Biblio

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I
A. Richter, Glunz, S. W., Werner, F., Schmidt, J., and Cuevas, A., “Improved quantitative description of Auger recombination in crystalline silicon”, Physical Review B, vol. 86, no. 16, 2012.
F
K. Bothe, Sinton, R., and Schmidt, J., “Fundamental boron-oxygen-related carrier lifetime limit in mono- and multicrystalline silicon”, Progress in Photovoltaics: Research and Applications, vol. 13, pp. 287 - 296, 2005.
C
J. Schmidt, Kerr, M. J., and Altermatt, P. P., “Coulomb-enhanced Auger recombination in crystalline silicon at intermediate and high injection densities”, Journal of Applied Physics, vol. 88, pp. 1494-1497, 2000.