TY - Generic
T1 - The Astronomical Almanac
Y1 - 2020
A1 - U. S. Naval Observatory
UR - http://asa.hmnao.com/
KW - Almanac
ER -
TY - JOUR
T1 - Cd-Free Cu(In,Ga)(Se,S)2 Thin-Film Solar Cell With Record Efficiency of 23.35%
JF - IEEE Journal of Photovoltaics
Y1 - 2019
A1 - M. Nakamura
A1 - K. Yamaguchi
A1 - Y. Kimoto
A1 - Y. Yasaki
A1 - T. Kato
A1 - H. Sugimoto
VL - 9
UR - https://ieeexplore-ieee-org.udel.idm.oclc.org/document/8825469/authors#authors
KW - Nakamura2019Cdfree
ER -
TY - JOUR
T1 - Analysis of the recombination mechanisms of a silicon solar cell with low bandgap-voltage offset
JF - Journal of Applied Physics
Y1 - 2017
A1 - Augusto, André
A1 - Herasimenka, Stanislau Y.
A1 - King, Richard R.
A1 - Bowden, Stuart G.
A1 - Honsberg, Christiana
VL - 121
UR - http://aip.scitation.org/doi/10.1063/1.4984071http://aip.scitation.org/doi/pdf/10.1063/1.4984071http://aip.scitation.org/doi/pdf/10.1063/1.4984071http://aip.scitation.org/doi/am-pdf/10.1063/1.4984071
CP - 20
J1 - Journal of Applied Physics
KW - Augusto2017
ER -
TY - JOUR
T1 - Progress in thin film CIGS photovoltaics–Research and development, manufacturing, and applications
JF - Progress in Photovoltaics: Research and Applications
Y1 - 2017
A1 - Feurer, Thomas
A1 - Reinhard, Patrick
A1 - Avancini, Enrico
A1 - Bissig, Benjamin
A1 - Löckinger, Johannes
A1 - Fuchs, Peter
A1 - Carron, Romain
A1 - Weiss, Thomas Paul
A1 - Perrenoud, Julian
A1 - Stutterheim, Stephan
A1 - Buecheler, Stephan
A1 - Tiwari, Ayodhya N.
VL - 25
KW - feurer2017progress
ER -
TY - JOUR
T1 - Effects of heavy alkali elements in Cu (In, Ga) Se2 solar cells with efficiencies up to 22.6%
JF - physica status solidi (RRL)–Rapid Research Letters
Y1 - 2016
A1 - Jackson, Philip
A1 - Wuerz, Roland
A1 - Hariskos, Dimitrios
A1 - Lotter, Erwin
A1 - Witte, Wolfram
A1 - Powalla, Michael
VL - 10
KW - jackson2016effects
ER -
TY - JOUR
T1 - Generalized quantum efficiency analysis for non-ideal solar cells: Case of Cu 2 ZnSnSe 4
JF - Journal of Applied Physics
Y1 - 2016
A1 - Charles J. Hages
A1 - Carter, Nathaniel J.
A1 - Rakesh Agrawal
VL - 119
UR - http://aip.scitation.org/doi/10.1063/1.4939487http://aip.scitation.org/doi/pdf/10.1063/1.4939487
CP - 1
J1 - Journal of Applied Physics
KW - Hages2016
ER -
TY - JOUR
T1 - Optoelectronic and material properties of nanocrystal-based \{CZTSe\} absorbers with Ag-alloying
JF - Solar Energy Materials and Solar Cells
Y1 - 2016
A1 - Charles J. Hages
A1 - Mark J. Koeper
A1 - Rakesh Agrawal
KW - Characterization
AB - Abstract In this work, the benefits of Ag-alloying in kesterite solar cells are explored in terms of tunable band gap, improved grain growth, improved minority carrier lifetime, reduced defect formation, and reduced potential fluctuations for (Ag,Cu)2ZnSnSe4 (ACZTSe) absorbers relative to Cu2ZnSnSe4 (CZTSe). The enhanced optoelectronic properties are shown to scale here with the degree of Ag-alloying in ACZTSe. The impacts of these effects on device performance are discussed, with improvement in average device performance/open-circuit voltage reported for \{ACZTSe\} (5%-Ag) absorbers relative to \{CZTSe\} absorbers with similar band gap. These initial results are promising for the Ag-alloyed \{ACZTSe\} material system as \{VOC\} limitations are the primary cause of poor device performance in kesterite solar cells, and cation substitution presents a unique method to tune the defect properties of kesterite absorbers. Herein, nanoparticle synthesis and large-grain \{ACZTSe\} absorber formation is described followed by material and optoelectronic characterization. Additionally, \{RTP\} processing is presented to achieve fully selenized large-grain chalcogenide absorbers from sulfide nanocrystal inks.
VL - 145, Part 3
UR - http://www.sciencedirect.com/science/article/pii/S0927024815005504
KW - Hages2016opto
ER -
TY - JOUR
T1 - Over 9% Efficient Kesterite Cu 2 ZnSnS 4 Solar Cell Fabricated by Using Zn 1- x Cd x S Buffer Layer
JF - Advanced Energy Materials
Y1 - 2016
A1 - Sun, Kaiwen
A1 - Yan, Chang
A1 - Liu, Fangyang
A1 - Huang, Jialiang
A1 - Zhou, Fangzhou
A1 - Stride, John A.
A1 - Martin A Green
A1 - Hao, Xiaojing
VL - 6
UR - http://doi.wiley.com/10.1002/aenm.201600046https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Faenm.201600046
CP - 12
J1 - Adv. Energy Mater.
KW - Sun2016
ER -
TY - ABST
T1 - Test Method for Determination of the Spectral Mismatch Parameter Between a Photovoltaic Device and a Photovoltaic Reference Cell
Y1 - 2016
UR - http://www.astm.org/cgi-bin/resolver.cgi?E973-16
KW - ASTM2016
ER -
TY - JOUR
T1 - Trigonal Cu 2 -II-Sn-VI 4 (II = Ba, Sr and VI = S, Se) quaternary compounds for earth-abundant photovoltaics
JF - Phys. Chem. Chem. Phys.
Y1 - 2016
A1 - Hong, Feng
A1 - Lin, Wenjun
A1 - Meng, Weiwei
A1 - Yan, Yanfa
VL - 18
UR - http://xlink.rsc.org/?DOI=C5CP06977G
CP - 6
J1 - Phys. Chem. Chem. Phys.
KW - Hong2016
ER -
TY - JOUR
T1 - Development of high-performance multicrystalline silicon for photovoltaic industry
JF - Progress in Photovoltaics: Research and Applications
Y1 - 2015
A1 - Yang, Y. M.
A1 - Yu, A.
A1 - Hsu, B.
A1 - Hsu, W. C.
A1 - Yang, A.
A1 - Lan, C. W.
AB - The low cost and high quality of multicrystalline silicon (mc‐Si) based on directional solidification has become the main stream in photovoltaic (PV) industry. The mc‐Si quality affects directly the conversion efficiency of solar cells, and thus, it is crucial to the cost of PV electricity. With the breakthrough of crystal growth technology, the so‐called high‐performance mc‐Si has increased about 1% in solar cell efficiency from 16.6% in 2011 to 17.6% in 2012 based on the whole ingot performance. In this paper, we report our development of this high‐performance mc‐Si. The key ideas behind this technology for defect control are discussed. With the high‐performance mc‐Si, we have achieved an average efficiency of near 17.8% and an open‐circuit voltage (Voc) of 633 mV in production. The distribution of cell efficiency was rather narrow, and low‐efficiency cells (<17%) were also very few. The power of the 60‐cell module using the high‐efficiency cells could reach 261 W as well.
VL - 23
UR - http://doi.wiley.com/10.1002/pip.v23.3http://doi.wiley.com/10.1002/pip.2437https://onlinelibrary.wiley.com/doi/full/10.1002/pip.2437https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fpip.2437
CP - 3
J1 - Prog. Photovolt: Res. Appl.
KW - Yang2013
ER -
TY - JOUR
T1 - Strategic review of secondary phases, defects and defect-complexes in kesterite CZTS–Se solar cells
JF - Energy Environ. Sci.
Y1 - 2015
A1 - Kumar, Mukesh
A1 - Dubey, Ashish
A1 - Adhikari, Nirmal
A1 - Venkatesan, Swaminathan
A1 - Qiao, Qiquan
VL - 8
UR - http://xlink.rsc.org/?DOI=C5EE02153G
CP - 11
J1 - Energy Environ. Sci.
KW - Kumar2015
ER -
TY - JOUR
T1 - Device characteristics of CZTSSe thin-film solar cells with 12.6% efficiency
JF - Advanced Energy Materials
Y1 - 2014
A1 - Wang, Wei
A1 - Winkler, Mark T
A1 - Oki Gunawan
A1 - Tayfun Gokmen
A1 - Todorov, Teodor K
A1 - Zhu, Yu
A1 - Mitzi, David B
VL - 4
KW - wang2014device
ER -
TY - CONF
T1 - Recent R&D progress in solar frontier's small-sized Cu (InGa)(SeS)2 solar cells
T2 - 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)
Y1 - 2014
A1 - Nakamura, Motoshi
A1 - Yoneyama, Nobutaka
A1 - Horiguchi, Kyouhei
A1 - Iwata, Yasuaki
A1 - Yamaguchi, Koji
A1 - Sugimoto, Hiroki
A1 - Kato, Takuya
JA - 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)
PB - IEEE
KW - nakamura2014recent
ER -
TY - JOUR
T1 - The Recombination Parameter J0
JF - Energy Procedia
Y1 - 2014
A1 - Andrés Cuevas
AB - The parameter J0, commonly used in solar cell modelling, has a deep physical meaning, which this paper intends to clarify. Upon examination, J0 can be identified as the recombination current density in thermal equilibrium. In many cases the same equilibrium parameter J0 can be used to describe carrier recombination under external illumination. Nevertheless, when carriers flow from the point where they are generated towards a high recombination site the value of J0 that matters to solar cell operation differs from that in equilibrium. In addition, J0, may in certain cases be dependent on the excess carrier concentration. We conclude by recommending that J0 be referred to as a recombination parameter.
VL - 55
UR - http://www.sciencedirect.com/science/article/pii/S1876610214012971#
J1 - Energy Procedia
KW - Cuevas2014
ER -
TY - JOUR
T1 - Band tailing and efficiency limitation in kesterite solar cells
JF - Applied Physics Letters
Y1 - 2013
A1 - Tayfun Gokmen
A1 - Oki Gunawan
A1 - Teodor K. Todorov
A1 - David B. Mitzi
VL - 103
UR - http://dx.doi.org/10.1063/1.4820250
KW - Gokmen2013
ER -
TY - JOUR
T1 - High-efficiency Cu(In,Ga)Se2 cells and modules
JF - Solar energy materials and solar cells
Y1 - 2013
A1 - Powalla, Michael
A1 - Jackson, Philip
A1 - Witte, Wolfram
A1 - Hariskos, Dimitrios
A1 - Paetel, Stefan
A1 - Tschamber, Carsten
A1 - Wischmann, Wiltraud
VL - 119
KW - powalla2013high
ER -
TY - JOUR
T1 - The Influence of Absorber Thickness on Cu(In,Ga)Se2 Solar Cells With Different Buffer Layers
JF - IEEE journal of photovoltaics
Y1 - 2013
A1 - Pettersson, Jonas
A1 - Törndahl, Tobias
A1 - Platzer-Björkman, Charlotte
A1 - Hultqvist, Adam
A1 - Edoff, Marika
VL - 3
UR - https://ieeexplore.ieee.org/abstract/document/6579660
KW - pettersson2013influence
ER -
TY - Generic
T1 - Minerals Yearbook, Vol. I, Metals & Minerals:
Y1 - 2013
A1 - Lisa A. Corathers
PB - U.S. Government Printing Office
UR - http://minerals.usgs.gov/minerals/pubs/commodity/silicon/mcs-2013-simet.pdf
KW - usgs_silicon_2013
ER -
TY - CONF
T1 - SPIE ProceedingsNon PN junction solar cells using carrier selective contacts
T2 - SPIE OPTOPhysics, Simulation, and Photonic Engineering of Photovoltaic Devices II
Y1 - 2013
A1 - Bowden, Stuart
A1 - Ghosh, Kunal
A1 - Honsberg, Christiana
JA - SPIE OPTOPhysics, Simulation, and Photonic Engineering of Photovoltaic Devices II
PB - SPIE
CY - San Francisco, California, USA
UR - http://proceedings.spiedigitallibrary.org/proceeding.aspx?doi=10.1117/12.2004259
KW - Bowden2013
ER -
TY - CHAP
T1 - Cu(In,Ga)Se2 Thin-Film Solar Cells
T2 - Solar Cells: Materials, Manufacture and Operation
Y1 - 2012
A1 - Rau, U.
A1 - Schock, H.W.
A1 - Castaner, L
ED - McEvoy, Augustin
ED - Markvart, Tom
JA - Solar Cells: Materials, Manufacture and Operation
PB - Academic Press
CY - London
KW - mcevoy2012solar
ER -
TY - JOUR
T1 - Facile Synthesis of Colloidal CuO Nanocrystals for Light-Harvesting Applications
JF - Journal of Nanomaterials
Y1 - 2012
A1 - Lim, Yee-Fun
A1 - Choi, Joshua J.
A1 - Hanrath, Tobias
VL - 20123312825910287
UR - http://www.hindawi.com/journals/jnm/2012/393160/
CP - 710315291
J1 - Journal of Nanomaterials
KW - Lim2012
ER -
TY - JOUR
T1 - From the Cover: Anomalously weak solar convection
JF - Proceedings of the National Academy of Sciences
Y1 - 2012
A1 - Hanasoge, S. M.
A1 - Duvall, T. L.
A1 - Sreenivasan, K. R.
AB - Convection in the solar interior is thought to comprise structures on a spectrum of scales. This conclusion emerges from phenomenological studies and numerical simulations, though neither covers the proper range of dynamical parameters of solar convection. Here, we analyze observations of the wavefield in the solar photosphere using techniques of time-distance helioseismology to image flows in the solar interior. We downsample and synthesize 900 billion wavefield observations to produce 3 billion cross-correlations, which we average and fit, measuring 5 million wave travel times. Using these travel times, we deduce the underlying flow systems and study their statistics to bound convective velocity magnitudes in the solar interior, as a function of depth and spherical-harmonic degree ℓ. Within the wavenumber band ℓ < 60, convective velocities are 20–100 times weaker than current theoretical estimates. This constraint suggests the prevalence of a different paradigm of turbulence from that predicted by existing models, prompting the question: what mechanism transports the heat flux of a solar luminosity outwards? Advection is dominated by Coriolis forces for wavenumbers ℓ < 60, with Rossby numbers smaller than approximately 10-2 at r/R⊙ = 0.96, suggesting that the Sun may be a much faster rotator than previously thought, and that large-scale convection may be quasi-geostrophic. The fact that isorotation contours in the Sun are not coaligned with the axis of rotation suggests the presence of a latitudinal entropy gradient.
VL - 109
CP - 30
J1 - Proceedings of the National Academy of Sciences
KW - Hanasoge2012
ER -
TY - JOUR
T1 - Improved quantitative description of Auger recombination in crystalline silicon
JF - Physical Review B
Y1 - 2012
A1 - Richter, Armin
A1 - Stefan W. Glunz
A1 - Werner, Florian
A1 - Jan Schmidt
A1 - Andrés Cuevas
AB - An accurate quantitative description of the Auger recombination rate in silicon as a function of the dopant density and the carrier injection level is important to understand the physics of this fundamental mechanism and to predict the physical limits to the performance of silicon based devices. Technological progress has permitted a near suppression of competing recombination mechanisms, both in the bulk of the silicon crystal and at the surfaces. This, coupled with advanced characterization techniques, has led to an improved determination of the Auger recombination rate, which is lower than previously thought. In this contribution we present a systematic study of the injection-dependent carrier recombination for a broad range of dopant concentrations of high-purity n-type and p-type silicon wafers passivated with state-of-the-art dielectric layers of aluminum oxide or silicon nitride. Based on these measurements, we develop a general parametrization for intrinsic recombination in crystalline silicon at 300 K consistent with the theory of Coulomb-enhanced Auger and radiative recombination. Based on this improved description we are able to analyze physical aspects of the Auger recombination mechanism such as the Coulomb enhancement.
VL - 86
CP - 16
J1 - Phys. Rev. B
KW - Richter2012
ER -
TY - JOUR
T1 - Isotextured Silicon Solar Cell Analysis and Modeling 1: Optics
JF - IEEE Journal of Photovoltaics
Y1 - 2012
A1 - Baker-Finch, Simeon C.
A1 - McIntosh, Keith R.
A1 - Terry, Mason L.
VL - 2
CP - 4
J1 - IEEE J. Photovoltaics
KW - 533
ER -
TY - JOUR
T1 - MEASURING THE SOLAR RADIUS FROM SPACE DURING THE 2003 AND 2006 MERCURY TRANSITS
JF - The Astrophysical Journal
Y1 - 2012
A1 - Emilio, M.
A1 - Kuhn, J. R.
A1 - Bush, R. I.
A1 - Scholl, I. F.
VL - 750
UR - http://stacks.iop.org/0004-637X/750/i=2/a=135?key=crossref.05e0b42eda734799131016b454577c66http://stacks.iop.org/0004-637X/750/i=2/a=135/pdf
CP - 2
J1 - ApJ
KW - Emilio2012
ER -
TY - ICOMM
T1 - Measuring the Universe
Y1 - 2012
A1 - International Astronomical Union
PB - International Astronomical Union
VL - 2018
KW - IAU2012
ER -
TY - CONF
T1 - OPAL 2: Rapid optical simulation of silicon solar cells
T2 - 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC)2012 38th IEEE Photovoltaic Specialists Conference
Y1 - 2012
A1 - McIntosh, Keith R.
A1 - Baker-Finch, Simeon C.
AB - The freeware program OPAL 2 computes the optical losses associated with the front surface of a Si solar cell. It calculates the losses for any angle of incidence within seconds, where the short computation time is achieved by decoupling the ray tracing from the Fresnel equations. Amongst other morphologies, OPAL 2 can be used to assess the random-pyramid texture of c-Si solar cells, or the `isotexture' of mc-Si solar cells, and to determine (i) the optimal thickness of an antireflection coating with or without encapsulation, (ii) the impact of imperfect texturing, such as non-ideal texture angles, over-etched isotexture, and flat regions, and (iii) the subsequent 1D generation profile in the Si. This paper describes the approach and assumptions employed by OPAL 2 and presents examples that demonstrate the dependence of optical losses on texture quality and incident angle.
JA - 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC)2012 38th IEEE Photovoltaic Specialists Conference
PB - IEEE
CY - Austin, TX, USA
SN - 978-1-4673-0064-3
KW - 532
ER -
TY - ICOMM
T1 - Synthesis and Purification of Bulk Semiconductors
Y1 - 2012
A1 - C. Smith
A1 - A Barron
UR - http://cnx.org/content/m23936/1.7/
KW - Smith2012
ER -
TY - JOUR
T1 - Colloidal Iron Pyrite (FeS 2 ) Nanocrystal Inks for Thin-Film Photovoltaics
JF - Journal of the American Chemical Society
Y1 - 2011
A1 - Puthussery, James
A1 - Seefeld, Sean
A1 - Berry, Nicholas
A1 - Gibbs, Markelle
A1 - Law, Matt
VL - 133
UR - http://pubs.acs.org/doi/abs/10.1021/ja1096368http://pubs.acs.org/doi/pdf/10.1021/ja1096368
CP - 4
J1 - J. Am. Chem. Soc.
