Biblio

Export 293 results:
Author Title [ Type(Desc)] Year
Journal Article
M. A. Green and Keevers, M. J., Optical properties of intrinsic silicon at 300 K, Progress in Photovoltaics: Research and Applications, vol. 3, pp. 189 - 192, 1995.
J. L. Merz, Kukimoto, H., Nassau, K., and Shiever, J. W., Optical Properties of Substitutional Donors in ZnSe, Physical Review B, vol. 6, no. 2, pp. 545 - 556, 1972.
S. Adachi and Taguchi, T., Optical properties of ZnSe, Physical Review B, vol. 43, no. 12, pp. 9569 - 9577, 1991.
C. J. Hages, Koeper, M. J., and Agrawal, R., Optoelectronic and material properties of nanocrystal-based \{CZTSe\} absorbers with Ag-alloying, Solar Energy Materials and Solar Cells, vol. 145, Part 3, pp. 342 - 348, 2016.
K. Sun et al., Over 9% Efficient Kesterite Cu 2 ZnSnS 4 Solar Cell Fabricated by Using Zn 1- x Cd x S Buffer Layer, Advanced Energy Materials, vol. 6, no. 12, p. 1600046, 2016.
M. A. Green, The path to 25% silicon solar cell efficiency: History of silicon cell evolution, Progress in Photovoltaics: Research and Applications, vol. 17, pp. 183-189, 2009.
D. B. Mitzi, Gunawan, O., Todorov, T. K., Wang, K., and Guha, S., The path towards a high-performance solution-processed kesterite solar cell, Solar Energy Materials and Solar Cells, vol. 95, pp. 1421 - 1436, 2011.
S. M. Hu, Fahey, P., and Sutton, P., On Phosphorus Diffusion in Silicon, On Phosphorus Diffusion in Silicon, vol. 54, pp. 6912-6922, 1983.
R. H. Bube and Lind, E. L., Photoconductivity of Zinc Selenide Crystals and a Correlation of Donor and Acceptor Levels in II-VI Photoconductors, Phys. Rev., vol. 110, pp. 1040–1049, 1958.
B. Thomas, Ellmer, K., Bohne, W., Röhrich, J., Kunst, M., and Tributsch, H., Photoeffects in cobalt doped pyrite (FeS 2 ) films, Solid State Communications, vol. 111, no. 5, pp. 235 - 240, 1999.
E. F. Kingsbury and Ohl, R. S., Photoelectric Properties of Tonically Bombarded Silicon, Bell Systems Technical Journal, vol. 31, pp. 802-815, 1952.
R. S. Mane, Sankapal, B. R., and Lokhande, C. D., Photoelectrochemical cells based on chemically deposited nanocrystalline Bi2S3 thin films, Materials Chemistry and Physics, vol. 60, no. 2, pp. 196 - 203, 1999.
K. Hyun Yoon, Choi, W. Jin, and Kang, D. Heon, Photoelectrochemical properties of copper oxide thin films coated on an n-Si substrate, Thin Solid Films, vol. 372, pp. 250 - 256, 2000.
T. Fuyuki, Kondo, H., Yamazaki, T., Takahashi, Y., and Uraoka, Y., Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence, Applied Physics Letters, vol. 86, p. 262108, 2005.
A. Goetzberger and Hoffmann, V. U., Photovoltaic Solar Energy Generation, p. 232, 2005.
J. G. Fossum, Physical operation of back-surface-field silicon solar cells, IEEE Transactions on Electron Devices, vol. 24, pp. 322 - 325, 1977.
W. A. Wooster, Physical properties and atomic arrangements in crystals, Reports on Progress in Physics, vol. 16, no. 1, pp. 62 - 82, 2002.
J. Nelson, The Physics of Solar Cells, p. 355, 2003.
P. Würfel, Physics of Solar Cells, p. 183, 2009.
D. Avellaneda, Nair, M. T. S., and Nair, P. K., Polymorphic Tin Sulfide Thin Films of Zinc Blende and Orthorhombic Structures by Chemical Deposition, Journal of The Electrochemical Society, vol. 155, no. 7, p. D517, 2008.
D. Chauhan, Satsangi, V. R., Dass, S., and Shrivastav, R., Preparation and characterization of nanostructured CuO thin films for photoelectrochemical splitting of water, Bulletin of Materials Science, vol. 29, p. 709, 2006.
H. Katagiri, Sasaguchi, N., Hando, S., Hoshino, S., Ohashi, J., and Yokota, T., Preparation and evaluation of Cu2ZnSnS4 thin films by sulfurization of E-B evaporated precursors, Solar Energy Materials and Solar Cells, vol. 49, pp. 407 - 414, 1997.
R. Chandramohan, Sanjeeviraja, C., and Mahalingam, T., Preparation of Zinc Selenide Thin Films by Electrodeposition Technique for Solar Cell Applications, physica status solidi (a), vol. 163, no. 2, pp. R11 - R12, 1997.
L. Ehm, Knorr, K., Dera, P., Krimmel, A., Bouvier, P., and Mezouar, M., Pressure-induced structural phase transition in the IV–VI semiconductor SnS, Journal of Physics: Condensed Matter, vol. 16, no. 21, pp. 3545 - 3554, 2004.
C. D. Lokhande et al., Process and characterisation of chemical bath deposited manganese sulphide (MnS) thin films, Thin Solid Films, vol. 330, no. 2, pp. 70 - 75, 1998.

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