Using exact numerical solutions of carrier transport in the back-surface-field silicon solar cell both for guidance and for verification, the physical mechanisms effective in this device are identified and explained. Concise analytical descriptions of the cell performance, based on the pertinent device physics, are formulated.
%B IEEE Transactions on Electron Devices %V 24 %P 322 - 325 %8 04/1977 %G eng %0 Journal Article %J Acta Chemica Scandinavica %D 1965 %T On the Properties of alpha-MnS and MnS2. %A Furuseth, Sigrid %A Kjekshus, Arne %A Niklasson, Rune J. V. %A Brunvoll, J. %A Hinton, Merv %B Acta Chemica Scandinavica %V 19 %P 1405 - 1410 %8 Jan-01-1965 %G eng %U http://actachemscand.org/doi/10.3891/acta.chem.scand.19-1405 %! Acta Chem. Scand. %R 10.3891/acta.chem.scand.19-1405 %0 Journal Article %J Phys. Rev. %D 1958 %T Photoconductivity of Zinc Selenide Crystals and a Correlation of Donor and Acceptor Levels in II-VI Photoconductors %A Bube, Richard H. %A Lind, Edward L. %X Photosensitive crystals of zinc selenide have been prepared by incorporating suitable proportions of Group VII donors (e.g., bromine) and either Group I acceptors (copper or silver) or Group V acceptors (antimony or arsenic) in crystals prepared from the vapor phase. Photoconductivity phenomena characteristic of other II-VI photoconductors, such as (a) variation of photocurrent with a power of light intensity greater than unity, (b) temperature quenching of photoconductivity, and (c) infrared quenching of photoconductivity, are also found for zinc selenide. Sensitizing centers in ZnSe: Br: Cu and ZnSe: Br: Ag have levels lying at the same distance above the top of the valence band (0.6 ev) as sensitizing centers in CdSe, even though the band gap of ZnSe is 50% larger than that of CdSe. Crystals with Group V acceptors are characterized in addition by a long-wavelength spectral response, out to 1.4 microns, associated with levels lying about 1.3 ev above the top of the valence band. By a consideration of known data on the conductivity, photoconductivity, and luminescence of II-VI compounds, a consistent correlation of donor and acceptor levels in these materials is possible. %B Phys. Rev. %V 110 %P 1040–1049 %8 Jun %G eng %U http://link.aps.org/doi/10.1103/PhysRev.110.1040 %R 10.1103/PhysRev.110.1040 %0 Journal Article %J Bell Systems Technical Journal %D 1952 %T Photoelectric Properties of Tonically Bombarded Silicon %A Kingsbury, E.F. %A Ohl, R.S. %B Bell Systems Technical Journal %V 31 %P 802-815 %G eng