KW - puthussery2011
ER -
TY - CHAP
T1 - Cu(InGa)Se2 Solar Cells
T2 - Handbook of photovoltaic science and engineering
Y1 - 2011
A1 - Shafarman, William
A1 - Sieventritt, Susanne
A1 - Stolt, Lars
ED - Luque, Antonio
ED - Hegedus, Steven
JA - Handbook of photovoltaic science and engineering
PB - John Wiley & Sons
KW - luque2011handbook
ER -
TY - JOUR
T1 - Effects of electrical contacts on the photoconductive gain of nanowire photodetectors
JF - Applied Physics Letters
Y1 - 2011
A1 - Park, Hongsik
A1 - Kim, Jin Ho
A1 - Beresford, Roderic
A1 - Xu, Jimmy
VL - 99
UR - http://link.aip.org/link/APPLAB/v99/i14/p143110/s1&Agg=doi
CP - 14
J1 - Appl. Phys. Lett.
KW - Park2011
ER -
TY - JOUR
T1 - Electronic structure of TiS2 and its electric transport properties under high pressure
JF - Journal of Applied Physics
Y1 - 2011
A1 - Liu, Bao
A1 - Yang, Jie
A1 - Han, Yonghao
A1 - Hu, Tingjing
A1 - Ren, Wanbin
A1 - Liu, Cailong
A1 - Ma, Yanzhang
A1 - Gao, Chunxiao
VL - 109
UR - http://link.aip.org/link/JAPIAU/v109/i5/p053717/s1&Agg=doi
CP - 5
J1 - J. Appl. Phys.
KW - Liu2011
ER -
TY - JOUR
T1 - Extraction of important electrical parameters of CuO
JF - Physica B: Condensed Matter
Y1 - 2011
A1 - Serin, T.
A1 - Yildiz, A.
A1 - Şahin, Ş.
A1 - Serin, N.
VL - 406
UR - http://linkinghub.elsevier.com/retrieve/pii/S0921452610010999
CP - 3
J1 - Physica B: Condensed Matter
KW - Serin2011
ER -
TY - JOUR
T1 - Fabrication and Characterization of CuO-based Solar Cells
JF - Journal of Materials Science Research
Y1 - 2011
A1 - KIDOWAKI, Hiroki
A1 - OKU, Takeo
A1 - Akiyama, Tsuyoshi
A1 - SUZUKI, Atsushi
A1 - JEYADEVAN, Balachandran
A1 - Cuya, Jhon
VL - 1
UR - http://www.ccsenet.org/journal/index.php/jmsr/article/view/14002
CP - 1
J1 - JMSR
KW - Kidowaki2011
ER -
TY - THES
T1 - Heterojunction and Nanostructured Photovoltaic Device: Theory and Experiment
Y1 - 2011
A1 - Ghosh, Kunal
KW - a-Si/c-Si heterojunction
KW - Alternative energy
KW - Engineering
KW - Nanostructure
KW - Photovoltaics
KW - Solar
AB - A primary motivation of research in photovoltaic technology is to obtain higher efficiency photovoltaic devices at reduced cost of production so that solar electricity can be cost competitive. The majority of photovoltaic technologies are based on p-n junction, with efficiency potential being much lower than the thermodynamic limits of individual technologies and thereby providing substantial scope for further improvements in efficiency. The thesis explores photovoltaic devices using new physical processes that rely on thin layers and are capable of attaining the thermodynamic limit of photovoltaic technology. Silicon heterostructure is one of the candidate technologies in which thin films induce a minority carrier collecting junction in silicon and the devices can achieve efficiency close to the thermodynamic limits of silicon technology. The thesis proposes and experimentally establishes a new theory explaining the operation of silicon heterostructure solar cells. The theory will assist in identifying the optimum properties of thin film materials for silicon heterostructure and help in design and characterization of the devices, along with aiding in developing new devices based on this technology. The efficiency potential of silicon heterostructure is constrained by the thermodynamic limit (31%) of single junction solar cell and is considerably lower than the limit of photovoltaic conversion (\textasciitilde 80 %). A further improvement in photovoltaic conversion efficiency is possible by implementing a multiple quasi-fermi level system (MQFL). A MQFL allows the absorption of sub band gap photons with current being extracted at a higher band-gap, thereby allowing to overcome the efficiency limit of single junction devices. A MQFL can be realized either by thin epitaxial layers of alternating higher and lower band gap material with nearly lattice matched (quantum well) or highly lattice mismatched (quantum dot) structure. The thesis identifies the material combination for quantum well structure and calculates the absorption coefficient of a MQFl based on quantum well. GaAsSb (barrier)/InAs(dot) was identified as a candidate material for MQFL using quantum dot. The thesis explains the growth mechanism of GaAsSb and the optimization of GaAsSb and GaAs heterointerface.
PB - Arizona State University
UR - http://hdl.handle.net/2286/R.I.14312
KW - Ghosh2011
ER -
TY - JOUR
T1 - The path towards a high-performance solution-processed kesterite solar cell
JF - Solar Energy Materials and Solar Cells
Y1 - 2011
A1 - David B. Mitzi
A1 - Oki Gunawan
A1 - Teodor K. Todorov
A1 - Kejia Wang
A1 - Supratik Guha
KW - Solution processing
AB - Despite the promise of thin-film Cu(In,Ga)(S,Se)2 (CIGSSe) chalcopyrite and CdTe photovoltaic technologies with respect to reducing cost per watt of solar energy conversion, these approaches rely on elements that are either costly and/or rare in the earth's crust (e.g., In, Ga, Te) or that present toxicity issues (e.g., Cd), thereby potentially limiting these technologies in terms of future cost reduction and production growth. In order to develop a photovoltaic technology that is truly compatible with terawatt deployment, it is desirable to consider material systems that employ less toxic and lower cost elements, while maintaining the advantages of the chalcopyrite and CdTe materials with respect to appropriate direct band gap tunability over the solar spectrum, high device performance (e.g., >10% power conversion efficiency) and compatibility with low-cost manufacturing. In this review, the development of kesterite-based Cu2ZnSn(S,Se)4 (CZTSSe) thin-film solar cells, in which the indium and gallium from \{CIGSSe\} are replaced by the readily available elements zinc and tin, will be reviewed. While vacuum-deposited devices have enabled optimization within the compositional phase space and yielded selenium-free \{CZTS\} device efficiencies of as high as 6.8%, more recently a liquid-based approach has been described that has enabled deposition of \{CZTSSe\} devices with power conversion efficiency of 9.7%, bringing the kesterite-based technology into a range of potential commercial interest. Electrical characterization studies on these high-performance \{CZTSSe\} cells reveal some of the key loss mechanisms (e.g., dominant interface recombination, high series resistance and low minority carrier lifetime) that limit the cell performance. Further elucidation of these mechanisms, as well as building an understanding of long-term device stability, are required to help propel this relatively new technology forward.
VL - 95
UR - http://www.sciencedirect.com/science/article/pii/S0927024810006719
KW - Mitzi2011
ER -
TY - RPRT
T1 - Silicon and Ferrosilicon: Global Industry Markets and Outlook, 13th edition
Y1 - 2011
PB - Roskill
CY - London
SN - 978 0 86214 573 6
UR - http://www.roskill.com/reports/steel-alloys/silicon
KW - roskill2011
ER -
TY - JOUR
T1 - A Theoretical Search for Efficient Dopants in Mg2X (X = Si, Ge, Sn) Thermoelectric Materials
JF - Journal of Electronic Materials
Y1 - 2011
A1 - Zwolenski, P.
A1 - Tobola, J.
A1 - Kaprzyk, S.
VL - 40
UR - http://link.springer.com/10.1007/s11664-011-1624-yhttp://www.springerlink.com/index/pdf/10.1007/s11664-011-1624-y
CP - 5
J1 - Journal of Elec Materi
KW - Zwolenski2011
ER -
TY - CONF
T1 - Gen III: Improved Performance at Lower Cost
T2 - 35th IEEE Photovoltaic Specialists Conference
Y1 - 2010
A1 - Peter J. Cousins
A1 - David D. Smith
A1 - Hsin-Chiao Luan
A1 - Jane Manning
A1 - Tim D. Dennis
A1 - Ann Waldhaue
A1 - Karen E. Wilson
A1 - Gabriel Harley
A1 - William P. Mulligan
JA - 35th IEEE Photovoltaic Specialists Conference
PB - IEEE
CY - Honolulu, Hawaii
N1 -
KW - Cousins2010
ER -
TY - JOUR
T1 - GISS Surface Temperature Analysis
Y1 - 2010
A1 - NASA
UR - http://data.giss.nasa.gov/gistemp/graphs/
N1 -
KW - NASA2010
ER -
TY - JOUR
T1 - Green synthesis of tunable Cu(In1−xGax)Se2 nanoparticles using non-organic solvents
JF - Green Chemistry
Y1 - 2010
A1 - Al Juhaiman, Layla
A1 - Scoles, Ludmila
A1 - Kingston, David
A1 - Patarachao, Bussaraporn
A1 - Wang, Dashan
A1 - Bensebaa, Farid
VL - 12
UR - http://xlink.rsc.org/?DOI=c001813a
CP - 7
J1 - Green Chem.
KW - Juhaiman2010
ER -
TY - JOUR
T1 - Optical properties of copper indium diselenide thin films
JF - Chalcogenide Letters
Y1 - 2010
A1 - Prabahar, S
A1 - Balasubramanian, V
A1 - Suryanarayanan, N
A1 - Muthukumarasamy, N
VL - 7
KW - Prabahar2010
ER -
TY - JOUR
T1 - Solar Cell Device Physics
Y1 - 2010
A1 - Stephen J. Fonash
PB - Academic Press
SN - 978-0-12-374774-7
UR - http://www.amazon.com/Solar-Cell-Device-Physics-Second/dp/0123747740/ref=sr_1_1?s=books&ie=UTF8&qid=1279652144&sr=1-1
N1 -
1. Introduction
2. Material Properties and Device Physics Basic to Photovoltaics
3. Structures, Materials, and Scale
4. Homojunction Solar Cells
5. Semiconductor-semiconductor Heterojunction Solar Cells
6. Surface-barrier Solar Cells
7. Dye-sensitized Solar Cells
Appendicies
KW - Fonash2009
ER -
TY - JOUR
T1 - Solar cell efficiency tables (version 35)
JF - Progress in Photovoltaics: Research and Applications
Y1 - 2010
A1 - Martin A Green
A1 - Keith Emery
A1 - Yoshihiro Hishikawa
A1 - Wilhelm Warta
KW - Conversion efficiency
KW - Energy conversion
KW - solar cells
KW - Solar energy
KW - Solar power generation
AB - Consolidated tables showing an extensive listing of the highest independently confirmed efficiencies for solar cells and modules are presented. Guidelines for inclusion of results into these tables are outlined and new entries since July 2009 are reviewed. Copyright 2010 John Wiley Sons, Ltd.
VL - 18
UR - http://dx.doi.org/10.1002/pip.974
N1 - Compendex
KW - Green2010
ER -
TY - JOUR
T1 - Sonochemical synthesis, characterization and thermal and optical analysis of CuO nanoparticles
JF - Physica B: Condensed Matter
Y1 - 2010
A1 - Ranjbar-Karimi, Reza
A1 - Bazmandegan-Shamili, Alireza
A1 - Aslani, Alireza
A1 - Kaviani, Karim
VL - 405
UR - http://linkinghub.elsevier.com/retrieve/pii/S0921452610003832
CP - 15
J1 - Physica B: Condensed Matter
KW - Ranjbar2010
ER -
TY - JOUR
T1 - Structure and photovoltaic activity of cupric oxide-based thin film solar cells
JF - Journal of the Ceramic Society of Japan
Y1 - 2010
A1 - MOTOYOSHI, Ryosuke
A1 - OKU, Takeo
A1 - KIDOWAKI, Hiroki
A1 - SUZUKI, Atsushi
A1 - KIKUCHI, Kenji
A1 - KIKUCHI, Shiomi
A1 - JEYADEVAN, Balachandran
VL - 118
UR - http://joi.jlc.jst.go.jp/JST.JSTAGE/jcersj2/118.1021?from=CrossRef
CP - 1383
J1 - J. Ceram. Soc. Japan
KW - Motoyoshi2010
ER -
TY - JOUR
T1 - Towards solar grade silicon: Challenges and benefits for low cost photovoltaics
JF - Solar Energy Materials and Solar Cells
Y1 - 2010
A1 - Pizzini, Sergio
VL - 94
UR - http://linkinghub.elsevier.com/retrieve/pii/S0927024810000310
CP - 9
J1 - Solar Energy Materials and Solar Cells
KW - pizzini2010
ER -
TY - Generic
T1 - World’s Highest Efficiency Triple-junction Solar Cells Fabricated by Inverted Layers Transfer Process
T2 - 35 IEEE Photovoltaic Specialist Conference
Y1 - 2010
A1 - Takamoto, T.
A1 - Agui, T.
A1 - Yoshida, A.
A1 - Nakaido, K.
A1 - Juso, H.
A1 - Sasaki, K.
A1 - Nakamura, K.
A1 - Yamaguchi, H.
A1 - Kodama, T.
A1 - Washio, H.
A1 - Imazumi, M.
A1 - Takahashi, M.
JA - 35 IEEE Photovoltaic Specialist Conference
CY - Honolulu HI, USA
N1 -
KW - Takamoto2010
ER -
TY - JOUR
T1 - Copper oxide thin film and nanowire as a barrier in ZnO dye-sensitized solar cells
JF - Thin Solid Films
Y1 - 2009
A1 - Raksa, Phathaitep
A1 - Nilphai, Sanpet
A1 - Gardchareon, Atcharawon
A1 - Choopun, Supab
VL - 517
UR - http://linkinghub.elsevier.com/retrieve/pii/S0040609009004799
CP - 17
J1 - Thin Solid Films
KW - Raksa2009
ER -
TY - JOUR
T1 - Crystal and electronic band structure of Cu2ZnSnX4 (X= S and Se) photovoltaic absorbers: first-principles insights
JF - Applied Physics Letters
Y1 - 2009
A1 - Chen, Shiyou
A1 - Gong, XG
A1 - Walsh, Aron
A1 - Wei, Su-Huai
VL - 94
KW - chen2009crystal
ER -
TY - JOUR
T1 - Development of CZTS-based thin film solar cells
JF - Thin Solid Films
Y1 - 2009
A1 - Hironori Katagiri
A1 - Jimbo, Kazuo
A1 - Maw, Win Shwe
A1 - Oishi, Koichiro
A1 - Yamazaki, Makoto
A1 - Araki, Hideaki
A1 - Takeuchi, Akiko
VL - 517
KW - Katagiri2009
ER -
TY - Generic
T1 - METAMORPHIC GaInP/GaInAs/Ge TRIPLE-JUNCTION SOLAR CELLS WITH > 41 % EFFICIENCY
T2 - 34th IEEE Photovoltaic Specialists Conference
Y1 - 2009
A1 - F. Dimroth
A1 - W. Guter
A1 - J. Schöne
A1 - E. Welser
A1 - M. Steiner
A1 - E. Oliva
A1 - A. Wekkeli
A1 - G. Siefer
A1 - S.P. Philipps
A1 - A.W. Bett
JA - 34th IEEE Photovoltaic Specialists Conference
N1 -
KW - Dimroth2009
ER -
TY - JOUR
T1 - The path to 25% silicon solar cell efficiency: History of silicon cell evolution
JF - Progress in Photovoltaics: Research and Applications
Y1 - 2009
A1 - Martin A Green
VL - 17
N1 -
KW - Green2009
ER -
TY - JOUR
T1 - Physics of Solar Cells
Y1 - 2009
A1 - Peter Würfel
PB - Wiley-VCH
CY - Mörlenbach, Germany
SN - 978-3-527-40857-3
UR - http://www.amazon.com/Physics-Solar-Cells-Principles-Concepts/dp/3527404287
N1 - 1. Problems of the Energy Economy
2. Photons
3. Semiconductors
4. Conversion of Thermal Radiation into Chemical Energy
5. Conversion of Chemical Energy into Electrical Energy
6. Basic Structure of Solar Cells
7. Limitations on Energy Conversion in Solar Cells
8. Concepts for Improving the Efficiency of Solar Cells
9. Prospects for the Future
Solutions
Appendix
References
Index
KW - Wurfel2005
ER -
TY - JOUR
T1 - Structural, optical, and electrical properties of tin sulfide thin films grown by spray pyrolysis
JF - Thin Solid Films
Y1 - 2009
A1 - Calixto-Rodriguez, M.
A1 - Martinez, H.
A1 - Sanchez-Juarez, A.
A1 - Campos-Alvarez, J.
A1 - Tiburcio-Silver, A.
A1 - Calixto, M.E.
VL - 517
UR - http://linkinghub.elsevier.com/retrieve/pii/S0040609008014077http://api.elsevier.com/content/article/PII:S0040609008014077?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:S0040609008014077?httpAccept=text/plain
CP - 7
J1 - Thin Solid Films
KW - Calixto2009
ER -
TY - CONF
T1 - Study of SnS:Bi thin films prepared by sulfurization
T2 - 2009 34th IEEE Photovoltaic Specialists Conference (PVSC)2009 34th IEEE Photovoltaic Specialists Conference (PVSC)
Y1 - 2009
A1 - Botero, M.
A1 - Bartolo Perez, P.
A1 - Calderon, C.
A1 - Romero, E.
A1 - Gordillo, G.
JA - 2009 34th IEEE Photovoltaic Specialists Conference (PVSC)2009 34th IEEE Photovoltaic Specialists Conference (PVSC)
PB - IEEE
CY - Philadelphia, PA, USA
SN - 978-1-4244-2949-3
UR - http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=5411154
KW - Botero2009
ER -
TY - JOUR
T1 - Surfactant-Assisted Hydrothermal Synthesis of Single phase Pyrite FeS 2 Nanocrystals
JF - Chemistry of Materials
Y1 - 2009
A1 - Wadia, Cyrus
A1 - Wu, Yue
A1 - Gul, Sheraz
A1 - Volkman, Steven K.
A1 - Guo, Jinghua
A1 - Alivisatos, A. Paul
VL - 21
UR - http://pubs.acs.org/doi/abs/10.1021/cm901273vhttp://pubs.acs.org/doi/pdf/10.1021/cm901273v
CP - 13
J1 - Chem. Mater.
KW - wadia2009
ER -
TY - JOUR
T1 - Synthesis of Cu2ZnSnS4 nanocrystals for use in low-cost photovoltaics
JF - Journal of the American Chemical Society
Y1 - 2009
A1 - Steinhagen, Chet
A1 - Panthani, Matthew G
A1 - Akhavan, Vahid
A1 - Goodfellow, Brian
A1 - Koo, Bonil
A1 - Korgel, Brian A
VL - 131
KW - steinhagen2009synthesis
ER -
TY - JOUR
T1 - Synthesis of Cu2ZnSnS4 Nanocrystal Ink and Its Use for Solar Cells
JF - Journal of the American Chemical Society
Y1 - 2009
A1 - Guo, Qijie
A1 - Hillhouse, Hugh W.
A1 - Rakesh Agrawal
VL - 131
UR - http://pubs.acs.org/doi/abs/10.1021/ja904981rhttp://pubs.acs.org/doi/pdf/10.1021/ja904981r
CP - 33
J1 - J. Am. Chem. Soc.
