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A. Richter, Glunz, S. W., Werner, F., Schmidt, J., and Cuevas, A., Improved quantitative description of Auger recombination in crystalline silicon, Physical Review B, vol. 86, no. 16, 2012.
A. B. Sproul, Green, M. A., and Zhao, J., Improved value for the silicon intrinsic carrier concentration at 300 K, Applied Physics Letters, vol. 57, p. 255, 1990.
A. B. Sproul and Green, M. A., Improved value for the silicon intrinsic carrier concentration from 275 to 375 K, Journal of Applied Physics, vol. 70, pp. 846-854, 1991.
A. B. Sproul and Green, M. A., Improved value for the silicon intrinsic carrier concentration from 275 to 375 K, Journal of Applied Physics, vol. 70, p. 846, 1991.
P. P. Altermatt, Sinton, R. A., and Heiser, G., Improvements in numerical modelling of highly injected crystalline silicon solar cells, Solar Energy Materials and Solar Cells, vol. 65, pp. 149-155(7), 2001.
R. Einhaus, Vazsonyi, E., Szlufcik, J., Nijs, J., and Mertens, R., Isotropic texturing of multicrystalline silicon wafers with acidic texturing solutions, Twenty Sixth IEEE Photovoltaic Specialists Conference. New York, NY, USA, pp. 167-170, 1451, 1997.

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