TY - Generic T1 - The Astronomical Almanac Y1 - 2020 A1 - U. S. Naval Observatory UR - http://asa.hmnao.com/ KW - Almanac ER - TY - JOUR T1 - Cd-Free Cu(In,Ga)(Se,S)2 Thin-Film Solar Cell With Record Efficiency of 23.35% JF - IEEE Journal of Photovoltaics Y1 - 2019 A1 - M. Nakamura A1 - K. Yamaguchi A1 - Y. Kimoto A1 - Y. Yasaki A1 - T. Kato A1 - H. Sugimoto VL - 9 UR - https://ieeexplore-ieee-org.udel.idm.oclc.org/document/8825469/authors#authors KW - Nakamura2019Cdfree ER - TY - JOUR T1 - Analysis of the recombination mechanisms of a silicon solar cell with low bandgap-voltage offset JF - Journal of Applied Physics Y1 - 2017 A1 - Augusto, André A1 - Herasimenka, Stanislau Y. A1 - King, Richard R. A1 - Bowden, Stuart G. A1 - Honsberg, Christiana VL - 121 UR - http://aip.scitation.org/doi/10.1063/1.4984071http://aip.scitation.org/doi/pdf/10.1063/1.4984071http://aip.scitation.org/doi/pdf/10.1063/1.4984071http://aip.scitation.org/doi/am-pdf/10.1063/1.4984071 CP - 20 J1 - Journal of Applied Physics KW - Augusto2017 ER - TY - JOUR T1 - Progress in thin film CIGS photovoltaics–Research and development, manufacturing, and applications JF - Progress in Photovoltaics: Research and Applications Y1 - 2017 A1 - Feurer, Thomas A1 - Reinhard, Patrick A1 - Avancini, Enrico A1 - Bissig, Benjamin A1 - Löckinger, Johannes A1 - Fuchs, Peter A1 - Carron, Romain A1 - Weiss, Thomas Paul A1 - Perrenoud, Julian A1 - Stutterheim, Stephan A1 - Buecheler, Stephan A1 - Tiwari, Ayodhya N. VL - 25 KW - feurer2017progress ER - TY - JOUR T1 - Effects of heavy alkali elements in Cu (In, Ga) Se2 solar cells with efficiencies up to 22.6% JF - physica status solidi (RRL)–Rapid Research Letters Y1 - 2016 A1 - Jackson, Philip A1 - Wuerz, Roland A1 - Hariskos, Dimitrios A1 - Lotter, Erwin A1 - Witte, Wolfram A1 - Powalla, Michael VL - 10 KW - jackson2016effects ER - TY - JOUR T1 - Generalized quantum efficiency analysis for non-ideal solar cells: Case of Cu 2 ZnSnSe 4 JF - Journal of Applied Physics Y1 - 2016 A1 - Charles J. Hages A1 - Carter, Nathaniel J. A1 - Rakesh Agrawal VL - 119 UR - http://aip.scitation.org/doi/10.1063/1.4939487http://aip.scitation.org/doi/pdf/10.1063/1.4939487 CP - 1 J1 - Journal of Applied Physics KW - Hages2016 ER - TY - JOUR T1 - Optoelectronic and material properties of nanocrystal-based \{CZTSe\} absorbers with Ag-alloying JF - Solar Energy Materials and Solar Cells Y1 - 2016 A1 - Charles J. Hages A1 - Mark J. Koeper A1 - Rakesh Agrawal KW - Characterization AB - Abstract In this work, the benefits of Ag-alloying in kesterite solar cells are explored in terms of tunable band gap, improved grain growth, improved minority carrier lifetime, reduced defect formation, and reduced potential fluctuations for (Ag,Cu)2ZnSnSe4 (ACZTSe) absorbers relative to Cu2ZnSnSe4 (CZTSe). The enhanced optoelectronic properties are shown to scale here with the degree of Ag-alloying in ACZTSe. The impacts of these effects on device performance are discussed, with improvement in average device performance/open-circuit voltage reported for \{ACZTSe\} (5%-Ag) absorbers relative to \{CZTSe\} absorbers with similar band gap. These initial results are promising for the Ag-alloyed \{ACZTSe\} material system as \{VOC\} limitations are the primary cause of poor device performance in kesterite solar cells, and cation substitution presents a unique method to tune the defect properties of kesterite absorbers. Herein, nanoparticle synthesis and large-grain \{ACZTSe\} absorber formation is described followed by material and optoelectronic characterization. Additionally, \{RTP\} processing is presented to achieve fully selenized large-grain chalcogenide absorbers from sulfide nanocrystal inks. VL - 145, Part 3 UR - http://www.sciencedirect.com/science/article/pii/S0927024815005504 KW - Hages2016opto ER - TY - JOUR T1 - Over 9% Efficient Kesterite Cu 2 ZnSnS 4 Solar Cell Fabricated by Using Zn 1- x Cd x S Buffer Layer JF - Advanced Energy Materials Y1 - 2016 A1 - Sun, Kaiwen A1 - Yan, Chang A1 - Liu, Fangyang A1 - Huang, Jialiang A1 - Zhou, Fangzhou A1 - Stride, John A. A1 - Martin A Green A1 - Hao, Xiaojing VL - 6 UR - http://doi.wiley.com/10.1002/aenm.201600046https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Faenm.201600046 CP - 12 J1 - Adv. Energy Mater. KW - Sun2016 ER - TY - ABST T1 - Test Method for Determination of the Spectral Mismatch Parameter Between a Photovoltaic Device and a Photovoltaic Reference Cell Y1 - 2016 UR - http://www.astm.org/cgi-bin/resolver.cgi?E973-16 KW - ASTM2016 ER - TY - JOUR T1 - Trigonal Cu 2 -II-Sn-VI 4 (II = Ba, Sr and VI = S, Se) quaternary compounds for earth-abundant photovoltaics JF - Phys. Chem. Chem. Phys. Y1 - 2016 A1 - Hong, Feng A1 - Lin, Wenjun A1 - Meng, Weiwei A1 - Yan, Yanfa VL - 18 UR - http://xlink.rsc.org/?DOI=C5CP06977G CP - 6 J1 - Phys. Chem. Chem. Phys. KW - Hong2016 ER - TY - JOUR T1 - Development of high-performance multicrystalline silicon for photovoltaic industry JF - Progress in Photovoltaics: Research and Applications Y1 - 2015 A1 - Yang, Y. M. A1 - Yu, A. A1 - Hsu, B. A1 - Hsu, W. C. A1 - Yang, A. A1 - Lan, C. W. AB - The low cost and high quality of multicrystalline silicon (mc‐Si) based on directional solidification has become the main stream in photovoltaic (PV) industry. The mc‐Si quality affects directly the conversion efficiency of solar cells, and thus, it is crucial to the cost of PV electricity. With the breakthrough of crystal growth technology, the so‐called high‐performance mc‐Si has increased about 1% in solar cell efficiency from 16.6% in 2011 to 17.6% in 2012 based on the whole ingot performance. In this paper, we report our development of this high‐performance mc‐Si. The key ideas behind this technology for defect control are discussed. With the high‐performance mc‐Si, we have achieved an average efficiency of near 17.8% and an open‐circuit voltage (Voc) of 633 mV in production. The distribution of cell efficiency was rather narrow, and low‐efficiency cells (<17%) were also very few. The power of the 60‐cell module using the high‐efficiency cells could reach 261 W as well. VL - 23 UR - http://doi.wiley.com/10.1002/pip.v23.3http://doi.wiley.com/10.1002/pip.2437https://onlinelibrary.wiley.com/doi/full/10.1002/pip.2437https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fpip.2437 CP - 3 J1 - Prog. Photovolt: Res. Appl. KW - Yang2013 ER - TY - JOUR T1 - Strategic review of secondary phases, defects and defect-complexes in kesterite CZTS–Se solar cells JF - Energy Environ. Sci. Y1 - 2015 A1 - Kumar, Mukesh A1 - Dubey, Ashish A1 - Adhikari, Nirmal A1 - Venkatesan, Swaminathan A1 - Qiao, Qiquan VL - 8 UR - http://xlink.rsc.org/?DOI=C5EE02153G CP - 11 J1 - Energy Environ. Sci. KW - Kumar2015 ER - TY - JOUR T1 - Device characteristics of CZTSSe thin-film solar cells with 12.6% efficiency JF - Advanced Energy Materials Y1 - 2014 A1 - Wang, Wei A1 - Winkler, Mark T A1 - Oki Gunawan A1 - Tayfun Gokmen A1 - Todorov, Teodor K A1 - Zhu, Yu A1 - Mitzi, David B VL - 4 KW - wang2014device ER - TY - CONF T1 - Recent R&D progress in solar frontier's small-sized Cu (InGa)(SeS)2 solar cells T2 - 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) Y1 - 2014 A1 - Nakamura, Motoshi A1 - Yoneyama, Nobutaka A1 - Horiguchi, Kyouhei A1 - Iwata, Yasuaki A1 - Yamaguchi, Koji A1 - Sugimoto, Hiroki A1 - Kato, Takuya JA - 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) PB - IEEE KW - nakamura2014recent ER - TY - JOUR T1 - The Recombination Parameter J0 JF - Energy Procedia Y1 - 2014 A1 - Andrés Cuevas AB - The parameter J0, commonly used in solar cell modelling, has a deep physical meaning, which this paper intends to clarify. Upon examination, J0 can be identified as the recombination current density in thermal equilibrium. In many cases the same equilibrium parameter J0 can be used to describe carrier recombination under external illumination. Nevertheless, when carriers flow from the point where they are generated towards a high recombination site the value of J0 that matters to solar cell operation differs from that in equilibrium. In addition, J0, may in certain cases be dependent on the excess carrier concentration. We conclude by recommending that J0 be referred to as a recombination parameter. VL - 55 UR - http://www.sciencedirect.com/science/article/pii/S1876610214012971# J1 - Energy Procedia KW - Cuevas2014 ER - TY - JOUR T1 - Band tailing and efficiency limitation in kesterite solar cells JF - Applied Physics Letters Y1 - 2013 A1 - Tayfun Gokmen A1 - Oki Gunawan A1 - Teodor K. Todorov A1 - David B. Mitzi VL - 103 UR - http://dx.doi.org/10.1063/1.4820250 KW - Gokmen2013 ER - TY - JOUR T1 - High-efficiency Cu(In,Ga)Se2 cells and modules JF - Solar energy materials and solar cells Y1 - 2013 A1 - Powalla, Michael A1 - Jackson, Philip A1 - Witte, Wolfram A1 - Hariskos, Dimitrios A1 - Paetel, Stefan A1 - Tschamber, Carsten A1 - Wischmann, Wiltraud VL - 119 KW - powalla2013high ER - TY - JOUR T1 - The Influence of Absorber Thickness on Cu(In,Ga)Se2 Solar Cells With Different Buffer Layers JF - IEEE journal of photovoltaics Y1 - 2013 A1 - Pettersson, Jonas A1 - Törndahl, Tobias A1 - Platzer-Björkman, Charlotte A1 - Hultqvist, Adam A1 - Edoff, Marika VL - 3 UR - https://ieeexplore.ieee.org/abstract/document/6579660 KW - pettersson2013influence ER - TY - Generic T1 - Minerals Yearbook, Vol. I, Metals & Minerals: Y1 - 2013 A1 - Lisa A. Corathers PB - U.S. Government Printing Office UR - http://minerals.usgs.gov/minerals/pubs/commodity/silicon/mcs-2013-simet.pdf KW - usgs_silicon_2013 ER - TY - CONF T1 - SPIE ProceedingsNon PN junction solar cells using carrier selective contacts T2 - SPIE OPTOPhysics, Simulation, and Photonic Engineering of Photovoltaic Devices II Y1 - 2013 A1 - Bowden, Stuart A1 - Ghosh, Kunal A1 - Honsberg, Christiana JA - SPIE OPTOPhysics, Simulation, and Photonic Engineering of Photovoltaic Devices II PB - SPIE CY - San Francisco, California, USA UR - http://proceedings.spiedigitallibrary.org/proceeding.aspx?doi=10.1117/12.2004259 KW - Bowden2013 ER - TY - CHAP T1 - Cu(In,Ga)Se2 Thin-Film Solar Cells T2 - Solar Cells: Materials, Manufacture and Operation Y1 - 2012 A1 - Rau, U. A1 - Schock, H.W. A1 - Castaner, L ED - McEvoy, Augustin ED - Markvart, Tom JA - Solar Cells: Materials, Manufacture and Operation PB - Academic Press CY - London KW - mcevoy2012solar ER - TY - JOUR T1 - Facile Synthesis of Colloidal CuO Nanocrystals for Light-Harvesting Applications JF - Journal of Nanomaterials Y1 - 2012 A1 - Lim, Yee-Fun A1 - Choi, Joshua J. A1 - Hanrath, Tobias VL - 20123312825910287 UR - http://www.hindawi.com/journals/jnm/2012/393160/ CP - 710315291 J1 - Journal of Nanomaterials KW - Lim2012 ER - TY - JOUR T1 - From the Cover: Anomalously weak solar convection JF - Proceedings of the National Academy of Sciences Y1 - 2012 A1 - Hanasoge, S. M. A1 - Duvall, T. L. A1 - Sreenivasan, K. R. AB - Convection in the solar interior is thought to comprise structures on a spectrum of scales. This conclusion emerges from phenomenological studies and numerical simulations, though neither covers the proper range of dynamical parameters of solar convection. Here, we analyze observations of the wavefield in the solar photosphere using techniques of time-distance helioseismology to image flows in the solar interior. We downsample and synthesize 900 billion wavefield observations to produce 3 billion cross-correlations, which we average and fit, measuring 5 million wave travel times. Using these travel times, we deduce the underlying flow systems and study their statistics to bound convective velocity magnitudes in the solar interior, as a function of depth and spherical-harmonic degree ℓ. Within the wavenumber band ℓ < 60, convective velocities are 20–100 times weaker than current theoretical estimates. This constraint suggests the prevalence of a different paradigm of turbulence from that predicted by existing models, prompting the question: what mechanism transports the heat flux of a solar luminosity outwards? Advection is dominated by Coriolis forces for wavenumbers ℓ < 60, with Rossby numbers smaller than approximately 10-2 at r/R⊙ = 0.96, suggesting that the Sun may be a much faster rotator than previously thought, and that large-scale convection may be quasi-geostrophic. The fact that isorotation contours in the Sun are not coaligned with the axis of rotation suggests the presence of a latitudinal entropy gradient. VL - 109 CP - 30 J1 - Proceedings of the National Academy of Sciences KW - Hanasoge2012 ER - TY - JOUR T1 - Improved quantitative description of Auger recombination in crystalline silicon JF - Physical Review B Y1 - 2012 A1 - Richter, Armin A1 - Stefan W. Glunz A1 - Werner, Florian A1 - Jan Schmidt A1 - Andrés Cuevas AB - An accurate quantitative description of the Auger recombination rate in silicon as a function of the dopant density and the carrier injection level is important to understand the physics of this fundamental mechanism and to predict the physical limits to the performance of silicon based devices. Technological progress has permitted a near suppression of competing recombination mechanisms, both in the bulk of the silicon crystal and at the surfaces. This, coupled with advanced characterization techniques, has led to an improved determination of the Auger recombination rate, which is lower than previously thought. In this contribution we present a systematic study of the injection-dependent carrier recombination for a broad range of dopant concentrations of high-purity n-type and p-type silicon wafers passivated with state-of-the-art dielectric layers of aluminum oxide or silicon nitride. Based on these measurements, we develop a general parametrization for intrinsic recombination in crystalline silicon at 300 K consistent with the theory of Coulomb-enhanced Auger and radiative recombination. Based on this improved description we are able to analyze physical aspects of the Auger recombination mechanism such as the Coulomb enhancement. VL - 86 CP - 16 J1 - Phys. Rev. B KW - Richter2012 ER - TY - JOUR T1 - Isotextured Silicon Solar Cell Analysis and Modeling 1: Optics JF - IEEE Journal of Photovoltaics Y1 - 2012 A1 - Baker-Finch, Simeon C. A1 - McIntosh, Keith R. A1 - Terry, Mason L. VL - 2 CP - 4 J1 - IEEE J. Photovoltaics KW - 533 ER - TY - JOUR T1 - MEASURING THE SOLAR RADIUS FROM SPACE DURING THE 2003 AND 2006 MERCURY TRANSITS JF - The Astrophysical Journal Y1 - 2012 A1 - Emilio, M. A1 - Kuhn, J. R. A1 - Bush, R. I. A1 - Scholl, I. F. VL - 750 UR - http://stacks.iop.org/0004-637X/750/i=2/a=135?key=crossref.05e0b42eda734799131016b454577c66http://stacks.iop.org/0004-637X/750/i=2/a=135/pdf CP - 2 J1 - ApJ KW - Emilio2012 ER - TY - ICOMM T1 - Measuring the Universe Y1 - 2012 A1 - International Astronomical Union PB - International Astronomical Union VL - 2018 KW - IAU2012 ER - TY - CONF T1 - OPAL 2: Rapid optical simulation of silicon solar cells T2 - 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC)2012 38th IEEE Photovoltaic Specialists Conference Y1 - 2012 A1 - McIntosh, Keith R. A1 - Baker-Finch, Simeon C. AB - The freeware program OPAL 2 computes the optical losses associated with the front surface of a Si solar cell. It calculates the losses for any angle of incidence within seconds, where the short computation time is achieved by decoupling the ray tracing from the Fresnel equations. Amongst other morphologies, OPAL 2 can be used to assess the random-pyramid texture of c-Si solar cells, or the `isotexture' of mc-Si solar cells, and to determine (i) the optimal thickness of an antireflection coating with or without encapsulation, (ii) the impact of imperfect texturing, such as non-ideal texture angles, over-etched isotexture, and flat regions, and (iii) the subsequent 1D generation profile in the Si. This paper describes the approach and assumptions employed by OPAL 2 and presents examples that demonstrate the dependence of optical losses on texture quality and incident angle. JA - 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC)2012 38th IEEE Photovoltaic Specialists Conference PB - IEEE CY - Austin, TX, USA SN - 978-1-4673-0064-3 KW - 532 ER - TY - ICOMM T1 - Synthesis and Purification of Bulk Semiconductors Y1 - 2012 A1 - C. Smith A1 - A Barron UR - http://cnx.org/content/m23936/1.7/ KW - Smith2012 ER - TY - JOUR T1 - Colloidal Iron Pyrite (FeS 2 ) Nanocrystal Inks for Thin-Film Photovoltaics JF - Journal of the American Chemical Society Y1 - 2011 A1 - Puthussery, James A1 - Seefeld, Sean A1 - Berry, Nicholas A1 - Gibbs, Markelle A1 - Law, Matt VL - 133 UR - http://pubs.acs.org/doi/abs/10.1021/ja1096368http://pubs.acs.org/doi/pdf/10.1021/ja1096368 CP - 4 J1 - J. Am. Chem. Soc. KW - puthussery2011 ER - TY - CHAP T1 - Cu(InGa)Se2 Solar Cells T2 - Handbook of photovoltaic science and engineering Y1 - 2011 A1 - Shafarman, William A1 - Sieventritt, Susanne A1 - Stolt, Lars ED - Luque, Antonio ED - Hegedus, Steven JA - Handbook of photovoltaic science and engineering PB - John Wiley & Sons KW - luque2011handbook ER - TY - JOUR T1 - Effects of electrical contacts on the photoconductive gain of nanowire photodetectors JF - Applied Physics Letters Y1 - 2011 A1 - Park, Hongsik A1 - Kim, Jin Ho A1 - Beresford, Roderic A1 - Xu, Jimmy VL - 99 UR - http://link.aip.org/link/APPLAB/v99/i14/p143110/s1&Agg=doi CP - 14 J1 - Appl. Phys. Lett. KW - Park2011 ER - TY - JOUR T1 - Electronic structure of TiS2 and its electric transport properties under high pressure JF - Journal of Applied Physics Y1 - 2011 A1 - Liu, Bao A1 - Yang, Jie A1 - Han, Yonghao A1 - Hu, Tingjing A1 - Ren, Wanbin A1 - Liu, Cailong A1 - Ma, Yanzhang A1 - Gao, Chunxiao VL - 109 UR - http://link.aip.org/link/JAPIAU/v109/i5/p053717/s1&Agg=doi CP - 5 J1 - J. Appl. Phys. KW - Liu2011 ER - TY - JOUR T1 - Extraction of important electrical parameters of CuO JF - Physica B: Condensed Matter Y1 - 2011 A1 - Serin, T. A1 - Yildiz, A. A1 - Şahin, Ş. A1 - Serin, N. VL - 406 UR - http://linkinghub.elsevier.com/retrieve/pii/S0921452610010999 CP - 3 J1 - Physica B: Condensed Matter KW - Serin2011 ER - TY - JOUR T1 - Fabrication and Characterization of CuO-based Solar Cells JF - Journal of Materials Science Research Y1 - 2011 A1 - KIDOWAKI, Hiroki A1 - OKU, Takeo A1 - Akiyama, Tsuyoshi A1 - SUZUKI, Atsushi A1 - JEYADEVAN, Balachandran A1 - Cuya, Jhon VL - 1 UR - http://www.ccsenet.org/journal/index.php/jmsr/article/view/14002 CP - 1 J1 - JMSR KW - Kidowaki2011 ER - TY - THES T1 - Heterojunction and Nanostructured Photovoltaic Device: Theory and Experiment Y1 - 2011 A1 - Ghosh, Kunal KW - a-Si/c-Si heterojunction KW - Alternative energy KW - Engineering KW - Nanostructure KW - Photovoltaics KW - Solar AB - A primary motivation of research in photovoltaic technology is to obtain higher efficiency photovoltaic devices at reduced cost of production so that solar electricity can be cost competitive. The majority of photovoltaic technologies are based on p-n junction, with efficiency potential being much lower than the thermodynamic limits of individual technologies and thereby providing substantial scope for further improvements in efficiency. The thesis explores photovoltaic devices using new physical processes that rely on thin layers and are capable of attaining the thermodynamic limit of photovoltaic technology. Silicon heterostructure is one of the candidate technologies in which thin films induce a minority carrier collecting junction in silicon and the devices can achieve efficiency close to the thermodynamic limits of silicon technology. The thesis proposes and experimentally establishes a new theory explaining the operation of silicon heterostructure solar cells. The theory will assist in identifying the optimum properties of thin film materials for silicon heterostructure and help in design and characterization of the devices, along with aiding in developing new devices based on this technology. The efficiency potential of silicon heterostructure is constrained by the thermodynamic limit (31%) of single junction solar cell and is considerably lower than the limit of photovoltaic conversion (\textasciitilde 80 %). A further improvement in photovoltaic conversion efficiency is possible by implementing a multiple quasi-fermi level system (MQFL). A MQFL allows the absorption of sub band gap photons with current being extracted at a higher band-gap, thereby allowing to overcome the efficiency limit of single junction devices. A MQFL can be realized either by thin epitaxial layers of alternating higher and lower band gap material with nearly lattice matched (quantum well) or highly lattice mismatched (quantum dot) structure. The thesis identifies the material combination for quantum well structure and calculates the absorption coefficient of a MQFl based on quantum well. GaAsSb (barrier)/InAs(dot) was identified as a candidate material for MQFL using quantum dot. The thesis explains the growth mechanism of GaAsSb and the optimization of GaAsSb and GaAs heterointerface. PB - Arizona State University UR - http://hdl.handle.net/2286/R.I.14312 KW - Ghosh2011 ER - TY - JOUR T1 - The path towards a high-performance solution-processed kesterite solar cell JF - Solar Energy Materials and Solar Cells Y1 - 2011 A1 - David B. Mitzi A1 - Oki Gunawan A1 - Teodor K. Todorov A1 - Kejia Wang A1 - Supratik Guha KW - Solution processing AB - Despite the promise of thin-film Cu(In,Ga)(S,Se)2 (CIGSSe) chalcopyrite and CdTe photovoltaic technologies with respect to reducing cost per watt of solar energy conversion, these approaches rely on elements that are either costly and/or rare in the earth's crust (e.g., In, Ga, Te) or that present toxicity issues (e.g., Cd), thereby potentially limiting these technologies in terms of future cost reduction and production growth. In order to develop a photovoltaic technology that is truly compatible with terawatt deployment, it is desirable to consider material systems that employ less toxic and lower cost elements, while maintaining the advantages of the chalcopyrite and CdTe materials with respect to appropriate direct band gap tunability over the solar spectrum, high device performance (e.g., >10% power conversion efficiency) and compatibility with low-cost manufacturing. In this review, the development of kesterite-based Cu2ZnSn(S,Se)4 (CZTSSe) thin-film solar cells, in which the indium and gallium from \{CIGSSe\} are replaced by the readily available elements zinc and tin, will be reviewed. While vacuum-deposited devices have enabled optimization within the compositional phase space and yielded selenium-free \{CZTS\} device efficiencies of as high as 6.8%, more recently a liquid-based approach has been described that has enabled deposition of \{CZTSSe\} devices with power conversion efficiency of 9.7%, bringing the kesterite-based technology into a range of potential commercial interest. Electrical characterization studies on these high-performance \{CZTSSe\} cells reveal some of the key loss mechanisms (e.g., dominant interface recombination, high series resistance and low minority carrier lifetime) that limit the cell performance. Further elucidation of these mechanisms, as well as building an understanding of long-term device stability, are required to help propel this relatively new technology forward. VL - 95 UR - http://www.sciencedirect.com/science/article/pii/S0927024810006719 KW - Mitzi2011 ER - TY - RPRT T1 - Silicon and Ferrosilicon: Global Industry Markets and Outlook, 13th edition Y1 - 2011 PB - Roskill CY - London SN - 978 0 86214 573 6 UR - http://www.roskill.com/reports/steel-alloys/silicon KW - roskill2011 ER - TY - JOUR T1 - A Theoretical Search for Efficient Dopants in Mg2X (X = Si, Ge, Sn) Thermoelectric Materials JF - Journal of Electronic Materials Y1 - 2011 A1 - Zwolenski, P. A1 - Tobola, J. A1 - Kaprzyk, S. VL - 40 UR - http://link.springer.com/10.1007/s11664-011-1624-yhttp://www.springerlink.com/index/pdf/10.1007/s11664-011-1624-y CP - 5 J1 - Journal of Elec Materi KW - Zwolenski2011 ER - TY - CONF T1 - Gen III: Improved Performance at Lower Cost T2 - 35th IEEE Photovoltaic Specialists Conference Y1 - 2010 A1 - Peter J. Cousins A1 - David D. Smith A1 - Hsin-Chiao Luan A1 - Jane Manning A1 - Tim D. Dennis A1 - Ann Waldhaue A1 - Karen E. Wilson A1 - Gabriel Harley A1 - William P. Mulligan JA - 35th IEEE Photovoltaic Specialists Conference PB - IEEE CY - Honolulu, Hawaii N1 -
KW - Cousins2010 ER - TY - JOUR T1 - GISS Surface Temperature Analysis Y1 - 2010 A1 - NASA UR - http://data.giss.nasa.gov/gistemp/graphs/ N1 -
KW - NASA2010 ER - TY - JOUR T1 - Green synthesis of tunable Cu(In1−xGax)Se2 nanoparticles using non-organic solvents JF - Green Chemistry Y1 - 2010 A1 - Al Juhaiman, Layla A1 - Scoles, Ludmila A1 - Kingston, David A1 - Patarachao, Bussaraporn A1 - Wang, Dashan A1 - Bensebaa, Farid VL - 12 UR - http://xlink.rsc.org/?DOI=c001813a CP - 7 J1 - Green Chem. KW - Juhaiman2010 ER - TY - JOUR T1 - Optical properties of copper indium diselenide thin films JF - Chalcogenide Letters Y1 - 2010 A1 - Prabahar, S A1 - Balasubramanian, V A1 - Suryanarayanan, N A1 - Muthukumarasamy, N VL - 7 KW - Prabahar2010 ER - TY - JOUR T1 - Solar Cell Device Physics Y1 - 2010 A1 - Stephen J. Fonash PB - Academic Press SN - 978-0-12-374774-7 UR - http://www.amazon.com/Solar-Cell-Device-Physics-Second/dp/0123747740/ref=sr_1_1?s=books&ie=UTF8&qid=1279652144&sr=1-1 N1 -