KW - Guo2009
ER -
TY - Generic
T1 - Tenorite Mineral Data
Y1 - 2009
A1 - D. Barthelmy
UR - http://webmineral.com/data/Tenorite.shtml
KW - Tenorite2009
ER -
TY - JOUR
T1 - Analysis of tandem solar cell efficiencies under {AM1.5G} spectrum using a rapid flux calculation method
JF - Progress in Photovoltaics: Research and Applications
Y1 - 2008
A1 - S. P. Bremner
A1 - M. Y. Levy
A1 - Christiana B Honsberg
AB - We report the use of a rapid flux calculation method using incomplete Riemann zeta functions as a replacement for the {Bose-Einstein} integral in detailed balance calculations to study the efficiency of tandem solar cell stacks under the terrestrial {AM1.5G} spectrum and under maximum concentration. The maximum limiting efficiency for unconstrained and constrained tandem stacks of up to eight solar cells, under the {AM1.5G} spectrum and maximum concentration, are presented. The results found agree well with previously published results with one exception highlighting the precautions necessary when calculating for devices under the {AM1.5G} spectrum. The band gap sensitivities of two tandem solar cell stack arrangements of current interest were also assessed. In the case of a three solar cell tandem stack the results show a large design space and illustrate that the constrained case is more sensitive to band gap variations. Finally, the effect of a non-optimum uppermost band gap in a series constrained five solar cell tandem stack was investigated. The results indicate that a significant re-design is only required when the uppermost band gap is greater than the optimum value with a relatively small effect on the limiting efficiency. It is concluded that this rapid flux calculation method is a powerful tool for the analysis of tandem solar cells and is particularly useful for the design of devices where optimum band gaps may not be available. Copyright © 2007 John Wiley & Sons, Ltd.
VL - 16
UR - http://dx.doi.org/10.1002/pip.799
KW - Bremner2008
ER -
TY - JOUR
T1 - Electrochemical Impedance Spectroscopy of Synthetic Pyrite Doped with As, Co, and Ni
JF - Journal of The Electrochemical Society
Y1 - 2008
A1 - Lehner, Stephen
A1 - Ciobanu, Madalina
A1 - Savage, Kaye
A1 - Cliffel, David E.
VL - 155
UR - http://jes.ecsdl.org/cgi/doi/10.1149/1.2885103https://syndication.highwire.org/content/doi/10.1149/1.2885103
CP - 5
J1 - J. Electrochem. Soc.
KW - lehner2008
ER -
TY - JOUR
T1 - Polymorphic Tin Sulfide Thin Films of Zinc Blende and Orthorhombic Structures by Chemical Deposition
JF - Journal of The Electrochemical Society
Y1 - 2008
A1 - Avellaneda, David
A1 - Nair, M. T. S.
A1 - Nair, P. K.
AB - Polycrystalline thin films (100–450nm in thickness) of SnS formed from chemical baths of Sn(II) in acetic acid/HCl solution, triethanolamine, NH3 (aq), and thioacetamide are polymorphic consisting of zinc blende (ZB) and orthorhombic (OR) structures. The ZB structure for the SnS film, reported in this work for the first time, has a lattice constant a=0.579nm and a direct (forbidden) bandgap of 1.7eV , which is distinct from that of SnS(ZB) , about 1eV . The electrical conductivity of SnS(ZB) is 6×10−6 (Ωcm)−1 p-type, with activation energies for the conductivity of 0.5eV at room temperature and 1.6meV near 10K . When a SnS(ZB) film is heated in air at 500°C for 30min , part of it transforms to SnO2 and to SnS(OR) ; after 2h 30min at 550°C in air the film converts to transparent SnO2 . Such a film has a bandgap of 3.7eV and electrical conductivity, ∼1 (Ωcm)−1 . Photovoltaic effect in different structures involving these films is presented.
VL - 155
UR - http://jes.ecsdl.org/cgi/doi/10.1149/1.2917198
CP - 7
J1 - J. Electrochem. Soc.
KW - Avellaneda2008
ER -
TY - JOUR
T1 - REST2: High-performance solar radiation model for cloudless-sky irradiance, illuminance, and photosynthetically active radiation – Validation with a benchmark dataset
JF - Solar Energy
Y1 - 2008
A1 - Gueymard, Christian A.
VL - 82
UR - https://linkinghub.elsevier.com/retrieve/pii/S0038092X07000990https://api.elsevier.com/content/article/PII:S0038092X07000990?httpAccept=text/xmlhttps://api.elsevier.com/content/article/PII:S0038092X07000990?httpAccept=text/plain
CP - 3
J1 - Solar Energy
KW - g2008
ER -
TY - JOUR
T1 - Self-consistent optical parameters of intrinsic silicon at 300 K including temperature coefficients
JF - Solar Energy Materials and Solar Cells
Y1 - 2008
A1 - Martin A Green
KW - Absorption coefficient
KW - optical properties
KW - SILICON SOLAR CELLS
AB - An updated tabulation is presented of the optical properties of intrinsic silicon, of particular interest in solar cell calculations. Improved values of absorption coefficient, refractive index and extinction coefficient at {300&\#xa0;K} are tabulated over the 0.25–1.45&\#xa0;μm wavelength range at 0.01&\#xa0;μm intervals. The self-consistent tabulation was derived from {Kramers–Kronig} analysis of updated reflectance data deduced from the literature. The inclusion of normalised temperature coefficients allows extrapolation over a wide temperature range, with accuracy similar to that of available experimental data demonstrated over the {−24&\#xa0;°C} to {200&\#xa0;°C} range.
VL - 92
UR - http://www.sciencedirect.com/science/article/pii/S0927024808002158
KW - green_self-consistent_2008
ER -
TY - JOUR
T1 - Applied Photovoltaics
Y1 - 2007
A1 - Wenham, S.R.
A1 - Martin A Green
A1 - Watt, M. E.
A1 - R. Corkish
AB -
PB - Earthscan
CY - London, UK
SN - 1-84407-401-3
UR - http://www.amazon.com/Applied-Photovoltaics-Stuart-R-Wenham/dp/1844074013/ref=sr_1_1?ie=UTF8&s=books&qid=1279558328&sr=8-1
N1 - Introduction
1. The Characteristics of Sunlight
2. Semiconductors and P-N Junctions
3. The Behavior of Solar Cells
4. Cell Properties and Design
5. PV Cell Interconnection and Module Fabrication
6. Stand-Alone Photovoltaic System Components
7. Designing Stand-Alone Photovoltaic Systems
8. Specific Purpose Photovoltaic Applications
9. Remote Area Power Supply Systems
10. Grid-Connected Photovoltaic Systems
11. Photovoltaic Water Pumping System Components
12. PV Water Pumping System Design
Appendicies
Index
KW - Wenham2007
ER -
TY - JOUR
T1 - Arsenic in iron disulfides in a brown coal from the North Bohemian Basin, Czech Republic
JF - International Journal of Coal Geology
Y1 - 2007
A1 - Rieder, Milan
A1 - Crelling, John C.
A1 - Šustai, Ondřej
A1 - Drábek, Milan
A1 - Weiss, Zdeněk
A1 - Klementová, Mariana
VL - 71
UR - http://linkinghub.elsevier.com/retrieve/pii/S0166516206001480http://api.elsevier.com/content/article/PII:S0166516206001480?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:S0166516206001480?httpAccept=text/plain
CP - 2-3
J1 - International Journal of Coal Geology
KW - rieder2007
ER -
TY - JOUR
T1 - On the band diagram of Mg2Si/Si heterojunction as deduced from optical constants dispersions
JF - Thin Solid Films
Y1 - 2007
A1 - Atanassov, A.
A1 - Baleva, M.
VL - 515
UR - http://linkinghub.elsevier.com/retrieve/pii/S0040609006010054
CP - 5
J1 - Thin Solid Films
KW - Atanassov2007
ER -
TY - JOUR
T1 - Crystallinity and surface effects on Young’s modulus of CuO nanowires
JF - Applied Physics Letters
Y1 - 2007
A1 - Tan, E. P. S.
A1 - Zhu, Y.
A1 - Yu, T.
A1 - Dai, L.
A1 - Sow, C. H.
A1 - Tan, V. B. C.
A1 - Lim, C. T.
VL - 90
UR - http://link.aip.org/link/APPLAB/v90/i16/p163112/s1&Agg=doi
CP - 16
J1 - Appl. Phys. Lett.
KW - Tan2007
ER -
TY - JOUR
T1 - Effects of Copper Oxide/Gold Electrode as the Source-Drain Electrodes in Organic Thin-Film Transistors
JF - Electrochemical and Solid-State Letters
Y1 - 2007
A1 - Park, Jeong-Woo
A1 - Baeg, Kang-Jun
A1 - Ghim, Jieun
A1 - Kang, Seok-Ju
A1 - Park, Jeong-Ho
A1 - Kim, Dong-Yu
VL - 10
UR - http://esl.ecsdl.org/cgi/doi/10.1149/1.2774683
CP - 11
J1 - Electrochem. Solid-State Lett.
KW - Park2007
ER -
TY - Generic
T1 - Low Cost, High Volume Production of >22% Efficiency Silicon Solar Cells
T2 - 22nd European Photovoltaic Specialist Conference
Y1 - 2007
A1 - De Ceuster, D.
A1 - P. Cousins
A1 - D. Rose
A1 - M. Cudzinovic
A1 - W. Mulligan
JA - 22nd European Photovoltaic Specialist Conference
N1 -
KW - DeCeuster2007
ER -
TY - JOUR
T1 - Optical and structural properties of manganese sulfide thin films
JF - Optical Materials
Y1 - 2007
A1 - Gümüş, C.
A1 - Ulutaş, C.
A1 - Ufuktepe, Y.
AB - Highly transparent crystalline manganese sulfide (γ-MnS) thin films were prepared on glass substrate by chemical bath deposition (CBD) method at room temperature (27 °C). The refractive index n(λ), extinction coefficient k(λ) and film thickness t are evaluated from spectrophotometric transmittance spectrum by using envelope method. The optical band gap of the film was estimated to be 3.88 eV. XRD measurements show that the MnS films are crystallized in the wurtzite phase and present a preferential orientation along the c-axis. The effect of trisodium citrate on crystalline films has been determined. The grain size of the film is estimated to be 29.8 nm using by the Scherrer’s formula.
VL - 29
UR - http://linkinghub.elsevier.com/retrieve/pii/S0925346706001972
CP - 9
J1 - Optical Materials
KW - Gumus2007
ER -
TY - JOUR
T1 - A review and comparison of different methods to determine the series resistance of solar cells
JF - Solar Energy Materials and Solar Cells
Y1 - 2007
A1 - PYSCH, D
A1 - A. Mette
A1 - Stefan W. Glunz
VL - 91
N1 -
KW - Pysch2007
ER -
TY - JOUR
T1 - Series resistance characterization of industrial silicon solar cells with screen-printed contacts using hotmelt paste
JF - Progress in Photovoltaics: Research and Applications
Y1 - 2007
A1 - A. Mette
A1 - et al
VL - 15
N1 -
KW - Mette2007
ER -
TY - JOUR
T1 - Global temperature change
JF - Proceedings of the National Academy of Sciences
Y1 - 2006
A1 - Hansen, J.
VL - 103
N1 -
KW - Hansen2006
ER -
TY - CONF
T1 - Low Light Performance of Mono-Crystalline Silicon Solar Cells
T2 - 4th World Conference on Photovoltaic Energy Conference
Y1 - 2006
A1 - Gabriela Bunea
A1 - Karen Wilson
A1 - Yevgeny Meydbray
A1 - Matthew Campbell
A1 - Denis De Ceuster
JA - 4th World Conference on Photovoltaic Energy Conference
CY - Waikoloa, HI
UR - http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4059885&tag=1
KW - bunea_low_2006
ER -
TY - JOUR
T1 - Microstructure dependent physical properties of evaporated tin sulfide films
JF - Journal of Applied Physics
Y1 - 2006
A1 - Devika, M.
A1 - Ramakrishna Reddy, K. T.
A1 - Koteeswara Reddy, N.
A1 - Ramesh, K.
A1 - Ganesan, R.
A1 - Gopal, E. S. R.
A1 - Gunasekhar, K. R.
AB - In the field of photovoltaics, semiconductors of the III-V group such as GaAs and InP have been considered as the most efficient absorber materials due to their direct energyband gap and high mobility. In these compounds, arsenic and phosphorus are highly toxic and expensive. In this work we present systematic preparation of low cost SnS thin films and characterize these films to test their suitability for photovoltaic applications. We have observed that the films (with thickness ≅0.5μm) grown at the substrate temperature of 275°C exhibit a low resistive single SnS phase and have a direct optical band gap of 1.35eV with an absorption coefficient of ∼105cm−1. SnSfilms could be alternative semiconductor materials as absorbers for the fabrication of photovoltaic devices.
VL - 100
UR - http://scitation.aip.org/content/aip/journal/jap/100/2/10.1063/1.2216790
CP - 2
J1 - J. Appl. Phys.
KW - Devika2006
ER -
TY - JOUR
T1 - Preparation and characterization of nanostructured CuO thin films for photoelectrochemical splitting of water
JF - Bulletin of Materials Science
Y1 - 2006
A1 - Chauhan, Diwakar
A1 - Satsangi, VR
A1 - Dass, Sahab
A1 - Shrivastav, Rohit
VL - 29
KW - Chauhan2006
ER -
TY - JOUR
T1 - Rapid and precise calculations of energy and particle flux for detailed-balance photovoltaic applications
JF - Solid-State Electronics
Y1 - 2006
A1 - M. Y. Levy
A1 - Christiana B Honsberg
VL - 50
KW - Levy2006
ER -
TY - BOOK
T1 - Semiconductor material and device characterization
Y1 - 2006
A1 - Dieter Schroder
PB - IEEE Press; Wiley
CY - Piscataway NJ; Hoboken N.J.
SN - 9780471739067
KW - Schroder2006
ER -
TY - JOUR
T1 - Annealing effects on the properties of copper oxide thin films prepared by chemical deposition
JF - Semiconductor Science and Technology
Y1 - 2005
A1 - Serin, Necmi
A1 - Serin, ülay
A1 - Şeyda Horzum
A1 - Çelik, Yasemin
VL - 20
UR - http://stacks.iop.org/0268-1242/20/i=5/a=012?key=crossref.e80ad675d4be3b601f49e0d1d5cceb0d
CP - 5
J1 - Semicond. Sci. Technol.
KW - Serin2005
ER -
TY - JOUR
T1 - Annealing effects on the properties of copper oxide thin films prepared by chemical deposition
JF - Semiconductor Science and Technology
Y1 - 2005
A1 - Necmi Serin
A1 - Tülay Serin
A1 - Şeyda Horzum
A1 - Yasemin Çelik
AB - We have investigated the annealing effect on the structural, optical and electrical properties of copper oxide films prepared on glass substrates by chemical deposition. The films were annealed in air for different temperatures ranging from 200 to 350 °C. X-ray diffraction patterns showed that the films as-deposited and annealed at 200 and 250 °C are of cuprite structure with composition Cu 2 O. Annealing at 300 °C converts these films to CuO. This conversion is accompanied by a shift in the optical band gap from 2.20 eV to 1.35 eV. Also this conversion was obtained by the dc electrical conductivity and FTIR spectroscopy measurements.
VL - 20
UR - http://stacks.iop.org/0268-1242/20/i=5/a=012
KW - Serin2005
ER -
TY - Generic
T1 - Approaching the 29% limit efficiency of silicon solar cells
T2 - Thirty-First IEEE Photovoltaic Specialists Conference
Y1 - 2005
A1 - Richard M Swanson
JA - Thirty-First IEEE Photovoltaic Specialists Conference
PB - 01/2005
CY - Lake buena Vista, FL, USA
N1 -
KW - Swanson2005
ER -
TY - JOUR
T1 - Characterization of electrical properties and photosensitivity of SnS thin films prepared by the electrochemical deposition method
JF - Solar Energy Materials and Solar Cells
Y1 - 2005
A1 - Sato, Naoya
A1 - Ichimura, Masaya
A1 - Arai, Eisuke
A1 - Yamazaki, Yoshihisa
AB - Using the electrochemical deposition (ECD) method, we prepared tin sulfide thin films, which are suitable for the absorption layer in solar cells because of its bandgap energy (∼1 eV). We first optimized pulse-form biasing for ECD by characterizing deposited samples with scanning electron microscope, Auger electron spectroscopy and X-ray diffraction measurements. Then, we investigated the electrical properties of deposited SnS thin films and the properties of contacts with several different metals. Furthermore, we observed the photoconductivity of the films by means of photoelectrochemical measurements. From these results, we confirmed that the SnS thin films show p-type conduction.
VL - 85
UR - http://linkinghub.elsevier.com/retrieve/pii/S0927024804002077http://api.elsevier.com/content/article/PII:S0927024804002077?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:S0927024804002077?httpAccept=text/plain
CP - 2
J1 - Solar Energy Materials and Solar Cells
KW - Sato2005
ER -
TY - JOUR
T1 - Electrical properties of spray pyrolytic tin sulfide films
JF - Solid-State Electronics
Y1 - 2005
A1 - Koteeswara Reddy, N.
A1 - Ramakrishna Reddy, K.T.
AB - Tin sulfide (SnxSy) films were prepared using spray pyrolysis technique at different substrate temperatures (Ts), (100–450 °C) on Corning 7059 glass substrates. The physical parameters such as electrical resistivity, Hall mobility and net carrier density of the films were determined at room temperature. The films grown in the substrate temperature range, 300–375 °C, were found to be p-type conducting. These SnS films showed average electrical resistivity of ∼30 Ω cm, Hall mobility of ∼130 cm2/V s and carrier density, >1015 cm−3. The temperature dependence of electrical conductivity of the films was also studied and the activation energies evaluated. The results obtained were discussed and reported.
VL - 49
UR - http://linkinghub.elsevier.com/retrieve/pii/S0038110105000845
CP - 6
J1 - Solid-State Electronics
KW - Koteeswara2005
ER -
TY - JOUR
T1 - First-principles calculations of the structural, electronic and optical properties of IIA-IV antifluorite compounds
JF - physica status solidi (b)
Y1 - 2005
A1 - Benhelal, O.
A1 - Chahed, A.
A1 - Laksari, S.
A1 - Abbar, B.
A1 - Bouhafs, B.
A1 - Aourag, H.
VL - 242
UR - http://doi.wiley.com/10.1002/%28ISSN%291521-3951http://doi.wiley.com/10.1002/pssb.v242:10http://doi.wiley.com/10.1002/pssb.200540063
CP - 10
J1 - phys. stat. sol. (b)
KW - Benhelal2005
ER -
TY - JOUR
T1 - First-principles study of the electronic properties of A2B3 minerals, with A=Bi,Sb and B=S,Se
JF - Physics and Chemistry of Minerals
Y1 - 2005
A1 - Caracas, Razvan
A1 - Gonze, Xavier
AB - We determine the valence electron density and the electron band structure of stibnite, bismutinite, guanajuatite and antimonelite using the density functional theory. All the compounds present similar electronic properties and exhibit a quasi-1D character. We perform a detailed analysis of the charge topology, the atomic static charges and volumes.
VL - 32
UR - http://rruff.geo.arizona.edu/AMS/authors/Caracas%20R
CP - 4
J1 - Phys Chem Minerals
KW - Caracas2005
ER -
TY - JOUR
T1 - Fundamental boron-oxygen-related carrier lifetime limit in mono- and multicrystalline silicon
JF - Progress in Photovoltaics: Research and Applications
Y1 - 2005
A1 - Bothe, Karsten
A1 - Sinton, Ron
A1 - Jan Schmidt
VL - 13
N1 -
KW - Bothe2005
ER -
TY - JOUR
T1 - Nanocrystalline CuO films prepared by pyrolysis of Cu-arachidate LB multilayers
JF - Colloids and Surfaces A: Physicochemical and Engineering Aspects
Y1 - 2005
A1 - Parhizkar, M.
A1 - Singh, Sukhvinder
A1 - Nayak, P.K.
A1 - Kumar, Nigvendra
A1 - Muthe, K.P.
A1 - Gupta, S.K.
A1 - Srinivasa, R.S.
A1 - Talwar, S.S.
A1 - Major, S.S.
