value for the silicon intrinsic carrier concentration from 275 to 375 K, Journal of Applied Physics, vol. 70, p. 846, 1991.
A. B. Sproul, Green, M. A., and Zhao, J., Improved value for the silicon intrinsic carrier concentration at 300 K, Applied Physics Letters, vol. 57, p. 255, 1990.
A. B. Sproul and Green, M. A., Improved value for the silicon intrinsic carrier concentration from 275 to 375 K, Journal of Applied Physics, vol. 70, pp. 846-854, 1991.

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