%0 Journal Article %J Journal of Physics: Condensed Matter %D 2004 %T Pressure-induced structural phase transition in the IV–VI semiconductor SnS %A Ehm, L %A Knorr, K %A Dera, P %A Krimmel, A %A Bouvier, P %A Mezouar, M %X The structural behaviour of SnS under high-pressure has been investigated by angular dispersive synchrotron powder diffraction up to 38.5 GPa. A structural phase transition from orthorhombic α-SnS to monoclinic γ-SnS was observed at 18.15 GPa. The fit of a Birch–Murnaghan equation-of-state gave the volume at zero pressure of V0 = 192.6(3) Å3, the bulk modulus at zero pressure of B0 = 36.6(9) GPa and the pressure derivative of the bulk modulus B'=5.5(2) for α-SnS and V0 = 160(1) Å, B0 = 86.0(5) GPa and B'=4 for γ-SnS. The improper ferro-elastic transition is of first-order and is accompanied by a large volume discontinuity of about 9.1%. The phase transition can be described in terms of a group/subgroup relationship. The doubling of the unit cell indicates a wavevector (1/2,0,1/2) at the U-point in the Brillouin zone. %B Journal of Physics: Condensed Matter %V 16 %P 3545 - 3554 %8 Feb-06-2004 %G eng %U http://stacks.iop.org/0953-8984/16/i=21/a=004?key=crossref.fbc017dcad3d417136827c57d4ea2141 %N 21 %! J. Phys.: Condens. Matter %R 10.1088/0953-8984/16/21/004