%0 Journal Article %J Progress in Photovoltaics: Research and Applications %D 2017 %T Progress in thin film CIGS photovoltaics–Research and development, manufacturing, and applications %A Feurer, Thomas %A Reinhard, Patrick %A Avancini, Enrico %A Bissig, Benjamin %A Löckinger, Johannes %A Fuchs, Peter %A Carron, Romain %A Weiss, Thomas Paul %A Perrenoud, Julian %A Stutterheim, Stephan %A Buecheler, Stephan %A Tiwari, Ayodhya N. %B Progress in Photovoltaics: Research and Applications %V 25 %P 645–667 %G eng %0 Journal Article %D 2010 %T Solar Cell Device Physics %A Stephen J. Fonash %7 Second Edition %I Academic Press %P 400 %@ 978-0-12-374774-7 %G eng %U http://www.amazon.com/Solar-Cell-Device-Physics-Second/dp/0123747740/ref=sr_1_1?s=books&ie=UTF8&qid=1279652144&sr=1-1 %0 Journal Article %J Applied Physics Letters %D 2005 %T Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence %A Takashi Fuyuki %A Hayato Kondo %A Tsutomu Yamazaki %A Yu Takahashi %A Yukiharu Uraoka %K carrier lifetime %K electroluminescence %K elemental semiconductors %K MINORITY CARRIERS %K SILICON %K solar cells %B Applied Physics Letters %I AIP %V 86 %P 262108 %G eng %U http://link.aip.org/link/?APL/86/262108/1 %R 10.1063/1.1978979 %0 Journal Article %J Applied Physics Letters %D 1998 %T 19.8% efficient "honeycomb" textured multicrystalline and 24.4% monocrystalline silicon solar cells %A Jianhua Zhao %A Aihua Wang %A Martin A Green %A Francesca Ferrazza %K elemental semiconductors %K SILICON %K solar cells %K surface texture %B Applied Physics Letters %I AIP %V 73 %P 1991-1993 %G eng %U http://link.aip.org/link/?APL/73/1991/1 %R 10.1063/1.122345 %0 Conference Paper %B 14th European PVSEC %D 1997 %T Heterojunctions based on Cu2ZnSnS4 and Cu2ZnSnSe4 thin films %A Friedlmeier, Th Magorian %A Wieser, N %A Walter, Th %A Dittrich, H %A Schock, HW %B 14th European PVSEC %G eng %0 Conference Proceedings %B Twenty Sixth IEEE Photovoltaic Specialists Conference %D 1997 %T Surface texturing using reactive ion etching for multicrystalline silicon solar cells %A Fukui, K. %A Inomata, Y. %A Shirasawa, K. %B Twenty Sixth IEEE Photovoltaic Specialists Conference %C New York, NY, USA %P 1451, 47-50 %G eng %0 Journal Article %J Journal of Physics: Condensed Matter %D 1994 %T Temperature dependence of the optical absorption edge of pyrite FeS 2 thin films %A Heras, C de las %A Ferrer, I J %A Sanchez, C %B Journal of Physics: Condensed Matter %V 6 %P 10177 - 10183 %8 Feb-11-1995 %G eng %U http://stacks.iop.org/0953-8984/6/i=46/a=033?key=crossref.61b976ff921e0c9e9564b77a55dabd35 %N 46 %! J. Phys.: Condens. Matter %R 10.1088/0953-8984/6/46/033 %0 Book %B Princeton University Press, Princeton NJ %D 1985 %T QED : The Strange Theory of Light and Matter %A Feynman, R. P. %B Princeton University Press, Princeton NJ %G eng %0 Journal Article %J On Phosphorus Diffusion in Silicon %D 1983 %T On Phosphorus Diffusion in Silicon %A S.M. Hu %A P. Fahey %A P. Sutton %B On Phosphorus Diffusion in Silicon %V 54 %P 6912-6922 %G eng %0 Generic %D 1981 %T The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon %A W R Thurber %A Mattis %A Liu %A Filliben %I U.S. Department of Commerce National Bureau of Standards %G eng %0 Journal Article %J Journal of The Electrochemical Society %D 1980 %T Resistivity-Dopant Density Relationship for Boron-Doped Silicon %A W R Thurber %A R. L. Mattis %A Y. M. Liu %A J. J. Filliben %K boron %K electrical resistivity %K Hall effect %K hole density %K semiconductor doping %K SILICON %B Journal of The Electrochemical Society %I ECS %V 127 %P 2291-2294 %G eng %U http://link.aip.org/link/?JES/127/2291/1 %R 10.1149/1.2129394 %0 Journal Article %J Journal of The Electrochemical Society %D 1980 %T Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon %A W R Thurber %A R. L. Mattis %A Y. M. Liu %A J. J. Filliben %K density %K electrical resistivity %K electron mobility %K Hall effect %K neutron activation analysis %K phosphorus %K photometry %K semiconductor doping %K SILICON %B Journal of The Electrochemical Society %I ECS %V 127 %P 1807-1812 %G eng %U http://link.aip.org/link/?JES/127/1807/1 %R 10.1149/1.2130006 %0 Journal Article %J IEEE Transactions on Electron Devices %D 1979 %T Application of the superposition principle to solar-cell analysis %A F.A. Lindholm %A Fossum, J.G. %A E.L. Burgess %X The principle of superposition is used to derive from fundamentals the widely used shifting approximation that the current-voltage characteristic of an illuminated solar cell is the dark current-voltage characteristic shifted by the short-circuit photocurrent. Thus the derivation requires the linearity of the boundary-value problems that underlie the electrical characteristics. This focus on linearity defines