Biblio

Export 290 results:
[ Author(Asc)] Title Type Year
A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 
W
E. Y. Wang, Yu, F. T. S., Sims, V. L., Brandhorst, E. W., and Broder, J. D., “Optimum Design of Anti-reflection coating for silicon solar cells”, 10th IEEE Photovoltaic Specialists Conference. pp. 168-171, 1973.
W. Wang et al., “Device characteristics of CZTSSe thin-film solar cells with 12.6% efficiency”, Advanced Energy Materials, vol. 4, 2014.
F. V. Wald, Bullitt, J., and Bell, R. O., “Bi2S3 as a high Z material for γ-ray detectors”, IEEE Transactions on Nuclear Science, vol. 22, no. 1, pp. 246 - 250, 1975.
S. Wagner, Shay, J. L., Migliorato, P., and Kasper, H. M., “CuInSe2/CdS heterojunction photovoltaic detectors”, Applied Physics Letters, vol. 25, pp. 434–435, 1974.
C. Wadia, Wu, Y., Gul, S., Volkman, S. K., Guo, J., and A. Alivisatos, P., “Surfactant-Assisted Hydrothermal Synthesis of Single phase Pyrite FeS 2 Nanocrystals”, Chemistry of Materials, vol. 21, no. 13, pp. 2568 - 2570, 2009.
V
P. J. Verlinden, Swanson, R. M., and Crane, R. A., “7000 High Efficiency Cells for a Dream”, Progress in Photovoltaics: Research and Applications, vol. 2, pp. 143 - 152, 1994.
F. Vazquez, Forman, R., and Cardona, M., “Electroreflectance Measurements on Mg2Si, Mg2Ge, and Mg2Sn”, Physical Review, vol. 176, no. 3, pp. 905 - 908, 1968.
L. L. Vant-Hull and Hildebrandt, A. F., “Solar thermal power system based on optical transmission”, Solar Energy, vol. 18, pp. 31 - 39, 1976.
U
I. Astronomic Union, “Measuring the Universe”, 2012. .
T
J. C. C. Tsai, “Shallow phosphorus diffusion profiles in silicon”, Proceedings of the IEEE, vol. 57, no. 9, pp. 1499 - 1506, 1969.
T. Tiedje, Yablonovich, E., Cody, G. D., and Brooks, B. G., “Limiting Efficiency of Silicon Solar Cells”, IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. ED-31, 1984.
W. R. Thurber, Mattis, R. L., Liu, Y. M., and Filliben, J. J., “Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon”, Journal of The Electrochemical Society, vol. 127, pp. 1807-1812, 1980.
W. R. Thurber, Mattis, R. L., Liu, Y. M., and Filliben, J. J., “Resistivity-Dopant Density Relationship for Boron-Doped Silicon”, Journal of The Electrochemical Society, vol. 127, pp. 2291-2294, 1980.
W. R. Thurber, Mattis,, Liu,, and Filliben, “The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon”. U.S. Department of Commerce National Bureau of Standards, 1981.
B. Thomas, Ellmer, K., Bohne, W., Röhrich, J., Kunst, M., and Tributsch, H., “Photoeffects in cobalt doped pyrite (FeS 2 ) films”, Solid State Communications, vol. 111, no. 5, pp. 235 - 240, 1999.
J. -ichi Tani and Kido, H., “Thermoelectric properties of Bi-doped Mg2Si semiconductors”, Physica B: Condensed Matter, vol. 364, no. 1-4, pp. 218 - 224, 2005.
E. P. S. Tan et al., “Crystallinity and surface effects on Young’s modulus of CuO nanowires”, Applied Physics Letters, vol. 90, no. 16, p. 163112, 2007.
T. Takamoto et al., “World’s Highest Efficiency Triple-junction Solar Cells Fabricated by Inverted Layers Transfer Process”, 35 IEEE Photovoltaic Specialist Conference. Honolulu HI, USA, 2010.
S
J. Szlufcik, Sivoththaman, S., Nlis, J. F., Mertens, R. P., and Van-Overstraeten, R., “Low-cost industrial technologies of crystalline silicon solar cells”, Proceedings-of-the-IEEE, vol. 85. pp. 711-730, 1997.
R. M. Swanson, “Approaching the 29% limit efficiency of silicon solar cells”, Thirty-First IEEE Photovoltaic Specialists Conference. 01/2005, Lake buena Vista, FL, USA, pp. 889-94, 2005.
K. Sun et al., “Over 9% Efficient Kesterite Cu 2 ZnSnS 4 Solar Cell Fabricated by Using Zn 1- x Cd x S Buffer Layer”, Advanced Energy Materials, vol. 6, no. 12, p. 1600046, 2016.
B. G. Streetman, Solid State Electronic Devices. Prentice Hall, 2000.
M. J. Stocks, Carr, A. J., and Blakers, A. W., “Texturing of polycrystalline silicon”, Solar Energy Materials and Solar Cells, vol. 40, pp. 33 - 42, 1996.
C. Steinhagen, Panthani, M. G., Akhavan, V., Goodfellow, B., Koo, B., and Korgel, B. A., “Synthesis of Cu2ZnSnS4 nanocrystals for use in low-cost photovoltaics”, Journal of the American Chemical Society, vol. 131, pp. 12554–12555, 2009.
A. B. Sproul and Green, M. A., “Improved value for the silicon intrinsic carrier concentration from 275 to 375 K”, Journal of Applied Physics, vol. 70, p. 846, 1991.

Pages