1. Introduction

2. Material Properties and Device Physics Basic to Photovoltaics

3. Structures, Materials, and Scale

4. Homojunction Solar Cells

5. Semiconductor-semiconductor Heterojunction Solar Cells

6. Surface-barrier Solar Cells

7. Dye-sensitized Solar Cells

Appendicies

KW - Fonash2009 ER - TY - JOUR T1 - Solar cell efficiency tables (version 35) JF - Progress in Photovoltaics: Research and Applications Y1 - 2010 A1 - Martin A Green A1 - Keith Emery A1 - Yoshihiro Hishikawa A1 - Wilhelm Warta KW - Conversion efficiency KW - Energy conversion KW - solar cells KW - Solar energy KW - Solar power generation AB -

Consolidated tables showing an extensive listing of the highest independently confirmed efficiencies for solar cells and modules are presented. Guidelines for inclusion of results into these tables are outlined and new entries since July 2009 are reviewed. Copyright 2010 John Wiley Sons, Ltd.

VL - 18 UR - http://dx.doi.org/10.1002/pip.974 N1 -

Compendex

KW - Green2010 ER - TY - JOUR T1 - Sonochemical synthesis, characterization and thermal and optical analysis of CuO nanoparticles JF - Physica B: Condensed Matter Y1 - 2010 A1 - Ranjbar-Karimi, Reza A1 - Bazmandegan-Shamili, Alireza A1 - Aslani, Alireza A1 - Kaviani, Karim VL - 405 UR - http://linkinghub.elsevier.com/retrieve/pii/S0921452610003832 CP - 15 J1 - Physica B: Condensed Matter KW - Ranjbar2010 ER - TY - JOUR T1 - Structure and photovoltaic activity of cupric oxide-based thin film solar cells JF - Journal of the Ceramic Society of Japan Y1 - 2010 A1 - MOTOYOSHI, Ryosuke A1 - OKU, Takeo A1 - KIDOWAKI, Hiroki A1 - SUZUKI, Atsushi A1 - KIKUCHI, Kenji A1 - KIKUCHI, Shiomi A1 - JEYADEVAN, Balachandran VL - 118 UR - http://joi.jlc.jst.go.jp/JST.JSTAGE/jcersj2/118.1021?from=CrossRef CP - 1383 J1 - J. Ceram. Soc. Japan KW - Motoyoshi2010 ER - TY - JOUR T1 - Towards solar grade silicon: Challenges and benefits for low cost photovoltaics JF - Solar Energy Materials and Solar Cells Y1 - 2010 A1 - Pizzini, Sergio VL - 94 UR - http://linkinghub.elsevier.com/retrieve/pii/S0927024810000310 CP - 9 J1 - Solar Energy Materials and Solar Cells KW - pizzini2010 ER - TY - Generic T1 - World’s Highest Efficiency Triple-junction Solar Cells Fabricated by Inverted Layers Transfer Process T2 - 35 IEEE Photovoltaic Specialist Conference Y1 - 2010 A1 - Takamoto, T. A1 - Agui, T. A1 - Yoshida, A. A1 - Nakaido, K. A1 - Juso, H. A1 - Sasaki, K. A1 - Nakamura, K. A1 - Yamaguchi, H. A1 - Kodama, T. A1 - Washio, H. A1 - Imazumi, M. A1 - Takahashi, M. JA - 35 IEEE Photovoltaic Specialist Conference CY - Honolulu HI, USA N1 -
KW - Takamoto2010 ER - TY - JOUR T1 - Copper oxide thin film and nanowire as a barrier in ZnO dye-sensitized solar cells JF - Thin Solid Films Y1 - 2009 A1 - Raksa, Phathaitep A1 - Nilphai, Sanpet A1 - Gardchareon, Atcharawon A1 - Choopun, Supab VL - 517 UR - http://linkinghub.elsevier.com/retrieve/pii/S0040609009004799 CP - 17 J1 - Thin Solid Films KW - Raksa2009 ER - TY - JOUR T1 - Crystal and electronic band structure of Cu2ZnSnX4 (X= S and Se) photovoltaic absorbers: first-principles insights JF - Applied Physics Letters Y1 - 2009 A1 - Chen, Shiyou A1 - Gong, XG A1 - Walsh, Aron A1 - Wei, Su-Huai VL - 94 KW - chen2009crystal ER - TY - JOUR T1 - Development of CZTS-based thin film solar cells JF - Thin Solid Films Y1 - 2009 A1 - Hironori Katagiri A1 - Jimbo, Kazuo A1 - Maw, Win Shwe A1 - Oishi, Koichiro A1 - Yamazaki, Makoto A1 - Araki, Hideaki A1 - Takeuchi, Akiko VL - 517 KW - Katagiri2009 ER - TY - Generic T1 - METAMORPHIC GaInP/GaInAs/Ge TRIPLE-JUNCTION SOLAR CELLS WITH > 41 % EFFICIENCY T2 - 34th IEEE Photovoltaic Specialists Conference Y1 - 2009 A1 - F. Dimroth A1 - W. Guter A1 - J. Schöne A1 - E. Welser A1 - M. Steiner A1 - E. Oliva A1 - A. Wekkeli A1 - G. Siefer A1 - S.P. Philipps A1 - A.W. Bett JA - 34th IEEE Photovoltaic Specialists Conference N1 -
KW - Dimroth2009 ER - TY - JOUR T1 - The path to 25% silicon solar cell efficiency: History of silicon cell evolution JF - Progress in Photovoltaics: Research and Applications Y1 - 2009 A1 - Martin A Green VL - 17 N1 -
KW - Green2009 ER - TY - JOUR T1 - Physics of Solar Cells Y1 - 2009 A1 - Peter Würfel PB - Wiley-VCH CY - Mörlenbach, Germany SN - 978-3-527-40857-3 UR - http://www.amazon.com/Physics-Solar-Cells-Principles-Concepts/dp/3527404287 N1 -

1. Problems of the Energy Economy

2. Photons

3. Semiconductors

4. Conversion of Thermal Radiation into Chemical Energy

5. Conversion of Chemical Energy into Electrical Energy

6. Basic Structure of Solar Cells

7. Limitations on Energy Conversion in Solar Cells

8. Concepts for Improving the Efficiency of Solar Cells

9. Prospects for the Future

Solutions

Appendix

References

Index

KW - Wurfel2005 ER - TY - JOUR T1 - Structural, optical, and electrical properties of tin sulfide thin films grown by spray pyrolysis JF - Thin Solid Films Y1 - 2009 A1 - Calixto-Rodriguez, M. A1 - Martinez, H. A1 - Sanchez-Juarez, A. A1 - Campos-Alvarez, J. A1 - Tiburcio-Silver, A. A1 - Calixto, M.E. VL - 517 UR - http://linkinghub.elsevier.com/retrieve/pii/S0040609008014077http://api.elsevier.com/content/article/PII:S0040609008014077?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:S0040609008014077?httpAccept=text/plain CP - 7 J1 - Thin Solid Films KW - Calixto2009 ER - TY - CONF T1 - Study of SnS:Bi thin films prepared by sulfurization T2 - 2009 34th IEEE Photovoltaic Specialists Conference (PVSC)2009 34th IEEE Photovoltaic Specialists Conference (PVSC) Y1 - 2009 A1 - Botero, M. A1 - Bartolo Perez, P. A1 - Calderon, C. A1 - Romero, E. A1 - Gordillo, G. JA - 2009 34th IEEE Photovoltaic Specialists Conference (PVSC)2009 34th IEEE Photovoltaic Specialists Conference (PVSC) PB - IEEE CY - Philadelphia, PA, USA SN - 978-1-4244-2949-3 UR - http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=5411154 KW - Botero2009 ER - TY - JOUR T1 - Surfactant-Assisted Hydrothermal Synthesis of Single phase Pyrite FeS 2 Nanocrystals JF - Chemistry of Materials Y1 - 2009 A1 - Wadia, Cyrus A1 - Wu, Yue A1 - Gul, Sheraz A1 - Volkman, Steven K. A1 - Guo, Jinghua A1 - Alivisatos, A. Paul VL - 21 UR - http://pubs.acs.org/doi/abs/10.1021/cm901273vhttp://pubs.acs.org/doi/pdf/10.1021/cm901273v CP - 13 J1 - Chem. Mater. KW - wadia2009 ER - TY - JOUR T1 - Synthesis of Cu2ZnSnS4 nanocrystals for use in low-cost photovoltaics JF - Journal of the American Chemical Society Y1 - 2009 A1 - Steinhagen, Chet A1 - Panthani, Matthew G A1 - Akhavan, Vahid A1 - Goodfellow, Brian A1 - Koo, Bonil A1 - Korgel, Brian A VL - 131 KW - steinhagen2009synthesis ER - TY - JOUR T1 - Synthesis of Cu2ZnSnS4 Nanocrystal Ink and Its Use for Solar Cells JF - Journal of the American Chemical Society Y1 - 2009 A1 - Guo, Qijie A1 - Hillhouse, Hugh W. A1 - Rakesh Agrawal VL - 131 UR - http://pubs.acs.org/doi/abs/10.1021/ja904981rhttp://pubs.acs.org/doi/pdf/10.1021/ja904981r CP - 33 J1 - J. Am. Chem. Soc. KW - Guo2009 ER - TY - Generic T1 - Tenorite Mineral Data Y1 - 2009 A1 - D. Barthelmy UR - http://webmineral.com/data/Tenorite.shtml KW - Tenorite2009 ER - TY - JOUR T1 - Analysis of tandem solar cell efficiencies under {AM1.5G} spectrum using a rapid flux calculation method JF - Progress in Photovoltaics: Research and Applications Y1 - 2008 A1 - S. P. Bremner A1 - M. Y. Levy A1 - Christiana B Honsberg AB -

We report the use of a rapid flux calculation method using incomplete Riemann zeta functions as a replacement for the {Bose-Einstein} integral in detailed balance calculations to study the efficiency of tandem solar cell stacks under the terrestrial {AM1.5G} spectrum and under maximum concentration. The maximum limiting efficiency for unconstrained and constrained tandem stacks of up to eight solar cells, under the {AM1.5G} spectrum and maximum concentration, are presented. The results found agree well with previously published results with one exception highlighting the precautions necessary when calculating for devices under the {AM1.5G} spectrum. The band gap sensitivities of two tandem solar cell stack arrangements of current interest were also assessed. In the case of a three solar cell tandem stack the results show a large design space and illustrate that the constrained case is more sensitive to band gap variations. Finally, the effect of a non-optimum uppermost band gap in a series constrained five solar cell tandem stack was investigated. The results indicate that a significant re-design is only required when the uppermost band gap is greater than the optimum value with a relatively small effect on the limiting efficiency. It is concluded that this rapid flux calculation method is a powerful tool for the analysis of tandem solar cells and is particularly useful for the design of devices where optimum band gaps may not be available. Copyright © 2007 John Wiley & Sons, Ltd.

