Biblio

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Conference Paper
W. Guang-Pu et al., “Investigation on SnS film by RF sputtering for photovoltaic application”, in 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC), Waikoloa, HI, USA, 1994.
Conference Proceedings
D. S. Ruby, Yang, P., Zaidi, S., Brueck, S., Roy, M., and Narayanan, S., “Improved Performance of Self-Aligned, Selective-Emitter Silicon Solar Cells”, 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion. Vienna, Austria, 1998.
J. Zhao, A., W., Dai, X., Green, M. A., and Wenham, S. R., “Improvements in Silicon Solar Cell Performance”, 22nd IEEE PV Specialists Conference. pp. 399-402, 1991.
K. R. McIntosh and Honsberg, C. B., “The Influence of Edge Recombination on a Solar Cell’s IV Curve”, 16th European Photovoltaic Solar Energy Conference. 2000.
R. Einhaus, Vazsonyi, E., Szlufcik, J., Nijs, J., and Mertens, R., “Isotropic texturing of multicrystalline silicon wafers with acidic texturing solutions”, Twenty Sixth IEEE Photovoltaic Specialists Conference. New York, NY, USA, pp. 167-170, 1451, 1997.
Journal Article
A. Richter, Glunz, S. W., Werner, F., Schmidt, J., and Cuevas, A., “Improved quantitative description of Auger recombination in crystalline silicon”, Physical Review B, vol. 86, no. 16, 2012.
A. B. Sproul, Green, M. A., and Zhao, J., “Improved value for the silicon intrinsic carrier concentration at 300 K”, Applied Physics Letters, vol. 57, p. 255, 1990.
A. B. Sproul and Green, M. A., “Improved value for the silicon intrinsic carrier concentration from 275 to 375 K”, Journal of Applied Physics, vol. 70, pp. 846-854, 1991.
A. B. Sproul and Green, M. A., “Improved value for the silicon intrinsic carrier concentration from 275 to 375 K”, Journal of Applied Physics, vol. 70, p. 846, 1991.
P. P. Altermatt, Sinton, R. A., and Heiser, G., “Improvements in numerical modelling of highly injected crystalline silicon solar cells”, Solar Energy Materials and Solar Cells, vol. 65, pp. 149-155(7), 2001.
J. Pettersson, Törndahl, T., Platzer-Björkman, C., Hultqvist, A., and Edoff, M., “The Influence of Absorber Thickness on Cu(In,Ga)Se2 Solar Cells With Different Buffer Layers”, IEEE journal of photovoltaics, vol. 3, pp. 1376–1382, 2013.
R. B. Kale and Lokhande, C. D., “Influence of air annealing on the structural, optical and electrical properties of chemically deposited CdSe nano-crystallites”, Applied Surface Science, vol. 223, no. 4, pp. 343 - 351, 2004.
E. Yablonovich and Cody, G. D., “Intensity Enhancement in Textured Optical Sheets for Solar Cells”, IEEE Transactions on Electron Devices, vol. ED-29, pp. 300-305, 1982.
S. M. Whittingham and Thompson, A. H., “Intercalation and lattice expansion in titanium disulfide”, The Journal of Chemical Physics, vol. 62, no. 4, p. 1588, 1975.
S. C. Baker-Finch, McIntosh, K. R., and Terry, M. L., “Isotextured Silicon Solar Cell Analysis and Modeling 1: Optics”, IEEE Journal of Photovoltaics, vol. 2, no. 4, pp. 457 - 464, 2012.