Biblio

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Journal Article
T. Serin, Yildiz, A., Şahin, Ş., and Serin, N., Extraction of important electrical parameters of CuO, Physica B: Condensed Matter, vol. 406, no. 3, pp. 575 - 578, 2011.
H. KIDOWAKI, OKU, T., Akiyama, T., SUZUKI, A., JEYADEVAN, B., and Cuya, J., Fabrication and Characterization of CuO-based Solar Cells, Journal of Materials Science Research, vol. 1, no. 1, 2011.
J. R. G. Ross and Smokler, M. I., Flat-Plate Solar Array Project Final Report, pp. 86-31, 1986.
S. M. Hanasoge, Duvall, T. L., and Sreenivasan, K. R., From the Cover: Anomalously weak solar convection, Proceedings of the National Academy of Sciences, vol. 109, no. 30, pp. 11928 - 11932, 2012.
K. Bothe, Sinton, R., and Schmidt, J., Fundamental boron-oxygen-related carrier lifetime limit in mono- and multicrystalline silicon, Progress in Photovoltaics: Research and Applications, vol. 13, pp. 287 - 296, 2005.
K. Bothe, Sinton, R., and Schmidt, J., Fundamental boron-oxygen-related carrier lifetime limit in mono- and multicrystalline silicon, Progress in Photovoltaics: Research and Applications, vol. 13, pp. 287 - 296, 2005.
M. J. Kerr, Cuevas, A., and Sinton, R. A., Generalized analysis of quasi-steady-state and transient decay open circuit voltage measurements, Journal of Applied Physics, vol. 91, p. 399, 2002.
L. Al Juhaiman, Scoles, L., Kingston, D., Patarachao, B., Wang, D., and Bensebaa, F., Green synthesis of tunable Cu(In1−xGax)Se2 nanoparticles using non-organic solvents, Green Chemistry, vol. 12, no. 7, p. 1248, 2010.
A. Richter, Glunz, S. W., Werner, F., Schmidt, J., and Cuevas, A., Improved quantitative description of Auger recombination in crystalline silicon, Physical Review B, vol. 86, no. 16, 2012.
A. B. Sproul, Green, M. A., and Zhao, J., Improved value for the silicon intrinsic carrier concentration at 300 K, Applied Physics Letters, vol. 57, p. 255, 1990.
A. B. Sproul and Green, M. A., Improved value for the silicon intrinsic carrier concentration from 275 to 375 K, Journal of Applied Physics, vol. 70, p. 846, 1991.
A. B. Sproul and Green, M. A., Improved value for the silicon intrinsic carrier concentration from 275 to 375 K, Journal of Applied Physics, vol. 70, pp. 846-854, 1991.
P. P. Altermatt, Sinton, R. A., and Heiser, G., Improvements in numerical modelling of highly injected crystalline silicon solar cells, Solar Energy Materials and Solar Cells, vol. 65, pp. 149-155(7), 2001.
F. M. Smits, Measurement of sheet resistivities with the four-point probe, Bell System Technical Journal, vol. 34, pp. 711-718, 1958.
M. Emilio, Kuhn, J. R., Bush, R. I., and Scholl, I. F., MEASURING THE SOLAR RADIUS FROM SPACE DURING THE 2003 AND 2006 MERCURY TRANSITS, The Astrophysical Journal, vol. 750, no. 2, p. 135, 2012.
M. A. Green, King, F. D., and Shewchun, J., Minority carrier MIS tunnel diodes and their application to electron- and photo-voltaic energy conversion—I. Theory, Solid-State Electronics, vol. 17, no. 6, pp. 551 - 561, 1974.
R. Perez, Ineichen, P., Seals, R., Michalsky, J., and Stewart, R., Modeling daylight availability and irradiance components from direct and global irradiance, Solar Energy, vol. 44, pp. 271–289, 1990.
R. Perez, Ineichen, P., Seals, R., Michalsky, J., and Stewart, R., Modeling daylight availability and irradiance components from direct and global irradiance, Solar Energy, vol. 44, pp. 271–289, 1990.
R. Perez, Ineichen, P., Seals, R., Michalsky, J., and Stewart, R., Modeling daylight availability and irradiance components from direct and global irradiance, Solar Energy, vol. 44, pp. 271 - 289, 1990.
R. Perez, Ineichen, P., Seals, R., Michalsky, J., and Stewart, R., Modeling daylight availability and irradiance components from direct and global irradiance, Solar Energy, vol. 44, pp. 271 - 289, 1990.
G. Masetti, Severi, M., and Solmi, S., Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon, IEEE Transactions on Electron Devices, vol. ED-30, pp. 764–9, 1983.
G. Masetti, Severi, M., and Solmi, S., Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon, IEEE Transactions on Electron Devices, vol. ED-30, pp. 764–9, 1983.
M. Parhizkar et al., Nanocrystalline CuO films prepared by pyrolysis of Cu-arachidate LB multilayers, Colloids and Surfaces A: Physicochemical and Engineering Aspects, vol. 257-258, pp. 277 - 282, 2005.
M. Parhizkar et al., Nanocrystalline CuO films prepared by pyrolysis of Cu-arachidate LB multilayers, Colloids and Surfaces A: Physicochemical and Engineering Aspects, vol. 257-258, pp. 277 - 282, 2005.
S. Prabahar, Balasubramanian, V., Suryanarayanan, N., and Muthukumarasamy, N., Optical properties of copper indium diselenide thin films, Chalcogenide Letters, vol. 7, pp. 49–58, 2010.

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