VL - 16 UR - http://dx.doi.org/10.1002/pip.799 KW - Bremner2008 ER - TY - JOUR T1 - Electrochemical Impedance Spectroscopy of Synthetic Pyrite Doped with As, Co, and Ni JF - Journal of The Electrochemical Society Y1 - 2008 A1 - Lehner, Stephen A1 - Ciobanu, Madalina A1 - Savage, Kaye A1 - Cliffel, David E. VL - 155 UR - http://jes.ecsdl.org/cgi/doi/10.1149/1.2885103https://syndication.highwire.org/content/doi/10.1149/1.2885103 CP - 5 J1 - J. Electrochem. Soc. KW - lehner2008 ER - TY - JOUR T1 - Polymorphic Tin Sulfide Thin Films of Zinc Blende and Orthorhombic Structures by Chemical Deposition JF - Journal of The Electrochemical Society Y1 - 2008 A1 - Avellaneda, David A1 - Nair, M. T. S. A1 - Nair, P. K. AB - Polycrystalline thin films (100–450nm in thickness) of SnS formed from chemical baths of Sn(II) in acetic acid/HCl solution, triethanolamine, NH3 (aq), and thioacetamide are polymorphic consisting of zinc blende (ZB) and orthorhombic (OR) structures. The ZB structure for the SnS film, reported in this work for the first time, has a lattice constant a=0.579nm and a direct (forbidden) bandgap of 1.7eV , which is distinct from that of SnS(ZB) , about 1eV . The electrical conductivity of SnS(ZB) is 6×10−6 (Ωcm)−1 p-type, with activation energies for the conductivity of 0.5eV at room temperature and 1.6meV near 10K . When a SnS(ZB) film is heated in air at 500°C for 30min , part of it transforms to SnO2 and to SnS(OR) ; after 2h 30min at 550°C in air the film converts to transparent SnO2 . Such a film has a bandgap of 3.7eV and electrical conductivity, ∼1 (Ωcm)−1 . Photovoltaic effect in different structures involving these films is presented. VL - 155 UR - http://jes.ecsdl.org/cgi/doi/10.1149/1.2917198 CP - 7 J1 - J. Electrochem. Soc. KW - Avellaneda2008 ER - TY - JOUR T1 - REST2: High-performance solar radiation model for cloudless-sky irradiance, illuminance, and photosynthetically active radiation – Validation with a benchmark dataset JF - Solar Energy Y1 - 2008 A1 - Gueymard, Christian A. VL - 82 UR - https://linkinghub.elsevier.com/retrieve/pii/S0038092X07000990https://api.elsevier.com/content/article/PII:S0038092X07000990?httpAccept=text/xmlhttps://api.elsevier.com/content/article/PII:S0038092X07000990?httpAccept=text/plain CP - 3 J1 - Solar Energy KW - g2008 ER - TY - JOUR T1 - Self-consistent optical parameters of intrinsic silicon at 300 K including temperature coefficients JF - Solar Energy Materials and Solar Cells Y1 - 2008 A1 - Martin A Green KW - Absorption coefficient KW - optical properties KW - SILICON SOLAR CELLS AB - An updated tabulation is presented of the optical properties of intrinsic silicon, of particular interest in solar cell calculations. Improved values of absorption coefficient, refractive index and extinction coefficient at {300&\#xa0;K} are tabulated over the 0.25–1.45&\#xa0;μm wavelength range at 0.01&\#xa0;μm intervals. The self-consistent tabulation was derived from {Kramers–Kronig} analysis of updated reflectance data deduced from the literature. The inclusion of normalised temperature coefficients allows extrapolation over a wide temperature range, with accuracy similar to that of available experimental data demonstrated over the {−24&\#xa0;°C} to {200&\#xa0;°C} range. VL - 92 UR - http://www.sciencedirect.com/science/article/pii/S0927024808002158 KW - green_self-consistent_2008 ER - TY - JOUR T1 - Applied Photovoltaics Y1 - 2007 A1 - Wenham, S.R. A1 - Martin A Green A1 - Watt, M. E. A1 - R. Corkish AB -
PB - Earthscan CY - London, UK SN - 1-84407-401-3 UR - http://www.amazon.com/Applied-Photovoltaics-Stuart-R-Wenham/dp/1844074013/ref=sr_1_1?ie=UTF8&s=books&qid=1279558328&sr=8-1 N1 -

Introduction

1. The Characteristics of Sunlight

2. Semiconductors and P-N Junctions

3. The Behavior of Solar Cells

4. Cell Properties and Design

5. PV Cell Interconnection and Module Fabrication

6. Stand-Alone Photovoltaic System Components

7. Designing Stand-Alone Photovoltaic Systems

8. Specific Purpose Photovoltaic Applications

9. Remote Area Power Supply Systems

10. Grid-Connected Photovoltaic Systems

11. Photovoltaic Water Pumping System Components

12. PV Water Pumping System Design

Appendicies

Index

KW - Wenham2007 ER - TY - JOUR T1 - Arsenic in iron disulfides in a brown coal from the North Bohemian Basin, Czech Republic JF - International Journal of Coal Geology Y1 - 2007 A1 - Rieder, Milan A1 - Crelling, John C. A1 - Šustai, Ondřej A1 - Drábek, Milan A1 - Weiss, Zdeněk A1 - Klementová, Mariana VL - 71 UR - http://linkinghub.elsevier.com/retrieve/pii/S0166516206001480http://api.elsevier.com/content/article/PII:S0166516206001480?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:S0166516206001480?httpAccept=text/plain CP - 2-3 J1 - International Journal of Coal Geology KW - rieder2007 ER - TY - JOUR T1 - On the band diagram of Mg2Si/Si heterojunction as deduced from optical constants dispersions JF - Thin Solid Films Y1 - 2007 A1 - Atanassov, A. A1 - Baleva, M. VL - 515 UR - http://linkinghub.elsevier.com/retrieve/pii/S0040609006010054 CP - 5 J1 - Thin Solid Films KW - Atanassov2007 ER - TY - JOUR T1 - Crystallinity and surface effects on Young’s modulus of CuO nanowires JF - Applied Physics Letters Y1 - 2007 A1 - Tan, E. P. S. A1 - Zhu, Y. A1 - Yu, T. A1 - Dai, L. A1 - Sow, C. H. A1 - Tan, V. B. C. A1 - Lim, C. T. VL - 90 UR - http://link.aip.org/link/APPLAB/v90/i16/p163112/s1&Agg=doi CP - 16 J1 - Appl. Phys. Lett. KW - Tan2007 ER - TY - JOUR T1 - Effects of Copper Oxide/Gold Electrode as the Source-Drain Electrodes in Organic Thin-Film Transistors JF - Electrochemical and Solid-State Letters Y1 - 2007 A1 - Park, Jeong-Woo A1 - Baeg, Kang-Jun A1 - Ghim, Jieun A1 - Kang, Seok-Ju A1 - Park, Jeong-Ho A1 - Kim, Dong-Yu VL - 10 UR - http://esl.ecsdl.org/cgi/doi/10.1149/1.2774683 CP - 11 J1 - Electrochem. Solid-State Lett. KW - Park2007 ER - TY - Generic T1 - Low Cost, High Volume Production of >22% Efficiency Silicon Solar Cells T2 - 22nd European Photovoltaic Specialist Conference Y1 - 2007 A1 - De Ceuster, D. A1 - P. Cousins A1 - D. Rose A1 - M. Cudzinovic A1 - W. Mulligan JA - 22nd European Photovoltaic Specialist Conference N1 -
KW - DeCeuster2007 ER - TY - JOUR T1 - Optical and structural properties of manganese sulfide thin films JF - Optical Materials Y1 - 2007 A1 - Gümüş, C. A1 - Ulutaş, C. A1 - Ufuktepe, Y. AB - Highly transparent crystalline manganese sulfide (γ-MnS) thin films were prepared on glass substrate by chemical bath deposition (CBD) method at room temperature (27 °C). The refractive index n(λ), extinction coefficient k(λ) and film thickness t are evaluated from spectrophotometric transmittance spectrum by using envelope method. The optical band gap of the film was estimated to be 3.88 eV. XRD measurements show that the MnS films are crystallized in the wurtzite phase and present a preferential orientation along the c-axis. The effect of trisodium citrate on crystalline films has been determined. The grain size of the film is estimated to be 29.8 nm using by the Scherrer’s formula. VL - 29 UR - http://linkinghub.elsevier.com/retrieve/pii/S0925346706001972 CP - 9 J1 - Optical Materials KW - Gumus2007 ER - TY - JOUR T1 - A review and comparison of different methods to determine the series resistance of solar cells JF - Solar Energy Materials and Solar Cells Y1 - 2007 A1 - PYSCH, D A1 - A. Mette A1 - Stefan W. Glunz VL - 91 N1 -
KW - Pysch2007 ER - TY - JOUR T1 - Series resistance characterization of industrial silicon solar cells with screen-printed contacts using hotmelt paste JF - Progress in Photovoltaics: Research and Applications Y1 - 2007 A1 - A. Mette A1 - et al VL - 15 N1 -
KW - Mette2007 ER - TY - JOUR T1 - Global temperature change JF - Proceedings of the National Academy of Sciences Y1 - 2006 A1 - Hansen, J. VL - 103 N1 -
KW - Hansen2006 ER - TY - CONF T1 - Low Light Performance of Mono-Crystalline Silicon Solar Cells T2 - 4th World Conference on Photovoltaic Energy Conference Y1 - 2006 A1 - Gabriela Bunea A1 - Karen Wilson A1 - Yevgeny Meydbray A1 - Matthew Campbell A1 - Denis De Ceuster JA - 4th World Conference on Photovoltaic Energy Conference CY - Waikoloa, HI UR - http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4059885&tag=1 KW - bunea_low_2006 ER - TY - JOUR T1 - Microstructure dependent physical properties of evaporated tin sulfide films JF - Journal of Applied Physics Y1 - 2006 A1 - Devika, M. A1 - Ramakrishna Reddy, K. T. A1 - Koteeswara Reddy, N. A1 - Ramesh, K. A1 - Ganesan, R. A1 - Gopal, E. S. R. A1 - Gunasekhar, K. R. AB - In the field of photovoltaics, semiconductors of the III-V group such as GaAs and InP have been considered as the most efficient absorber materials due to their direct energyband gap and high mobility. In these compounds, arsenic and phosphorus are highly toxic and expensive. In this work we present systematic preparation of low cost SnS thin films and characterize these films to test their suitability for photovoltaic applications. We have observed that the films (with thickness ≅0.5μm) grown at the substrate temperature of 275°C exhibit a low resistive single SnS phase and have a direct optical band gap of 1.35eV with an absorption coefficient of ∼105cm−1. SnSfilms could be alternative semiconductor materials as absorbers for the fabrication of photovoltaic devices. VL - 100 UR - http://scitation.aip.org/content/aip/journal/jap/100/2/10.1063/1.2216790 CP - 2 J1 - J. Appl. Phys. KW - Devika2006 ER - TY - JOUR T1 - Preparation and characterization of nanostructured CuO thin films for photoelectrochemical splitting of water JF - Bulletin of Materials Science Y1 - 2006 A1 - Chauhan, Diwakar A1 - Satsangi, VR A1 - Dass, Sahab A1 - Shrivastav, Rohit VL - 29 KW - Chauhan2006 ER - TY - JOUR T1 - Rapid and precise calculations of energy and particle flux for detailed-balance photovoltaic applications JF - Solid-State Electronics Y1 - 2006 A1 - M. Y. Levy A1 - Christiana B Honsberg VL - 50 KW - Levy2006 ER - TY - BOOK T1 - Semiconductor material and device characterization Y1 - 2006 A1 - Dieter Schroder PB - IEEE Press; Wiley CY - Piscataway NJ; Hoboken N.J. SN - 9780471739067 KW - Schroder2006 ER - TY - JOUR T1 - Annealing effects on the properties of copper oxide thin films prepared by chemical deposition JF - Semiconductor Science and Technology Y1 - 2005 A1 - Serin, Necmi A1 - Serin, ülay A1 - Şeyda Horzum A1 - Çelik, Yasemin VL - 20 UR - http://stacks.iop.org/0268-1242/20/i=5/a=012?key=crossref.e80ad675d4be3b601f49e0d1d5cceb0d CP - 5 J1 - Semicond. Sci. Technol. KW - Serin2005 ER - TY - JOUR T1 - Annealing effects on the properties of copper oxide thin films prepared by chemical deposition JF - Semiconductor Science and Technology Y1 - 2005 A1 - Necmi Serin A1 - Tülay Serin A1 - Şeyda Horzum A1 - Yasemin Çelik AB - We have investigated the annealing effect on the structural, optical and electrical properties of copper oxide films prepared on glass substrates by chemical deposition. The films were annealed in air for different temperatures ranging from 200 to 350 °C. X-ray diffraction patterns showed that the films as-deposited and annealed at 200 and 250 °C are of cuprite structure with composition Cu 2 O. Annealing at 300 °C converts these films to CuO. This conversion is accompanied by a shift in the optical band gap from 2.20 eV to 1.35 eV. Also this conversion was obtained by the dc electrical conductivity and FTIR spectroscopy measurements. VL - 20 UR - http://stacks.iop.org/0268-1242/20/i=5/a=012 KW - Serin2005 ER - TY - Generic T1 - Approaching the 29% limit efficiency of silicon solar cells T2 - Thirty-First IEEE Photovoltaic Specialists Conference Y1 - 2005 A1 - Richard M Swanson JA - Thirty-First IEEE Photovoltaic Specialists Conference PB - 01/2005 CY - Lake buena Vista, FL, USA N1 -
KW - Swanson2005 ER - TY - JOUR T1 - Characterization of electrical properties and photosensitivity of SnS thin films prepared by the electrochemical deposition method JF - Solar Energy Materials and Solar Cells Y1 - 2005 A1 - Sato, Naoya A1 - Ichimura, Masaya A1 - Arai, Eisuke A1 - Yamazaki, Yoshihisa AB - Using the electrochemical deposition (ECD) method, we prepared tin sulfide thin films, which are suitable for the absorption layer in solar cells because of its bandgap energy (∼1 eV). We first optimized pulse-form biasing for ECD by characterizing deposited samples with scanning electron microscope, Auger electron spectroscopy and X-ray diffraction measurements. Then, we investigated the electrical properties of deposited SnS thin films and the properties of contacts with several different metals. Furthermore, we observed the photoconductivity of the films by means of photoelectrochemical measurements. From these results, we confirmed that the SnS thin films show p-type conduction. VL - 85 UR - http://linkinghub.elsevier.com/retrieve/pii/S0927024804002077http://api.elsevier.com/content/article/PII:S0927024804002077?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:S0927024804002077?httpAccept=text/plain CP - 2 J1 - Solar Energy Materials and Solar Cells KW - Sato2005 ER - TY - JOUR T1 - Electrical properties of spray pyrolytic tin sulfide films JF - Solid-State Electronics Y1 - 2005 A1 - Koteeswara Reddy, N. A1 - Ramakrishna Reddy, K.T. AB - Tin sulfide (SnxSy) films were prepared using spray pyrolysis technique at different substrate temperatures (Ts), (100–450 °C) on Corning 7059 glass substrates. The physical parameters such as electrical resistivity, Hall mobility and net carrier density of the films were determined at room temperature. The films grown in the substrate temperature range, 300–375 °C, were found to be p-type conducting. These SnS films showed average electrical resistivity of ∼30 Ω cm, Hall mobility of ∼130 cm2/V s and carrier density, >1015 cm−3. The temperature dependence of electrical conductivity of the films was also studied and the activation energies evaluated. The results obtained were discussed and reported. VL - 49 UR - http://linkinghub.elsevier.com/retrieve/pii/S0038110105000845 CP - 6 J1 - Solid-State Electronics KW - Koteeswara2005 ER - TY - JOUR T1 - First-principles calculations of the structural, electronic and optical properties of IIA-IV antifluorite compounds JF - physica status solidi (b) Y1 - 2005 A1 - Benhelal, O. A1 - Chahed, A. A1 - Laksari, S. A1 - Abbar, B. A1 - Bouhafs, B. A1 - Aourag, H. VL - 242 UR - http://doi.wiley.com/10.1002/%28ISSN%291521-3951http://doi.wiley.com/10.1002/pssb.v242:10http://doi.wiley.com/10.1002/pssb.200540063 CP - 10 J1 - phys. stat. sol. (b) KW - Benhelal2005 ER - TY - JOUR T1 - First-principles study of the electronic properties of A2B3 minerals, with A=Bi,Sb and B=S,Se JF - Physics and Chemistry of Minerals Y1 - 2005 A1 - Caracas, Razvan A1 - Gonze, Xavier AB - We determine the valence electron density and the electron band structure of stibnite, bismutinite, guanajuatite and antimonelite using the density functional theory. All the compounds present similar electronic properties and exhibit a quasi-1D character. We perform a detailed analysis of the charge topology, the atomic static charges and volumes. VL - 32 UR - http://rruff.geo.arizona.edu/AMS/authors/Caracas%20R CP - 4 J1 - Phys Chem Minerals KW - Caracas2005 ER - TY - JOUR T1 - Fundamental boron-oxygen-related carrier lifetime limit in mono- and multicrystalline silicon JF - Progress in Photovoltaics: Research and Applications Y1 - 2005 A1 - Bothe, Karsten A1 - Sinton, Ron A1 - Jan Schmidt VL - 13 N1 -
KW - Bothe2005 ER - TY - JOUR T1 - Nanocrystalline CuO films prepared by pyrolysis of Cu-arachidate LB multilayers JF - Colloids and Surfaces A: Physicochemical and Engineering Aspects Y1 - 2005 A1 - Parhizkar, M. A1 - Singh, Sukhvinder A1 - Nayak, P.K. A1 - Kumar, Nigvendra A1 - Muthe, K.P. A1 - Gupta, S.K. A1 - Srinivasa, R.S. A1 - Talwar, S.S. A1 - Major, S.S. VL - 257-258 UR - http://linkinghub.elsevier.com/retrieve/pii/S0927775704007320 J1 - Colloids and Surfaces A: Physicochemical and Engineering Aspects KW - Parhizkar2005 ER - TY - JOUR T1 - Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence JF - Applied Physics Letters Y1 - 2005 A1 - Takashi Fuyuki A1 - Hayato Kondo A1 - Tsutomu Yamazaki A1 - Yu Takahashi A1 - Yukiharu Uraoka KW - carrier lifetime KW - electroluminescence KW - elemental semiconductors KW - MINORITY CARRIERS KW - SILICON KW - solar cells PB - AIP VL - 86 UR - http://link.aip.org/link/?APL/86/262108/1 KW - Fuyuki2005 ER - TY - JOUR T1 - Photovoltaic Solar Energy Generation Y1 - 2005 A1 - Adolf Goetzberger A1 - Volker Uwe Hoffmann PB - Springer CY - Berlin, Germany SN - 3-540-23676-7 UR - http://www.amazon.com/Photovoltaic-Solar-Energy-Generation-Goetzberger/dp/3642062601/ref=sr_1_2?s=books&ie=UTF8&qid=1279649098&sr=1-2 N1 -