VL - 257-258
UR - http://linkinghub.elsevier.com/retrieve/pii/S0927775704007320
J1 - Colloids and Surfaces A: Physicochemical and Engineering Aspects
KW - Parhizkar2005
ER -
TY - JOUR
T1 - Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence
JF - Applied Physics Letters
Y1 - 2005
A1 - Takashi Fuyuki
A1 - Hayato Kondo
A1 - Tsutomu Yamazaki
A1 - Yu Takahashi
A1 - Yukiharu Uraoka
KW - carrier lifetime
KW - electroluminescence
KW - elemental semiconductors
KW - MINORITY CARRIERS
KW - SILICON
KW - solar cells
PB - AIP
VL - 86
UR - http://link.aip.org/link/?APL/86/262108/1
KW - Fuyuki2005
ER -
TY - JOUR
T1 - Photovoltaic Solar Energy Generation
Y1 - 2005
A1 - Adolf Goetzberger
A1 - Volker Uwe Hoffmann
PB - Springer
CY - Berlin, Germany
SN - 3-540-23676-7
UR - http://www.amazon.com/Photovoltaic-Solar-Energy-Generation-Goetzberger/dp/3642062601/ref=sr_1_2?s=books&ie=UTF8&qid=1279649098&sr=1-2
N1 - 1. What is Photovoltaics?
2. Physics of Solar Cells
3. Silicon Solar Cell Material and Technology
4. Crystalline Thin-Film Silicon
5. Other Materials, New Concepts
6. Solar Cells and Solar Modules
7. PV Systems
8. PV Systems Installation Possibilities
9. Environmental Impacts by PV Systems
10. Efficinecy and Performance of PV Systems
11. PV Markets Support Measures and Costs
12. The Future PV
13. Other (Perhaps Competing) CO2-Free Energy Sources
14. Popular Killing Arguments Against PV
References
Index
KW - Goetzberger2005
ER -
TY - JOUR
T1 - Room temperature growth of CuO nanorod arrays on copper and their application as a cathode in dye-sensitized solar cells
JF - Materials Chemistry and Physics
Y1 - 2005
A1 - Anandan, Sambandam
A1 - Wen, Xiaogang
A1 - Yang, Shihe
VL - 93
UR - http://linkinghub.elsevier.com/retrieve/pii/S0254058405001197
CP - 1
J1 - Materials Chemistry and Physics
KW - Anandan2005
ER -
TY - JOUR
T1 - Thermoelectric properties of Bi-doped Mg2Si semiconductors
JF - Physica B: Condensed Matter
Y1 - 2005
A1 - Tani, Jun-ichi
A1 - Kido, Hiroyasu
VL - 364
UR - http://linkinghub.elsevier.com/retrieve/pii/S092145260500709X
CP - 1-4
J1 - Physica B: Condensed Matter
KW - Tani2005
ER -
TY - JOUR
T1 - Electronic color charts for dielectric films on silicon
JF - Optics Express
Y1 - 2004
A1 - Justin Henrie
A1 - Spencer Kellis
A1 - Stephen Schultz
A1 - Aaron Hawkins
KW - Color
KW - measurement
KW - optical properties
KW - Thin films
AB - This paper presents the calculation of the perceived color of dielectric films on silicon. A procedure is shown for computing the perceived color for an arbitrary light source, light incident angle, and film thickness. The calculated color is converted into {RGB} parameters that can be displayed on a color monitor, resulting in the generation of electronic color charts for dielectric films. This paper shows generated electronic color charts for both silicon dioxide and silicon nitride films on silicon.
VL - 12
UR - http://www.opticsexpress.org/abstract.cfm?URI=oe-12-7-1464
N1 -
KW - Henrie2004
ER -
TY - JOUR
T1 - Exact analytical solutions of the parameters of real solar cells using Lambert W-function
JF - Solar Energy Materials and Solar Cells
Y1 - 2004
A1 - Jain, A
VL - 81
UR - https://linkinghub.elsevier.com/retrieve/pii/S0927024803002605https://api.elsevier.com/content/article/PII:S0927-0248(03)00260-5?httpAccept=text/xmlhttps://api.elsevier.com/content/article/PII:S0927-0248(03)00260-5?httpAccept=text/plain
CP - 2
J1 - Solar Energy Materials and Solar Cells
KW - Jain2004
ER -
TY - JOUR
T1 - Influence of air annealing on the structural, optical and electrical properties of chemically deposited CdSe nano-crystallites
JF - Applied Surface Science
Y1 - 2004
A1 - Kale, R.B
A1 - Lokhande, C.D
VL - 223
UR - http://linkinghub.elsevier.com/retrieve/pii/S0169433203011541
CP - 4
J1 - Applied Surface Science
KW - Kale2004
ER -
TY - JOUR
T1 - Pressure-induced structural phase transition in the IV–VI semiconductor SnS
JF - Journal of Physics: Condensed Matter
Y1 - 2004
A1 - Ehm, L
A1 - Knorr, K
A1 - Dera, P
A1 - Krimmel, A
A1 - Bouvier, P
A1 - Mezouar, M
AB - The structural behaviour of SnS under high-pressure has been investigated by angular dispersive synchrotron powder diffraction up to 38.5 GPa. A structural phase transition from orthorhombic α-SnS to monoclinic γ-SnS was observed at 18.15 GPa. The fit of a Birch–Murnaghan equation-of-state gave the volume at zero pressure of V0 = 192.6(3) Å3, the bulk modulus at zero pressure of B0 = 36.6(9) GPa and the pressure derivative of the bulk modulus B'=5.5(2) for α-SnS and V0 = 160(1) Å, B0 = 86.0(5) GPa and B'=4 for γ-SnS. The improper ferro-elastic transition is of first-order and is accompanied by a large volume discontinuity of about 9.1%. The phase transition can be described in terms of a group/subgroup relationship. The doubling of the unit cell indicates a wavevector (1/2,0,1/2) at the U-point in the Brillouin zone.
VL - 16
UR - http://stacks.iop.org/0953-8984/16/i=21/a=004?key=crossref.fbc017dcad3d417136827c57d4ea2141
CP - 21
J1 - J. Phys.: Condens. Matter
KW - Ehm2004
ER -
TY - BOOK
T1 - Semiconductors Data Handbook
Y1 - 2004
A1 - Madelung, O
PB - Springer
CY - Berlin
SN - 9783642188657 3642188656
UR - http://www.amazon.com/Semiconductors-Data-Handbook-Otfried-Madelung/dp/3540404880
KW - Madelung2004
ER -
TY - BOOK
T1 - Semiconductors Data Handbook
Y1 - 2004
A1 - Madelung, O
PB - Springer
CY - Berlin
SN - 9783642188657 3642188656
UR - http://www.amazon.com/Semiconductors-Data-Handbook-Otfried-Madelung/dp/3540404880
KW - Madelung2004b
ER -
TY - JOUR
T1 - The American Mineralogist Crystal Structure Database
JF - American Mineralogist
Y1 - 2003
A1 - R. T. Downs
A1 - M. Hall-Wallace
VL - 88
KW - Downs2003
ER -
TY - Generic
T1 - Bismuthinite
Y1 - 2003
A1 - Ralph, J. R
UR - http://www.mindat.org/min-686.html
KW - Ralph2003
ER -
TY - Generic
T1 - Dependence of aluminium alloying on solar cell processing conditions
T2 - 13th Workshop on Crystalline Silicon Solar Cell Materials and Processes
Y1 - 2003
A1 - Christiana B Honsberg
A1 - Anwar, K.K.
A1 - Mehrvarz, H.R.
A1 - Cotter, J.E.
A1 - Wenham, S.R.
JA - 13th Workshop on Crystalline Silicon Solar Cell Materials and Processes
N1 -
KW - Honsberg2003
ER -
TY - JOUR
T1 - Effects of NaF coevaporation on structural properties of Cu (In, Ga) Se2 thin films
JF - Thin Solid Films
Y1 - 2003
A1 - Rudmann, D
A1 - Bilger, G
A1 - Kaelin, M
A1 - Haug, F-J
A1 - Zogg, H
A1 - Tiwari, AN
VL - 431
KW - rudmann2003effects
ER -
TY - JOUR
T1 - Electronic structures of semiconducting alkaline-earth metal silicides
JF - Journal of Alloys and Compounds
Y1 - 2003
A1 - Imai, Yoji
A1 - Watanabe, Akio
A1 - Mukaida, Masakazu
VL - 358
UR - http://linkinghub.elsevier.com/retrieve/pii/S0925838803000379
CP - 1-2
J1 - Journal of Alloys and Compounds
KW - Imai2003
ER -
TY - JOUR
T1 - Handbook of Photovoltaic Science and Engineering
Y1 - 2003
A1 - Luque, A.
A1 - Hegedus, S.
PB - John Wiley & Sons Ltd.
CY - Chichester, England
SN - 0-471-49196-9
UR - http://www.amazon.com/Handbook-Photovoltaic-Science-Engineering-Antonio/dp/0471491969/ref=pd_sim_b_7
N1 - 1. Status, Trends, Challenges and the Bright Future of Solar Electricity from Photovoltaics.
2. Motivation for Photovoltaic Application and Development
3. The Physics of the Solar Cell
4. Theoretical Limits of Photovoltaic Conversion
5. Solar Grade Silicon Feedstock
6. Bulk Crystal Growth and Wafering for PV
7. Crystalline Silicon Solar Cells and Modules
8. Thin-film Silicon Solar Cells
9. High-efficiency III-V Multijunction Solar Cells
10. Space Solar Cells and Arrays
11. Photovoltaic Concentrators
12. Amorphous Silicon-based Solar Cells
13. Cu(InGa)Se2 Solar Cells
14. Cadmium Telluride Solar Cells
15. Dye-sensitized Solar Cells
16. Measurement and Characterization of Solar Cells and Modules
17. Photovoltaic Systems
18. Electrochemical Storage for Photovoltaics
19. Power Conditioning for Photovoltaic Power Systems
20. Energy Collected and Delivered by PV Modules
21. Economic Analysis and Environmental Aspects of Photovoltaic Systems
22. PV in Architecture
23. Photovoltaics and Development
24. Financing PV Growth
Index
KW - Luque2003
ER -
TY - JOUR
T1 - The Physics of Solar Cells
Y1 - 2003
A1 - Jenny Nelson
AB -
PB - Imperial College Press
CY - London, UK
SN - 1-86094-340-3
UR - http://www.amazon.com/Physics-Solar-Properties-Semiconductor-Materials/dp/1860943497
N1 - 1. Introduction
2. Photons In, Electrons Out: Basic Principles of PV
3. Electrons and Holes and Semiconductors
4. Generation and Recombination
5. Junctions
6. Analysis of the p-n Junction
7. Monocrystalline Solar Cells
8. Thin Film Solar Cells
9. Managing Light
10. Over the Limit: Strategies for High Efficiency
Solutions
Index
KW - Nelson2003
ER -
TY - JOUR
T1 - Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing
JF - Journal of Applied Physics
Y1 - 2003
A1 - Pietro P Altermatt
A1 - Schenk, Andreas
A1 - Geelhaar, Frank
A1 - Heiser, Gernot
AB - The commonly used value of the intrinsic carrier density of crystalline silicon at 300 K is ni=1.00×1010 cm−3. It was experimentally determined by Sproul and Green, J. Appl. Phys. 70, 846 (1991), using specially designed solar cells. In this article, we demonstrate that the Sproul and Green experiment was influenced by band-gap narrowing, even though the dopant density of their samples was low (1014 to 1016 cm−3). We reinterpret their measurements by numerical simulations with a random-phase approximation model for band-gap narrowing, thereby obtaining ni=9.65×109 cm−3 at 300 K. This value is consistent with results obtained by Misiakos and Tsamakis, J. Appl. Phys. 74, 3293 (1993), using capacitance measurements. In this way, long-prevailing inconsistencies between independent measurement techniques for the determination of ni are resolved.
VL - 93
CP - 3
J1 - J. Appl. Phys.
KW - Altermatt2003
ER -
TY - JOUR
T1 - Solar Position Algorithm for Solar Radiation Applications
Y1 - 2003
A1 - Reda, I
A1 - Andreas, A
N1 -
KW - Reda2003
ER -
TY - JOUR
T1 - First-principles studies of the structural and electronic properties of pyrite
JF - Physical Review B
Y1 - 2002
A1 - Muscat, Joseph
A1 - Hung, Andrew
A1 - Russo, Salvy
A1 - Yarovsky, Irene
VL - 65
UR - https://link.aps.org/doi/10.1103/PhysRevB.65.054107http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.65.054107/fulltexthttp://link.aps.org/article/10.1103/PhysRevB.65.054107
CP - 5
J1 - Phys. Rev. B
KW - muscat2000
ER -
TY - JOUR
T1 - General parameterization of Auger recombination in crystalline silicon
JF - Journal of Applied Physics
Y1 - 2002
A1 - Mark J Kerr
A1 - Andrés Cuevas
KW - Auger effect
KW - carrier lifetime
KW - electron-hole recombination
KW - elemental semiconductors
KW - SILICON
PB - AIP
VL - 91
UR - http://link.aip.org/link/?JAP/91/2473/1
KW - Kerr2002
ER -
TY - JOUR
T1 - Generalized analysis of quasi-steady-state and transient decay open circuit voltage measurements
JF - Journal of Applied Physics
Y1 - 2002
A1 - Mark J Kerr
A1 - Andrés Cuevas
A1 - Ronald A. Sinton
AB - The current–voltage characteristics of solar cells and photodiodes can be determined by measuring the open-circuit voltage as a function of a slowly varying light intensity. This article presents a detailed theoretical analysis and interpretation of such quasi-steady-state Voc measurements (QssVoc). The ability of this analysis to accurately obtain the true steady-state device characteristics even in the case of high lifetime, high resistivity silicon devices is demonstrated experimentally. The QssVoc technique can be used to determine the minority carrier lifetime, and the new generalized analysis is required to do this accurately. An important outcome is that solar cell and diode device characteristics can be obtained from measurements of either the photoconductance or the open-circuit voltage, even using transient techniques.
VL - 91
N1 -
KW - Kerr2002
ER -
TY - BOOK
T1 - Materials handbook: [foundation for the science of metallurgy; compares the advantages and disadvantages of different manufacturing processes; comprehensive in approach].
Y1 - 2002
A1 - Brady, George S
A1 - Clauser, Henry R
A1 - Vaccari, John A
PB - {McGraw-Hill}
CY - New York [u.a.]
SN - {007136076X} 9780071360760
UR - http://www.scribd.com/doc/6395226/Materials-Handboook
KW - Brady2002
ER -
TY - JOUR
T1 - Physical properties and atomic arrangements in crystals
JF - Reports on Progress in Physics
Y1 - 2002
A1 - Wooster, W A
VL - 16
UR - http://stacks.iop.org/0034-4885/16/i=1/a=302?key=crossref.19db72555e28e5cd250540ab6a946500
CP - 1
J1 - Rep. Prog. Phys.
KW - wooster1953
ER -
TY - JOUR
T1 - Specifying targets of future research in photovoltaic devices containing pyrite (FeS2) by numerical modelling
JF - Solar Energy Materials and Solar Cells
Y1 - 2002
A1 - Pietro P Altermatt
A1 - Kiesewetter, Tobias
A1 - Ellmer, Klaus
A1 - Tributsch, Helmut
VL - 71
UR - http://linkinghub.elsevier.com/retrieve/pii/S0927024801000538http://api.elsevier.com/content/article/PII:S0927024801000538?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:S0927024801000538?httpAccept=text/plain
CP - 2
J1 - Solar Energy Materials and Solar Cells
KW - altermatt2002
ER -
TY - JOUR
T1 - 24.5% efficiency PERT silicon solar cells on SEH MCZ substrates and cell performance on other SEH CZ and FZ substrates
JF - Solar Energy Materials and Solar Cells
Y1 - 2001
A1 - Zhao, J.
A1 - Aihua Wang
A1 - Martin A Green
VL - 66
N1 -
KW - Zhao2001
ER -
TY - JOUR
T1 - Analytical approximation of effective surface recombination velocity of dielectric-passivated p-type silicon
JF - Solid-State Electronics
Y1 - 2001
A1 - Brody, Jed
A1 - Rohatgi, Ajeet
VL - 45
UR - http://linkinghub.elsevier.com/retrieve/pii/S0038110101001691http://api.elsevier.com/content/article/PII:S0038110101001691?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:S0038110101001691?httpAccept=text/plain
CP - 9
J1 - Solid-State Electronics
KW - Brody2001
ER -
TY - JOUR
T1 - Computing the solar vector
JF - Solar Energy
Y1 - 2001
A1 - Manuel Blanco-Muriel
A1 - Diego C. Alarcón-Padilla
A1 - Teodoro López-Moratalla
A1 - MartÍn Lara-Coira
KW - Solar tracking
VL - 70
UR - http://www.sciencedirect.com/science/article/B6V50-42G6KWJ-5/2/a61a5c50128325f281ca2e33e01de993
N1 -
KW - BlancoMuriel2001
ER -
TY - JOUR
T1 - Computing the solar vector
JF - Solar Energy
Y1 - 2001
A1 - Blanco-Muriel, Manuel
A1 - Alarcón-Padilla, Diego C.
A1 - López-Moratalla, Teodoro
A1 - Lara-Coira, MartÍn
VL - 70
UR - http://linkinghub.elsevier.com/retrieve/pii/S0038092X00001560http://api.elsevier.com/content/article/PII:S0038092X00001560?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:S0038092X00001560?httpAccept=text/plain
CP - 5
J1 - Solar Energy
KW - Blanco2001
ER -
TY - JOUR
T1 - Degradation of carrier lifetime in Cz silicon solar cells
JF - Solar Energy Materials and Solar Cells
Y1 - 2001
A1 - Stefan W. Glunz
A1 - S. Rein
A1 - W. Warta
A1 - J. Knobloch
A1 - W. Wettling
KW - Defects
VL - 65
UR - http://www.sciencedirect.com/science/article/B6V51-419BGN3-11/2/7ba9d473113c89089b6e79c1cd46775f
N1 -
KW - Glunz2001
ER -
TY - JOUR
T1 - High performance light trapping textures for monocrystalline silicon solar cells
JF - Solar Energy Materials and Solar Cells
Y1 - 2001
A1 - Campbell, Patrick
A1 - Martin A Green
AB - Two novel texture schemes for the front of a c-Si silicon wafer solar cell are presented. The “bipyramid” texture is of two inverted pyramids of similar sizes laid out in alternating order. The “patch” texture uses a checkerboard layout of blocks of parallel grooves, with the grooves of alternating blocks perpendicularly oriented to each other. We estimate that these textures, which almost fully trap light for the first six passes through the substrate, can deliver better optical performance than the standard inverted pyramid texture, especially in narrow-band applications.
VL - 65
CP - 1-4
J1 - Solar Energy Materials and Solar Cells
KW - Campbell2001
ER -
TY - JOUR
T1 - Improvements in numerical modelling of highly injected crystalline silicon solar cells
JF - Solar Energy Materials and Solar Cells
Y1 - 2001
A1 - Pietro P Altermatt
A1 - Sinton, R.A.
A1 - G. Heiser
AB - We numerically model crystalline silicon concentrator cells with the inclusion of band gap narrowing (BGN) caused by injected free carriers. In previous studies, the revised room-temperature value of the intrinsic carrier density, ni=1.00x1010cm-3, was inconsistent with the other material parameters of highly injected silicon. In this paper, we show that high-injection experiments can be described consistently with the revised value of ni if free-carrier induced BGN is included, and that such BGN is an important effect in silicon concentrator cells. The new model presented here significantly improves the ability to model highly injected silicon cells with a high level of precision.
VL - 65
UR - http://www.ingentaconnect.com/content/els/09270248/2001/00000065/00000001/art00089" doi = "doi:10.1016/S0927-0248(00)00089-1
KW - Altermatt2001
ER -
TY - Generic
T1 - Natural Sunlight Calibration of Silicon Solar Cells.
