TY - JOUR T1 - Progress in thin film CIGS photovoltaics–Research and development, manufacturing, and applications JF - Progress in Photovoltaics: Research and Applications Y1 - 2017 A1 - Feurer, Thomas A1 - Reinhard, Patrick A1 - Avancini, Enrico A1 - Bissig, Benjamin A1 - Löckinger, Johannes A1 - Fuchs, Peter A1 - Carron, Romain A1 - Weiss, Thomas Paul A1 - Perrenoud, Julian A1 - Stutterheim, Stephan A1 - Buecheler, Stephan A1 - Tiwari, Ayodhya N. VL - 25 KW - feurer2017progress ER - TY - JOUR T1 - Device characteristics of CZTSSe thin-film solar cells with 12.6% efficiency JF - Advanced Energy Materials Y1 - 2014 A1 - Wang, Wei A1 - Winkler, Mark T A1 - Oki Gunawan A1 - Tayfun Gokmen A1 - Todorov, Teodor K A1 - Zhu, Yu A1 - Mitzi, David B VL - 4 KW - wang2014device ER - TY - JOUR T1 - Band tailing and efficiency limitation in kesterite solar cells JF - Applied Physics Letters Y1 - 2013 A1 - Tayfun Gokmen A1 - Oki Gunawan A1 - Teodor K. Todorov A1 - David B. Mitzi VL - 103 UR - http://dx.doi.org/10.1063/1.4820250 KW - Gokmen2013 ER - TY - JOUR T1 - High-efficiency Cu(In,Ga)Se2 cells and modules JF - Solar energy materials and solar cells Y1 - 2013 A1 - Powalla, Michael A1 - Jackson, Philip A1 - Witte, Wolfram A1 - Hariskos, Dimitrios A1 - Paetel, Stefan A1 - Tschamber, Carsten A1 - Wischmann, Wiltraud VL - 119 KW - powalla2013high ER - TY - JOUR T1 - The Influence of Absorber Thickness on Cu(In,Ga)Se2 Solar Cells With Different Buffer Layers JF - IEEE journal of photovoltaics Y1 - 2013 A1 - Pettersson, Jonas A1 - Törndahl, Tobias A1 - Platzer-Björkman, Charlotte A1 - Hultqvist, Adam A1 - Edoff, Marika VL - 3 UR - https://ieeexplore.ieee.org/abstract/document/6579660 KW - pettersson2013influence ER - TY - JOUR T1 - Isotextured Silicon Solar Cell Analysis and Modeling 1: Optics JF - IEEE Journal of Photovoltaics Y1 - 2012 A1 - Baker-Finch, Simeon C. A1 - McIntosh, Keith R. A1 - Terry, Mason L. VL - 2 CP - 4 J1 - IEEE J. Photovoltaics KW - 533 ER - TY - JOUR T1 - The path towards a high-performance solution-processed kesterite solar cell JF - Solar Energy Materials and Solar Cells Y1 - 2011 A1 - David B. Mitzi A1 - Oki Gunawan A1 - Teodor K. Todorov A1 - Kejia Wang A1 - Supratik Guha KW - Solution processing AB - Despite the promise of thin-film Cu(In,Ga)(S,Se)2 (CIGSSe) chalcopyrite and CdTe photovoltaic technologies with respect to reducing cost per watt of solar energy conversion, these approaches rely on elements that are either costly and/or rare in the earth's crust (e.g., In, Ga, Te) or that present toxicity issues (e.g., Cd), thereby potentially limiting these technologies in terms of future cost reduction and production growth. In order to develop a photovoltaic technology that is truly compatible with terawatt deployment, it is desirable to consider material systems that employ less toxic and lower cost elements, while maintaining the advantages of the chalcopyrite and CdTe materials with respect to appropriate direct band gap tunability over the solar spectrum, high device performance (e.g., >10% power conversion efficiency) and compatibility with low-cost manufacturing. In this review, the development of kesterite-based Cu2ZnSn(S,Se)4 (CZTSSe) thin-film solar cells, in which the indium and gallium from \{CIGSSe\} are replaced by the readily available elements zinc and tin, will be reviewed. While vacuum-deposited devices have enabled optimization within the compositional phase space and yielded selenium-free \{CZTS\} device efficiencies of as high as 6.8%, more