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J. Szlufcik, Sivoththaman, S., Nlis, J. F., Mertens, R. P., and Van-Overstraeten, R., Low-cost industrial technologies of crystalline silicon solar cells, Proceedings-of-the-IEEE, vol. 85. pp. 711-730, 1997.
R. M. Swanson, Approaching the 29% limit efficiency of silicon solar cells, Thirty-First IEEE Photovoltaic Specialists Conference. 01/2005, Lake buena Vista, FL, USA, pp. 889-94, 2005.
K. Sun et al., Over 9% Efficient Kesterite Cu 2 ZnSnS 4 Solar Cell Fabricated by Using Zn 1- x Cd x S Buffer Layer, Advanced Energy Materials, vol. 6, no. 12, p. 1600046, 2016.
B. G. Streetman, Solid State Electronic Devices. Prentice Hall, 2000.
M. J. Stocks, Carr, A. J., and Blakers, A. W., Texturing of polycrystalline silicon, Solar Energy Materials and Solar Cells, vol. 40, pp. 33 - 42, 1996.
C. Steinhagen, Panthani, M. G., Akhavan, V., Goodfellow, B., Koo, B., and Korgel, B. A., Synthesis of Cu2ZnSnS4 nanocrystals for use in low-cost photovoltaics, Journal of the American Chemical Society, vol. 131, pp. 12554–12555, 2009.
A. B. Sproul and Green, M. A., Improved value for the silicon intrinsic carrier concentration from 275 to 375 K, Journal of Applied Physics, vol. 70, p. 846, 1991.
A. B. Sproul, Green, M. A., and Zhao, J., Improved value for the silicon intrinsic carrier concentration at 300 K, Applied Physics Letters, vol. 57, p. 255, 1990.
A. B. Sproul and Green, M. A., Improved value for the silicon intrinsic carrier concentration from 275 to 375 K, Journal of Applied Physics, vol. 70, pp. 846-854, 1991.
A. B. Sproul, Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors, Journal of Applied Physics, vol. 76, pp. 2851-2854, 1994.
F. M. Smits, Measurement of sheet resistivities with the four-point probe, Bell System Technical Journal, vol. 34, pp. 711-718, 1958.
c. smith and Barron, A., Synthesis and Purification of Bulk Semiconductors, 2012. [Online]. Available: http://cnx.org/content/m23936/1.7/.
R. A. Sinton and Cuevas, A., A Quasi-Steady-State Open-Circuit Voltage Method for Solar Cell Characterization, in 16th European Photovoltaic Solar Energy Conference, Glasgow, Scotland, 2000, pp. 1152–1155.
R. A. Sinton and Swanson, R. M., Recombination in highly injected silicon, Electron Devices, IEEE Transactions on, vol. 34, pp. 1380 - 1389, 1987.
R. A. Sinton and Cuevas, A., Contactless determination of current–voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data, Applied Physics Letters, vol. 69, pp. 2510-2512, 1996.
G. Simmons and Birch, F., Elastic Constants of Pyrite, Journal of Applied Physics, vol. 34, no. 9, pp. 2736 - 2738, 1963.
W. Shockley and Read, W. T., Statistics of the Recombinations of Holes and Electrons, Physical Review, vol. 87, p. 835, 1952.
W. Shockley, Electrons and holes in semiconductors with applications to transistor electronics. New York: van Nostrand, 1950.
W. Shockley and Queisser, H. J., Detailed Balance Limit of Efficiency of p-n Junction Solar Cells, Journal of Applied Physics, vol. 32, pp. 510-519, 1961.
J. N. Shive, Semiconductor Devices, Chapter 8, New Jersey: Van Nostrand, 1959.
H. B. Serreze, Optimizing Solar Cell Performance by Simultaneous Consideration of Grid Pattern Design and Interconnect Configurations, 13th IEEE Photovoltaic Specialists Conference. Washington, D.C., USA, pp. 1-8, 1978.
N. Serin, Serin, T., Horzum, Ş., and Çelik, Y., Annealing effects on the properties of copper oxide thin films prepared by chemical deposition, Semiconductor Science and Technology, vol. 20, p. 398, 2005.
T. Serin, Yildiz, A., Şahin, Ş., and Serin, N., Extraction of important electrical parameters of CuO, Physica B: Condensed Matter, vol. 406, no. 3, pp. 575 - 578, 2011.
N. Serin, Serin, ülay, Horzum, Ş., and Çelik, Y., Annealing effects on the properties of copper oxide thin films prepared by chemical deposition, Semiconductor Science and Technology, vol. 20, no. 5, pp. 398 - 401, 2005.
SERI, Photovoltaics for Residential Applications. Golden, Colorado: Solar Energy Research Institute, 1984.

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