the conditions that must hold if the shifting approximation is to apply with good accuracy. In this regard, if considerable photocurrent and considerable dark thermal recombination current both occur within the junction space-charge region, then the shifting approximation is invalid. From a rigorous standpoint, it is invalid also if low-injection concentrations of holes and electrons are not maintained throughout the quasi-neutral regions. The presence of sizable series resistance also invalidates the shifting approximation. Methods of analysis are presented to treat these cases for which shifting is not strictly valid. These methods are based on an understanding of the physics of cell operation. This understanding is supported by laboratory experiments and by exact computer solution of the relevant boundary-value problems. For the case of high injection in the base region, the method of analysis employed accurately yields the dependence of the open-circuit voltage on the short-circuit current (or the illumination level). %B IEEE Transactions on Electron Devices %V 26 %P 165–171 %G eng %0 Journal Article %J Journal of Physics C: Solid State Physics %D 1979 %T Hall coefficient and reflectivity evidence that TiS 2 is a semiconductor %A E M Logothetis %A W J Kaiser %A C A Kukkonen %A S P Faile %A R Colella %A J Gambold %X A series of measurements of the Hall coefficient, infrared reflectivity, thermoelectric power and electrical resistivity of Ti 1+x S 2 single crystals with various degrees of stoichiometry is described, where, for the first time, each measurement was made on the same crystal (or crystals from the same batch). None of these measurements taken alone can distinguish between the semimetallic or semiconducting models of TiS 2 . However, by making all four measurements on each sample, it has been possible to establish correlations between the results for different samples. It was found that the product of the Hall coefficient and the square of the plasma frequency is the same for all samples, a result that is consistent with a semiconductor model, but is inconsistent with a semimetal. Nevertheless the most stoichiometric samples remain metallic with electron concentrations of 2*10 20 cm -3 . It was also found that the resistivity data cannot be explained by carrier-carrier or optical phonon scattering. Therefore, both the source of the residual conduction electrons and the scattering mechanism in TiS 2 remain unknown. %B Journal of Physics C: Solid State Physics %V 12 %P L521 %G eng %U http://stacks.iop.org/0022-3719/12/i=13/a=007 %0 Journal Article %J Journal of Physics C: Solid State Physics %D 1979 %T Hall coefficient and reflectivity evidence that TiS 2 is a semiconductor %A Logothetis, E M %A W J Kaiser %A Kukkonen, C A %A S P Faile %A Colella, R %A J Gambold %B Journal of Physics C: Solid State Physics %V 12 %P L521 - L526 %8 Feb-07-1980 %G eng %U http://stacks.iop.org/0022-3719/12/i=13/a=007?key=crossref.7b34e84721f0d96f60dce7c3e44ba4c7 %N 13 %! J. Phys. C: Solid State Phys. %R 10.1088/0022-3719/12/13/007 %0 Journal Article %J IEEE Transactions on Electron Devices %D 1977 %T Physical operation of back-surface-field silicon solar cells %A Fossum, J.G. %X

Using exact numerical solutions of carrier transport in the back-surface-field silicon solar cell both for guidance and for verification, the physical mechanisms effective in this device are identified and explained. Concise analytical descriptions of the cell performance, based on the pertinent device physics, are formulated.

%B IEEE Transactions on Electron Devices %V 24 %P 322 - 325 %8 04/1977 %G eng %0 Journal Article %J Physical Review %D 1968 %T Electroreflectance Measurements on Mg2Si, Mg2Ge, and Mg2Sn %A Vazquez, F. %A Forman, Richard %A Cardona, Manuel %B Physical Review %V 176 %P 905 - 908 %8 Jan-12-1968 %G eng %U http://link.aps.org/doi/10.1103/PhysRev.176.905 %N 3 %! Phys. Rev. %R 10.1103/PhysRev.176.905 %0 Journal Article %J Acta Chemica Scandinavica %D 1965 %T On the Properties of alpha-MnS and MnS2. %A Furuseth, Sigrid %A Kjekshus, Arne %A Niklasson, Rune J. V. %A Brunvoll, J. %A Hinton, Merv %B Acta Chemica Scandinavica %V 19 %P 1405 - 1410 %8 Jan-01-1965 %G eng %U http://actachemscand.org/doi/10.3891/acta.chem.scand.19-1405 %! Acta Chem. Scand. %R 10.3891/acta.chem.scand.19-1405 %0 Journal Article %J Journal of Applied Physics %D 1954 %T A New Silicon P-N Junction Photocell for Converting Solar Radiation into Electrical Power %A Chapin, D.M. %A Fuller, C.S. %A Pearson, G.L. %B Journal of Applied Physics %V 25 %P 676-677 %G eng %0 Journal Article %J American J. of Science %D 1883 %T On a New Form of Selenium Photocell %A Fritts, C.E. %B American J. of Science %V 26 %P 465 %G eng