T2 - 17th European Photovoltaic Solar Energy Conference
Y1 - 2001
A1 - W. Keogh
A1 - Andrew W Blakers
JA - 17th European Photovoltaic Solar Energy Conference
CY - Munich, Germany
N1 -
KW - Keogh2001
ER -
TY - Generic
T1 - A New Generalized Detailed Balance Formulation to Calculate Solar Cell Efficiency Limits
T2 - 17th European Photovoltaic Solar Energy Conference
Y1 - 2001
A1 - Christiana B Honsberg
A1 - R. Corkish
A1 - S. P. Bremner
JA - 17th European Photovoltaic Solar Energy Conference
N1 -
KW - Honsberg2001
ER -
TY - CONF
T1 - Rapid and Accurate Determination of Series Resistance and Fill Factor Losses in Industrial Silicon Solar Cells
T2 - 17th European Photovoltaic Solar Energy Conference
Y1 - 2001
A1 - S. Bowden
A1 - A. Rohatgi
JA - 17th European Photovoltaic Solar Energy Conference
CY - Munich, Germany
KW - Bowden2001
ER -
TY - JOUR
T1 - On the use of a bias-light correction for trapping effects in photoconductance-based lifetime measurements of silicon
JF - Journal of Applied Physics
Y1 - 2001
A1 - Daniel Macdonald
A1 - Ronald A. Sinton
A1 - Andrés Cuevas
KW - CARRIER DENSITY
KW - carrier lifetime
KW - electron traps
KW - electron-hole recombination
KW - elemental semiconductors
KW - hole traps
KW - photoconductivity
KW - SILICON
KW - solar cells
PB - AIP
VL - 89
UR - http://link.aip.org/link/?JAP/89/2772/1
KW - Macdonald2001
ER -
TY - THES
T1 - Aluminium Back Surface Field in Buried Contact Solar Cells
Y1 - 2000
A1 - Anwar, K.K.
PB - University of New South Wales
VL - Bachelor of Engineering
N1 -
KW - Anwar2000
ER -
TY - JOUR
T1 - Coulomb-enhanced Auger recombination in crystalline silicon at intermediate and high injection densities
JF - Journal of Applied Physics
Y1 - 2000
A1 - Jan Schmidt
A1 - Mark J Kerr
A1 - Pietro P Altermatt
KW - Auger effect
KW - carrier lifetime
KW - electron-hole recombination
KW - elemental semiconductors
KW - photoconductivity
KW - SILICON
PB - AIP
VL - 88
UR - http://link.aip.org/link/?JAP/88/1494/1
KW - Schmidt2000
ER -
TY - Generic
T1 - The Influence of Edge Recombination on a Solar Cell’s IV Curve
T2 - 16th European Photovoltaic Solar Energy Conference
Y1 - 2000
A1 - McIntosh, K. R.
A1 - Christiana B Honsberg
JA - 16th European Photovoltaic Solar Energy Conference
N1 -
KW - McIntosh2000
ER -
TY - Generic
T1 - Mapping of contact resistance and locating shunts on solar cells using Resistance Analysis by Mapping of Potential (RAMP) techniques
T2 - 16th European Photovoltaic Solar Energy Conference
Y1 - 2000
A1 - A.S.H. van der Heide
A1 - et al
JA - 16th European Photovoltaic Solar Energy Conference
CY - Glasgow (United Kingdom)
N1 -
KW - vanderHeide2000
ER -
TY - Generic
T1 - Outdoor measurement of 28% efficiency for a mini-concentrator module
T2 - National Center for Photovoltaics Program Review Meeting
Y1 - 2000
A1 - O’Neil, M.J.
A1 - McDanal, A.J.
JA - National Center for Photovoltaics Program Review Meeting
CY - Denver, USA
N1 -
KW - ONeil2000
ER -
TY - JOUR
T1 - Photoelectrochemical properties of copper oxide thin films coated on an n-Si substrate
JF - Thin Solid Films
Y1 - 2000
A1 - Ki Hyun Yoon
A1 - Woo Jin Choi
A1 - Dong Heon Kang
KW - XPS
AB - The photoelectrochemical properties of the copper oxide thin film coated on the n-type silicon electrode were investigated as a function of film deposition temperature. The variation in the deposition temperature affected the film morphology and the ratio of copper to oxygen. In case of the films deposited below 200°C, the main phase was found to be CuO while the amount of the Cu2O phase increased with further increases in deposition temperature. The n-silicon photoelectrode showed enhanced photocurrent–potential (I–V) properties by forming a copper oxide/n-silicon heterojunction. In particular, the electrode, which mainly consisted of a CuO phase, showed better photoelectrochemical conversion efficiencies compared to the Cu2O phase. This result was explained in terms of the electrical conductance and transmittance of the copper oxide film.
VL - 372
UR - http://www.sciencedirect.com/science/article/pii/S0040609000010580
KW - Yoon2000
ER -
TY - CONF
T1 - A Quasi-Steady-State Open-Circuit Voltage Method for Solar Cell Characterization
T2 - 16th European Photovoltaic Solar Energy Conference
Y1 - 2000
A1 - Sinton, R.A.
A1 - Andrés Cuevas
JA - 16th European Photovoltaic Solar Energy Conference
CY - Glasgow, Scotland
KW - Sinton2000
ER -
TY - Generic
T1 - Simulating Electron-Beam-Induced Current Profiles Across p-n Junctions
T2 - 16h European Solar Energy Conference
Y1 - 2000
A1 - R. Corkish
A1 - Luke, K. L.
A1 - Pietro P Altermatt
A1 - G. Heiser
JA - 16h European Solar Energy Conference
N1 -
KW - Corkish2000
ER -
TY - CONF
T1 - Simulating Electron-Beam-Induced Current Profiles Across p-n Junctions
T2 - Proceedings of the 16h European Solar Energy Conference
Y1 - 2000
A1 - R. Corkish
A1 - Luke, K. L.
A1 - Pietro P Altermatt
A1 - G. Heiser
JA - Proceedings of the 16h European Solar Energy Conference
PB - James and James
CY - Glasgow UK
SN - 9781902916187
N1 -
KW - Corkish2000
ER -
TY - JOUR
T1 - Solar Electricity
Y1 - 2000
A1 - Tomas Markvart
PB - John Wiley & Sons
CY - Chichester, England
SN - 0-471-98853-7
UR - http://www.amazon.com/Solar-Electricity-2nd-Tomas-Markvart/dp/0471988537/ref=sr_1_1?s=books&ie=UTF8&qid=1279647029&sr=1-1
N1 - 1. Electricity from the Sun
2. Solar Radiation
3. Solar Cells
4. Photovoltaic System Engineering
5. Applications
6. Environmental Impacts of Photovoltaics
7. Advanced and Special Topics
Index
KW - Markvart2000
ER -
TY - BOOK
T1 - Solid State Electronic Devices
Y1 - 2000
A1 - Ben G. Streetman
PB - Prentice Hall
N1 -
KW - Streetman2001
ER -
TY - JOUR
T1 - ZnSe thin films grown by chemical vapour deposition for application as buffer layer in CIGSS solar cells
JF - Thin Solid Films
Y1 - 2000
A1 - Rumberg, A.
A1 - Sommerhalter, Ch.
A1 - Toplak, M.
A1 - Jäger-Waldau, A.
A1 - Lux-Steiner, M.Ch.
VL - 361-362
UR - http://linkinghub.elsevier.com/retrieve/pii/S0040609099007907http://api.elsevier.com/content/article/PII:S0040609099007907?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:S0040609099007907?httpAccept=text/plain
J1 - Thin Solid Films
KW - rumberg2000
ER -
TY - JOUR
T1 - Effects of Na on the electrical and structural properties of CuInSe2
JF - Journal of Applied Physics
Y1 - 1999
A1 - Wei, Su-Huai
A1 - Zhang, SB
A1 - Zunger, Alex
VL - 85
KW - wei1999effects
ER -
TY - JOUR
T1 - Generalized analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductors
JF - Journal of Applied Physics
Y1 - 1999
A1 - Henning Nagel
A1 - Christopher Berge
A1 - Armin G Aberle
KW - carrier lifetime
KW - photoconductivity
PB - AIP
VL - 86
UR - http://link.aip.org/link/?JAP/86/6218/1
KW - Nagel1999
ER -
TY - JOUR
T1 - Na incorporation in Mo and CuInSe2 from production processes
JF - Solar energy materials and solar cells
Y1 - 1999
A1 - Rockett, Angus
A1 - Granath, Karin
A1 - Asher, S
A1 - Al Jassim, MM
A1 - Hasoon, F
A1 - Matson, R
A1 - Basol, B
A1 - Kapur, V
A1 - Britt, JS
A1 - Gillespie, T
A1 - others
VL - 59
KW - rockett1999incorporation
ER -
TY - JOUR
T1 - Photoeffects in cobalt doped pyrite (FeS 2 ) films
JF - Solid State Communications
Y1 - 1999
A1 - Thomas, B.
A1 - Ellmer, K.
A1 - Bohne, W.
A1 - Röhrich, J.
A1 - Kunst, M.
A1 - Tributsch, H.
VL - 111
UR - http://linkinghub.elsevier.com/retrieve/pii/S0038109899002136http://api.elsevier.com/content/article/PII:S0038109899002136?httpAccept=text/plainhttp://api.elsevier.com/content/article/PII:S0038109899002136?httpAccept=text/xml
CP - 5
J1 - Solid State Communications
KW - thomas1999
ER -
TY - JOUR
T1 - Photoelectrochemical cells based on chemically deposited nanocrystalline Bi2S3 thin films
JF - Materials Chemistry and Physics
Y1 - 1999
A1 - Mane, R.S.
A1 - Sankapal, B.R.
A1 - Lokhande, C.D.
VL - 60
UR - http://linkinghub.elsevier.com/retrieve/pii/S0254058499000851
CP - 2
J1 - Materials Chemistry and Physics
KW - Mane1999
ER -
TY - Generic
T1 - 19.8% Efficient Multicrystalline Silicon Solar Cells with Honeycomb Textured Front Surface
T2 - 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion
Y1 - 1998
A1 - Zhao, J.
A1 - Wang, A.
A1 - Martin A Green
JA - 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion
CY - Vienna, Austria
N1 -
KW - Zhao1998
ER -
TY - JOUR
T1 - 19.8% efficient "honeycomb" textured multicrystalline and 24.4% monocrystalline silicon solar cells
JF - Applied Physics Letters
Y1 - 1998
A1 - Jianhua Zhao
A1 - Aihua Wang
A1 - Martin A Green
A1 - Francesca Ferrazza
KW - elemental semiconductors
KW - SILICON
KW - solar cells
KW - surface texture
PB - AIP
VL - 73
UR - http://link.aip.org/link/?APL/73/1991/1
KW - Zhao1991
ER -
TY - JOUR
T1 - Copper oxide thin films prepared by chemical vapor deposition from copper dipivaloylmethanate
JF - Solar Energy Materials and Solar Cells
Y1 - 1998
A1 - Maruyama, Toshiro
VL - 56
UR - http://linkinghub.elsevier.com/retrieve/pii/S0927024898001287
CP - 1
J1 - Solar Energy Materials and Solar Cells
KW - Maruyama1998
ER -
TY - Generic
T1 - Improved Performance of Self-Aligned, Selective-Emitter Silicon Solar Cells
T2 - 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion
Y1 - 1998
A1 - Ruby, D. S.
A1 - Yang, P.
A1 - Zaidi, S.
A1 - Brueck, S.
A1 - Roy, M.
A1 - Narayanan, S.
JA - 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion
CY - Vienna, Austria
N1 -
KW - Ruby1998
ER -
TY - JOUR
T1 - Process and characterisation of chemical bath deposited manganese sulphide (MnS) thin films
JF - Thin Solid Films
Y1 - 1998
A1 - Lokhande, C.D.
A1 - Ennaoui, A.
A1 - Patil, P.S.
A1 - Giersig, M.
A1 - Muller, M.
A1 - Diesner, K.
A1 - Tributsch, H.
VL - 330
UR - http://linkinghub.elsevier.com/retrieve/pii/S0040609098005008
CP - 2
J1 - Thin Solid Films
KW - Lokhande1998
ER -
TY - JOUR
T1 - 20,000 PERL silicon cells for the "1996 World Solar Challenge" solar car race
JF - Progress in Photovoltaics: Research and Applications
Y1 - 1997
A1 - Zhao, J.
A1 - Wang, A.
A1 - Yun, F.
A1 - Zhang, G.
A1 - Roche, D.M.
A1 - Wenham, S.R.
A1 - Martin A Green
VL - 5
N1 -
KW - Zhao1997
ER -
TY - CONF
T1 - Heterojunctions based on Cu2ZnSnS4 and Cu2ZnSnSe4 thin films
T2 - 14th European PVSEC
Y1 - 1997
A1 - Friedlmeier, Th Magorian
A1 - Wieser, N
A1 - Walter, Th
A1 - Dittrich, H
A1 - Schock, HW
JA - 14th European PVSEC
KW - friedlmeier1997heterojunctions
ER -
TY - Generic
T1 - Isotropic texturing of multicrystalline silicon wafers with acidic texturing solutions
T2 - Twenty Sixth IEEE Photovoltaic Specialists Conference
Y1 - 1997
A1 - Einhaus, R.
A1 - Vazsonyi, E.
A1 - Szlufcik, J.
A1 - Nijs, J.
A1 - Mertens, R.
JA - Twenty Sixth IEEE Photovoltaic Specialists Conference
CY - New York, NY, USA
N1 -
KW - Einhaus1997
ER -
TY - Generic
T1 - Low-cost industrial technologies of crystalline silicon solar cells
T2 - Proceedings-of-the-IEEE
Y1 - 1997
A1 - Szlufcik, J.
A1 - Sivoththaman, S.
A1 - Nlis, J.F.
A1 - Mertens, R.P.
A1 - Van-Overstraeten, R.
JA - Proceedings-of-the-IEEE
VL - 85
N1 -
KW - Szlufcik1997
ER -
TY - JOUR
T1 - Preparation and evaluation of Cu2ZnSnS4 thin films by sulfurization of E-B evaporated precursors
JF - Solar Energy Materials and Solar Cells
Y1 - 1997
A1 - Hironori Katagiri
A1 - Nobuyuki Sasaguchi
A1 - Shima Hando
A1 - Suguro Hoshino
A1 - Jiro Ohashi
A1 - Takaharu Yokota
KW - EB evaporated precursors
AB - By sulfurization of EB evaporated precursors, CZTS(Cu2ZnSnS4) films could be prepared successfully. This semiconductor does not consist of any rare-metal such as In. The X-ray diffraction pattern of CZTS thin films showed that these films had a stannite structure. This study estimated the optical band gap energy as 1.45 eV. The optical absorption coefficient was in the order of 104cm−1. The resistivity was in the the order of 104 Ω cm and the conduction type was p-type. Fabricated solar cells, Al/ZnO/CdS/CZTS/Mo/Soda Lime Glass, showed an open-circuit voltage up to 400 mV.
VL - 49
UR - http://www.sciencedirect.com/science/article/pii/S0927024897001190
KW - Katagiri1997
ER -
TY - JOUR
T1 - Preparation of Zinc Selenide Thin Films by Electrodeposition Technique for Solar Cell Applications
JF - physica status solidi (a)
Y1 - 1997
A1 - Chandramohan, R.
A1 - Sanjeeviraja, C.
A1 - Mahalingam, T.
VL - 163
CP - 2
J1 - phys. stat. sol. (a)
KW - Chandramohan1997
ER -
TY - JOUR
T1 - Recent progress in MIS solar cells
JF - Progress in Photovoltaics: Research and Applications
Y1 - 1997
A1 - Hezel, R.
VL - 5
N1 -
KW - Hezel1997
ER -
TY - Generic
T1 - A simple processing sequence for selective emitters
T2 - Twenty Sixth IEEE Photovoltaic Specialists Conference
Y1 - 1997
A1 - Horzel, J.
A1 - Szlufcik, J.
A1 - Nijs, J.
A1 - Mertens, R.
JA - Twenty Sixth IEEE Photovoltaic Specialists Conference
CY - New York, NY, USA
N1 -
KW - Horzel1997
ER -
TY - Generic
T1 - Surface texturing using reactive ion etching for multicrystalline silicon solar cells
T2 - Twenty Sixth IEEE Photovoltaic Specialists Conference
Y1 - 1997
A1 - Fukui, K.
A1 - Inomata, Y.
A1 - Shirasawa, K.
JA - Twenty Sixth IEEE Photovoltaic Specialists Conference
CY - New York, NY, USA
N1 -
KW - Fukui1997
ER -
TY - JOUR
T1 - Contactless determination of current–voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data
JF - Applied Physics Letters
Y1 - 1996
A1 - Ronald A. Sinton
A1 - Andrés Cuevas
KW - carrier lifetime
KW - CV CHARACTERISTIC
KW - MINORITY CARRIERS
KW - photoconductivity
KW - SEMICONDUCTOR MATERIALS
KW - SILICON
KW - STEADY – STATE CONDITIONS
PB - AIP
VL - 69
UR - http://link.aip.org/link/?APL/69/2510/1
KW - Sinton1996
ER -
TY - JOUR
T1 - Texturing of polycrystalline silicon
JF - Solar Energy Materials and Solar Cells
Y1 - 1996
A1 - M. J. Stocks
A1 - A. J. Carr
A1 - Andrew W Blakers
VL - 40
UR - http://www.sciencedirect.com/science/article/B6V51-3VTFK7T-57/2/eb36bb8dfafef0de9e83d2f685caf541
KW - Stocks1996
ER -
TY - JOUR
T1 - Chemical deposition of Bi2S3 thin films from thioacetamide bath
JF - Materials Chemistry and Physics
Y1 - 1995
A1 - Desai, J.D.
A1 - Lokhande, C.D.
VL - 41
UR - http://linkinghub.elsevier.com/retrieve/pii/0254058495015388
CP - 2
J1 - Materials Chemistry and Physics
KW - Desai1995
ER -
TY - JOUR
T1 - Optical properties of intrinsic silicon at 300 K
JF - Progress in Photovoltaics: Research and Applications
Y1 - 1995
A1 - Martin A Green
A1 - Keevers, Mark J.
VL - 3
N1 -
KW - Green1995
ER -
TY - BOOK
T1 - SMARTS2: a simple model of the atmospheric radiative transfer of sunshine: algorithms and performance assessment
Y1 - 1995
A1 - Gueymard, Christian
PB - Florida Solar Energy Center Cocoa, FL
KW - gueymard1995
ER -
TY - JOUR
T1 - On some thermodynamic aspects of photovoltaic solar energy conversion
JF - Solar Energy Materials and Solar Cells
Y1 - 1995
A1 - Baruch, P.
A1 - De Vos, A.
A1 - Landsberg, P. T.
A1 - J.E. Parrott
VL - 36
KW - Baruch1995
ER -
TY - JOUR
T1 - Sun’s Role in Warming Is Discounted
JF - Science
Y1 - 1995
A1 - Kerr, R. A.
VL - 268
N1 -
KW - Kerr1995
ER -
TY - JOUR
T1 - 7000 High Efficiency Cells for a Dream
JF - Progress in Photovoltaics: Research and Applications
Y1 - 1994
A1 - Verlinden, P.J.
A1 - Richard M Swanson
A1 - Crane, R.A.
VL - 2
N1 -
KW - Verlinden1994
ER -
TY - JOUR
T1 - Attaining Thirty-Year Photovoltaic System Lifetime
JF - Progress in Photovoltaics: Research and Applications
Y1 - 1994
A1 - Durand, S.
N1 -
KW - Durand1994
ER -
TY - JOUR
T1 - Buried contact concentrator solar cells
JF - Progress in Photovoltaics: Research and Applications
Y1 - 1994
A1 - Jordan, D.
A1 - Nagle, J.P.
VL - 2
N1 -
KW - Jordan1994
ER -
TY - JOUR
T1 - CVD routes to titanium disulfide films
JF - Advanced Materials
Y1 - 1994
A1 - Lewkebandara, T.S.
