TY - JOUR T1 - Pressure-induced structural phase transition in the IV–VI semiconductor SnS JF - Journal of Physics: Condensed Matter Y1 - 2004 A1 - Ehm, L A1 - Knorr, K A1 - Dera, P A1 - Krimmel, A A1 - Bouvier, P A1 - Mezouar, M AB - The structural behaviour of SnS under high-pressure has been investigated by angular dispersive synchrotron powder diffraction up to 38.5 GPa. A structural phase transition from orthorhombic α-SnS to monoclinic γ-SnS was observed at 18.15 GPa. The fit of a Birch–Murnaghan equation-of-state gave the volume at zero pressure of V0 = 192.6(3) Å3, the bulk modulus at zero pressure of B0 = 36.6(9) GPa and the pressure derivative of the bulk modulus B'=5.5(2) for α-SnS and V0 = 160(1) Å, B0 = 86.0(5) GPa and B'=4 for γ-SnS. The improper ferro-elastic transition is of first-order and is accompanied by a large volume discontinuity of about 9.1%. The phase transition can be described in terms of a group/subgroup relationship. The doubling of the unit cell indicates a wavevector (1/2,0,1/2) at the U-point in the Brillouin zone. VL - 16 UR - http://stacks.iop.org/0953-8984/16/i=21/a=004?key=crossref.fbc017dcad3d417136827c57d4ea2141 CP - 21 J1 - J. Phys.: Condens. Matter KW - Ehm2004 ER -