1. What is Photovoltaics?

2. Physics of Solar Cells

3. Silicon Solar Cell Material and Technology

4. Crystalline Thin-Film Silicon

5. Other Materials, New Concepts

6. Solar Cells and Solar Modules

7. PV Systems

8. PV Systems Installation Possibilities

9. Environmental Impacts by PV Systems

10. Efficinecy and Performance of PV Systems

11. PV Markets Support Measures and Costs

12. The Future PV

13. Other (Perhaps Competing) CO2-Free Energy Sources

14. Popular Killing Arguments Against PV

References

Index

KW - Goetzberger2005 ER - TY - JOUR T1 - Room temperature growth of CuO nanorod arrays on copper and their application as a cathode in dye-sensitized solar cells JF - Materials Chemistry and Physics Y1 - 2005 A1 - Anandan, Sambandam A1 - Wen, Xiaogang A1 - Yang, Shihe VL - 93 UR - http://linkinghub.elsevier.com/retrieve/pii/S0254058405001197 CP - 1 J1 - Materials Chemistry and Physics KW - Anandan2005 ER - TY - JOUR T1 - Thermoelectric properties of Bi-doped Mg2Si semiconductors JF - Physica B: Condensed Matter Y1 - 2005 A1 - Tani, Jun-ichi A1 - Kido, Hiroyasu VL - 364 UR - http://linkinghub.elsevier.com/retrieve/pii/S092145260500709X CP - 1-4 J1 - Physica B: Condensed Matter KW - Tani2005 ER - TY - JOUR T1 - Electronic color charts for dielectric films on silicon JF - Optics Express Y1 - 2004 A1 - Justin Henrie A1 - Spencer Kellis A1 - Stephen Schultz A1 - Aaron Hawkins KW - Color KW - measurement KW - optical properties KW - Thin films AB -

This paper presents the calculation of the perceived color of dielectric films on silicon. A procedure is shown for computing the perceived color for an arbitrary light source, light incident angle, and film thickness. The calculated color is converted into {RGB} parameters that can be displayed on a color monitor, resulting in the generation of electronic color charts for dielectric films. This paper shows generated electronic color charts for both silicon dioxide and silicon nitride films on silicon.

VL - 12 UR - http://www.opticsexpress.org/abstract.cfm?URI=oe-12-7-1464 N1 -
KW - Henrie2004 ER - TY - JOUR T1 - Exact analytical solutions of the parameters of real solar cells using Lambert W-function JF - Solar Energy Materials and Solar Cells Y1 - 2004 A1 - Jain, A VL - 81 UR - https://linkinghub.elsevier.com/retrieve/pii/S0927024803002605https://api.elsevier.com/content/article/PII:S0927-0248(03)00260-5?httpAccept=text/xmlhttps://api.elsevier.com/content/article/PII:S0927-0248(03)00260-5?httpAccept=text/plain CP - 2 J1 - Solar Energy Materials and Solar Cells KW - Jain2004 ER - TY - JOUR T1 - Influence of air annealing on the structural, optical and electrical properties of chemically deposited CdSe nano-crystallites JF - Applied Surface Science Y1 - 2004 A1 - Kale, R.B A1 - Lokhande, C.D VL - 223 UR - http://linkinghub.elsevier.com/retrieve/pii/S0169433203011541 CP - 4 J1 - Applied Surface Science KW - Kale2004 ER - TY - JOUR T1 - Pressure-induced structural phase transition in the IV–VI semiconductor SnS JF - Journal of Physics: Condensed Matter Y1 - 2004 A1 - Ehm, L A1 - Knorr, K A1 - Dera, P A1 - Krimmel, A A1 - Bouvier, P A1 - Mezouar, M AB - The structural behaviour of SnS under high-pressure has been investigated by angular dispersive synchrotron powder diffraction up to 38.5 GPa. A structural phase transition from orthorhombic α-SnS to monoclinic γ-SnS was observed at 18.15 GPa. The fit of a Birch–Murnaghan equation-of-state gave the volume at zero pressure of V0 = 192.6(3) Å3, the bulk modulus at zero pressure of B0 = 36.6(9) GPa and the pressure derivative of the bulk modulus B'=5.5(2) for α-SnS and V0 = 160(1) Å, B0 = 86.0(5) GPa and B'=4 for γ-SnS. The improper ferro-elastic transition is of first-order and is accompanied by a large volume discontinuity of about 9.1%. The phase transition can be described in terms of a group/subgroup relationship. The doubling of the unit cell indicates a wavevector (1/2,0,1/2) at the U-point in the Brillouin zone. VL - 16 UR - http://stacks.iop.org/0953-8984/16/i=21/a=004?key=crossref.fbc017dcad3d417136827c57d4ea2141 CP - 21 J1 - J. Phys.: Condens. Matter KW - Ehm2004 ER - TY - BOOK T1 - Semiconductors Data Handbook Y1 - 2004 A1 - Madelung, O PB - Springer CY - Berlin SN - 9783642188657 3642188656 UR - http://www.amazon.com/Semiconductors-Data-Handbook-Otfried-Madelung/dp/3540404880 KW - Madelung2004 ER - TY - BOOK T1 - Semiconductors Data Handbook Y1 - 2004 A1 - Madelung, O PB - Springer CY - Berlin SN - 9783642188657 3642188656 UR - http://www.amazon.com/Semiconductors-Data-Handbook-Otfried-Madelung/dp/3540404880 KW - Madelung2004b ER - TY - JOUR T1 - The American Mineralogist Crystal Structure Database JF - American Mineralogist Y1 - 2003 A1 - R. T. Downs A1 - M. Hall-Wallace VL - 88 KW - Downs2003 ER - TY - Generic T1 - Bismuthinite Y1 - 2003 A1 - Ralph, J. R UR - http://www.mindat.org/min-686.html KW - Ralph2003 ER - TY - Generic T1 - Dependence of aluminium alloying on solar cell processing conditions T2 - 13th Workshop on Crystalline Silicon Solar Cell Materials and Processes Y1 - 2003 A1 - Christiana B Honsberg A1 - Anwar, K.K. A1 - Mehrvarz, H.R. A1 - Cotter, J.E. A1 - Wenham, S.R. JA - 13th Workshop on Crystalline Silicon Solar Cell Materials and Processes N1 -
KW - Honsberg2003 ER - TY - JOUR T1 - Effects of NaF coevaporation on structural properties of Cu (In, Ga) Se2 thin films JF - Thin Solid Films Y1 - 2003 A1 - Rudmann, D A1 - Bilger, G A1 - Kaelin, M A1 - Haug, F-J A1 - Zogg, H A1 - Tiwari, AN VL - 431 KW - rudmann2003effects ER - TY - JOUR T1 - Electronic structures of semiconducting alkaline-earth metal silicides JF - Journal of Alloys and Compounds Y1 - 2003 A1 - Imai, Yoji A1 - Watanabe, Akio A1 - Mukaida, Masakazu VL - 358 UR - http://linkinghub.elsevier.com/retrieve/pii/S0925838803000379 CP - 1-2 J1 - Journal of Alloys and Compounds KW - Imai2003 ER - TY - JOUR T1 - Handbook of Photovoltaic Science and Engineering Y1 - 2003 A1 - Luque, A. A1 - Hegedus, S. PB - John Wiley & Sons Ltd. CY - Chichester, England SN - 0-471-49196-9 UR - http://www.amazon.com/Handbook-Photovoltaic-Science-Engineering-Antonio/dp/0471491969/ref=pd_sim_b_7 N1 -

1. Status, Trends, Challenges and the Bright Future of Solar Electricity from Photovoltaics. 

2. Motivation for Photovoltaic Application and Development

3. The Physics of the Solar Cell

4. Theoretical Limits of Photovoltaic Conversion

5. Solar Grade Silicon Feedstock 

6. Bulk Crystal Growth and Wafering for PV

7. Crystalline Silicon Solar Cells and Modules 

8. Thin-film Silicon Solar Cells 

9. High-efficiency III-V Multijunction Solar Cells

10. Space Solar Cells and Arrays

11. Photovoltaic Concentrators 

12. Amorphous Silicon-based Solar Cells 

13. Cu(InGa)Se2 Solar Cells

14. Cadmium Telluride Solar Cells

15. Dye-sensitized Solar Cells

16. Measurement and Characterization of Solar Cells and Modules

17. Photovoltaic Systems

18. Electrochemical Storage for Photovoltaics

19. Power Conditioning for Photovoltaic Power Systems

20. Energy Collected and Delivered by PV Modules

21. Economic Analysis and Environmental Aspects of Photovoltaic Systems

22. PV in Architecture

23. Photovoltaics and Development

24. Financing PV Growth 

Index

KW - Luque2003 ER - TY - JOUR T1 - The Physics of Solar Cells Y1 - 2003 A1 - Jenny Nelson AB -
PB - Imperial College Press CY - London, UK SN - 1-86094-340-3 UR - http://www.amazon.com/Physics-Solar-Properties-Semiconductor-Materials/dp/1860943497 N1 -

1. Introduction

2. Photons In, Electrons Out: Basic Principles of PV

3. Electrons and Holes and Semiconductors

4. Generation and Recombination

5. Junctions

6. Analysis of the p-n Junction

7. Monocrystalline Solar Cells

8. Thin Film Solar Cells

9. Managing Light

10. Over the Limit: Strategies for High Efficiency

Solutions

Index

KW - Nelson2003 ER - TY - JOUR T1 - Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing JF - Journal of Applied Physics Y1 - 2003 A1 - Pietro P Altermatt A1 - Schenk, Andreas A1 - Geelhaar, Frank A1 - Heiser, Gernot AB - The commonly used value of the intrinsic carrier density of crystalline silicon at 300 K is ni=1.00×1010 cm−3. It was experimentally determined by Sproul and Green, J. Appl. Phys. 70, 846 (1991), using specially designed solar cells. In this article, we demonstrate that the Sproul and Green experiment was influenced by band-gap narrowing, even though the dopant density of their samples was low (1014 to 1016 cm−3). We reinterpret their measurements by numerical simulations with a random-phase approximation model for band-gap narrowing, thereby obtaining ni=9.65×109 cm−3 at 300 K. This value is consistent with results obtained by Misiakos and Tsamakis, J. Appl. Phys. 74, 3293 (1993), using capacitance measurements. In this way, long-prevailing inconsistencies between independent measurement techniques for the determination of ni are resolved. VL - 93 CP - 3 J1 - J. Appl. Phys. KW - Altermatt2003 ER - TY - JOUR T1 - Solar Position Algorithm for Solar Radiation Applications Y1 - 2003 A1 - Reda, I A1 - Andreas, A N1 -
KW - Reda2003 ER - TY - JOUR T1 - First-principles studies of the structural and electronic properties of pyrite JF - Physical Review B Y1 - 2002 A1 - Muscat, Joseph A1 - Hung, Andrew A1 - Russo, Salvy A1 - Yarovsky, Irene VL - 65 UR - https://link.aps.org/doi/10.1103/PhysRevB.65.054107http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.65.054107/fulltexthttp://link.aps.org/article/10.1103/PhysRevB.65.054107 CP - 5 J1 - Phys. Rev. B KW - muscat2000 ER - TY - JOUR T1 - General parameterization of Auger recombination in crystalline silicon JF - Journal of Applied Physics Y1 - 2002 A1 - Mark J Kerr A1 - Andrés Cuevas KW - Auger effect KW - carrier lifetime KW - electron-hole recombination KW - elemental semiconductors KW - SILICON PB - AIP VL - 91 UR - http://link.aip.org/link/?JAP/91/2473/1 KW - Kerr2002 ER - TY - JOUR T1 - Generalized analysis of quasi-steady-state and transient decay open circuit voltage measurements JF - Journal of Applied Physics Y1 - 2002 A1 - Mark J Kerr A1 - Andrés Cuevas A1 - Ronald A. Sinton AB - The current–voltage characteristics of solar cells and photodiodes can be determined by measuring the open-circuit voltage as a function of a slowly varying light intensity. This article presents a detailed theoretical analysis and interpretation of such quasi-steady-state Voc measurements (QssVoc). The ability of this analysis to accurately obtain the true steady-state device characteristics even in the case of high lifetime, high resistivity silicon devices is demonstrated experimentally. The QssVoc technique can be used to determine the minority carrier lifetime, and the new generalized analysis is required to do this accurately. An important outcome is that solar cell and diode device characteristics can be obtained from measurements of either the photoconductance or the open-circuit voltage, even using transient techniques. VL - 91 N1 -
KW - Kerr2002 ER - TY - BOOK T1 - Materials handbook: [foundation for the science of metallurgy; compares the advantages and disadvantages of different manufacturing processes; comprehensive in approach]. Y1 - 2002 A1 - Brady, George S A1 - Clauser, Henry R A1 - Vaccari, John A PB - {McGraw-Hill} CY - New York [u.a.] SN - {007136076X} 9780071360760 UR - http://www.scribd.com/doc/6395226/Materials-Handboook KW - Brady2002 ER - TY - JOUR T1 - Physical properties and atomic arrangements in crystals JF - Reports on Progress in Physics Y1 - 2002 A1 - Wooster, W A VL - 16 UR - http://stacks.iop.org/0034-4885/16/i=1/a=302?key=crossref.19db72555e28e5cd250540ab6a946500 CP - 1 J1 - Rep. Prog. Phys. KW - wooster1953 ER - TY - JOUR T1 - Specifying targets of future research in photovoltaic devices containing pyrite (FeS2) by numerical modelling JF - Solar Energy Materials and Solar Cells Y1 - 2002 A1 - Pietro P Altermatt A1 - Kiesewetter, Tobias A1 - Ellmer, Klaus A1 - Tributsch, Helmut VL - 71 UR - http://linkinghub.elsevier.com/retrieve/pii/S0927024801000538http://api.elsevier.com/content/article/PII:S0927024801000538?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:S0927024801000538?httpAccept=text/plain CP - 2 J1 - Solar Energy Materials and Solar Cells KW - altermatt2002 ER - TY - JOUR T1 - 24.5% efficiency PERT silicon solar cells on SEH MCZ substrates and cell performance on other SEH CZ and FZ substrates JF - Solar Energy Materials and Solar Cells Y1 - 2001 A1 - Zhao, J. A1 - Aihua Wang A1 - Martin A Green VL - 66 N1 -
KW - Zhao2001 ER - TY - JOUR T1 - Analytical approximation of effective surface recombination velocity of dielectric-passivated p-type silicon JF - Solid-State Electronics Y1 - 2001 A1 - Brody, Jed A1 - Rohatgi, Ajeet VL - 45 UR - http://linkinghub.elsevier.com/retrieve/pii/S0038110101001691http://api.elsevier.com/content/article/PII:S0038110101001691?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:S0038110101001691?httpAccept=text/plain CP - 9 J1 - Solid-State Electronics KW - Brody2001 ER - TY - JOUR T1 - Computing the solar vector JF - Solar Energy Y1 - 2001 A1 - Manuel Blanco-Muriel A1 - Diego C. Alarcón-Padilla A1 - Teodoro López-Moratalla A1 - MartÍn Lara-Coira KW - Solar tracking VL - 70 UR - http://www.sciencedirect.com/science/article/B6V50-42G6KWJ-5/2/a61a5c50128325f281ca2e33e01de993 N1 -
KW - BlancoMuriel2001 ER - TY - JOUR T1 - Computing the solar vector JF - Solar Energy Y1 - 2001 A1 - Blanco-Muriel, Manuel A1 - Alarcón-Padilla, Diego C. A1 - López-Moratalla, Teodoro A1 - Lara-Coira, MartÍn VL - 70 UR - http://linkinghub.elsevier.com/retrieve/pii/S0038092X00001560http://api.elsevier.com/content/article/PII:S0038092X00001560?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:S0038092X00001560?httpAccept=text/plain CP - 5 J1 - Solar Energy KW - Blanco2001 ER - TY - JOUR T1 - Degradation of carrier lifetime in Cz silicon solar cells JF - Solar Energy Materials and Solar Cells Y1 - 2001 A1 - Stefan W. Glunz A1 - S. Rein A1 - W. Warta A1 - J. Knobloch A1 - W. Wettling KW - Defects VL - 65 UR - http://www.sciencedirect.com/science/article/B6V51-419BGN3-11/2/7ba9d473113c89089b6e79c1cd46775f N1 -
KW - Glunz2001 ER - TY - JOUR T1 - High performance light trapping textures for monocrystalline silicon solar cells JF - Solar Energy Materials and Solar Cells Y1 - 2001 A1 - Campbell, Patrick A1 - Martin A Green AB - Two novel texture schemes for the front of a c-Si silicon wafer solar cell are presented. The “bipyramid” texture is of two inverted pyramids of similar sizes laid out in alternating order. The “patch” texture uses a checkerboard layout of blocks of parallel grooves, with the grooves of alternating blocks perpendicularly oriented to each other. We estimate that these textures, which almost fully trap light for the first six passes through the substrate, can deliver better optical performance than the standard inverted pyramid texture, especially in narrow-band applications. VL - 65 CP - 1-4 J1 - Solar Energy Materials and Solar Cells KW - Campbell2001 ER - TY - JOUR T1 - Improvements in numerical modelling of highly injected crystalline silicon solar cells JF - Solar Energy Materials and Solar Cells Y1 - 2001 A1 - Pietro P Altermatt A1 - Sinton, R.A. A1 - G. Heiser AB -

We numerically model crystalline silicon concentrator cells with the inclusion of band gap narrowing (BGN) caused by injected free carriers. In previous studies, the revised room-temperature value of the intrinsic carrier density, ni=1.00x1010cm-3, was inconsistent with the other material parameters of highly injected silicon. In this paper, we show that high-injection experiments can be described consistently with the revised value of ni if free-carrier induced BGN is included, and that such BGN is an important effect in silicon concentrator cells. The new model presented here significantly improves the ability to model highly injected silicon cells with a high level of precision.