A1 - Winter, Charles H.
VL - 6
UR - http://doi.wiley.com/10.1002/adma.19940060313
CP - 3
J1 - Adv. Mater.
KW - Lew1994
ER -
TY - JOUR
T1 - Defining terms for crystalline silicon solar cells
JF - Progress in Photovoltaics: Research and Applications
Y1 - 1994
A1 - Basore, P.A.
VL - 2
N1 -
KW - Basore1994
ER -
TY - JOUR
T1 - Departures from the principle of superposition in silicon solar cells
JF - Journal of Applied Physics
Y1 - 1994
A1 - Robinson, S. J.
A1 - Armin G Aberle
A1 - Martin A Green
VL - 76
N1 -
KW - Robinson1994
ER -
TY - JOUR
T1 - Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors
JF - Journal of Applied Physics
Y1 - 1994
A1 - A. B. Sproul
KW - ANALYTICAL SOLUTION
KW - carrier lifetime
KW - DECAY
KW - MINORITY CARRIERS
KW - RECOMBINATION
KW - SEMICONDUCTOR MATERIALS
KW - SURFACES
PB - AIP
VL - 76
UR - http://link.aip.org/link/?JAP/76/2851/1
KW - Sproul1994
ER -
TY - CONF
T1 - Investigation on SnS film by RF sputtering for photovoltaic application
T2 - 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)
Y1 - 1994
A1 - Wei Guang-Pu
A1 - Zhang Zhi-Lin
A1 - Zhao Wei-Ming
A1 - Gao Xiang-Hong
A1 - Chen Wei-Qun
A1 - Tanamura, H.
A1 - Yamaguchi, M.
A1 - Noguchi, H.
A1 - Nagatomo, T.
A1 - Omoto, O.
JA - 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)
PB - IEEE
CY - Waikoloa, HI, USA
UR - http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=519977
KW - Pu1994
ER -
TY - JOUR
T1 - Temperature dependence of the optical absorption edge of pyrite FeS 2 thin films
JF - Journal of Physics: Condensed Matter
Y1 - 1994
A1 - Heras, C de las
A1 - Ferrer, I J
A1 - Sanchez, C
VL - 6
UR - http://stacks.iop.org/0953-8984/6/i=46/a=033?key=crossref.61b976ff921e0c9e9564b77a55dabd35
CP - 46
J1 - J. Phys.: Condens. Matter
KW - heras1994
ER -
TY - BOOK
T1 - {VLSI} Fabrication Principles: Silicon and Gallium Arsenide, 2nd Edition
Y1 - 1994
A1 - Ghandhi, Sorab K.
PB - Wiley-Interscience
SN - 0471580058
KW - Ghandi1994
ER -
TY - JOUR
T1 - Accurate measurements of the silicon intrinsic carrier density from 78 to 340 K
JF - Journal of Applied Physics
Y1 - 1993
A1 - Misiakos, Konstantinos
A1 - Tsamakis, Dimitris
AB - The intrinsic carrier density in silicon has been measured by a novel technique based on low‐frequency capacitance measurements of a p+‐i‐n+ diode biased in high injection. The major advantage of the method is its insensitivity to uncertainties regarding the exact values of the carrier mobilities, the recombination parameters, and the doping density. The intrinsic carrier density was measured in the temperature range from 78 to 340 K. At 300 K the value of ni was found to be (9.7±0.1)×10^9 cm−3.
VL - 74
CP - 5
J1 - J. Appl. Phys.
KW - Misiakos93
ER -
TY - JOUR
T1 - Choice of an equivalent black body solar temperature
JF - Solar Energy
Y1 - 1993
A1 - J.E. Parrott
VL - 51
UR - http://www.sciencedirect.com/science/article/B6V50-497TD5S-1HX/2/5b4be52ce15a1f2f2b664fe8bbb37cb6
N1 -
KW - Parrott1993
ER -
TY - JOUR
T1 - Electronic, optical, and structural properties of some wurtzite crystals
JF - Physical Review B
Y1 - 1993
A1 - Xu, Yong-Nian
A1 - Ching, W.
VL - 48
UR - http://link.aps.org/doi/10.1103/PhysRevB.48.4335
CP - 7
J1 - Phys. Rev. B
KW - Xu1993
ER -
TY - CONF
T1 - A New Method for the Accurate Measurements of the Lumped Series Resistance of Solar Cells
T2 - Proceedings of the 23rd IEEE Photovoltaic Specialists Conference
Y1 - 1993
A1 - Armin G Aberle
A1 - Wenham, S.R.
A1 - Martin A Green
JA - Proceedings of the 23rd IEEE Photovoltaic Specialists Conference
CY - Louisville, KY
KW - Aberle1993
ER -
TY - JOUR
T1 - Structure and Composition of Chemically Deposited Thin Films of Bismuth Sulfide and Copper Sulfide Effect on Optical and Electrical Properties
JF - Journal of The Electrochemical Society
Y1 - 1993
A1 - Nair, P. K.
A1 - Nair, M. T. S.
A1 - Pathirana, Hema M. K. K.
A1 - Zingaro, Ralph A.
A1 - Meyers, Edward A.
KW - annealing
KW - bismuth compounds
KW - copper compounds
KW - optical properties
KW - Thin films
AB - Chemically deposited thin films of bismuth sulfide (0.13 μm) and copper sulfide (0.3 μm) and copper sulfide films deposited on bismuth sulfide have been studied so as to obtain information about their structure, composition, thermal stability, and their effect on the optical and electrical properties. The studies establish that bismuth sulfide thin films become crystalline upon air annealing near {200°C} and remain stable up to {300°C.} But oxygen chemisorption reduces the photo‐ and dark conductivities of the films annealed at {300°C.} The studies establish that the copper sulfide films are (covellite), which is stable up to {220°C.} However, films deposited on bismuth sulfide substrate films retain useful electrical and optical properties for annealing temperatures up to {∼300°C.}
VL - 140
UR - http://jes.ecsdl.org/content/140/3/754
KW - Nair1993
ER -
TY - JOUR
T1 - The crystal structures of CuInSe2 and CuInTe2
JF - Materials Research Bulletin
Y1 - 1992
A1 - Knight, K.S.
VL - 27
UR - http://linkinghub.elsevier.com/retrieve/pii/002554089290209Ihttp://api.elsevier.com/content/article/PII:002554089290209I?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:002554089290209I?httpAccept=text/plain
CP - 2
J1 - Materials Research Bulletin
KW - Knight2003
ER -
TY - JOUR
T1 - Lattice vibrations of CuInSe2 and CuGaSe2 by Raman microspectrometry
JF - Journal of Applied Physics
Y1 - 1992
A1 - Rincón, C.
A1 - Ramírez, F. J.
AB - The vibrational spectra of the chalcopyrite compounds CuInSe2 and CuGaSe2 have been studied by Raman microspectrometry. This technique is very useful in the present case where large single crystals are not generally available. The results have been used to resolve discrepancies in the reported data on the vibrational spectrum of CuInSe2.
VL - 72
UR - 4321-4324
KW - Rincon1992
ER -
TY - JOUR
T1 - A simple and effective light trapping technique for polycrystalline silicon solar cells
JF - Solar Energy Materials and Solar Cells
Y1 - 1992
A1 - G. Willeke
A1 - H. Nussbaumer
A1 - H. Bender
A1 - E. Bucher
VL - 26
UR - http://www.sciencedirect.com/science/article/B6V51-47XG9S8-45/2/acfac830ed036bd52484e2951d6f9c51
KW - Willeke1992
ER -
TY - BOOK
T1 - Solar Cells - Operating Principles, Technology and System Application
Y1 - 1992
A1 - Martin A Green
PB - University of NSW
CY - Kensington, Australia
N1 -
KW - Green1992
ER -
TY - Generic
T1 - Buried contact concentrator solar cells
T2 - Twenty Second IEEE Photovoltaic Specialists Conference
Y1 - 1991
A1 - Wohlgemuth, J.H.
A1 - Narayanan, S.
JA - Twenty Second IEEE Photovoltaic Specialists Conference
VL - 1
N1 -
KW - Wohlgemuth1991
ER -
TY - Generic
T1 - Decline of the Carrisa Plains PV Power Plant: The Impact of Concentrating Sunlight on Flat Plates
T2 - 22nd IEEE Photovoltaic Specialists Conference
Y1 - 1991
A1 - Wenger, H.J.
A1 - Schaefer, J.
A1 - Rosenthal, A.
A1 - Hammond, B.
A1 - Schlueter, L.
JA - 22nd IEEE Photovoltaic Specialists Conference
CY - Las Vegas, USA
N1 -
KW - Wenger1991
ER -
TY - JOUR
T1 - Improved value for the silicon intrinsic carrier concentration from 275 to 375 K
JF - Journal of Applied Physics
Y1 - 1991
A1 - A. B. Sproul
A1 - Martin A Green
KW - CARRIER DENSITY
KW - IV CHARACTERISTIC
KW - JUNCTION DIODES
KW - MEDIUM TEMPERATURE
KW - MINORITY CARRIERS
KW - SANDIA LABORATORIES
KW - SILICON
KW - SILICON DIODES
KW - TEMPERATURE DEPENDENCE
PB - AIP
VL - 70
UR - http://link.aip.org/link/?JAP/70/846/1
N1 -
KW - Sproul1991
ER -
TY - JOUR
T1 - Improved value for the silicon intrinsic carrier concentration from 275 to 375 K
JF - Journal of Applied Physics
Y1 - 1991
A1 - A. B. Sproul
A1 - Martin A Green
VL - 70
N1 -
KW - Sproul1991
ER -
TY - Generic
T1 - Improvements in Silicon Solar Cell Performance
T2 - 22nd IEEE PV Specialists Conference
Y1 - 1991
A1 - Zhao, J.
A1 - Wang A.
A1 - Dai, X.
A1 - Martin A Green
A1 - Wenham, S.R.
JA - 22nd IEEE PV Specialists Conference
N1 -
KW - Zhao1991
ER -
TY - JOUR
T1 - Optical properties of ZnSe
JF - Physical Review B
Y1 - 1991
A1 - Adachi, Sadao
A1 - Taguchi, Tsunemasa
VL - 43
UR - https://link.aps.org/doi/10.1103/PhysRevB.43.9569http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.43.9569/fulltexthttp://link.aps.org/article/10.1103/PhysRevB.43.9569
CP - 12
J1 - Phys. Rev. B
KW - adachi1991
ER -
TY - BOOK
T1 - The Role of Photovoltaics in Reducing Greenhouse Gas Emissions
Y1 - 1991
A1 - Andrew W Blakers
A1 - Martin A Green
A1 - T. Leo
A1 - H. Outhred
A1 - B. Robins
PB - Australian Government Publishing Service
CY - Canberra
N1 -
KW - Blakers1991
ER -
TY - Generic
T1 - A Sensitivity Analysis of the Spectral Mismatch Correction Procedure Using Wavelength-Dependent Error Sources
T2 - 22nd IEEE PV Specialists Conference
Y1 - 1991
A1 - King, D.
A1 - Hansen, B.
JA - 22nd IEEE PV Specialists Conference
N1 -
KW - King1991
ER -
TY - Generic
T1 - 18% efficient polycrystalline silicon solar cells
T2 - Twenty First IEEE Photovoltaic Specialists Conference
Y1 - 1990
A1 - Narayanan, S.
A1 - Zolper, J.
A1 - Yun, F.
A1 - Wenham, S.R.
A1 - A. B. Sproul
A1 - Chong,C.M.
A1 - Martin A Green
JA - Twenty First IEEE Photovoltaic Specialists Conference
VL - 1
N1 -
KW - Narayanan1990
ER -
TY - JOUR
T1 - Improved value for the silicon intrinsic carrier concentration at 300 K
JF - Applied Physics Letters
Y1 - 1990
A1 - A. B. Sproul
A1 - Martin A Green
A1 - Zhao, J.
VL - 57
N1 -
KW - Sproul1990
ER -
TY - JOUR
T1 - Minority-carrier transport parameters in n-type silicon
JF - IEEE Transactions on Electron Devices
Y1 - 1990
A1 - Wang, C.H.
A1 - Misiakos, K.
A1 - Neugroschel, A.
VL - 37
N1 -
KW - Wang1990
ER -
TY - JOUR
T1 - Modeling daylight availability and irradiance components from direct and global irradiance
JF - Solar Energy
Y1 - 1990
A1 - Richard Perez
A1 - Pierre Ineichen
A1 - Robert Seals
A1 - Joseph Michalsky
A1 - Ronald Stewart
VL - 44
UR - http://www.sciencedirect.com/science/article/B6V50-497T9KG-S0/2/034fdf1417cea3a44d8509fe805f679e
N1 -
KW - Perez1990
ER -
TY - JOUR
T1 - Modeling daylight availability and irradiance components from direct and global irradiance
JF - Solar Energy
Y1 - 1990
A1 - Richard Perez
A1 - Pierre Ineichen
A1 - Robert Seals
A1 - Joseph Michalsky
A1 - Ronald Stewart
AB - This paper presents the latest versions of several models developed by the authors to predict short time-step solar energy and daylight availability quantities needed by energy system modelers or building designers. The modeled quantities are global, direct and diffuse daylight illuminance, diffuse irradiance and illuminance impinging on tilted surfaces of arbitrary orientation, sky zenith luminance and sky luminance angular distribution. All models are original except for the last one which is extrapolated from current standards. All models share a common operating structure and a common set of input data: Hourly (or higher frequency) direct (or diffuse) and global irradiance plus surface dew point temperature. Key experimental observations leading to model development are briefly reviewed. Comprehensive validation results are presented. Model accuracy, assessed in terms of root-mean-square and mean bias errors, is analyzed both as a function of insolation conditions and site climatic environment.
VL - 44
UR - http://www.sciencedirect.com/science/article/B6V50-497T9KG-S0/2/034fdf1417cea3a44d8509fe805f679e
N1 -
KW - Perez1990
ER -
TY - JOUR
T1 - Numerical modeling of textured silicon solar cells using PC-1D
JF - Electron Devices, IEEE Transactions on
Y1 - 1990
A1 - Basore, P.A.
KW - elemental semiconductors
KW - finite element analysis
KW - finite-element program
KW - front-surface recombination
KW - heavy doping
KW - high-level injection
KW - internal performance
KW - light trapping
KW - microcomputer applications
KW - modeling semiconductor devices
KW - multidimensional effects
KW - nonplanar structures
KW - numerical models
KW - oblique photon path angles
KW - PC-1D
KW - PC-1D Version 2
KW - personal computers
KW - semiconductor device models
KW - semiconductors
KW - Si
KW - SILICON
KW - solar cells
KW - spectral quantum efficiency data
KW - textured solar cells
KW - transients
AB - PC-1D is a quasi-one-dimensional finite-element program for modeling semiconductor devices on personal computers. The program offers solar cell researchers a convenient user interface with the ability to address complex issues associated with heavy doping, high-level injection, nonplanar structures, and transients. The physical and numerical models used in PC-1D Version 2 that make it possible to approximate the multidimensional effects found in textured crystalline silicon solar cells, including the effects of increased front-surface recombination, oblique photon path angles, and light trapping, are presented. As an example of how the model can be applied, PC-1D is used to investigate the interpretation of spectral quantum efficiency data as a tool for diagnosing the internal performance of textured silicon solar cells
VL - 37
KW - basore1990
ER -
TY - Generic
T1 - Photovoltaics: Coming of Age
T2 - 21st IEEE Photovoltaic Specialists Conference
Y1 - 1990
A1 - Martin A Green
AB - The history of photovoltaic development is reviewed. An outline of the potential of the technology as the author views it is given. The challenge to be met to reach this potential is to develop high-efficiency technologies which can be produced at low cost. Three factors suggest this is possible. The first is the latent efficiency still to be recovered with even the most highly developed cell technologies. The second is the recent progress with tandem cells, which suggests that most of the 30-40% efficiency advantage over single-junction devices will eventually be realized. Tandem cells are likely to offer cost advantages in very high volume production. The third is the pyramid of possibilities, the wide range of semiconductors which still have to be evaluated for their photovoltaic potential.
JA - 21st IEEE Photovoltaic Specialists Conference
CY - Orlando, USA
UR - http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=111582
N1 -
KW - Green1990
ER -
TY - JOUR
T1 - 16.7% efficient, laser textured, buried contact polycrystalline silicon solar cell
JF - Applied Physics Letters
Y1 - 1989
A1 - John C. Zolper
A1 - Srinivasamohan Narayanan
A1 - Stuart R. Wenham
A1 - Martin A Green
VL - 55
UR - http://apl.aip.org/applab/v55/i22/p2363_s1
KW - Zolper1989
ER -
TY - JOUR
T1 - Revised optical air mass tables and approximation formula
JF - Applied Optics
Y1 - 1989
A1 - Fritz Kasten
A1 - Andrew T. Young
PB - OSA
VL - 28
UR - http://ao.osa.org/abstract.cfm?URI=ao-28-22-4735
N1 -
KW - Kasten89
ER -
TY - ABST
T1 - Buried contact solar cell
Y1 - 1988
A1 - Stuart R. Wenham
A1 - Martin A Green
UR - http://www.freepatentsonline.com/4726850.html
N1 -
KW - Wenham1988
ER -
TY - JOUR
T1 - Electrical and Optical Properties of Stannite-Type Quaternary Semiconductor Thin Films
JF - Japanese Journal of Applied Physics
Y1 - 1988
A1 - Ito, Kentaro
A1 - Nakazawa, Tatsuo
VL - 27
UR - http://stacks.iop.org/1347-4065/27/2094
CP - Part 1, No. 11
J1 - Jpn. J. Appl. Phys.
KW - ito1998
ER -
TY - Generic
T1 - SOLAR SIMULATION - PROBLEMS AND SOLUTIONS
T2 - 20th IEEE PV Specialists Conference
Y1 - 1988
A1 - Emery, K.
A1 - Myers, D.
A1 - Rummel, S.
JA - 20th IEEE PV Specialists Conference
N1 -
KW - Emery1988
ER -
TY - JOUR
T1 - Analysis of the interaction of a laser pulse with a silicon wafer: Determination of bulk lifetime and surface recombination velocity
JF - Journal of Applied Physics
Y1 - 1987
A1 - Keung L. Luke
A1 - Li-Jen Cheng
KW - carrier lifetime
KW - LASERRADIATION HEATING
KW - MINORITY CARRIERS
KW - RECOMBINATION
KW - SILICON
KW - SILICON SOLAR CELLS
KW - SURFACE PROPERTIES
KW - THEORETICAL DATA
KW - VELOCITY
KW - WAFERS
PB - AIP
VL - 61
UR - http://link.aip.org/link/?JAP/61/2282/1
KW - Luke1987
ER -
TY - JOUR
T1 - Light trapping properties of pyramidally textured surfaces
JF - Journal of Applied Physics
Y1 - 1987
A1 - Campbell, Patrick
A1 - Martin A Green
VL - 62
CP - 1
J1 - J. Appl. Phys.
KW - Campbell1987
ER -
TY - JOUR
T1 - Recombination in highly injected silicon
JF - Electron Devices, IEEE Transactions on
Y1 - 1987
A1 - Sinton, R.A.
A1 - Richard M Swanson
VL - 34
N1 -
KW - Sinton1987
ER -
TY - JOUR
T1 - The diode quality factor of solar cells under illumination
JF - Journal of Physics D: Applied Physics
Y1 - 1986
A1 - Mialhe, P
A1 - Charles, J P
A1 - Khoury, A
A1 - Bordure, G
AB - A review of the methods of determination of solar cell quality factors is discussed from a theoretical point of view; experimental results are compared. Temperature effects, light and bias dependencies of the parameters and the models are considered in order to specify the limits of application of each method.
VL - 19
UR - https://iopscience.iop.org/article/10.1088/0022-3727/19/3/018http://stacks.iop.org/0022-3727/19/i=3/a=018/pdf
CP - 3
J1 - J. Phys. D: Appl. Phys.
