Biblio

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A. B. Sproul, Green, M. A., and Zhao, J., “Improved value for the silicon intrinsic carrier concentration at 300 K”, Applied Physics Letters, vol. 57, p. 255, 1990.
A. B. Sproul and Green, M. A., “Improved value for the silicon intrinsic carrier concentration from 275 to 375 K”, Journal of Applied Physics, vol. 70, p. 846, 1991.
A. B. Sproul, “Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors”, Journal of Applied Physics, vol. 76, pp. 2851-2854, 1994.
F. M. Smits, “Measurement of sheet resistivities with the four-point probe”, Bell System Technical Journal, vol. 34, pp. 711-718, 1958.
C. Smith and Barron, A., “Synthesis and Purification of Bulk Semiconductors”, 2012. [Online]. Available: http://cnx.org/content/m23936/1.7/.
R. A. Sinton and Cuevas, A., “Contactless determination of current–voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data”, Applied Physics Letters, vol. 69, pp. 2510-2512, 1996.
R. A. Sinton and Cuevas, A., “A Quasi-Steady-State Open-Circuit Voltage Method for Solar Cell Characterization”, in 16th European Photovoltaic Solar Energy Conference, Glasgow, Scotland, 2000, pp. 1152–1155.
R. A. Sinton and Swanson, R. M., “Recombination in highly injected silicon”, Electron Devices, IEEE Transactions on, vol. 34, pp. 1380 - 1389, 1987.
G. Simmons and Birch, F., “Elastic Constants of Pyrite”, Journal of Applied Physics, vol. 34, no. 9, pp. 2736 - 2738, 1963.
W. Shockley, Electrons and holes in semiconductors with applications to transistor electronics. New York: van Nostrand, 1950.
W. Shockley and Read, W. T., “Statistics of the Recombinations of Holes and Electrons”, Physical Review, vol. 87, p. 835, 1952.
W. Shockley, “The theory of p-n Junctions in semiconductors and p-n junction transistors”, Bell System Technical Journal, vol. 28, no. 3, pp. 435 - 489, 1949.
W. Shockley and Queisser, H. J., “Detailed Balance Limit of Efficiency of p-n Junction Solar Cells”, Journal of Applied Physics, vol. 32, pp. 510-519, 1961.
J. N. Shive, “Semiconductor Devices, Chapter 8”, New Jersey: Van Nostrand, 1959.
W. Shafarman, Sieventritt, S., and Stolt, L., “Cu(InGa)Se2 Solar Cells”, in Handbook of photovoltaic science and engineering, 2nd ed., A. Luque and Hegedus, S., Eds. John Wiley & Sons, 2011, pp. 546-599.
H. B. Serreze, “Optimizing Solar Cell Performance by Simultaneous Consideration of Grid Pattern Design and Interconnect Configurations”, 13th IEEE Photovoltaic Specialists Conference. Washington, D.C., USA, pp. 1-8, 1978.
N. Serin, Serin, T., Horzum, Ş., and Çelik, Y., “Annealing effects on the properties of copper oxide thin films prepared by chemical deposition”, Semiconductor Science and Technology, vol. 20, p. 398, 2005.
N. Serin, Serin, ülay, Horzum, Ş., and Çelik, Y., “Annealing effects on the properties of copper oxide thin films prepared by chemical deposition”, Semiconductor Science and Technology, vol. 20, no. 5, pp. 398 - 401, 2005.
T. Serin, Yildiz, A., Şahin, Ş., and Serin, N., “Extraction of important electrical parameters of CuO”, Physica B: Condensed Matter, vol. 406, no. 3, pp. 575 - 578, 2011.
SERI, Photovoltaics for Residential Applications. Golden, Colorado: Solar Energy Research Institute, 1984.
R. Sekuler and Blake, R., Perception. New York: Alfred A. Knopf Inc, 1985.
D. Schroder, Semiconductor material and device characterization, 3rd editionrd ed. Piscataway NJ; Hoboken N.J.: IEEE Press; Wiley, 2006.
J. Schmidt, Kerr, M. J., and Altermatt, P. P., “Coulomb-enhanced Auger recombination in crystalline silicon at intermediate and high injection densities”, Journal of Applied Physics, vol. 88, pp. 1494-1497, 2000.
N. Sato, Ichimura, M., Arai, E., and Yamazaki, Y., “Characterization of electrical properties and photosensitivity of SnS thin films prepared by the electrochemical deposition method”, Solar Energy Materials and Solar Cells, vol. 85, no. 2, pp. 153 - 165, 2005.
R
A. Rumberg, Sommerhalter, C., Toplak, M., Jäger-Waldau, A., and Lux-Steiner, M. C., “ZnSe thin films grown by chemical vapour deposition for application as buffer layer in CIGSS solar cells”, Thin Solid Films, vol. 361-362, pp. 172 - 176, 2000.

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