Biblio

Export 293 results:
Author [ Title(Asc)] Type Year
A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 
L
R. S. Ohl, “Light-Sensitive Electric Device”, U.S. Patent, vol. 2, p. 402, 602, 1941.
P. Campbell and Green, M. A., “Light trapping properties of pyramidally textured surfaces”, Journal of Applied Physics, vol. 62, no. 1, p. 243, 1987.
C. Rincón and Ramírez, F. J., “Lattice vibrations of CuInSe2 and CuGaSe2 by Raman microspectrometry”, Journal of Applied Physics, vol. 72, 1992.
K
F. O. R. B. E. S. ROBERTSON, “KNOOP HARDNESS NUMBERS FOR 127 OPAQUE MINERALS”, Geological Society of America Bulletin, vol. 72, no. 4, p. 621, 1961.
I
R. Einhaus, Vazsonyi, E., Szlufcik, J., Nijs, J., and Mertens, R., “Isotropic texturing of multicrystalline silicon wafers with acidic texturing solutions”, Twenty Sixth IEEE Photovoltaic Specialists Conference. New York, NY, USA, pp. 167-170, 1451, 1997.
S. C. Baker-Finch, McIntosh, K. R., and Terry, M. L., “Isotextured Silicon Solar Cell Analysis and Modeling 1: Optics”, IEEE Journal of Photovoltaics, vol. 2, no. 4, pp. 457 - 464, 2012.
W. Guang-Pu et al., “Investigation on SnS film by RF sputtering for photovoltaic application”, in 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC), Waikoloa, HI, USA, 1994.
S. M. Whittingham and Thompson, A. H., “Intercalation and lattice expansion in titanium disulfide”, The Journal of Chemical Physics, vol. 62, no. 4, p. 1588, 1975.
E. Yablonovich and Cody, G. D., “Intensity Enhancement in Textured Optical Sheets for Solar Cells”, IEEE Transactions on Electron Devices, vol. ED-29, pp. 300-305, 1982.
K. R. McIntosh and Honsberg, C. B., “The Influence of Edge Recombination on a Solar Cell’s IV Curve”, 16th European Photovoltaic Solar Energy Conference. 2000.
R. B. Kale and Lokhande, C. D., “Influence of air annealing on the structural, optical and electrical properties of chemically deposited CdSe nano-crystallites”, Applied Surface Science, vol. 223, no. 4, pp. 343 - 351, 2004.
J. Pettersson, Törndahl, T., Platzer-Björkman, C., Hultqvist, A., and Edoff, M., “The Influence of Absorber Thickness on Cu(In,Ga)Se2 Solar Cells With Different Buffer Layers”, IEEE journal of photovoltaics, vol. 3, pp. 1376–1382, 2013.
J. Zhao, A., W., Dai, X., Green, M. A., and Wenham, S. R., “Improvements in Silicon Solar Cell Performance”, 22nd IEEE PV Specialists Conference. pp. 399-402, 1991.
P. P. Altermatt, Sinton, R. A., and Heiser, G., “Improvements in numerical modelling of highly injected crystalline silicon solar cells”, Solar Energy Materials and Solar Cells, vol. 65, pp. 149-155(7), 2001.
A. B. Sproul and Green, M. A., “Improved value for the silicon intrinsic carrier concentration from 275 to 375 K”, Journal of Applied Physics, vol. 70, pp. 846-854, 1991.
A. B. Sproul and Green, M. A., “Improved value for the silicon intrinsic carrier concentration from 275 to 375 K”, Journal of Applied Physics, vol. 70, p. 846, 1991.
A. B. Sproul, Green, M. A., and Zhao, J., “Improved value for the silicon intrinsic carrier concentration at 300 K”, Applied Physics Letters, vol. 57, p. 255, 1990.
A. Richter, Glunz, S. W., Werner, F., Schmidt, J., and Cuevas, A., “Improved quantitative description of Auger recombination in crystalline silicon”, Physical Review B, vol. 86, no. 16, 2012.
D. S. Ruby, Yang, P., Zaidi, S., Brueck, S., Roy, M., and Narayanan, S., “Improved Performance of Self-Aligned, Selective-Emitter Silicon Solar Cells”, 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion. Vienna, Austria, 1998.
H
M. Wolf, “Historical Development of Solar Cells”. IEEE Press, 1976.
M. Powalla et al., “High-efficiency Cu(In,Ga)Se2 cells and modules”, Solar energy materials and solar cells, vol. 119, pp. 51–58, 2013.
P. Campbell and Green, M. A., “High performance light trapping textures for monocrystalline silicon solar cells”, Solar Energy Materials and Solar Cells, vol. 65, no. 1-4, pp. 369 - 375, 2001.
M. Aven, “High Electron Mobility in Zinc Selenide Through Low-Temperature Annealing”, Journal of Applied Physics, vol. 42, no. 3, p. 1204, 1971.
B. Dale and Rudenberg, H. G., “High efficiency silicon solar cells”, in Proceedings of the 14th Annual Power Sources Conference, 1960, p. 22.
T. Magorian Friedlmeier, Wieser, N., Walter, T., Dittrich, H., and Schock, H. W., “Heterojunctions based on Cu2ZnSnS4 and Cu2ZnSnSe4 thin films”, in 14th European PVSEC, 1997.

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