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D. Rudmann, Bilger, G., Kaelin, M., Haug, F. - J., Zogg, H., and Tiwari, A. N., Effects of NaF coevaporation on structural properties of Cu (In, Ga) Se2 thin films, Thin Solid Films, vol. 431, pp. 37–40, 2003.
J. Czochralski, Ein neues Verfahren zur Messung der Kristallisationsgeschwindigheit der Metalle, Zeitschrift für physikalische Chemie, vol. 92, pp. 219–221, 1918.
G. Simmons and Birch, F., Elastic Constants of Pyrite, Journal of Applied Physics, vol. 34, no. 9, pp. 2736 - 2738, 1963.
K. Ito and Nakazawa, T., Electrical and Optical Properties of Stannite-Type Quaternary Semiconductor Thin Films, Japanese Journal of Applied Physics, vol. 27, no. Part 1, No. 11, pp. 2094 - 2097, 1988.
T. Irie, Endo, S., and Kimura, S., Electrical Properties of p- and n-Type CuInSe 2 Single Crystals, Japanese Journal of Applied Physics, vol. 18, no. 7, pp. 1303 - 1310, 1979.
K. N. Reddy and Reddy, K. T. Ramakrishn, Electrical properties of spray pyrolytic tin sulfide films, Solid-State Electronics, vol. 49, no. 6, pp. 902 - 906, 2005.
L. E. Conroy and Park, K. Chang, Electrical properties of the Group IV disulfides, titanium disulfide, zirconium disulfide, hafnium disulfide and tin disulfide, Inorganic Chemistry, vol. 7, no. 3, pp. 459 - 463, 1968.
G. Jones and Woods, J., The electrical properties of zinc selenide, Journal of Physics D: Applied Physics, vol. 9, no. 5, pp. 799 - 810, 1976.
H. H. Heikens, Van Bruggen, C. F., and Haas, C., Electrical properties of α-MnS, Journal of Physics and Chemistry of Solids, vol. 39, no. 8, pp. 833 - 840, 1978.
S. Lehner, Ciobanu, M., Savage, K., and Cliffel, D. E., Electrochemical Impedance Spectroscopy of Synthetic Pyrite Doped with As, Co, and Ni, Journal of The Electrochemical Society, vol. 155, no. 5, p. P61, 2008.
R. N. Hall, Electron-Hole Recombination in Germanium, Phys. Rev., vol. 87, p. 387, 1952.
J. Henrie, Kellis, S., Schultz, S., and Hawkins, A., Electronic color charts for dielectric films on silicon, Optics Express, vol. 12, pp. 1464–1469, 2004.
Y. - N. Xu and Ching, W., Electronic, optical, and structural properties of some wurtzite crystals, Physical Review B, vol. 48, no. 7, pp. 4335 - 4351, 1993.
H. C. Card and Yang, E. S., Electronic processes at grain boundaries in polycrystalline semiconductors under optical illumination, IEEE Transactions on Electron Devices, vol. ED-24, pp. 397-402, 1977.
B. Liu et al., Electronic structure of TiS2 and its electric transport properties under high pressure, Journal of Applied Physics, vol. 109, no. 5, p. 053717, 2011.
Y. Imai, Watanabe, A., and Mukaida, M., Electronic structures of semiconducting alkaline-earth metal silicides, Journal of Alloys and Compounds, vol. 358, no. 1-2, pp. 257 - 263, 2003.
W. Shockley, Electrons and holes in semiconductors with applications to transistor electronics. New York: van Nostrand, 1950.
F. Vazquez, Forman, R., and Cardona, M., Electroreflectance Measurements on Mg2Si, Mg2Ge, and Mg2Sn, Physical Review, vol. 176, no. 3, pp. 905 - 908, 1968.
A. Jain, Exact analytical solutions of the parameters of real solar cells using Lambert W-function, Solar Energy Materials and Solar Cells, vol. 81, no. 2, pp. 269 - 277, 2004.
T. Serin, Yildiz, A., Şahin, Ş., and Serin, N., Extraction of important electrical parameters of CuO, Physica B: Condensed Matter, vol. 406, no. 3, pp. 575 - 578, 2011.