TY - JOUR T1 - Microstructure dependent physical properties of evaporated tin sulfide films JF - Journal of Applied Physics Y1 - 2006 A1 - Devika, M. A1 - Ramakrishna Reddy, K. T. A1 - Koteeswara Reddy, N. A1 - Ramesh, K. A1 - Ganesan, R. A1 - Gopal, E. S. R. A1 - Gunasekhar, K. R. AB - In the field of photovoltaics, semiconductors of the III-V group such as GaAs and InP have been considered as the most efficient absorber materials due to their direct energyband gap and high mobility. In these compounds, arsenic and phosphorus are highly toxic and expensive. In this work we present systematic preparation of low cost SnS thin films and characterize these films to test their suitability for photovoltaic applications. We have observed that the films (with thickness ≅0.5μm) grown at the substrate temperature of 275°C exhibit a low resistive single SnS phase and have a direct optical band gap of 1.35eV with an absorption coefficient of ∼105cm−1. SnSfilms could be alternative semiconductor materials as absorbers for the fabrication of photovoltaic devices. VL - 100 UR - http://scitation.aip.org/content/aip/journal/jap/100/2/10.1063/1.2216790 CP - 2 J1 - J. Appl. Phys. KW - Devika2006 ER -