Biblio

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Journal Article
S. W. Glunz, Rein, S., Warta, W., Knobloch, J., and Wettling, W., “Degradation of carrier lifetime in Cz silicon solar cells”, Solar Energy Materials and Solar Cells, vol. 65, pp. 219 - 229, 2001.
S. J. Robinson, Aberle, A. G., and Green, M. A., “Departures from the principle of superposition in silicon solar cells”, Journal of Applied Physics, vol. 76, p. 7920, 1994.
W. Wang et al., “Device characteristics of CZTSSe thin-film solar cells with 12.6% efficiency”, Advanced Energy Materials, vol. 4, 2014.
W. Wang et al., “Device characteristics of CZTSSe thin-film solar cells with 12.6% efficiency”, Advanced Energy Materials, vol. 4, 2014.
J. - W. Park, Baeg, K. - J., Ghim, J., Kang, S. - J., Park, J. - H., and Kim, D. - Y., “Effects of Copper Oxide/Gold Electrode as the Source-Drain Electrodes in Organic Thin-Film Transistors”, Electrochemical and Solid-State Letters, vol. 10, no. 11, p. H340, 2007.
B. Liu et al., “Electronic structure of TiS2 and its electric transport properties under high pressure”, Journal of Applied Physics, vol. 109, no. 5, p. 053717, 2011.
R. Caracas and Gonze, X., “First-principles study of the electronic properties of A2B3 minerals, with A=Bi,Sb and B=S,Se”, Physics and Chemistry of Minerals, vol. 32, no. 4, pp. 295 - 300, 2005.
E. M. Logothetis, Kaiser, W. J., Kukkonen, C. A., Faile, S. P., Colella, R., and Gambold, J., “Hall coefficient and reflectivity evidence that TiS 2 is a semiconductor”, Journal of Physics C: Solid State Physics, vol. 12, p. L521, 1979.
E. M. Logothetis, Kaiser, W. J., Kukkonen, C. A., Faile, S. P., Colella, R., and Gambold, J., “Hall coefficient and reflectivity evidence that TiS 2 is a semiconductor”, Journal of Physics C: Solid State Physics, vol. 12, no. 13, pp. L521 - L526, 1979.
P. Campbell and Green, M. A., “High performance light trapping textures for monocrystalline silicon solar cells”, Solar Energy Materials and Solar Cells, vol. 65, no. 1-4, pp. 369 - 375, 2001.
A. Richter, Glunz, S. W., Werner, F., Schmidt, J., and Cuevas, A., “Improved quantitative description of Auger recombination in crystalline silicon”, Physical Review B, vol. 86, no. 16, 2012.
A. B. Sproul, Green, M. A., and Zhao, J., “Improved value for the silicon intrinsic carrier concentration at 300 K”, Applied Physics Letters, vol. 57, p. 255, 1990.
A. B. Sproul and Green, M. A., “Improved value for the silicon intrinsic carrier concentration from 275 to 375 K”, Journal of Applied Physics, vol. 70, pp. 846-854, 1991.
A. B. Sproul and Green, M. A., “Improved value for the silicon intrinsic carrier concentration from 275 to 375 K”, Journal of Applied Physics, vol. 70, p. 846, 1991.
P. Campbell and Green, M. A., “Light trapping properties of pyramidally textured surfaces”, Journal of Applied Physics, vol. 62, no. 1, p. 243, 1987.
M. Devika et al., “Microstructure dependent physical properties of evaporated tin sulfide films”, Journal of Applied Physics, vol. 100, no. 2, p. 023518, 2006.
M. Devika et al., “Microstructure dependent physical properties of evaporated tin sulfide films”, Journal of Applied Physics, vol. 100, no. 2, p. 023518, 2006.
M. Devika et al., “Microstructure dependent physical properties of evaporated tin sulfide films”, Journal of Applied Physics, vol. 100, no. 2, p. 023518, 2006.
M. A. Green, King, F. D., and Shewchun, J., “Minority carrier MIS tunnel diodes and their application to electron- and photo-voltaic energy conversion—I. Theory”, Solid-State Electronics, vol. 17, no. 6, pp. 551 - 561, 1974.
A. Rockett et al., “Na incorporation in Mo and CuInSe2 from production processes”, Solar energy materials and solar cells, vol. 59, pp. 255–264, 1999.
A. Rockett et al., “Na incorporation in Mo and CuInSe2 from production processes”, Solar energy materials and solar cells, vol. 59, pp. 255–264, 1999.
M. Parhizkar et al., “Nanocrystalline CuO films prepared by pyrolysis of Cu-arachidate LB multilayers”, Colloids and Surfaces A: Physicochemical and Engineering Aspects, vol. 257-258, pp. 277 - 282, 2005.
C. Gümüş, Ulutaş, C., and Ufuktepe, Y., “Optical and structural properties of manganese sulfide thin films”, Optical Materials, vol. 29, no. 9, pp. 1183 - 1187, 2007.
M. A. Green and Keevers, M. J., “Optical properties of intrinsic silicon at 300 K”, Progress in Photovoltaics: Research and Applications, vol. 3, pp. 189 - 192, 1995.
K. Sun et al., “Over 9% Efficient Kesterite Cu 2 ZnSnS 4 Solar Cell Fabricated by Using Zn 1- x Cd x S Buffer Layer”, Advanced Energy Materials, vol. 6, no. 12, p. 1600046, 2016.

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