KW - Mialhe1986
ER -
TY - JOUR
T1 - Flat-Plate Solar Array Project Final Report
Y1 - 1986
A1 - Ross, R.G. Jnr.
A1 - Smokler, M.I.
PB - Jet Propulsion Laboratory
N1 -
KW - Ross1986
ER -
TY - JOUR
T1 - Simple Solar Spectral Model for Direct and Diffuse Irradiance on Horizontal and Tilted Planes at the Earth's Surface for Cloudless Atmospheres
JF - Journal of Climate and Applied Meteorology
Y1 - 1986
A1 - Bird, Richard E.
A1 - Riordan, Carol
VL - 25
UR - http://journals.ametsoc.org/doi/abs/10.1175/1520-0450%281986%29025%3C0087%3ASSSMFD%3E2.0.CO%3B2
CP - 1
J1 - J. Climate Appl. Meteor.
KW - Bird1986
ER -
TY - JOUR
T1 - Calculation of surface generation and recombination velocities at the Si-SiO2 interface
JF - Journal of Applied Physics
Y1 - 1985
A1 - Eades, Wendell D.
A1 - Richard M Swanson
VL - 58
N1 -
KW - Eades1985
ER -
TY - BOOK
T1 - Perception
Y1 - 1985
A1 - Sekuler, R.
A1 - Blake, R.
PB - Alfred A. Knopf Inc
CY - New York
N1 -
KW - Sekuler1985
ER -
TY - BOOK
T1 - QED : The Strange Theory of Light and Matter
T2 - Princeton University Press, Princeton NJ
Y1 - 1985
A1 - Feynman, R. P.
JA - Princeton University Press, Princeton NJ
N1 -
KW - Feynman1985
ER -
TY - JOUR
T1 - On the Effect of Impurities on the Photovoltaic Behavior of Solar-Grade Silicon
JF - Journal of The Electrochemical Society
Y1 - 1984
A1 - Pizzini, S.
A1 - Calligarich, C.
AB - The electrical and photovoltaic properties of partially compensated p‐type silicon samples have been investigated in order to understand the influence of the contemporaneous presence of donors and acceptors on the behavior of majority and minority carriers. It has been shown that the majority carrier properties are only slightly influenced by the presence of donors in p‐type samples and that the minority carrier properties depend on the excess acceptor concentration up to an excess donor concentration close to Formula . A theoretical explanation of these features has been proposed, on the base of the Shockley‐Read‐Hall model of recombination at shallow traps and donor‐acceptor pairs formation.
VL - 131
UR - http://jes.ecsdl.org/cgi/doi/10.1149/1.2116033
CP - 9
J1 - J. Electrochem. Soc.
KW - 560
ER -
TY - JOUR
T1 - Limiting Efficiency of Silicon Solar Cells
JF - IEEE TRANSACTIONS ON ELECTRON DEVICES
Y1 - 1984
A1 - T. Tiedje
A1 - E Yablonovich
A1 - G.D. Cody
A1 - B.G. Brooks
VL - ED-31
N1 -
KW - Tiedje1984
ER -
TY - BOOK
T1 - Photovoltaics for Residential Applications
Y1 - 1984
A1 - SERI
PB - Solar Energy Research Institute
CY - Golden, Colorado
N1 -
KW - seri1984
ER -
TY - JOUR
T1 - Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon
JF - IEEE Transactions on Electron Devices
Y1 - 1983
A1 - G. Masetti
A1 - M. Severi
A1 - S. Solmi
KW - arsenic
KW - boron
KW - CARRIER DENSITY
KW - carrier mobility
KW - digital simulation
KW - elemental semiconductors
KW - heavily doped semiconductors
KW - phosphorus
KW - SILICON
AB - New carrier mobility data for both arsenic- and boron-doped silicon are presented in the high doping range. The data definitely show that the electron mobility in As-doped silicon is significantly lower than in P-doped silicon for carrier concentrations higher than 1019 cm-3. By integrating these data with those previously published, empirical relationships able to model the carrier mobility against carrier concentration in the whole experimental range examined to date (about eight decades in concentration) for As-, P-, and B-doped silicon are derived. Different parameters in the expression for the n-type dopants provide differentiation between the electron mobility in As- and P-doped silicon. Finally, it is shown that these new expressions, once implemented in the {SUPREM} {II} process simulator, lead to reduced errors in the simulation of the sheet resistance values
VL - ED-30
N1 - Copyright 1983, {IEE}
KW - Masetti1983
ER -
TY - JOUR
T1 - On Phosphorus Diffusion in Silicon
JF - On Phosphorus Diffusion in Silicon
Y1 - 1983
A1 - S.M. Hu
A1 - P. Fahey
A1 - P. Sutton
VL - 54
N1 -
KW - Hu1983-2
ER -
TY - BOOK
T1 - Solar Cells: From Basic to Advanced Systems
Y1 - 1983
A1 - Hu, C
A1 - White, R.M.
PB - McGraw-Hill
CY - New York
N1 -
KW - Hu1983
ER -
TY - CHAP
T1 - Voltaic Cell, Chapter XIV
Y1 - 1983
A1 - P. Benjamin
PB - Wiley
CY - New York
N1 -
KW - Benjamin1983
ER -
TY - JOUR
T1 - Accuracy of Analytical Expressions for Solar Cell Fill Factors
JF - Solar Cells
Y1 - 1982
A1 - Martin A Green
VL - 7
N1 -
KW - Green1982
ER -
TY - JOUR
T1 - Intensity Enhancement in Textured Optical Sheets for Solar Cells
JF - IEEE Transactions on Electron Devices
Y1 - 1982
A1 - E Yablonovich
A1 - G.D. Cody
VL - ED-29
N1 -
KW - Yablonovich1982
ER -
TY - JOUR
T1 - Solar Cells: Operating Principles, Technology and System Applications
Y1 - 1982
A1 - Martin A Green
AB -
PB - Prentice-Hall
SN - 0-85823-580-3
N1 - 1. Solar Cells and Sunlight
2. Review of Semiconductor Properties
3. Generation, Recombination and the Basic Equation of Device Physics
4. p-n Junction Diodes
5. Efficiency Limits, Losses and Measurement
6. Standard Silicon Solar Cell Technology
7. Improved Silicon Cell Technology
8. Design of Silicon Solar Cells
9. Other Device Structures
10. Other Semiconductor Materials
11.Concentrating Systems
12. Photovoltaic Systems: Components and Applications
13. Design of Stand-alone Systems
14. Residential and Centralised Photovoltaic Power Systems
Appendix A: Physical Constants
Appendix B: Selected Properties of Silicon
Appendix C: List of Symbols
KW - Green1982book
ER -
TY - JOUR
T1 - The Standardization of Time: A Sociohistorical Perspective
JF - American Journal of Sociology
Y1 - 1982
A1 - Zerubavel, Eviatar
AB - In order to clarify the fundamental distinction between the psychological and sociological perspectives on temporality, this paper explores the distinctly social process of establishing a standard time-reckoning framework. The paper examines the introduction of Greenwich Mean Time to Britain, the establishment of the American railway time-zone system, and the almost universal enforcement of the modern international standard-time zone system. The rise of standard time is viewed within the context of (a) the establishment of national and international communication networks following the introduction of railway transportation and telegraphic communication (which explains the need to synchronize different communities and countries with one another) and (b) the rise of rationalism (which is responsible for the dissociation of standard time from nature). The paper also examines the various grounds on which standard time has been opposed, as well as the relevance of the time-zone system to the development of modern Western "organic" ties of interdependence and complementary differentiation.
VL - 88
UR - https://doi.org/10.1086/227631
KW - Zerubavel
ER -
TY - ABST
T1 - The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon
Y1 - 1981
A1 - W R Thurber
A1 - Mattis
A1 - Liu
A1 - Filliben
PB - U.S. Department of Commerce National Bureau of Standards
N1 -
KW - Thurber1981
ER -
TY - JOUR
T1 - Solar cell fill factors: General graph and empirical expressions
JF - Solid-State Electronics
Y1 - 1981
A1 - Martin A Green
VL - 24
N1 -
KW - Green1981
ER -
TY - Generic
T1 - Flat-Plate Photovoltaic Array Design Optimization
T2 - 14th IEEE Photovoltaic Specialists Conference
Y1 - 1980
A1 - Ross, R.G.
JA - 14th IEEE Photovoltaic Specialists Conference
CY - San Diego, CA
N1 -
KW - Ross1980
ER -
TY - JOUR
T1 - Resistivity-Dopant Density Relationship for Boron-Doped Silicon
JF - Journal of The Electrochemical Society
Y1 - 1980
A1 - W R Thurber
A1 - R. L. Mattis
A1 - Y. M. Liu
A1 - J. J. Filliben
KW - boron
KW - electrical resistivity
KW - Hall effect
KW - hole density
KW - semiconductor doping
KW - SILICON
PB - ECS
VL - 127
UR - http://link.aip.org/link/?JES/127/2291/1
N1 -
KW - Thurber1980boron
ER -
TY - JOUR
T1 - Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon
JF - Journal of The Electrochemical Society
Y1 - 1980
A1 - W R Thurber
A1 - R. L. Mattis
A1 - Y. M. Liu
A1 - J. J. Filliben
KW - density
KW - electrical resistivity
KW - electron mobility
KW - Hall effect
KW - neutron activation analysis
KW - phosphorus
KW - photometry
KW - semiconductor doping
KW - SILICON
PB - ECS
VL - 127
UR - http://link.aip.org/link/?JES/127/1807/1
KW - Thurber1980phos
ER -
TY - CHAP
T1 - Solar Energy Utilisation
Y1 - 1980
A1 - G.D. Rai
PB - Khanna Publishers
N1 -
KW - Rai1980
ER -
TY - JOUR
T1 - Application of the superposition principle to solar-cell analysis
JF - IEEE Transactions on Electron Devices
Y1 - 1979
A1 - F.A. Lindholm
A1 - Fossum, J.G.
A1 - E.L. Burgess
AB - The principle of superposition is used to derive from fundamentals the widely used shifting approximation that the current-voltage characteristic of an illuminated solar cell is the dark current-voltage characteristic shifted by the short-circuit photocurrent. Thus the derivation requires the linearity of the boundary-value problems that underlie the electrical characteristics. This focus on linearity defines the conditions that must hold if the shifting approximation is to apply with good accuracy. In this regard, if considerable photocurrent and considerable dark thermal recombination current both occur within the junction space-charge region, then the shifting approximation is invalid. From a rigorous standpoint, it is invalid also if low-injection concentrations of holes and electrons are not maintained throughout the quasi-neutral regions. The presence of sizable series resistance also invalidates the shifting approximation. Methods of analysis are presented to treat these cases for which shifting is not strictly valid. These methods are based on an understanding of the physics of cell operation. This understanding is supported by laboratory experiments and by exact computer solution of the relevant boundary-value problems. For the case of high injection in the base region, the method of analysis employed accurately yields the dependence of the open-circuit voltage on the short-circuit current (or the illumination level).
VL - 26
KW - Lindholm1979
ER -
TY - JOUR
T1 - Electrical Properties of p- and n-Type CuInSe 2 Single Crystals
JF - Japanese Journal of Applied Physics
Y1 - 1979
A1 - Irie, Taizo
A1 - Endo, Saburo
A1 - Kimura, Shigeo
VL - 18
UR - http://jjap.jsap.jp/link?JJAP/18/1303/
CP - 7
J1 - Jpn. J. Appl. Phys.
KW - Irie1979
ER -
TY - JOUR
T1 - Hall coefficient and reflectivity evidence that TiS 2 is a semiconductor
JF - Journal of Physics C: Solid State Physics
Y1 - 1979
A1 - E M Logothetis
A1 - W J Kaiser
A1 - C A Kukkonen
A1 - S P Faile
A1 - R Colella
A1 - J Gambold
AB - A series of measurements of the Hall coefficient, infrared reflectivity, thermoelectric power and electrical resistivity of Ti 1+x S 2 single crystals with various degrees of stoichiometry is described, where, for the first time, each measurement was made on the same crystal (or crystals from the same batch). None of these measurements taken alone can distinguish between the semimetallic or semiconducting models of TiS 2 . However, by making all four measurements on each sample, it has been possible to establish correlations between the results for different samples. It was found that the product of the Hall coefficient and the square of the plasma frequency is the same for all samples, a result that is consistent with a semiconductor model, but is inconsistent with a semimetal. Nevertheless the most stoichiometric samples remain metallic with electron concentrations of 2*10 20 cm -3 . It was also found that the resistivity data cannot be explained by carrier-carrier or optical phonon scattering. Therefore, both the source of the residual conduction electrons and the scattering mechanism in TiS 2 remain unknown.
VL - 12
UR - http://stacks.iop.org/0022-3719/12/i=13/a=007
KW - Logothetis1979
ER -
TY - JOUR
T1 - Hall coefficient and reflectivity evidence that TiS 2 is a semiconductor
JF - Journal of Physics C: Solid State Physics
Y1 - 1979
A1 - Logothetis, E M
A1 - W J Kaiser
A1 - Kukkonen, C A
A1 - S P Faile
A1 - Colella, R
A1 - J Gambold
VL - 12
UR - http://stacks.iop.org/0022-3719/12/i=13/a=007?key=crossref.7b34e84721f0d96f60dce7c3e44ba4c7
CP - 13
J1 - J. Phys. C: Solid State Phys.
KW - Logothetis1979a
ER -
TY - JOUR
T1 - Solar Power for Telecommunications
JF - The Telecommunication Journal of Australia
Y1 - 1979
A1 - Mack, M.
VL - 29
N1 -
KW - Mack1979
ER -
TY - ABST
T1 - United States Patent: 4137123 - Texture etching of silicon: method
Y1 - 1979
A1 - William L. Bailey
A1 - Michael G. Coleman
A1 - Cynthia B. Harris
A1 - Israel A. Lesk
AB - A surface etchant for silicon comprising an anisotropic etchant containing silicon is disclosed. The etchant provides a textured surface of randomly spaced and sized pyramids on a silicon surface. It is particularly useful in reducing the reflectivity of solar cell surfaces.
UR - http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=32&f=G&l=50&co1=AND&d=PTXT&s1=4,137,123&OS=4,137,123&RS=4,137,123
KW - Bailey1979
ER -
TY - JOUR
T1 - Electrical properties of α-MnS
JF - Journal of Physics and Chemistry of Solids
Y1 - 1978
A1 - Heikens, H.H.
A1 - Van Bruggen, C.F.
A1 - Haas, C.
AB - Electrical data including thermoelectric power, Hall effect and resistivity on iodine-grown crystals of p-type α-MnS are reported. A study of the temperature dependences reveals that the conductivity occurs by holes in a 3d-band (Mn3+) and that the mobility of the holes is not thermally activated. Photoelectron spectra confirm the 3d character of the top of the valence band. Accurate analysis of the electrical data gives a satisfactory explanation of the extrinsic and intrinsic behaviour; the simultaneous presence of donors (substitutional iodine) and acceptors (manganese vacancies) is responsible for the observed phenomena.
VL - 39
UR - http://linkinghub.elsevier.com/retrieve/pii/0022369778901415
CP - 8
J1 - Journal of Physics and Chemistry of Solids
KW - Heikens1978
ER -
TY - Generic
T1 - Optimizing Solar Cell Performance by Simultaneous Consideration of Grid Pattern Design and Interconnect Configurations
T2 - 13th IEEE Photovoltaic Specialists Conference
Y1 - 1978
A1 - H.B. Serreze
JA - 13th IEEE Photovoltaic Specialists Conference
CY - Washington, D.C., USA
N1 -
KW - Serreze1978
ER -
TY - JOUR
T1 - Electronic processes at grain boundaries in polycrystalline semiconductors under optical illumination
JF - IEEE Transactions on Electron Devices
Y1 - 1977
A1 - Card, H.C.
A1 - Yang, E.S.
VL - ED-24
N1 -
KW - Card1977
ER -
TY - JOUR
T1 - Physical operation of back-surface-field silicon solar cells
JF - IEEE Transactions on Electron Devices
Y1 - 1977
A1 - Fossum, J.G.
AB - Using exact numerical solutions of carrier transport in the back-surface-field silicon solar cell both for guidance and for verification, the physical mechanisms effective in this device are identified and explained. Concise analytical descriptions of the cell performance, based on the pertinent device physics, are formulated.
VL - 24
KW - Fossum1977
ER -
TY - BOOK
T1 - Applied Solar Energy
Y1 - 1976
A1 - Meinel, A.B.
A1 - Meinel, M.P.
PB - Addison Wesley Publishing Co.
N1 -
KW - Meinel1976
ER -
TY - JOUR
T1 - The electrical properties of zinc selenide
JF - Journal of Physics D: Applied Physics
Y1 - 1976
A1 - Jones, G
A1 - Woods, J
VL - 9
UR - http://stacks.iop.org/0022-3727/9/i=5/a=013?key=crossref.d0fe6103237fcfbfd2221126652bc33b
CP - 5
J1 - J. Phys. D: Appl. Phys.
KW - jones1976
ER -
TY - Generic
T1 - Historical Development of Solar Cells
Y1 - 1976
A1 - M. Wolf
PB - IEEE Press
N1 -
KW - Wolf1976
ER -
TY - BOOK
T1 - Solar Cells
Y1 - 1976
A1 - C.E. Backus
AB - The present volume constitutes a reference book containing classic papers in the field of solar cells as well as a relatively complete photovoltaic bibliography. The general subjects include the historical development of solar cells, solar-cell theory, cell fabrication, space systems, terrestrial applications, and working-group resumes and discussions. Individual papers deal with such topics as silicon p-n junction photocells, effects of temperature on photovoltaic solar-energy conversion, series resistance effects on solar-cell measurements, drift fields in photovoltaic solar-energy-converter cells, the violet cell, the photovoltaic effect in CdS, efficiency calculations of heterojunction solar-energy converters, CdTe solar cells and photovoltaic heterojunctions in II-VI compounds, the photovoltaic effect in GaAs p-n junctions, and the multiple-junction edge-illuminated solar cell. Other papers discuss silicon solar cell degradation in the space environment, direct solar-energy conversion for terrestrial use, single-crystal and polycrystalline silicon, and CdS/Cu2S thin-film cells
PB - IEEE
CY - New York
N1 -
KW - Backus1976
ER -
TY - JOUR
T1 - Solar thermal power system based on optical transmission
JF - Solar Energy
Y1 - 1976
A1 - L.L. Vant-Hull
A1 - A.F. Hildebrandt
VL - 18
UR - http://www.sciencedirect.com/science/article/B6V50-497SCJS-2H/2/78dfffb8fca290387fb2596f89696498
N1 -
KW - VantHull1976
ER -
TY - JOUR
T1 - Bi2S3 as a high Z material for γ-ray detectors
JF - IEEE Transactions on Nuclear Science
Y1 - 1975
A1 - Wald, F. V.
A1 - Bullitt, J.
A1 - Bell, R. O.
VL - 22
UR - http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=4327646
CP - 1
J1 - IEEE Trans. Nucl. Sci.
KW - Wald1975
ER -
TY - JOUR
T1 - Intercalation and lattice expansion in titanium disulfide
JF - The Journal of Chemical Physics
Y1 - 1975
A1 - Stanley M Whittingham
A1 - Arthur H Thompson
AB - The temperature coefficient of expansion has been measured for the a and c axes of titanium disulfide, and of its intercalates with a metal, lithium, and an organic base, s−collidine. The anisotropy in the expansion coefficients is related to the bonding in the structure.
VL - 62
UR - http://link.aip.org/link/?JCP/62/1588/1&Agg=doi
CP - 4
J1 - J. Chem. Phys.