VL - 65 UR - http://www.ingentaconnect.com/content/els/09270248/2001/00000065/00000001/art00089" doi = "doi:10.1016/S0927-0248(00)00089-1 KW - Altermatt2001 ER - TY - Generic T1 - Natural Sunlight Calibration of Silicon Solar Cells. T2 - 17th European Photovoltaic Solar Energy Conference Y1 - 2001 A1 - W. Keogh A1 - Andrew W Blakers JA - 17th European Photovoltaic Solar Energy Conference CY - Munich, Germany N1 -
KW - Keogh2001 ER - TY - Generic T1 - A New Generalized Detailed Balance Formulation to Calculate Solar Cell Efficiency Limits T2 - 17th European Photovoltaic Solar Energy Conference Y1 - 2001 A1 - Christiana B Honsberg A1 - R. Corkish A1 - S. P. Bremner JA - 17th European Photovoltaic Solar Energy Conference N1 -
KW - Honsberg2001 ER - TY - CONF T1 - Rapid and Accurate Determination of Series Resistance and Fill Factor Losses in Industrial Silicon Solar Cells T2 - 17th European Photovoltaic Solar Energy Conference Y1 - 2001 A1 - S. Bowden A1 - A. Rohatgi JA - 17th European Photovoltaic Solar Energy Conference CY - Munich, Germany KW - Bowden2001 ER - TY - JOUR T1 - On the use of a bias-light correction for trapping effects in photoconductance-based lifetime measurements of silicon JF - Journal of Applied Physics Y1 - 2001 A1 - Daniel Macdonald A1 - Ronald A. Sinton A1 - Andrés Cuevas KW - CARRIER DENSITY KW - carrier lifetime KW - electron traps KW - electron-hole recombination KW - elemental semiconductors KW - hole traps KW - photoconductivity KW - SILICON KW - solar cells PB - AIP VL - 89 UR - http://link.aip.org/link/?JAP/89/2772/1 KW - Macdonald2001 ER - TY - THES T1 - Aluminium Back Surface Field in Buried Contact Solar Cells Y1 - 2000 A1 - Anwar, K.K. PB - University of New South Wales VL - Bachelor of Engineering N1 -
KW - Anwar2000 ER - TY - JOUR T1 - Coulomb-enhanced Auger recombination in crystalline silicon at intermediate and high injection densities JF - Journal of Applied Physics Y1 - 2000 A1 - Jan Schmidt A1 - Mark J Kerr A1 - Pietro P Altermatt KW - Auger effect KW - carrier lifetime KW - electron-hole recombination KW - elemental semiconductors KW - photoconductivity KW - SILICON PB - AIP VL - 88 UR - http://link.aip.org/link/?JAP/88/1494/1 KW - Schmidt2000 ER - TY - Generic T1 - The Influence of Edge Recombination on a Solar Cell’s IV Curve T2 - 16th European Photovoltaic Solar Energy Conference Y1 - 2000 A1 - McIntosh, K. R. A1 - Christiana B Honsberg JA - 16th European Photovoltaic Solar Energy Conference N1 -
KW - McIntosh2000 ER - TY - Generic T1 - Mapping of contact resistance and locating shunts on solar cells using Resistance Analysis by Mapping of Potential (RAMP) techniques T2 - 16th European Photovoltaic Solar Energy Conference Y1 - 2000 A1 - A.S.H. van der Heide A1 - et al JA - 16th European Photovoltaic Solar Energy Conference CY - Glasgow (United Kingdom) N1 -
KW - vanderHeide2000 ER - TY - Generic T1 - Outdoor measurement of 28% efficiency for a mini-concentrator module T2 - National Center for Photovoltaics Program Review Meeting Y1 - 2000 A1 - O’Neil, M.J. A1 - McDanal, A.J. JA - National Center for Photovoltaics Program Review Meeting CY - Denver, USA N1 -
KW - ONeil2000 ER - TY - JOUR T1 - Photoelectrochemical properties of copper oxide thin films coated on an n-Si substrate JF - Thin Solid Films Y1 - 2000 A1 - Ki Hyun Yoon A1 - Woo Jin Choi A1 - Dong Heon Kang KW - XPS AB - The photoelectrochemical properties of the copper oxide thin film coated on the n-type silicon electrode were investigated as a function of film deposition temperature. The variation in the deposition temperature affected the film morphology and the ratio of copper to oxygen. In case of the films deposited below 200°C, the main phase was found to be CuO while the amount of the Cu2O phase increased with further increases in deposition temperature. The n-silicon photoelectrode showed enhanced photocurrent–potential (I–V) properties by forming a copper oxide/n-silicon heterojunction. In particular, the electrode, which mainly consisted of a CuO phase, showed better photoelectrochemical conversion efficiencies compared to the Cu2O phase. This result was explained in terms of the electrical conductance and transmittance of the copper oxide film. VL - 372 UR - http://www.sciencedirect.com/science/article/pii/S0040609000010580 KW - Yoon2000 ER - TY - CONF T1 - A Quasi-Steady-State Open-Circuit Voltage Method for Solar Cell Characterization T2 - 16th European Photovoltaic Solar Energy Conference Y1 - 2000 A1 - Sinton, R.A. A1 - Andrés Cuevas JA - 16th European Photovoltaic Solar Energy Conference CY - Glasgow, Scotland KW - Sinton2000 ER - TY - Generic T1 - Simulating Electron-Beam-Induced Current Profiles Across p-n Junctions T2 - 16h European Solar Energy Conference Y1 - 2000 A1 - R. Corkish A1 - Luke, K. L. A1 - Pietro P Altermatt A1 - G. Heiser JA - 16h European Solar Energy Conference N1 -
KW - Corkish2000 ER - TY - CONF T1 - Simulating Electron-Beam-Induced Current Profiles Across p-n Junctions T2 - Proceedings of the 16h European Solar Energy Conference Y1 - 2000 A1 - R. Corkish A1 - Luke, K. L. A1 - Pietro P Altermatt A1 - G. Heiser JA - Proceedings of the 16h European Solar Energy Conference PB - James and James CY - Glasgow UK SN - 9781902916187 N1 -
KW - Corkish2000 ER - TY - JOUR T1 - Solar Electricity Y1 - 2000 A1 - Tomas Markvart PB - John Wiley & Sons CY - Chichester, England SN - 0-471-98853-7 UR - http://www.amazon.com/Solar-Electricity-2nd-Tomas-Markvart/dp/0471988537/ref=sr_1_1?s=books&ie=UTF8&qid=1279647029&sr=1-1 N1 -

1. Electricity from the Sun

2. Solar Radiation

3. Solar Cells

4. Photovoltaic System Engineering

5. Applications

6. Environmental Impacts of Photovoltaics

7. Advanced and Special Topics

Index

KW - Markvart2000 ER - TY - BOOK T1 - Solid State Electronic Devices Y1 - 2000 A1 - Ben G. Streetman PB - Prentice Hall N1 -
KW - Streetman2001 ER - TY - JOUR T1 - ZnSe thin films grown by chemical vapour deposition for application as buffer layer in CIGSS solar cells JF - Thin Solid Films Y1 - 2000 A1 - Rumberg, A. A1 - Sommerhalter, Ch. A1 - Toplak, M. A1 - Jäger-Waldau, A. A1 - Lux-Steiner, M.Ch. VL - 361-362 UR - http://linkinghub.elsevier.com/retrieve/pii/S0040609099007907http://api.elsevier.com/content/article/PII:S0040609099007907?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:S0040609099007907?httpAccept=text/plain J1 - Thin Solid Films KW - rumberg2000 ER - TY - JOUR T1 - Effects of Na on the electrical and structural properties of CuInSe2 JF - Journal of Applied Physics Y1 - 1999 A1 - Wei, Su-Huai A1 - Zhang, SB A1 - Zunger, Alex VL - 85 KW - wei1999effects ER - TY - JOUR T1 - Generalized analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductors JF - Journal of Applied Physics Y1 - 1999 A1 - Henning Nagel A1 - Christopher Berge A1 - Armin G Aberle KW - carrier lifetime KW - photoconductivity PB - AIP VL - 86 UR - http://link.aip.org/link/?JAP/86/6218/1 KW - Nagel1999 ER - TY - JOUR T1 - Na incorporation in Mo and CuInSe2 from production processes JF - Solar energy materials and solar cells Y1 - 1999 A1 - Rockett, Angus A1 - Granath, Karin A1 - Asher, S A1 - Al Jassim, MM A1 - Hasoon, F A1 - Matson, R A1 - Basol, B A1 - Kapur, V A1 - Britt, JS A1 - Gillespie, T A1 - others VL - 59 KW - rockett1999incorporation ER - TY - JOUR T1 - Photoeffects in cobalt doped pyrite (FeS 2 ) films JF - Solid State Communications Y1 - 1999 A1 - Thomas, B. A1 - Ellmer, K. A1 - Bohne, W. A1 - Röhrich, J. A1 - Kunst, M. A1 - Tributsch, H. VL - 111 UR - http://linkinghub.elsevier.com/retrieve/pii/S0038109899002136http://api.elsevier.com/content/article/PII:S0038109899002136?httpAccept=text/plainhttp://api.elsevier.com/content/article/PII:S0038109899002136?httpAccept=text/xml CP - 5 J1 - Solid State Communications KW - thomas1999 ER - TY - JOUR T1 - Photoelectrochemical cells based on chemically deposited nanocrystalline Bi2S3 thin films JF - Materials Chemistry and Physics Y1 - 1999 A1 - Mane, R.S. A1 - Sankapal, B.R. A1 - Lokhande, C.D. VL - 60 UR - http://linkinghub.elsevier.com/retrieve/pii/S0254058499000851 CP - 2 J1 - Materials Chemistry and Physics KW - Mane1999 ER - TY - Generic T1 - 19.8% Efficient Multicrystalline Silicon Solar Cells with Honeycomb Textured Front Surface T2 - 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion Y1 - 1998 A1 - Zhao, J. A1 - Wang, A. A1 - Martin A Green JA - 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion CY - Vienna, Austria N1 -
KW - Zhao1998 ER - TY - JOUR T1 - 19.8% efficient "honeycomb" textured multicrystalline and 24.4% monocrystalline silicon solar cells JF - Applied Physics Letters Y1 - 1998 A1 - Jianhua Zhao A1 - Aihua Wang A1 - Martin A Green A1 - Francesca Ferrazza KW - elemental semiconductors KW - SILICON KW - solar cells KW - surface texture PB - AIP VL - 73 UR - http://link.aip.org/link/?APL/73/1991/1 KW - Zhao1991 ER - TY - JOUR T1 - Copper oxide thin films prepared by chemical vapor deposition from copper dipivaloylmethanate JF - Solar Energy Materials and Solar Cells Y1 - 1998 A1 - Maruyama, Toshiro VL - 56 UR - http://linkinghub.elsevier.com/retrieve/pii/S0927024898001287 CP - 1 J1 - Solar Energy Materials and Solar Cells KW - Maruyama1998 ER - TY - Generic T1 - Improved Performance of Self-Aligned, Selective-Emitter Silicon Solar Cells T2 - 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion Y1 - 1998 A1 - Ruby, D. S. A1 - Yang, P. A1 - Zaidi, S. A1 - Brueck, S. A1 - Roy, M. A1 - Narayanan, S. JA - 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion CY - Vienna, Austria N1 -
KW - Ruby1998 ER - TY - JOUR T1 - Process and characterisation of chemical bath deposited manganese sulphide (MnS) thin films JF - Thin Solid Films Y1 - 1998 A1 - Lokhande, C.D. A1 - Ennaoui, A. A1 - Patil, P.S. A1 - Giersig, M. A1 - Muller, M. A1 - Diesner, K. A1 - Tributsch, H. VL - 330 UR - http://linkinghub.elsevier.com/retrieve/pii/S0040609098005008 CP - 2 J1 - Thin Solid Films KW - Lokhande1998 ER - TY - JOUR T1 - 20,000 PERL silicon cells for the "1996 World Solar Challenge" solar car race JF - Progress in Photovoltaics: Research and Applications Y1 - 1997 A1 - Zhao, J. A1 - Wang, A. A1 - Yun, F. A1 - Zhang, G. A1 - Roche, D.M. A1 - Wenham, S.R. A1 - Martin A Green VL - 5 N1 -
KW - Zhao1997 ER - TY - CONF T1 - Heterojunctions based on Cu2ZnSnS4 and Cu2ZnSnSe4 thin films T2 - 14th European PVSEC Y1 - 1997 A1 - Friedlmeier, Th Magorian A1 - Wieser, N A1 - Walter, Th A1 - Dittrich, H A1 - Schock, HW JA - 14th European PVSEC KW - friedlmeier1997heterojunctions ER - TY - Generic T1 - Isotropic texturing of multicrystalline silicon wafers with acidic texturing solutions T2 - Twenty Sixth IEEE Photovoltaic Specialists Conference Y1 - 1997 A1 - Einhaus, R. A1 - Vazsonyi, E. A1 - Szlufcik, J. A1 - Nijs, J. A1 - Mertens, R. JA - Twenty Sixth IEEE Photovoltaic Specialists Conference CY - New York, NY, USA N1 -
KW - Einhaus1997 ER - TY - Generic T1 - Low-cost industrial technologies of crystalline silicon solar cells T2 - Proceedings-of-the-IEEE Y1 - 1997 A1 - Szlufcik, J. A1 - Sivoththaman, S. A1 - Nlis, J.F. A1 - Mertens, R.P. A1 - Van-Overstraeten, R. JA - Proceedings-of-the-IEEE VL - 85 N1 -
KW - Szlufcik1997 ER - TY - JOUR T1 - Preparation and evaluation of Cu2ZnSnS4 thin films by sulfurization of E-B evaporated precursors JF - Solar Energy Materials and Solar Cells Y1 - 1997 A1 - Hironori Katagiri A1 - Nobuyuki Sasaguchi A1 - Shima Hando A1 - Suguro Hoshino A1 - Jiro Ohashi A1 - Takaharu Yokota KW - EB evaporated precursors AB - By sulfurization of EB evaporated precursors, CZTS(Cu2ZnSnS4) films could be prepared successfully. This semiconductor does not consist of any rare-metal such as In. The X-ray diffraction pattern of CZTS thin films showed that these films had a stannite structure. This study estimated the optical band gap energy as 1.45 eV. The optical absorption coefficient was in the order of 104cm−1. The resistivity was in the the order of 104 Ω cm and the conduction type was p-type. Fabricated solar cells, Al/ZnO/CdS/CZTS/Mo/Soda Lime Glass, showed an open-circuit voltage up to 400 mV. VL - 49 UR - http://www.sciencedirect.com/science/article/pii/S0927024897001190 KW - Katagiri1997 ER - TY - JOUR T1 - Preparation of Zinc Selenide Thin Films by Electrodeposition Technique for Solar Cell Applications JF - physica status solidi (a) Y1 - 1997 A1 - Chandramohan, R. A1 - Sanjeeviraja, C. A1 - Mahalingam, T. VL - 163 CP - 2 J1 - phys. stat. sol. (a) KW - Chandramohan1997 ER - TY - JOUR T1 - Recent progress in MIS solar cells JF - Progress in Photovoltaics: Research and Applications Y1 - 1997 A1 - Hezel, R. VL - 5 N1 -
KW - Hezel1997 ER - TY - Generic T1 - A simple processing sequence for selective emitters T2 - Twenty Sixth IEEE Photovoltaic Specialists Conference Y1 - 1997 A1 - Horzel, J. A1 - Szlufcik, J. A1 - Nijs, J. A1 - Mertens, R. JA - Twenty Sixth IEEE Photovoltaic Specialists Conference CY - New York, NY, USA N1 -
KW - Horzel1997 ER - TY - Generic T1 - Surface texturing using reactive ion etching for multicrystalline silicon solar cells T2 - Twenty Sixth IEEE Photovoltaic Specialists Conference Y1 - 1997 A1 - Fukui, K. A1 - Inomata, Y. A1 - Shirasawa, K. JA - Twenty Sixth IEEE Photovoltaic Specialists Conference CY - New York, NY, USA N1 -
KW - Fukui1997 ER - TY - JOUR T1 - Contactless determination of current–voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data JF - Applied Physics Letters Y1 - 1996 A1 - Ronald A. Sinton A1 - Andrés Cuevas KW - carrier lifetime KW - CV CHARACTERISTIC KW - MINORITY CARRIERS KW - photoconductivity KW - SEMICONDUCTOR MATERIALS KW - SILICON KW - STEADY – STATE CONDITIONS PB - AIP VL - 69 UR - http://link.aip.org/link/?APL/69/2510/1 KW - Sinton1996 ER - TY - JOUR T1 - Texturing of polycrystalline silicon JF - Solar Energy Materials and Solar Cells Y1 - 1996 A1 - M. J. Stocks A1 - A. J. Carr A1 - Andrew W Blakers VL - 40 UR - http://www.sciencedirect.com/science/article/B6V51-3VTFK7T-57/2/eb36bb8dfafef0de9e83d2f685caf541 KW - Stocks1996 ER - TY - JOUR T1 - Chemical deposition of Bi2S3 thin films from thioacetamide bath JF - Materials Chemistry and Physics Y1 - 1995 A1 - Desai, J.D. A1 - Lokhande, C.D. VL - 41 UR - http://linkinghub.elsevier.com/retrieve/pii/0254058495015388 CP - 2 J1 - Materials Chemistry and Physics KW - Desai1995 ER - TY - JOUR T1 - Optical properties of intrinsic silicon at 300 K JF - Progress in Photovoltaics: Research and Applications Y1 - 1995 A1 - Martin A Green A1 - Keevers, Mark J. VL - 3 N1 -
KW - Green1995 ER - TY - BOOK T1 - SMARTS2: a simple model of the atmospheric radiative transfer of sunshine: algorithms and performance assessment Y1 - 1995 A1 - Gueymard, Christian PB - Florida Solar Energy Center Cocoa, FL KW - gueymard1995 ER - TY - JOUR T1 - On some thermodynamic aspects of photovoltaic solar energy conversion JF - Solar Energy Materials and Solar Cells Y1 - 1995 A1 - Baruch, P. A1 - De Vos, A. A1 - Landsberg, P. T. A1 - J.E. Parrott VL - 36 KW - Baruch1995 ER - TY - JOUR T1 - Sun’s Role in Warming Is Discounted JF - Science Y1 - 1995 A1 - Kerr, R. A. VL - 268 N1 -
KW - Kerr1995 ER - TY - JOUR T1 - 7000 High Efficiency Cells for a Dream JF - Progress in Photovoltaics: Research and Applications Y1 - 1994 A1 - Verlinden, P.J. A1 - Richard M Swanson A1 - Crane, R.A. VL - 2 N1 -
KW - Verlinden1994 ER - TY - JOUR T1 - Attaining Thirty-Year Photovoltaic System Lifetime JF - Progress in Photovoltaics: Research and Applications Y1 - 1994 A1 - Durand, S. N1 -
KW - Durand1994 ER - TY - JOUR T1 - Buried contact concentrator solar cells JF - Progress in Photovoltaics: Research and Applications Y1 - 1994 A1 - Jordan, D. A1 - Nagle, J.P. VL - 2 N1 -
KW - Jordan1994 ER - TY - JOUR T1 - CVD routes to titanium disulfide films JF - Advanced Materials Y1 - 1994 A1 - Lewkebandara, T.S. A1 - Winter, Charles H. VL - 6 UR - http://doi.wiley.com/10.1002/adma.19940060313 CP - 3 J1 - Adv. Mater. KW - Lew1994 ER - TY - JOUR T1 - Defining terms for crystalline silicon solar cells JF - Progress in Photovoltaics: Research and Applications Y1 - 1994 A1 - Basore, P.A. VL - 2 N1 -
KW - Basore1994 ER - TY - JOUR T1 - Departures from the principle of superposition in silicon solar cells JF - Journal of Applied Physics Y1 - 1994 A1 - Robinson, S. J. A1 - Armin G Aberle A1 - Martin A Green VL - 76 N1 -
KW - Robinson1994 ER - TY - JOUR T1 - Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors JF - Journal of Applied Physics Y1 - 1994 A1 - A. B. Sproul KW - ANALYTICAL SOLUTION KW - carrier lifetime KW - DECAY KW - MINORITY CARRIERS KW - RECOMBINATION KW - SEMICONDUCTOR MATERIALS KW - SURFACES PB - AIP VL - 76 UR - http://link.aip.org/link/?JAP/76/2851/1 KW - Sproul1994 ER - TY - CONF T1 - Investigation on SnS film by RF sputtering for photovoltaic application T2 - 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC) Y1 - 1994 A1 - Wei Guang-Pu A1 - Zhang Zhi-Lin A1 - Zhao Wei-Ming A1 - Gao Xiang-Hong A1 - Chen Wei-Qun A1 - Tanamura, H. A1 - Yamaguchi, M. A1 - Noguchi, H. A1 - Nagatomo, T. A1 - Omoto, O. JA - 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC) PB - IEEE CY - Waikoloa, HI, USA UR - http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=519977 KW - Pu1994 ER - TY - JOUR T1 - Temperature dependence of the optical absorption edge of pyrite FeS 2 thin films JF - Journal of Physics: Condensed Matter Y1 - 1994 A1 - Heras, C de las A1 - Ferrer, I J A1 - Sanchez, C VL - 6 UR - http://stacks.iop.org/0953-8984/6/i=46/a=033?key=crossref.61b976ff921e0c9e9564b77a55dabd35 CP - 46 J1 - J. Phys.: Condens. Matter KW - heras1994 ER - TY - BOOK T1 - {VLSI} Fabrication Principles: Silicon and Gallium Arsenide, 2nd Edition Y1 - 1994 A1 - Ghandhi, Sorab K. PB - Wiley-Interscience SN - 0471580058 KW - Ghandi1994 ER - TY - JOUR T1 - Accurate measurements of the silicon intrinsic carrier density from 78 to 340 K JF - Journal of Applied Physics Y1 - 1993 A1 - Misiakos, Konstantinos A1 - Tsamakis, Dimitris AB - The intrinsic carrier density in silicon has been measured by a novel technique based on low‐frequency capacitance measurements of a p+‐i‐n+ diode biased in high injection. The major advantage of the method is its insensitivity to uncertainties regarding the exact values of the carrier mobilities, the recombination parameters, and the doping density. The intrinsic carrier density was measured in the temperature range from 78 to 340 K. At 300 K the value of ni was found to be (9.7±0.1)×10^9 cm−3. VL - 74 CP - 5 J1 - J. Appl. Phys. KW - Misiakos93 ER - TY - JOUR T1 - Choice of an equivalent black body solar temperature JF - Solar Energy Y1 - 1993 A1 - J.E. Parrott VL - 51 UR - http://www.sciencedirect.com/science/article/B6V50-497TD5S-1HX/2/5b4be52ce15a1f2f2b664fe8bbb37cb6 N1 -
KW - Parrott1993 ER - TY - JOUR T1 - Electronic, optical, and structural properties of some wurtzite crystals JF - Physical Review B Y1 - 1993 A1 - Xu, Yong-Nian A1 - Ching, W. VL - 48 UR - http://link.aps.org/doi/10.1103/PhysRevB.48.4335 CP - 7 J1 - Phys. Rev. B KW - Xu1993 ER - TY - CONF T1 - A New Method for the Accurate Measurements of the Lumped Series Resistance of Solar Cells T2 - Proceedings of the 23rd IEEE Photovoltaic Specialists Conference Y1 - 1993 A1 - Armin G Aberle A1 - Wenham, S.R. A1 - Martin A Green JA - Proceedings of the 23rd IEEE Photovoltaic Specialists Conference CY - Louisville, KY KW - Aberle1993 ER - TY - JOUR T1 - Structure and Composition of Chemically Deposited Thin Films of Bismuth Sulfide and Copper Sulfide Effect on Optical and Electrical Properties JF - Journal of The Electrochemical Society Y1 - 1993 A1 - Nair, P. K. A1 - Nair, M. T. S. A1 - Pathirana, Hema M. K. K. A1 - Zingaro, Ralph A. A1 - Meyers, Edward A. KW - annealing KW - bismuth compounds KW - copper compounds KW - optical properties KW - Thin films AB - Chemically deposited thin films of bismuth sulfide (0.13 μm) and copper sulfide (0.3 μm) and copper sulfide films deposited on bismuth sulfide have been studied so as to obtain information about their structure, composition, thermal stability, and their effect on the optical and electrical properties. The studies establish that bismuth sulfide thin films become crystalline upon air annealing near {200°C} and remain stable up to {300°C.} But oxygen chemisorption reduces the photo‐ and dark conductivities of the films annealed at {300°C.} The studies establish that the copper sulfide films are (covellite), which is stable up to {220°C.} However, films deposited on bismuth sulfide substrate films retain useful electrical and optical properties for annealing temperatures up to {∼300°C.} VL - 140 UR - http://jes.ecsdl.org/content/140/3/754 KW - Nair1993 ER - TY - JOUR T1 - The crystal structures of CuInSe2 and CuInTe2 JF - Materials Research Bulletin Y1 - 1992 A1 - Knight, K.S. VL - 27 UR - http://linkinghub.elsevier.com/retrieve/pii/002554089290209Ihttp://api.elsevier.com/content/article/PII:002554089290209I?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:002554089290209I?httpAccept=text/plain CP - 2 J1 - Materials Research Bulletin KW - Knight2003 ER - TY - JOUR T1 - Lattice vibrations of CuInSe2 and CuGaSe2 by Raman microspectrometry JF - Journal of Applied Physics Y1 - 1992 A1 - Rincón, C. A1 - Ramírez, F. J. AB - The vibrational spectra of the chalcopyrite compounds CuInSe2 and CuGaSe2 have been studied by Raman microspectrometry. This technique is very useful in the present case where large single crystals are not generally available. The results have been used to resolve discrepancies in the reported data on the vibrational spectrum of CuInSe2. VL - 72 UR - 4321-4324 KW - Rincon1992 ER - TY - JOUR T1 - A simple and effective light trapping technique for polycrystalline silicon solar cells JF - Solar Energy Materials and Solar Cells Y1 - 1992 A1 - G. Willeke A1 - H. Nussbaumer A1 - H. Bender A1 - E. Bucher VL - 26 UR - http://www.sciencedirect.com/science/article/B6V51-47XG9S8-45/2/acfac830ed036bd52484e2951d6f9c51 KW - Willeke1992 ER - TY - BOOK T1 - Solar Cells - Operating Principles, Technology and System Application Y1 - 1992 A1 - Martin A Green PB - University of NSW CY - Kensington, Australia N1 -
KW - Green1992 ER - TY - Generic T1 - Buried contact concentrator solar cells T2 - Twenty Second IEEE Photovoltaic Specialists Conference Y1 - 1991 A1 - Wohlgemuth, J.H. A1 - Narayanan, S. JA - Twenty Second IEEE Photovoltaic Specialists Conference VL - 1 N1 -
KW - Wohlgemuth1991 ER - TY - Generic T1 - Decline of the Carrisa Plains PV Power Plant: The Impact of Concentrating Sunlight on Flat Plates T2 - 22nd IEEE Photovoltaic Specialists Conference Y1 - 1991 A1 - Wenger, H.J. A1 - Schaefer, J. A1 - Rosenthal, A. A1 - Hammond, B. A1 - Schlueter, L. JA - 22nd IEEE Photovoltaic Specialists Conference CY - Las Vegas, USA N1 -
KW - Wenger1991 ER - TY - JOUR T1 - Improved value for the silicon intrinsic carrier concentration from 275 to 375 K JF - Journal of Applied Physics Y1 - 1991 A1 - A. B. Sproul A1 - Martin A Green KW - CARRIER DENSITY KW - IV CHARACTERISTIC KW - JUNCTION DIODES KW - MEDIUM TEMPERATURE KW - MINORITY CARRIERS KW - SANDIA LABORATORIES KW - SILICON KW - SILICON DIODES KW - TEMPERATURE DEPENDENCE PB - AIP VL - 70 UR - http://link.aip.org/link/?JAP/70/846/1 N1 -
KW - Sproul1991 ER - TY - JOUR T1 - Improved value for the silicon intrinsic carrier concentration from 275 to 375 K JF - Journal of Applied Physics Y1 - 1991 A1 - A. B. Sproul A1 - Martin A Green VL - 70 N1 -
KW - Sproul1991 ER - TY - Generic T1 - Improvements in Silicon Solar Cell Performance T2 - 22nd IEEE PV Specialists Conference Y1 - 1991 A1 - Zhao, J. A1 - Wang A. A1 - Dai, X. A1 - Martin A Green A1 - Wenham, S.R. JA - 22nd IEEE PV Specialists Conference N1 -
KW - Zhao1991 ER - TY - JOUR T1 - Optical properties of ZnSe JF - Physical Review B Y1 - 1991 A1 - Adachi, Sadao A1 - Taguchi, Tsunemasa VL - 43 UR - https://link.aps.org/doi/10.1103/PhysRevB.43.9569http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.43.9569/fulltexthttp://link.aps.org/article/10.1103/PhysRevB.43.9569 CP - 12 J1 - Phys. Rev. B KW - adachi1991 ER - TY - BOOK T1 - The Role of Photovoltaics in Reducing Greenhouse Gas Emissions Y1 - 1991 A1 - Andrew W Blakers A1 - Martin A Green A1 - T. Leo A1 - H. Outhred A1 - B. Robins PB - Australian Government Publishing Service CY - Canberra N1 -
KW - Blakers1991 ER - TY - Generic T1 - A Sensitivity Analysis of the Spectral Mismatch Correction Procedure Using Wavelength-Dependent Error Sources T2 - 22nd IEEE PV Specialists Conference Y1 - 1991 A1 - King, D. A1 - Hansen, B. JA - 22nd IEEE PV Specialists Conference N1 -
KW - King1991 ER - TY - Generic T1 - 18% efficient polycrystalline silicon solar cells T2 - Twenty First IEEE Photovoltaic Specialists Conference Y1 - 1990 A1 - Narayanan, S. A1 - Zolper, J. A1 - Yun, F. A1 - Wenham, S.R. A1 - A. B. Sproul A1 - Chong,C.M. A1 - Martin A Green JA - Twenty First IEEE Photovoltaic Specialists Conference VL - 1 N1 -
KW - Narayanan1990 ER - TY - JOUR T1 - Improved value for the silicon intrinsic carrier concentration at 300 K JF - Applied Physics Letters Y1 - 1990 A1 - A. B. Sproul A1 - Martin A Green A1 - Zhao, J. VL - 57 N1 -
KW - Sproul1990 ER - TY - JOUR T1 - Minority-carrier transport parameters in n-type silicon JF - IEEE Transactions on Electron Devices Y1 - 1990 A1 - Wang, C.H. A1 - Misiakos, K. A1 - Neugroschel, A. VL - 37 N1 -
KW - Wang1990 ER - TY - JOUR T1 - Modeling daylight availability and irradiance components from direct and global irradiance JF - Solar Energy Y1 - 1990 A1 - Richard Perez A1 - Pierre Ineichen A1 - Robert Seals A1 - Joseph Michalsky A1 - Ronald Stewart VL - 44 UR - http://www.sciencedirect.com/science/article/B6V50-497T9KG-S0/2/034fdf1417cea3a44d8509fe805f679e N1 -
KW - Perez1990 ER - TY - JOUR T1 - Modeling daylight availability and irradiance components from direct and global irradiance JF - Solar Energy Y1 - 1990 A1 - Richard Perez A1 - Pierre Ineichen A1 - Robert Seals A1 - Joseph Michalsky A1 - Ronald Stewart AB -

