Biblio

Export 293 results:
Author Title [ Type(Asc)] Year
Journal Article
M. Parhizkar et al., “Nanocrystalline CuO films prepared by pyrolysis of Cu-arachidate LB multilayers”, Colloids and Surfaces A: Physicochemical and Engineering Aspects, vol. 257-258, pp. 277 - 282, 2005.
A. Rockett et al., “Na incorporation in Mo and CuInSe2 from production processes”, Solar energy materials and solar cells, vol. 59, pp. 255–264, 1999.
G. Masetti, Severi, M., and Solmi, S., “Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon”, IEEE Transactions on Electron Devices, vol. ED-30, pp. 764–9, 1983.
R. Perez, Ineichen, P., Seals, R., Michalsky, J., and Stewart, R., “Modeling daylight availability and irradiance components from direct and global irradiance”, Solar Energy, vol. 44, pp. 271–289, 1990.
R. Perez, Ineichen, P., Seals, R., Michalsky, J., and Stewart, R., “Modeling daylight availability and irradiance components from direct and global irradiance”, Solar Energy, vol. 44, pp. 271 - 289, 1990.
C. H. Wang, Misiakos, K., and Neugroschel, A., “Minority-carrier transport parameters in n-type silicon”, IEEE Transactions on Electron Devices, vol. 37, pp. 1314 - 1322, 1990.
M. A. Green, King, F. D., and Shewchun, J., “Minority carrier MIS tunnel diodes and their application to electron- and photo-voltaic energy conversion—I. Theory”, Solid-State Electronics, vol. 17, no. 6, pp. 551 - 561, 1974.
M. Devika et al., “Microstructure dependent physical properties of evaporated tin sulfide films”, Journal of Applied Physics, vol. 100, no. 2, p. 023518, 2006.
A. E. Becquerel, “Memoire sur les effects d´electriques produits sous l´influence des rayons solaires”, Annalen der Physick und Chemie, vol. 54, pp. 35-42, 1841.
M. Emilio, Kuhn, J. R., Bush, R. I., and Scholl, I. F., “MEASURING THE SOLAR RADIUS FROM SPACE DURING THE 2003 AND 2006 MERCURY TRANSITS”, The Astrophysical Journal, vol. 750, no. 2, p. 135, 2012.
E. G. Laue, “The measurement of solar spectral irradiance at different terrestrial elevations”, Solar Energy, vol. 13, pp. 43 - 50, IN1-IN4, 51-57, 1970.
F. M. Smits, “Measurement of sheet resistivities with the four-point probe”, Bell System Technical Journal, vol. 34, pp. 711-718, 1958.
T. Tiedje, Yablonovich, E., Cody, G. D., and Brooks, B. G., “Limiting Efficiency of Silicon Solar Cells”, IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. ED-31, 1984.
R. S. Ohl, “Light-Sensitive Electric Device”, U.S. Patent, vol. 2, p. 402, 602, 1941.
P. Campbell and Green, M. A., “Light trapping properties of pyramidally textured surfaces”, Journal of Applied Physics, vol. 62, no. 1, p. 243, 1987.
C. Rincón and Ramírez, F. J., “Lattice vibrations of CuInSe2 and CuGaSe2 by Raman microspectrometry”, Journal of Applied Physics, vol. 72, 1992.
F. O. R. B. E. S. ROBERTSON, “KNOOP HARDNESS NUMBERS FOR 127 OPAQUE MINERALS”, Geological Society of America Bulletin, vol. 72, no. 4, p. 621, 1961.
S. C. Baker-Finch, McIntosh, K. R., and Terry, M. L., “Isotextured Silicon Solar Cell Analysis and Modeling 1: Optics”, IEEE Journal of Photovoltaics, vol. 2, no. 4, pp. 457 - 464, 2012.
S. M. Whittingham and Thompson, A. H., “Intercalation and lattice expansion in titanium disulfide”, The Journal of Chemical Physics, vol. 62, no. 4, p. 1588, 1975.
E. Yablonovich and Cody, G. D., “Intensity Enhancement in Textured Optical Sheets for Solar Cells”, IEEE Transactions on Electron Devices, vol. ED-29, pp. 300-305, 1982.
R. B. Kale and Lokhande, C. D., “Influence of air annealing on the structural, optical and electrical properties of chemically deposited CdSe nano-crystallites”, Applied Surface Science, vol. 223, no. 4, pp. 343 - 351, 2004.
J. Pettersson, Törndahl, T., Platzer-Björkman, C., Hultqvist, A., and Edoff, M., “The Influence of Absorber Thickness on Cu(In,Ga)Se2 Solar Cells With Different Buffer Layers”, IEEE journal of photovoltaics, vol. 3, pp. 1376–1382, 2013.
P. P. Altermatt, Sinton, R. A., and Heiser, G., “Improvements in numerical modelling of highly injected crystalline silicon solar cells”, Solar Energy Materials and Solar Cells, vol. 65, pp. 149-155(7), 2001.
A. B. Sproul and Green, M. A., “Improved value for the silicon intrinsic carrier concentration from 275 to 375 K”, Journal of Applied Physics, vol. 70, p. 846, 1991.
A. B. Sproul and Green, M. A., “Improved value for the silicon intrinsic carrier concentration from 275 to 375 K”, Journal of Applied Physics, vol. 70, pp. 846-854, 1991.

Pages