KW - Whittingham1975
ER -
TY - JOUR
T1 - CuInSe2/CdS heterojunction photovoltaic detectors
JF - Applied Physics Letters
Y1 - 1974
A1 - Wagner, Sigurd
A1 - Shay, JL
A1 - Migliorato, P
A1 - Kasper, HM
VL - 25
KW - wagner1974cuinse2
ER -
TY - JOUR
T1 - Minority carrier MIS tunnel diodes and their application to electron- and photo-voltaic energy conversion—I. Theory
JF - Solid-State Electronics
Y1 - 1974
A1 - Green, M.A.
A1 - King, F.D.
A1 - Shewchun, J.
AB - If the insulating layer in a metal-insulator-semiconductor (MIS) diode is very thin (<60 Å for AlSiO2Si), measureable tunnel current can flow between the metal and the semiconductor. If the insulating layer is even thinner (<30 Å), tunnel currents are so large that they can significantly disturb the semiconductor from thermal equilibrium. Under such conditions, MIS diodes exhibit properties determined by which of the following tunneling processes is dominant; tunneling between the metal and the majority carrier energy band in the semiconductor, between the metal and the minority carrier energy band, or between the metal abd surface state levels. In the present paper, minority carrier MIS tunnel diodes are analysed using a very general formulation of the tunneling processes through the insulator, transport properties in the semiconductor, and surface state effects. Starting from solutions for diodes with relatively thick insulating layers where the semiconductor is essentially in thermal equilibrium, solutions are obtained for progressively thinner insulating layers until non-equilibrium effects in the semiconductor are observed. It is shown that such minority carrier MIS tunnel diodes with very thin insulating layers possess properties similar to p-n junction diodes including exponential current-voltage characteristics which approach the “ideal diode” law of p-n junction theory. The theory adequately describes the observed properties of experimental devices reported in a companion paper. The diodes have application as injecting contacts, as photodiodes or elements of photodiode arrays, and as energy conversion devices employing the electron- or photo-voltaic effects.
VL - 17
UR - http://linkinghub.elsevier.com/retrieve/pii/0038110174901725http://api.elsevier.com/content/article/PII:0038110174901725?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:0038110174901725?httpAccept=text/plain
CP - 6
J1 - Solid-State Electronics
KW - Green1974
ER -
TY - Generic
T1 - Optimum Design of Anti-reflection coating for silicon solar cells
T2 - 10th IEEE Photovoltaic Specialists Conference
Y1 - 1973
A1 - E.Y. Wang
A1 - F.T.S. Yu
A1 - V.L. Sims
A1 - E.W. Brandhorst
A1 - J.D. Broder
JA - 10th IEEE Photovoltaic Specialists Conference
N1 -
KW - Wang1973
ER -
TY - JOUR
T1 - Optical Properties of Substitutional Donors in ZnSe
JF - Physical Review B
Y1 - 1972
A1 - Merz, J. L.
A1 - Kukimoto, H.
A1 - Nassau, K.
A1 - Shiever, J. W.
VL - 6
UR - https://link.aps.org/doi/10.1103/PhysRevB.6.545http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.6.545/fulltexthttp://link.aps.org/article/10.1103/PhysRevB.6.545
CP - 2
J1 - Phys. Rev. B
KW - merz1972
ER -
TY - JOUR
T1 - High Electron Mobility in Zinc Selenide Through Low-Temperature Annealing
JF - Journal of Applied Physics
Y1 - 1971
A1 - Aven, M.
AB - Electron mobility in ZnSe has been measured between 40° and 400°K. It is shown that through repeated annealing in liquid Zn the mobility maximum can be increased to 12 000 cm2∕V sec. This is one of the highest mobilities measured for semiconductors with band gaps as wide as that of ZnSe (2.7 eV). The increase in mobility is mainly due to elimination of doubly charged acceptor states. The residual scattering is believed to be due, in part, to charged isolated impurities and, in part, to paired impurity dipoles.
VL - 42
CP - 3
J1 - J. Appl. Phys.
KW - 531
ER -
TY - JOUR
T1 - The measurement of solar spectral irradiance at different terrestrial elevations
JF - Solar Energy
Y1 - 1970
A1 - E.G. Laue
VL - 13
UR - http://www.sciencedirect.com/science/article/B6V50-497T7KC-T/2/c932c2f01c2de3c36c0f461c991f791a
N1 -
KW - Laue1970
ER -
TY - JOUR
T1 - The absorption of radiation in solar stills
JF - Solar Energy
Y1 - 1969
A1 - P.I. Cooper
VL - 12
UR - http://www.sciencedirect.com/science/article/B6V50-497BD6C-27/2/a4ca2069fe8c8b0cfa571de016d93cc5
N1 -
KW - Cooper1969
ER -
TY - JOUR
T1 - Shallow phosphorus diffusion profiles in silicon
JF - Proceedings of the IEEE
Y1 - 1969
A1 - Tsai, J.C.C.
VL - 57
UR - http://ieeexplore.ieee.org/document/1449255/http://xplorestaging.ieee.org/ielx5/5/31124/01449255.pdf?arnumber=1449255
CP - 9
J1 - Proc. IEEE
KW - Tsai1969
ER -
TY - JOUR
T1 - Electrical properties of the Group IV disulfides, titanium disulfide, zirconium disulfide, hafnium disulfide and tin disulfide
JF - Inorganic Chemistry
Y1 - 1968
A1 - Conroy, Lawrence E.
A1 - Park, Kyu Chang
VL - 7
UR - http://pubs.acs.org/doi/abs/10.1021/ic50061a015
CP - 3
J1 - Inorg. Chem.
KW - Conroy1968
ER -
TY - JOUR
T1 - Electroreflectance Measurements on Mg2Si, Mg2Ge, and Mg2Sn
JF - Physical Review
Y1 - 1968
A1 - Vazquez, F.
A1 - Forman, Richard
A1 - Cardona, Manuel
VL - 176
UR - http://link.aps.org/doi/10.1103/PhysRev.176.905
CP - 3
J1 - Phys. Rev.
KW - Vazquez1968
ER -
TY - JOUR
T1 - On the Properties of alpha-MnS and MnS2.
JF - Acta Chemica Scandinavica
Y1 - 1965
A1 - Furuseth, Sigrid
A1 - Kjekshus, Arne
A1 - Niklasson, Rune J. V.
A1 - Brunvoll, J.
A1 - Hinton, Merv
VL - 19
UR - http://actachemscand.org/doi/10.3891/acta.chem.scand.19-1405
J1 - Acta Chem. Scand.
KW - Furuseth1965
ER -
TY - JOUR
T1 - Nondestructive determination of thickness and refractive index of transparent films
JF - IBM Journal of Research Devices
Y1 - 1964
A1 - W. A. Pliskin
A1 - E. E. Conrad
AB - A simple nondestructive method of measuring the refractive index and thickness of transparent films on reflective substrates has been developed. The technique involves the use of a microscope equipped with a monochromatic filter on the objective and a stage that can be rotated so that the reflected light is observed at various angles. The film thickness, d, is given by d = {[ΔNλ]/[2µ(cos} r2, - cos r1)], where λ is the wavelength of the filtered light, µ is the refractive index, and {ΔN} is the number of fringes observed between the angles of refraction r2, and r1.
VL - 8
UR - http://portal.acm.org/citation.cfm?id=1662391
N1 -
KW - Pliskin1964
ER -
TY - BOOK
T1 - Crystal Structures 1
T2 - Crystal Structures
Y1 - 1963
A1 - Ralph W G Wyckoff
JA - Crystal Structures
PB - Interscience Publishers
CY - New York, New York
VL - 1
UR - http://rruff.geo.arizona.edu/AMS/AMC_text_files/13434_amc.txt
KW - Wyckoff1963
ER -
TY - JOUR
T1 - Elastic Constants of Pyrite
JF - Journal of Applied Physics
Y1 - 1963
A1 - Simmons, Gene
A1 - Birch, Francis
VL - 34
UR - http://aip.scitation.org/doi/10.1063/1.1729801http://aip.scitation.org/doi/pdf/10.1063/1.1729801
CP - 9
J1 - Journal of Applied Physics
KW - simmons1963
ER -
TY - JOUR
T1 - Series Resistance Effects on Solar Cell Measurements
JF - Advanced Energy Conversion
Y1 - 1963
A1 - M. Wolf
A1 - H. Rauschenbach
VL - 3
KW - Wolf1963
ER -
TY - JOUR
T1 - Detailed Balance Limit of Efficiency of p-n Junction Solar Cells
JF - Journal of Applied Physics
Y1 - 1961
A1 - William Shockley
A1 - Hans J. Queisser
PB - AIP
VL - 32
UR - http://link.aip.org/link/?JAP/32/510/1
KW - Shockley1961
ER -
TY - JOUR
T1 - KNOOP HARDNESS NUMBERS FOR 127 OPAQUE MINERALS
JF - Geological Society of America Bulletin
Y1 - 1961
A1 - ROBERTSON, FORBES
VL - 72
UR - https://pubs.geoscienceworld.org/gsabulletin/article/72/4/621-637/5310http://bulletin.geoscienceworld.org/cgi/doi/10.1130/0016-7606(1961)72%5B621:KHNFOM%5D2.0.CO;2
CP - 4
J1 - Geol Soc America Bull
KW - robertson1961
ER -
TY - CONF
T1 - High efficiency silicon solar cells
T2 - Proceedings of the 14th Annual Power Sources Conference
Y1 - 1960
A1 - B. Dale
A1 - H.G. Rudenberg
JA - Proceedings of the 14th Annual Power Sources Conference
PB - U.S. Army Signal Research and Development Lab
N1 -
KW - Dale1960
ER -
TY - CHAP
T1 - Semiconductor Devices, Chapter 8
Y1 - 1959
A1 - J.N. Shive
PB - Van Nostrand
CY - New Jersey
N1 -
KW - Shive1959
ER -
TY - JOUR
T1 - Measurement of sheet resistivities with the four-point probe
JF - Bell System Technical Journal
Y1 - 1958
A1 - F.M. Smits
VL - 34
N1 -
KW - Smits1958
ER -
TY - JOUR
T1 - Photoconductivity of Zinc Selenide Crystals and a Correlation of Donor and Acceptor Levels in II-VI Photoconductors
JF - Phys. Rev.
Y1 - 1958
A1 - Bube, Richard H.
A1 - Lind, Edward L.
AB - Photosensitive crystals of zinc selenide have been prepared by incorporating suitable proportions of Group VII donors (e.g., bromine) and either Group I acceptors (copper or silver) or Group V acceptors (antimony or arsenic) in crystals prepared from the vapor phase. Photoconductivity phenomena characteristic of other II-VI photoconductors, such as (a) variation of photocurrent with a power of light intensity greater than unity, (b) temperature quenching of photoconductivity, and (c) infrared quenching of photoconductivity, are also found for zinc selenide. Sensitizing centers in ZnSe: Br: Cu and ZnSe: Br: Ag have levels lying at the same distance above the top of the valence band (0.6 ev) as sensitizing centers in CdSe, even though the band gap of ZnSe is 50% larger than that of CdSe. Crystals with Group V acceptors are characterized in addition by a long-wavelength spectral response, out to 1.4 microns, associated with levels lying about 1.3 ev above the top of the valence band. By a consideration of known data on the conductivity, photoconductivity, and luminescence of II-VI compounds, a consistent correlation of donor and acceptor levels in these materials is possible.
VL - 110
UR - http://link.aps.org/doi/10.1103/PhysRev.110.1040
KW - Bube1958
ER -
TY - JOUR
T1 - Conversion of Solar to Electrical Energy
JF - American Journal of Physics
Y1 - 1957
A1 - Pearson, G. L.
AB - A photovoltaic device has been developed which converts solar radiation directly into electrical energy with an over-all efficiency of 11%. This consists of a p-n junction formed by gaseous diffusion near the front surface of a silicon plate. In full sunlight a single cell furnishes approximately 30 ma of short circuit current per square centimeter of surface, 0.6 v of open circuit voltage, and 12 mw of power into a matched load per square centimeter of surface. Like other electric batteries, individual cells may be connected in series or parallel to obtain an increase in terminal voltage or current. The spectral response is a maximum near 0.7 µ, and the long wavelength cutoff is at approximately 1.1 µ. The efficiency of this new siliconp-n junctionphotovoltaic cell is greater by a factor of 20 than that previously reported for other types of photocells and makes the conversion of the sun's energy directly into electricity possible for a number of interesting applications. A Bell System field trial at Americus, Georgia, in which solar batteries are used to power a rural carrier telephone communication system, is described. A number of other possible applications for this new solar energy converter are discussed.
VL - 25
UR - http://link.aip.org/link/?AJP/25/591/1&Agg=doi
CP - 9
J1 - Am. J. Phys.
KW - 567
ER -
TY - ABST
T1 - Bell Laboratories Record
Y1 - 1955
KW - Bell1955
ER -
TY - JOUR
T1 - A New Silicon P-N Junction Photocell for Converting Solar Radiation into Electrical Power
JF - Journal of Applied Physics
Y1 - 1954
A1 - Chapin, D.M.
A1 - Fuller, C.S.
A1 - Pearson, G.L.
VL - 25
N1 -
KW - Chapin1954
ER -
TY - JOUR
T1 - Electron-Hole Recombination in Germanium
JF - Phys. Rev.
Y1 - 1952
A1 - Hall, R. N.
PB - American Physical Society
VL - 87
N1 -
KW - Hall1952
ER -
TY - JOUR
T1 - Photoelectric Properties of Tonically Bombarded Silicon
JF - Bell Systems Technical Journal
Y1 - 1952
A1 - Kingsbury, E.F.
A1 - Ohl, R.S.
VL - 31
N1 -
KW - Kingsbury1952
ER -
TY - JOUR
T1 - Statistics of the Recombinations of Holes and Electrons
JF - Physical Review
Y1 - 1952
A1 - William Shockley
A1 - W. T. Read
AB - The statistics of the recombination of holes and electrons in semiconductors is analyzed on the basis of a model in which the recombination occurs through the mechanism of trapping. A trap is assumed to have an energy level in the energy gap so that its charge may have either of two values differing by one electronic charge. The dependence of lifetime of injected carriers upon initial conductivity and upon injected carrier density is discussed.
VL - 87
UR - http://link.aps.org/doi/10.1103/PhysRev.87.835
KW - Shockley1952
ER -
TY - JOUR
T1 - Zone-refining
JF - Trans. AIME,
Y1 - 1952
A1 - W. G. Pfann
VL - 194
N1 -
KW - Pfann1952
ER -
TY - BOOK
T1 - Electrons and holes in semiconductors with applications to transistor electronics
Y1 - 1950
A1 - William Shockley
PB - van Nostrand
CY - New York
KW - shockley1950
ER -
TY - JOUR
T1 - The theory of p-n Junctions in semiconductors and p-n junction transistors
JF - Bell System Technical Journal
Y1 - 1949
A1 - Shockley, W.
AB - In a single crystal of semiconductor the impurity concentration may vary from p-type to n-type producing a mechanically continuous rectifying junction. The theory of potential distribution and rectification for p-n junctions is developed with emphasis on germanium. The currents across the junction are carried by the diffusion of holes in n-type material and electrons in p-type material, resulting in an admittance for a simple case varying as (1 + iωτ p ) 1/2 where τ p is the lifetime of a hole in the n-region. Contact potentials across p-n junctions, carrying no current, may develop when hole or electron injection occurs. The principles and theory of a p-n-p transistor are described.
VL - 28
UR - http://doi.wiley.com/10.1002/bltj.1949.28.issue-3https://ieeexplore.ieee.org/document/6773080
CP - 3
KW - Shockley1949
ER -
TY - JOUR
T1 - Light-Sensitive Electric Device
JF - U.S. Patent
Y1 - 1941
A1 - Ohl, R.S.
VL - 2
N1 -
KW - Ohl1941
ER -
TY - JOUR
T1 - A Thallous Sulphide Photo EMF Cell
JF - Journal Opt. Society of America
Y1 - 1939
A1 - Nix, F.C.
A1 - Treptwo, A.W.
VL - 29
N1 -
KW - Nix1939
ER -
TY - JOUR
T1 - Absolutwerte der optischen Absorptionskonstanten von Alkalihalogenidkristallen im Gebiet ihrer ultravioletten Eigenfrequenzen
JF - Annalen der Physik
Y1 - 1934
A1 - Bauer, Gerhard
VL - 411
CP - 4
J1 - Ann. Phys.
KW - Bauer1934
ER -
TY - JOUR
T1 - The Copper-Cuprous-Oxide Rectifier and Photoelectric Cell
JF - Review of Modern Physics
Y1 - 1933
A1 - Grondahl, L.O.
VL - 5
N1 -
KW - Grondahl1933
ER -
TY - JOUR
T1 - Uber eine neue Selen- Sperrschicht Photozelle
JF - Physikalische Zeitschrift
Y1 - 1931
A1 - Bergmann, L.
VL - 32
N1 -
KW - Bergmann1931
ER -
TY - JOUR
T1 - Sur les rayons β secondaires produits dans un gaz par des rayons X
JF - C.R.A.S.
Y1 - 1923
A1 - P. Auger
VL - 177
N1 -
KW - Auger1923
ER -
TY - JOUR
T1 - Note on the Equation, of Time
JF - The Mathematical Gazette
Y1 - 1921
A1 - Milne, R. M.
VL - 10
UR - https://www.cambridge.org/core/product/identifier/S0025557200232944/type/journal_articlehttps://www.cambridge.org/core/services/aop-cambridge-core/content/view/S0025557200232944
CP - 155
J1 - Math. Gaz.
KW - Milne1921
ER -
TY - JOUR
T1 - Ein neues Verfahren zur Messung der Kristallisationsgeschwindigheit der Metalle
JF - Zeitschrift für physikalische Chemie
Y1 - 1918
A1 - Czochralski, J.
VL - 92
KW - Czochralski1918
ER -
TY - JOUR
T1 - Generation and transformation of light
JF - Annalen der Physik
Y1 - 1905
A1 - A. Einstein
KW - Einstein1905
VL - 17
N1 -
KW - Einstein1905
ER -
TY - JOUR
T1 - Distribution of energy in the spectrum
JF - Annalen der Physik
Y1 - 1901
A1 - M. Planck
VL - 4
N1 -
KW - Planck1901
ER -
TY - JOUR
T1 - Distribution of energy in the normal spectrum
JF - Verhandlungen der Deutschen Physikalischen Gesellschaft
Y1 - 1900
A1 - M. Planck
VL - 2
N1 -
KW - Planck1900
ER -
TY - JOUR
T1 - On a New Form of Selenium Photocell
JF - American J. of Science
Y1 - 1883
A1 - Fritts, C.E.
VL - 26
N1 -
KW - Fritts1883
ER -
TY - JOUR
T1 - The Action of Light on Selenium
JF - Proceedings of the Royal Society, London
Y1 - 1877
A1 - Adams, W.G.
A1 - Day, R.E.
VL - A25
N1 -
KW - Adams1877
ER -
TY - JOUR
T1 - On Conductance in Metal Sulphides
JF - Ann. d. Physik
Y1 - 1874
A1 - Braun, F.
VL - 153
N1 -
KW - Braun1874
ER -
TY - JOUR
T1 - Memoire sur les effects d´electriques produits sous l´influence des rayons solaires
JF - Annalen der Physick und Chemie
Y1 - 1841
A1 - Becquerel, A.E.
VL - 54
N1 -
KW - Becquerel1841
ER -
TY - JOUR
T1 - Recherches sur les effets de la radiation chimique de la lumiere solaire au moyen des courants electriques
JF - Comptes Rendus de L´Academie des Sciences
Y1 - 1839
A1 - Becquerel, A.E.
VL - 9
N1 -
KW - Becquerel1839
ER -
TY - Generic
T1 - TITANIUM(IV) SULFIDE CAS No. 12039-13-3
Y1 - 0
UR - http://www.chemicalbook.com/ChemicalProductProperty_EN_CB2240473.htm
KW - TiS
ER -