This paper presents the latest versions of several models developed by the authors to predict short time-step solar energy and daylight availability quantities needed by energy system modelers or building designers. The modeled quantities are global, direct and diffuse daylight illuminance, diffuse irradiance and illuminance impinging on tilted surfaces of arbitrary orientation, sky zenith luminance and sky luminance angular distribution. All models are original except for the last one which is extrapolated from current standards. All models share a common operating structure and a common set of input data: Hourly (or higher frequency) direct (or diffuse) and global irradiance plus surface dew point temperature. Key experimental observations leading to model development are briefly reviewed. Comprehensive validation results are presented. Model accuracy, assessed in terms of root-mean-square and mean bias errors, is analyzed both as a function of insolation conditions and site climatic environment.

VL - 44 UR - http://www.sciencedirect.com/science/article/B6V50-497T9KG-S0/2/034fdf1417cea3a44d8509fe805f679e N1 -
KW - Perez1990 ER - TY - JOUR T1 - Numerical modeling of textured silicon solar cells using PC-1D JF - Electron Devices, IEEE Transactions on Y1 - 1990 A1 - Basore, P.A. KW - elemental semiconductors KW - finite element analysis KW - finite-element program KW - front-surface recombination KW - heavy doping KW - high-level injection KW - internal performance KW - light trapping KW - microcomputer applications KW - modeling semiconductor devices KW - multidimensional effects KW - nonplanar structures KW - numerical models KW - oblique photon path angles KW - PC-1D KW - PC-1D Version 2 KW - personal computers KW - semiconductor device models KW - semiconductors KW - Si KW - SILICON KW - solar cells KW - spectral quantum efficiency data KW - textured solar cells KW - transients AB - PC-1D is a quasi-one-dimensional finite-element program for modeling semiconductor devices on personal computers. The program offers solar cell researchers a convenient user interface with the ability to address complex issues associated with heavy doping, high-level injection, nonplanar structures, and transients. The physical and numerical models used in PC-1D Version 2 that make it possible to approximate the multidimensional effects found in textured crystalline silicon solar cells, including the effects of increased front-surface recombination, oblique photon path angles, and light trapping, are presented. As an example of how the model can be applied, PC-1D is used to investigate the interpretation of spectral quantum efficiency data as a tool for diagnosing the internal performance of textured silicon solar cells VL - 37 KW - basore1990 ER - TY - Generic T1 - Photovoltaics: Coming of Age T2 - 21st IEEE Photovoltaic Specialists Conference Y1 - 1990 A1 - Martin A Green AB - The history of photovoltaic development is reviewed. An outline of the potential of the technology as the author views it is given. The challenge to be met to reach this potential is to develop high-efficiency technologies which can be produced at low cost. Three factors suggest this is possible. The first is the latent efficiency still to be recovered with even the most highly developed cell technologies. The second is the recent progress with tandem cells, which suggests that most of the 30-40% efficiency advantage over single-junction devices will eventually be realized. Tandem cells are likely to offer cost advantages in very high volume production. The third is the pyramid of possibilities, the wide range of semiconductors which still have to be evaluated for their photovoltaic potential. JA - 21st IEEE Photovoltaic Specialists Conference CY - Orlando, USA UR - http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=111582 N1 -
KW - Green1990 ER - TY - JOUR T1 - 16.7% efficient, laser textured, buried contact polycrystalline silicon solar cell JF - Applied Physics Letters Y1 - 1989 A1 - John C. Zolper A1 - Srinivasamohan Narayanan A1 - Stuart R. Wenham A1 - Martin A Green VL - 55 UR - http://apl.aip.org/applab/v55/i22/p2363_s1 KW - Zolper1989 ER - TY - JOUR T1 - Revised optical air mass tables and approximation formula JF - Applied Optics Y1 - 1989 A1 - Fritz Kasten A1 - Andrew T. Young PB - OSA VL - 28 UR - http://ao.osa.org/abstract.cfm?URI=ao-28-22-4735 N1 -
KW - Kasten89 ER - TY - ABST T1 - Buried contact solar cell Y1 - 1988 A1 - Stuart R. Wenham A1 - Martin A Green UR - http://www.freepatentsonline.com/4726850.html N1 -
KW - Wenham1988 ER - TY - JOUR T1 - Electrical and Optical Properties of Stannite-Type Quaternary Semiconductor Thin Films JF - Japanese Journal of Applied Physics Y1 - 1988 A1 - Ito, Kentaro A1 - Nakazawa, Tatsuo VL - 27 UR - http://stacks.iop.org/1347-4065/27/2094 CP - Part 1, No. 11 J1 - Jpn. J. Appl. Phys. KW - ito1998 ER - TY - Generic T1 - SOLAR SIMULATION - PROBLEMS AND SOLUTIONS T2 - 20th IEEE PV Specialists Conference Y1 - 1988 A1 - Emery, K. A1 - Myers, D. A1 - Rummel, S. JA - 20th IEEE PV Specialists Conference N1 -
KW - Emery1988 ER - TY - JOUR T1 - Analysis of the interaction of a laser pulse with a silicon wafer: Determination of bulk lifetime and surface recombination velocity JF - Journal of Applied Physics Y1 - 1987 A1 - Keung L. Luke A1 - Li-Jen Cheng KW - carrier lifetime KW - LASERRADIATION HEATING KW - MINORITY CARRIERS KW - RECOMBINATION KW - SILICON KW - SILICON SOLAR CELLS KW - SURFACE PROPERTIES KW - THEORETICAL DATA KW - VELOCITY KW - WAFERS PB - AIP VL - 61 UR - http://link.aip.org/link/?JAP/61/2282/1 KW - Luke1987 ER - TY - JOUR T1 - Light trapping properties of pyramidally textured surfaces JF - Journal of Applied Physics Y1 - 1987 A1 - Campbell, Patrick A1 - Martin A Green VL - 62 CP - 1 J1 - J. Appl. Phys. KW - Campbell1987 ER - TY - JOUR T1 - Recombination in highly injected silicon JF - Electron Devices, IEEE Transactions on Y1 - 1987 A1 - Sinton, R.A. A1 - Richard M Swanson VL - 34 N1 -
KW - Sinton1987 ER - TY - JOUR T1 - The diode quality factor of solar cells under illumination JF - Journal of Physics D: Applied Physics Y1 - 1986 A1 - Mialhe, P A1 - Charles, J P A1 - Khoury, A A1 - Bordure, G AB - A review of the methods of determination of solar cell quality factors is discussed from a theoretical point of view; experimental results are compared. Temperature effects, light and bias dependencies of the parameters and the models are considered in order to specify the limits of application of each method. VL - 19 UR - https://iopscience.iop.org/article/10.1088/0022-3727/19/3/018http://stacks.iop.org/0022-3727/19/i=3/a=018/pdf CP - 3 J1 - J. Phys. D: Appl. Phys. KW - Mialhe1986 ER - TY - JOUR T1 - Flat-Plate Solar Array Project Final Report Y1 - 1986 A1 - Ross, R.G. Jnr. A1 - Smokler, M.I. PB - Jet Propulsion Laboratory N1 -
KW - Ross1986 ER - TY - JOUR T1 - Simple Solar Spectral Model for Direct and Diffuse Irradiance on Horizontal and Tilted Planes at the Earth's Surface for Cloudless Atmospheres JF - Journal of Climate and Applied Meteorology Y1 - 1986 A1 - Bird, Richard E. A1 - Riordan, Carol VL - 25 UR - http://journals.ametsoc.org/doi/abs/10.1175/1520-0450%281986%29025%3C0087%3ASSSMFD%3E2.0.CO%3B2 CP - 1 J1 - J. Climate Appl. Meteor. KW - Bird1986 ER - TY - JOUR T1 - Calculation of surface generation and recombination velocities at the Si-SiO2 interface JF - Journal of Applied Physics Y1 - 1985 A1 - Eades, Wendell D. A1 - Richard M Swanson VL - 58 N1 -
KW - Eades1985 ER - TY - BOOK T1 - Perception Y1 - 1985 A1 - Sekuler, R. A1 - Blake, R. PB - Alfred A. Knopf Inc CY - New York N1 -
KW - Sekuler1985 ER - TY - BOOK T1 - QED : The Strange Theory of Light and Matter T2 - Princeton University Press, Princeton NJ Y1 - 1985 A1 - Feynman, R. P. JA - Princeton University Press, Princeton NJ N1 -
KW - Feynman1985 ER - TY - JOUR T1 - On the Effect of Impurities on the Photovoltaic Behavior of Solar-Grade Silicon JF - Journal of The Electrochemical Society Y1 - 1984 A1 - Pizzini, S. A1 - Calligarich, C. AB - The electrical and photovoltaic properties of partially compensated p‐type silicon samples have been investigated in order to understand the influence of the contemporaneous presence of donors and acceptors on the behavior of majority and minority carriers. It has been shown that the majority carrier properties are only slightly influenced by the presence of donors in p‐type samples and that the minority carrier properties depend on the excess acceptor concentration up to an excess donor concentration close to Formula . A theoretical explanation of these features has been proposed, on the base of the Shockley‐Read‐Hall model of recombination at shallow traps and donor‐acceptor pairs formation. VL - 131 UR - http://jes.ecsdl.org/cgi/doi/10.1149/1.2116033 CP - 9 J1 - J. Electrochem. Soc. KW - 560 ER - TY - JOUR T1 - Limiting Efficiency of Silicon Solar Cells JF - IEEE TRANSACTIONS ON ELECTRON DEVICES Y1 - 1984 A1 - T. Tiedje A1 - E Yablonovich A1 - G.D. Cody A1 - B.G. Brooks VL - ED-31 N1 -
KW - Tiedje1984 ER - TY - BOOK T1 - Photovoltaics for Residential Applications Y1 - 1984 A1 - SERI PB - Solar Energy Research Institute CY - Golden, Colorado N1 -
KW - seri1984 ER - TY - JOUR T1 - Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon JF - IEEE Transactions on Electron Devices Y1 - 1983 A1 - G. Masetti A1 - M. Severi A1 - S. Solmi KW - arsenic KW - boron KW - CARRIER DENSITY KW - carrier mobility KW - digital simulation KW - elemental semiconductors KW - heavily doped semiconductors KW - phosphorus KW - SILICON AB -

