TY - JOUR T1 - Hall coefficient and reflectivity evidence that TiS 2 is a semiconductor JF - Journal of Physics C: Solid State Physics Y1 - 1979 A1 - E M Logothetis A1 - W J Kaiser A1 - C A Kukkonen A1 - S P Faile A1 - R Colella A1 - J Gambold AB - A series of measurements of the Hall coefficient, infrared reflectivity, thermoelectric power and electrical resistivity of Ti 1+x S 2 single crystals with various degrees of stoichiometry is described, where, for the first time, each measurement was made on the same crystal (or crystals from the same batch). None of these measurements taken alone can distinguish between the semimetallic or semiconducting models of TiS 2 . However, by making all four measurements on each sample, it has been possible to establish correlations between the results for different samples. It was found that the product of the Hall coefficient and the square of the plasma frequency is the same for all samples, a result that is consistent with a semiconductor model, but is inconsistent with a semimetal. Nevertheless the most stoichiometric samples remain metallic with electron concentrations of 2*10 20 cm -3 . It was also found that the resistivity data cannot be explained by carrier-carrier or optical phonon scattering. Therefore, both the source of the residual conduction electrons and the scattering mechanism in TiS 2 remain unknown. VL - 12 UR - http://stacks.iop.org/0022-3719/12/i=13/a=007 KW - Logothetis1979 ER - TY - JOUR T1 - Hall coefficient and reflectivity evidence that TiS 2 is a semiconductor JF - Journal of Physics C: Solid State Physics Y1 - 1979 A1 - Logothetis, E M A1 - W J Kaiser A1 - Kukkonen, C A A1 - S P Faile A1 - Colella, R A1 - J Gambold VL - 12 UR - http://stacks.iop.org/0022-3719/12/i=13/a=007?key=crossref.7b34e84721f0d96f60dce7c3e44ba4c7 CP - 13 J1 - J. Phys. C: Solid State Phys. KW - Logothetis1979a ER -