New carrier mobility data for both arsenic- and boron-doped silicon are presented in the high doping range. The data definitely show that the electron mobility in As-doped silicon is significantly lower than in P-doped silicon for carrier concentrations higher than 1019 cm-3. By integrating these data with those previously published, empirical relationships able to model the carrier mobility against carrier concentration in the whole experimental range examined to date (about eight decades in concentration) for As-, P-, and B-doped silicon are derived. Different parameters in the expression for the n-type dopants provide differentiation between the electron mobility in As- and P-doped silicon. Finally, it is shown that these new expressions, once implemented in the {SUPREM} {II} process simulator, lead to reduced errors in the simulation of the sheet resistance values

VL - ED-30 N1 -

Copyright 1983, {IEE}

KW - Masetti1983 ER - TY - JOUR T1 - On Phosphorus Diffusion in Silicon JF - On Phosphorus Diffusion in Silicon Y1 - 1983 A1 - S.M. Hu A1 - P. Fahey A1 - P. Sutton VL - 54 N1 -
KW - Hu1983-2 ER - TY - BOOK T1 - Solar Cells: From Basic to Advanced Systems Y1 - 1983 A1 - Hu, C A1 - White, R.M. PB - McGraw-Hill CY - New York N1 -
KW - Hu1983 ER - TY - CHAP T1 - Voltaic Cell, Chapter XIV Y1 - 1983 A1 - P. Benjamin PB - Wiley CY - New York N1 -
KW - Benjamin1983 ER - TY - JOUR T1 - Accuracy of Analytical Expressions for Solar Cell Fill Factors JF - Solar Cells Y1 - 1982 A1 - Martin A Green VL - 7 N1 -
KW - Green1982 ER - TY - JOUR T1 - Intensity Enhancement in Textured Optical Sheets for Solar Cells JF - IEEE Transactions on Electron Devices Y1 - 1982 A1 - E Yablonovich A1 - G.D. Cody VL - ED-29 N1 -
KW - Yablonovich1982 ER - TY - JOUR T1 - Solar Cells: Operating Principles, Technology and System Applications Y1 - 1982 A1 - Martin A Green AB -
PB - Prentice-Hall SN - 0-85823-580-3 N1 -

1. Solar Cells and Sunlight

2. Review of Semiconductor Properties

3. Generation, Recombination and the Basic Equation of Device Physics

4. p-n Junction Diodes

5. Efficiency Limits, Losses and Measurement

6. Standard Silicon Solar Cell Technology

7. Improved Silicon Cell Technology

8. Design of Silicon Solar Cells

9. Other Device Structures

10. Other Semiconductor Materials

11.Concentrating Systems

12. Photovoltaic Systems: Components and Applications

13. Design of Stand-alone Systems

14. Residential and Centralised Photovoltaic Power Systems

Appendix A: Physical Constants

Appendix B: Selected Properties of Silicon

Appendix C: List of Symbols

KW - Green1982book ER - TY - JOUR T1 - The Standardization of Time: A Sociohistorical Perspective JF - American Journal of Sociology Y1 - 1982 A1 - Zerubavel, Eviatar AB - In order to clarify the fundamental distinction between the psychological and sociological perspectives on temporality, this paper explores the distinctly social process of establishing a standard time-reckoning framework. The paper examines the introduction of Greenwich Mean Time to Britain, the establishment of the American railway time-zone system, and the almost universal enforcement of the modern international standard-time zone system. The rise of standard time is viewed within the context of (a) the establishment of national and international communication networks following the introduction of railway transportation and telegraphic communication (which explains the need to synchronize different communities and countries with one another) and (b) the rise of rationalism (which is responsible for the dissociation of standard time from nature). The paper also examines the various grounds on which standard time has been opposed, as well as the relevance of the time-zone system to the development of modern Western "organic" ties of interdependence and complementary differentiation. VL - 88 UR - https://doi.org/10.1086/227631 KW - Zerubavel ER - TY - ABST T1 - The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon Y1 - 1981 A1 - W R Thurber A1 - Mattis A1 - Liu A1 - Filliben PB - U.S. Department of Commerce National Bureau of Standards N1 -
KW - Thurber1981 ER - TY - JOUR T1 - Solar cell fill factors: General graph and empirical expressions JF - Solid-State Electronics Y1 - 1981 A1 - Martin A Green VL - 24 N1 -
KW - Green1981 ER - TY - Generic T1 - Flat-Plate Photovoltaic Array Design Optimization T2 - 14th IEEE Photovoltaic Specialists Conference Y1 - 1980 A1 - Ross, R.G. JA - 14th IEEE Photovoltaic Specialists Conference CY - San Diego, CA N1 -
KW - Ross1980 ER - TY - JOUR T1 - Resistivity-Dopant Density Relationship for Boron-Doped Silicon JF - Journal of The Electrochemical Society Y1 - 1980 A1 - W R Thurber A1 - R. L. Mattis A1 - Y. M. Liu A1 - J. J. Filliben KW - boron KW - electrical resistivity KW - Hall effect KW - hole density KW - semiconductor doping KW - SILICON PB - ECS VL - 127 UR - http://link.aip.org/link/?JES/127/2291/1 N1 -
KW - Thurber1980boron ER - TY - JOUR T1 - Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon JF - Journal of The Electrochemical Society Y1 - 1980 A1 - W R Thurber A1 - R. L. Mattis A1 - Y. M. Liu A1 - J. J. Filliben KW - density KW - electrical resistivity KW - electron mobility KW - Hall effect KW - neutron activation analysis KW - phosphorus KW - photometry KW - semiconductor doping KW - SILICON PB - ECS VL - 127 UR - http://link.aip.org/link/?JES/127/1807/1 KW - Thurber1980phos ER - TY - CHAP T1 - Solar Energy Utilisation Y1 - 1980 A1 - G.D. Rai PB - Khanna Publishers N1 -
KW - Rai1980 ER - TY - JOUR T1 - Application of the superposition principle to solar-cell analysis JF - IEEE Transactions on Electron Devices Y1 - 1979 A1 - F.A. Lindholm A1 - Fossum, J.G. A1 - E.L. Burgess AB - The principle of superposition is used to derive from fundamentals the widely used shifting approximation that the current-voltage characteristic of an illuminated solar cell is the dark current-voltage characteristic shifted by the short-circuit photocurrent. Thus the derivation requires the linearity of the boundary-value problems that underlie the electrical characteristics. This focus on linearity defines the conditions that must hold if the shifting approximation is to apply with good accuracy. In this regard, if considerable photocurrent and considerable dark thermal recombination current both occur within the junction space-charge region, then the shifting approximation is invalid. From a rigorous standpoint, it is invalid also if low-injection concentrations of holes and electrons are not maintained throughout the quasi-neutral regions. The presence of sizable series resistance also invalidates the shifting approximation. Methods of analysis are presented to treat these cases for which shifting is not strictly valid. These methods are based on an understanding of the physics of cell operation. This understanding is supported by laboratory experiments and by exact computer solution of the relevant boundary-value problems. For the case of high injection in the base region, the method of analysis employed accurately yields the dependence of the open-circuit voltage on the short-circuit current (or the illumination level). VL - 26 KW - Lindholm1979 ER - TY - JOUR T1 - Electrical Properties of p- and n-Type CuInSe 2 Single Crystals JF - Japanese Journal of Applied Physics Y1 - 1979 A1 - Irie, Taizo A1 - Endo, Saburo A1 - Kimura, Shigeo VL - 18 UR - http://jjap.jsap.jp/link?JJAP/18/1303/ CP - 7 J1 - Jpn. J. Appl. Phys. KW - Irie1979 ER - TY - JOUR T1 - Hall coefficient and reflectivity evidence that TiS 2 is a semiconductor JF - Journal of Physics C: Solid State Physics Y1 - 1979 A1 - E M Logothetis A1 - W J Kaiser A1 - C A Kukkonen A1 - S P Faile A1 - R Colella A1 - J Gambold AB - A series of measurements of the Hall coefficient, infrared reflectivity, thermoelectric power and electrical resistivity of Ti 1+x S 2 single crystals with various degrees of stoichiometry is described, where, for the first time, each measurement was made on the same crystal (or crystals from the same batch). None of these measurements taken alone can distinguish between the semimetallic or semiconducting models of TiS 2 . However, by making all four measurements on each sample, it has been possible to establish correlations between the results for different samples. It was found that the product of the Hall coefficient and the square of the plasma frequency is the same for all samples, a result that is consistent with a semiconductor model, but is inconsistent with a semimetal. Nevertheless the most stoichiometric samples remain metallic with electron concentrations of 2*10 20 cm -3 . It was also found that the resistivity data cannot be explained by carrier-carrier or optical phonon scattering. Therefore, both the source of the residual conduction electrons and the scattering mechanism in TiS 2 remain unknown. VL - 12 UR - http://stacks.iop.org/0022-3719/12/i=13/a=007 KW - Logothetis1979 ER - TY - JOUR T1 - Hall coefficient and reflectivity evidence that TiS 2 is a semiconductor JF - Journal of Physics C: Solid State Physics Y1 - 1979 A1 - Logothetis, E M A1 - W J Kaiser A1 - Kukkonen, C A A1 - S P Faile A1 - Colella, R A1 - J Gambold VL - 12 UR - http://stacks.iop.org/0022-3719/12/i=13/a=007?key=crossref.7b34e84721f0d96f60dce7c3e44ba4c7 CP - 13 J1 - J. Phys. C: Solid State Phys. KW - Logothetis1979a ER - TY - JOUR T1 - Solar Power for Telecommunications JF - The Telecommunication Journal of Australia Y1 - 1979 A1 - Mack, M. VL - 29 N1 -
KW - Mack1979 ER - TY - ABST T1 - United States Patent: 4137123 - Texture etching of silicon: method Y1 - 1979 A1 - William L. Bailey A1 - Michael G. Coleman A1 - Cynthia B. Harris A1 - Israel A. Lesk AB -

A surface etchant for silicon comprising an anisotropic etchant containing silicon is disclosed. The etchant provides a textured surface of randomly spaced and sized pyramids on a silicon surface. It is particularly useful in reducing the reflectivity of solar cell surfaces.

UR - http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=32&f=G&l=50&co1=AND&d=PTXT&s1=4,137,123&OS=4,137,123&RS=4,137,123 KW - Bailey1979 ER - TY - JOUR T1 - Electrical properties of α-MnS JF - Journal of Physics and Chemistry of Solids Y1 - 1978 A1 - Heikens, H.H. A1 - Van Bruggen, C.F. A1 - Haas, C. AB - Electrical data including thermoelectric power, Hall effect and resistivity on iodine-grown crystals of p-type α-MnS are reported. A study of the temperature dependences reveals that the conductivity occurs by holes in a 3d-band (Mn3+) and that the mobility of the holes is not thermally activated. Photoelectron spectra confirm the 3d character of the top of the valence band. Accurate analysis of the electrical data gives a satisfactory explanation of the extrinsic and intrinsic behaviour; the simultaneous presence of donors (substitutional iodine) and acceptors (manganese vacancies) is responsible for the observed phenomena. VL - 39 UR - http://linkinghub.elsevier.com/retrieve/pii/0022369778901415 CP - 8 J1 - Journal of Physics and Chemistry of Solids KW - Heikens1978 ER - TY - Generic T1 - Optimizing Solar Cell Performance by Simultaneous Consideration of Grid Pattern Design and Interconnect Configurations T2 - 13th IEEE Photovoltaic Specialists Conference Y1 - 1978 A1 - H.B. Serreze JA - 13th IEEE Photovoltaic Specialists Conference CY - Washington, D.C., USA N1 -
KW - Serreze1978 ER - TY - JOUR T1 - Electronic processes at grain boundaries in polycrystalline semiconductors under optical illumination JF - IEEE Transactions on Electron Devices Y1 - 1977 A1 - Card, H.C. A1 - Yang, E.S. VL - ED-24 N1 -
KW - Card1977 ER - TY - JOUR T1 - Physical operation of back-surface-field silicon solar cells JF - IEEE Transactions on Electron Devices Y1 - 1977 A1 - Fossum, J.G. AB -

Using exact numerical solutions of carrier transport in the back-surface-field silicon solar cell both for guidance and for verification, the physical mechanisms effective in this device are identified and explained. Concise analytical descriptions of the cell performance, based on the pertinent device physics, are formulated.

VL - 24 KW - Fossum1977 ER - TY - BOOK T1 - Applied Solar Energy Y1 - 1976 A1 - Meinel, A.B. A1 - Meinel, M.P. PB - Addison Wesley Publishing Co. N1 -
KW - Meinel1976 ER - TY - JOUR T1 - The electrical properties of zinc selenide JF - Journal of Physics D: Applied Physics Y1 - 1976 A1 - Jones, G A1 - Woods, J VL - 9 UR - http://stacks.iop.org/0022-3727/9/i=5/a=013?key=crossref.d0fe6103237fcfbfd2221126652bc33b CP - 5 J1 - J. Phys. D: Appl. Phys. KW - jones1976 ER - TY - Generic T1 - Historical Development of Solar Cells Y1 - 1976 A1 - M. Wolf PB - IEEE Press N1 -
KW - Wolf1976 ER - TY - BOOK T1 - Solar Cells Y1 - 1976 A1 - C.E. Backus AB -

The present volume constitutes a reference book containing classic papers in the field of solar cells as well as a relatively complete photovoltaic bibliography. The general subjects include the historical development of solar cells, solar-cell theory, cell fabrication, space systems, terrestrial applications, and working-group resumes and discussions. Individual papers deal with such topics as silicon p-n junction photocells, effects of temperature on photovoltaic solar-energy conversion, series resistance effects on solar-cell measurements, drift fields in photovoltaic solar-energy-converter cells, the violet cell, the photovoltaic effect in CdS, efficiency calculations of heterojunction solar-energy converters, CdTe solar cells and photovoltaic heterojunctions in II-VI compounds, the photovoltaic effect in GaAs p-n junctions, and the multiple-junction edge-illuminated solar cell. Other papers discuss silicon solar cell degradation in the space environment, direct solar-energy conversion for terrestrial use, single-crystal and polycrystalline silicon, and CdS/Cu2S thin-film cells

PB - IEEE CY - New York N1 -
KW - Backus1976 ER - TY - JOUR T1 - Solar thermal power system based on optical transmission JF - Solar Energy Y1 - 1976 A1 - L.L. Vant-Hull A1 - A.F. Hildebrandt VL - 18 UR - http://www.sciencedirect.com/science/article/B6V50-497SCJS-2H/2/78dfffb8fca290387fb2596f89696498 N1 -
KW - VantHull1976 ER - TY - JOUR T1 - Bi2S3 as a high Z material for γ-ray detectors JF - IEEE Transactions on Nuclear Science Y1 - 1975 A1 - Wald, F. V. A1 - Bullitt, J. A1 - Bell, R. O. VL - 22 UR - http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=4327646 CP - 1 J1 - IEEE Trans. Nucl. Sci. KW - Wald1975 ER - TY - JOUR T1 - Intercalation and lattice expansion in titanium disulfide JF - The Journal of Chemical Physics Y1 - 1975 A1 - Stanley M Whittingham A1 - Arthur H Thompson AB - The temperature coefficient of expansion has been measured for the a and c axes of titanium disulfide, and of its intercalates with a metal, lithium, and an organic base, s−collidine. The anisotropy in the expansion coefficients is related to the bonding in the structure. VL - 62 UR - http://link.aip.org/link/?JCP/62/1588/1&Agg=doi CP - 4 J1 - J. Chem. Phys. KW - Whittingham1975 ER - TY - JOUR T1 - CuInSe2/CdS heterojunction photovoltaic detectors JF - Applied Physics Letters Y1 - 1974 A1 - Wagner, Sigurd A1 - Shay, JL A1 - Migliorato, P A1 - Kasper, HM VL - 25 KW - wagner1974cuinse2 ER - TY - JOUR T1 - Minority carrier MIS tunnel diodes and their application to electron- and photo-voltaic energy conversion—I. Theory JF - Solid-State Electronics Y1 - 1974 A1 - Green, M.A. A1 - King, F.D. A1 - Shewchun, J. AB - If the insulating layer in a metal-insulator-semiconductor (MIS) diode is very thin (<60 Å for AlSiO2Si), measureable tunnel current can flow between the metal and the semiconductor. If the insulating layer is even thinner (<30 Å), tunnel currents are so large that they can significantly disturb the semiconductor from thermal equilibrium. Under such conditions, MIS diodes exhibit properties determined by which of the following tunneling processes is dominant; tunneling between the metal and the majority carrier energy band in the semiconductor, between the metal and the minority carrier energy band, or between the metal abd surface state levels. In the present paper, minority carrier MIS tunnel diodes are analysed using a very general formulation of the tunneling processes through the insulator, transport properties in the semiconductor, and surface state effects. Starting from solutions for diodes with relatively thick insulating layers where the semiconductor is essentially in thermal equilibrium, solutions are obtained for progressively thinner insulating layers until non-equilibrium effects in the semiconductor are observed. It is shown that such minority carrier MIS tunnel diodes with very thin insulating layers possess properties similar to p-n junction diodes including exponential current-voltage characteristics which approach the “ideal diode” law of p-n junction theory. The theory adequately describes the observed properties of experimental devices reported in a companion paper. The diodes have application as injecting contacts, as photodiodes or elements of photodiode arrays, and as energy conversion devices employing the electron- or photo-voltaic effects. VL - 17 UR - http://linkinghub.elsevier.com/retrieve/pii/0038110174901725http://api.elsevier.com/content/article/PII:0038110174901725?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:0038110174901725?httpAccept=text/plain CP - 6 J1 - Solid-State Electronics KW - Green1974 ER - TY - Generic T1 - Optimum Design of Anti-reflection coating for silicon solar cells T2 - 10th IEEE Photovoltaic Specialists Conference Y1 - 1973 A1 - E.Y. Wang A1 - F.T.S. Yu A1 - V.L. Sims A1 - E.W. Brandhorst A1 - J.D. Broder JA - 10th IEEE Photovoltaic Specialists Conference N1 -
KW - Wang1973 ER - TY - JOUR T1 - Optical Properties of Substitutional Donors in ZnSe JF - Physical Review B Y1 - 1972 A1 - Merz, J. L. A1 - Kukimoto, H. A1 - Nassau, K. A1 - Shiever, J. W. VL - 6 UR - https://link.aps.org/doi/10.1103/PhysRevB.6.545http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.6.545/fulltexthttp://link.aps.org/article/10.1103/PhysRevB.6.545 CP - 2 J1 - Phys. Rev. B KW - merz1972 ER - TY - JOUR T1 - High Electron Mobility in Zinc Selenide Through Low-Temperature Annealing JF - Journal of Applied Physics Y1 - 1971 A1 - Aven, M. AB - Electron mobility in ZnSe has been measured between 40° and 400°K. It is shown that through repeated annealing in liquid Zn the mobility maximum can be increased to 12 000 cm2∕V sec. This is one of the highest mobilities measured for semiconductors with band gaps as wide as that of ZnSe (2.7 eV). The increase in mobility is mainly due to elimination of doubly charged acceptor states. The residual scattering is believed to be due, in part, to charged isolated impurities and, in part, to paired impurity dipoles. VL - 42 CP - 3 J1 - J. Appl. Phys. KW - 531 ER - TY - JOUR T1 - The measurement of solar spectral irradiance at different terrestrial elevations JF - Solar Energy Y1 - 1970 A1 - E.G. Laue VL - 13 UR - http://www.sciencedirect.com/science/article/B6V50-497T7KC-T/2/c932c2f01c2de3c36c0f461c991f791a N1 -
KW - Laue1970 ER - TY - JOUR T1 - The absorption of radiation in solar stills JF - Solar Energy Y1 - 1969 A1 - P.I. Cooper VL - 12 UR - http://www.sciencedirect.com/science/article/B6V50-497BD6C-27/2/a4ca2069fe8c8b0cfa571de016d93cc5 N1 -
KW - Cooper1969 ER - TY - JOUR T1 - Shallow phosphorus diffusion profiles in silicon JF - Proceedings of the IEEE Y1 - 1969 A1 - Tsai, J.C.C. VL - 57 UR - http://ieeexplore.ieee.org/document/1449255/http://xplorestaging.ieee.org/ielx5/5/31124/01449255.pdf?arnumber=1449255 CP - 9 J1 - Proc. IEEE KW - Tsai1969 ER - TY - JOUR T1 - Electrical properties of the Group IV disulfides, titanium disulfide, zirconium disulfide, hafnium disulfide and tin disulfide JF - Inorganic Chemistry Y1 - 1968 A1 - Conroy, Lawrence E. A1 - Park, Kyu Chang VL - 7 UR - http://pubs.acs.org/doi/abs/10.1021/ic50061a015 CP - 3 J1 - Inorg. Chem. KW - Conroy1968 ER - TY - JOUR T1 - Electroreflectance Measurements on Mg2Si, Mg2Ge, and Mg2Sn JF - Physical Review Y1 - 1968 A1 - Vazquez, F. A1 - Forman, Richard A1 - Cardona, Manuel VL - 176 UR - http://link.aps.org/doi/10.1103/PhysRev.176.905 CP - 3 J1 - Phys. Rev. KW - Vazquez1968 ER - TY - JOUR T1 - On the Properties of alpha-MnS and MnS2. JF - Acta Chemica Scandinavica Y1 - 1965 A1 - Furuseth, Sigrid A1 - Kjekshus, Arne A1 - Niklasson, Rune J. V. A1 - Brunvoll, J. A1 - Hinton, Merv VL - 19 UR - http://actachemscand.org/doi/10.3891/acta.chem.scand.19-1405 J1 - Acta Chem. Scand. KW - Furuseth1965 ER - TY - JOUR T1 - Nondestructive determination of thickness and refractive index of transparent films JF - IBM Journal of Research Devices Y1 - 1964 A1 - W. A. Pliskin A1 - E. E. Conrad AB -

A simple nondestructive method of measuring the refractive index and thickness of transparent films on reflective substrates has been developed. The technique involves the use of a microscope equipped with a monochromatic filter on the objective and a stage that can be rotated so that the reflected light is observed at various angles. The film thickness, d, is given by d = {[ΔNλ]/[2µ(cos} r2, - cos r1)], where λ is the wavelength of the filtered light, µ is the refractive index, and {ΔN} is the number of fringes observed between the angles of refraction r2, and r1.

VL - 8 UR - http://portal.acm.org/citation.cfm?id=1662391 N1 -
KW - Pliskin1964 ER - TY - BOOK T1 - Crystal Structures 1 T2 - Crystal Structures Y1 - 1963 A1 - Ralph W G Wyckoff JA - Crystal Structures PB - Interscience Publishers CY - New York, New York VL - 1 UR - http://rruff.geo.arizona.edu/AMS/AMC_text_files/13434_amc.txt KW - Wyckoff1963 ER - TY - JOUR T1 - Elastic Constants of Pyrite JF - Journal of Applied Physics Y1 - 1963 A1 - Simmons, Gene A1 - Birch, Francis VL - 34 UR - http://aip.scitation.org/doi/10.1063/1.1729801http://aip.scitation.org/doi/pdf/10.1063/1.1729801 CP - 9 J1 - Journal of Applied Physics KW - simmons1963 ER - TY - JOUR T1 - Series Resistance Effects on Solar Cell Measurements JF - Advanced Energy Conversion Y1 - 1963 A1 - M. Wolf A1 - H. Rauschenbach VL - 3 KW - Wolf1963 ER - TY - JOUR T1 - Detailed Balance Limit of Efficiency of p-n Junction Solar Cells JF - Journal of Applied Physics Y1 - 1961 A1 - William Shockley A1 - Hans J. Queisser PB - AIP VL - 32 UR - http://link.aip.org/link/?JAP/32/510/1 KW - Shockley1961 ER - TY - JOUR T1 - KNOOP HARDNESS NUMBERS FOR 127 OPAQUE MINERALS JF - Geological Society of America Bulletin Y1 - 1961 A1 - ROBERTSON, FORBES VL - 72 UR - https://pubs.geoscienceworld.org/gsabulletin/article/72/4/621-637/5310http://bulletin.geoscienceworld.org/cgi/doi/10.1130/0016-7606(1961)72%5B621:KHNFOM%5D2.0.CO;2 CP - 4 J1 - Geol Soc America Bull KW - robertson1961 ER - TY - CONF T1 - High efficiency silicon solar cells T2 - Proceedings of the 14th Annual Power Sources Conference Y1 - 1960 A1 - B. Dale A1 - H.G. Rudenberg JA - Proceedings of the 14th Annual Power Sources Conference PB - U.S. Army Signal Research and Development Lab N1 -
KW - Dale1960 ER - TY - CHAP T1 - Semiconductor Devices, Chapter 8 Y1 - 1959 A1 - J.N. Shive PB - Van Nostrand CY - New Jersey N1 -
KW - Shive1959 ER - TY - JOUR T1 - Measurement of sheet resistivities with the four-point probe JF - Bell System Technical Journal Y1 - 1958 A1 - F.M. Smits VL - 34 N1 -
KW - Smits1958 ER - TY - JOUR T1 - Photoconductivity of Zinc Selenide Crystals and a Correlation of Donor and Acceptor Levels in II-VI Photoconductors JF - Phys. Rev. Y1 - 1958 A1 - Bube, Richard H. A1 - Lind, Edward L. AB - Photosensitive crystals of zinc selenide have been prepared by incorporating suitable proportions of Group VII donors (e.g., bromine) and either Group I acceptors (copper or silver) or Group V acceptors (antimony or arsenic) in crystals prepared from the vapor phase. Photoconductivity phenomena characteristic of other II-VI photoconductors, such as (a) variation of photocurrent with a power of light intensity greater than unity, (b) temperature quenching of photoconductivity, and (c) infrared quenching of photoconductivity, are also found for zinc selenide. Sensitizing centers in ZnSe: Br: Cu and ZnSe: Br: Ag have levels lying at the same distance above the top of the valence band (0.6 ev) as sensitizing centers in CdSe, even though the band gap of ZnSe is 50% larger than that of CdSe. Crystals with Group V acceptors are characterized in addition by a long-wavelength spectral response, out to 1.4 microns, associated with levels lying about 1.3 ev above the top of the valence band. By a consideration of known data on the conductivity, photoconductivity, and luminescence of II-VI compounds, a consistent correlation of donor and acceptor levels in these materials is possible. VL - 110 UR - http://link.aps.org/doi/10.1103/PhysRev.110.1040 KW - Bube1958 ER - TY - JOUR T1 - Conversion of Solar to Electrical Energy JF - American Journal of Physics Y1 - 1957 A1 - Pearson, G. L. AB - A photovoltaic device has been developed which converts solar radiation directly into electrical energy with an over-all efficiency of 11%. This consists of a p-n junction formed by gaseous diffusion near the front surface of a silicon plate. In full sunlight a single cell furnishes approximately 30 ma of short circuit current per square centimeter of surface, 0.6 v of open circuit voltage, and 12 mw of power into a matched load per square centimeter of surface. Like other electric batteries, individual cells may be connected in series or parallel to obtain an increase in terminal voltage or current. The spectral response is a maximum near 0.7 µ, and the long wavelength cutoff is at approximately 1.1 µ. The efficiency of this new siliconp-n junctionphotovoltaic cell is greater by a factor of 20 than that previously reported for other types of photocells and makes the conversion of the sun's energy directly into electricity possible for a number of interesting applications. A Bell System field trial at Americus, Georgia, in which solar batteries are used to power a rural carrier telephone communication system, is described. A number of other possible applications for this new solar energy converter are discussed. VL - 25 UR - http://link.aip.org/link/?AJP/25/591/1&Agg=doi CP - 9 J1 - Am. J. Phys. KW - 567 ER - TY - ABST T1 - Bell Laboratories Record Y1 - 1955 KW - Bell1955 ER - TY - JOUR T1 - A New Silicon P-N Junction Photocell for Converting Solar Radiation into Electrical Power JF - Journal of Applied Physics Y1 - 1954 A1 - Chapin, D.M. A1 - Fuller, C.S. A1 - Pearson, G.L. VL - 25 N1 -
KW - Chapin1954 ER - TY - JOUR T1 - Electron-Hole Recombination in Germanium JF - Phys. Rev. Y1 - 1952 A1 - Hall, R. N. PB - American Physical Society VL - 87 N1 -
KW - Hall1952 ER - TY - JOUR T1 - Photoelectric Properties of Tonically Bombarded Silicon JF - Bell Systems Technical Journal Y1 - 1952 A1 - Kingsbury, E.F. A1 - Ohl, R.S. VL - 31 N1 -
KW - Kingsbury1952 ER - TY - JOUR T1 - Statistics of the Recombinations of Holes and Electrons JF - Physical Review Y1 - 1952 A1 - William Shockley A1 - W. T. Read AB - The statistics of the recombination of holes and electrons in semiconductors is analyzed on the basis of a model in which the recombination occurs through the mechanism of trapping. A trap is assumed to have an energy level in the energy gap so that its charge may have either of two values differing by one electronic charge. The dependence of lifetime of injected carriers upon initial conductivity and upon injected carrier density is discussed. VL - 87 UR - http://link.aps.org/doi/10.1103/PhysRev.87.835 KW - Shockley1952 ER - TY - JOUR T1 - Zone-refining JF - Trans. AIME, Y1 - 1952 A1 - W. G. Pfann VL - 194 N1 -
KW - Pfann1952 ER - TY - BOOK T1 - Electrons and holes in semiconductors with applications to transistor electronics Y1 - 1950 A1 - William Shockley PB - van Nostrand CY - New York KW - shockley1950 ER - TY - JOUR T1 - The theory of p-n Junctions in semiconductors and p-n junction transistors JF - Bell System Technical Journal Y1 - 1949 A1 - Shockley, W. AB - In a single crystal of semiconductor the impurity concentration may vary from p-type to n-type producing a mechanically continuous rectifying junction. The theory of potential distribution and rectification for p-n junctions is developed with emphasis on germanium. The currents across the junction are carried by the diffusion of holes in n-type material and electrons in p-type material, resulting in an admittance for a simple case varying as (1 + iωτ p ) 1/2 where τ p is the lifetime of a hole in the n-region. Contact potentials across p-n junctions, carrying no current, may develop when hole or electron injection occurs. The principles and theory of a p-n-p transistor are described. VL - 28 UR - http://doi.wiley.com/10.1002/bltj.1949.28.issue-3https://ieeexplore.ieee.org/document/6773080 CP - 3 KW - Shockley1949 ER - TY - JOUR T1 - Light-Sensitive Electric Device JF - U.S. Patent Y1 - 1941 A1 - Ohl, R.S. VL - 2 N1 -
KW - Ohl1941 ER - TY - JOUR T1 - A Thallous Sulphide Photo EMF Cell JF - Journal Opt. Society of America Y1 - 1939 A1 - Nix, F.C. A1 - Treptwo, A.W. VL - 29 N1 -
KW - Nix1939 ER - TY - JOUR T1 - Absolutwerte der optischen Absorptionskonstanten von Alkalihalogenidkristallen im Gebiet ihrer ultravioletten Eigenfrequenzen JF - Annalen der Physik Y1 - 1934 A1 - Bauer, Gerhard VL - 411 CP - 4 J1 - Ann. Phys. KW - Bauer1934 ER - TY - JOUR T1 - The Copper-Cuprous-Oxide Rectifier and Photoelectric Cell JF - Review of Modern Physics Y1 - 1933 A1 - Grondahl, L.O. VL - 5 N1 -
KW - Grondahl1933 ER - TY - JOUR T1 - Uber eine neue Selen- Sperrschicht Photozelle JF - Physikalische Zeitschrift Y1 - 1931 A1 - Bergmann, L. VL - 32 N1 -
KW - Bergmann1931 ER - TY - JOUR T1 - Sur les rayons β secondaires produits dans un gaz par des rayons X JF - C.R.A.S. Y1 - 1923 A1 - P. Auger VL - 177 N1 -
KW - Auger1923 ER - TY - JOUR T1 - Note on the Equation, of Time JF - The Mathematical Gazette Y1 - 1921 A1 - Milne, R. M. VL - 10 UR - https://www.cambridge.org/core/product/identifier/S0025557200232944/type/journal_articlehttps://www.cambridge.org/core/services/aop-cambridge-core/content/view/S0025557200232944 CP - 155 J1 - Math. Gaz. KW - Milne1921 ER - TY - JOUR T1 - Ein neues Verfahren zur Messung der Kristallisationsgeschwindigheit der Metalle JF - Zeitschrift für physikalische Chemie Y1 - 1918 A1 - Czochralski, J. VL - 92 KW - Czochralski1918 ER - TY - JOUR T1 - Generation and transformation of light JF - Annalen der Physik Y1 - 1905 A1 - A. Einstein KW - Einstein1905 VL - 17 N1 -
KW - Einstein1905 ER - TY - JOUR T1 - Distribution of energy in the spectrum JF - Annalen der Physik Y1 - 1901 A1 - M. Planck VL - 4 N1 -
KW - Planck1901 ER - TY - JOUR T1 - Distribution of energy in the normal spectrum JF - Verhandlungen der Deutschen Physikalischen Gesellschaft Y1 - 1900 A1 - M. Planck VL - 2 N1 -
KW - Planck1900 ER - TY - JOUR T1 - On a New Form of Selenium Photocell JF - American J. of Science Y1 - 1883 A1 - Fritts, C.E. VL - 26 N1 -
KW - Fritts1883 ER - TY - JOUR T1 - The Action of Light on Selenium JF - Proceedings of the Royal Society, London Y1 - 1877 A1 - Adams, W.G. A1 - Day, R.E. VL - A25 N1 -
KW - Adams1877 ER - TY - JOUR T1 - On Conductance in Metal Sulphides JF - Ann. d. Physik Y1 - 1874 A1 - Braun, F. VL - 153 N1 -
KW - Braun1874 ER - TY - JOUR T1 - Memoire sur les effects d´electriques produits sous l´influence des rayons solaires JF - Annalen der Physick und Chemie Y1 - 1841 A1 - Becquerel, A.E. VL - 54 N1 -
KW - Becquerel1841 ER - TY - JOUR T1 - Recherches sur les effets de la radiation chimique de la lumiere solaire au moyen des courants electriques JF - Comptes Rendus de L´Academie des Sciences Y1 - 1839 A1 - Becquerel, A.E. VL - 9 N1 -
KW - Becquerel1839 ER - TY - Generic T1 - TITANIUM(IV) SULFIDE CAS No. 12039-13-3 Y1 - 0 UR - http://www.chemicalbook.com/ChemicalProductProperty_EN_CB2240473.htm KW - TiS ER -