recently a liquid-based approach has been described that has enabled deposition of \{CZTSSe\} devices with power conversion efficiency of 9.7%, bringing the kesterite-based technology into a range of potential commercial interest. Electrical characterization studies on these high-performance \{CZTSSe\} cells reveal some of the key loss mechanisms (e.g., dominant interface recombination, high series resistance and low minority carrier lifetime) that limit the cell performance. Further elucidation of these mechanisms, as well as building an understanding of long-term device stability, are required to help propel this relatively new technology forward. VL - 95 UR - http://www.sciencedirect.com/science/article/pii/S0927024810006719 KW - Mitzi2011 ER - TY - JOUR T1 - A Theoretical Search for Efficient Dopants in Mg2X (X = Si, Ge, Sn) Thermoelectric Materials JF - Journal of Electronic Materials Y1 - 2011 A1 - Zwolenski, P. A1 - Tobola, J. A1 - Kaprzyk, S. VL - 40 UR - http://link.springer.com/10.1007/s11664-011-1624-yhttp://www.springerlink.com/index/pdf/10.1007/s11664-011-1624-y CP - 5 J1 - Journal of Elec Materi KW - Zwolenski2011 ER - TY - Generic T1 - World’s Highest Efficiency Triple-junction Solar Cells Fabricated by Inverted Layers Transfer Process T2 - 35 IEEE Photovoltaic Specialist Conference Y1 - 2010 A1 - Takamoto, T. A1 - Agui, T. A1 - Yoshida, A. A1 - Nakaido, K. A1 - Juso, H. A1 - Sasaki, K. A1 - Nakamura, K. A1 - Yamaguchi, H. A1 - Kodama, T. A1 - Washio, H. A1 - Imazumi, M. A1 - Takahashi, M. JA - 35 IEEE Photovoltaic Specialist Conference CY - Honolulu HI, USA N1 -
KW - Takamoto2010 ER - TY - JOUR T1 - Development of CZTS-based thin film solar cells JF - Thin Solid Films Y1 - 2009 A1 - Hironori Katagiri A1 - Jimbo, Kazuo A1 - Maw, Win Shwe A1 - Oishi, Koichiro A1 - Yamazaki, Makoto A1 - Araki, Hideaki A1 - Takeuchi, Akiko VL - 517 KW - Katagiri2009 ER - TY - JOUR T1 - Structural, optical, and electrical properties of tin sulfide thin films grown by spray pyrolysis JF - Thin Solid Films Y1 - 2009 A1 - Calixto-Rodriguez, M. A1 - Martinez, H. A1 - Sanchez-Juarez, A. A1 - Campos-Alvarez, J. A1 - Tiburcio-Silver, A. A1 - Calixto, M.E. VL - 517 UR - http://linkinghub.elsevier.com/retrieve/pii/S0040609008014077http://api.elsevier.com/content/article/PII:S0040609008014077?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:S0040609008014077?httpAccept=text/plain CP - 7 J1 - Thin Solid Films KW - Calixto2009 ER - TY - JOUR T1 - Crystallinity and surface effects on Young’s modulus of CuO nanowires JF - Applied Physics Letters Y1 - 2007 A1 - Tan, E. P. S. A1 - Zhu, Y. A1 - Yu, T. A1 - Dai, L. A1 - Sow, C. H. A1 - Tan, V. B. C. A1 - Lim, C. T. VL - 90 UR - http://link.aip.org/link/APPLAB/v90/i16/p163112/s1&Agg=doi CP - 16 J1 - Appl. Phys. Lett. KW - Tan2007 ER - TY - JOUR T1 - Nanocrystalline CuO films prepared by pyrolysis of Cu-arachidate LB multilayers JF - Colloids and Surfaces A: Physicochemical and Engineering Aspects Y1 - 2005 A1 - Parhizkar, M. A1 - Singh, Sukhvinder A1 - Nayak, P.K. A1 - Kumar, Nigvendra A1 - Muthe, K.P. A1 - Gupta, S.K. A1 - Srinivasa, R.S. A1 - Talwar, S.S. A1 - Major, S.S. VL - 257-258 UR - http://linkinghub.elsevier.com/retrieve/pii/S0927775704007320 J1 - Colloids and Surfaces A: Physicochemical and Engineering Aspects KW - Parhizkar2005 ER - TY - JOUR T1 - Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence JF - Applied Physics Letters Y1 - 2005 A1 - Takashi Fuyuki A1 - Hayato Kondo A1 - Tsutomu Yamazaki A1 - Yu Takahashi A1 - Yukiharu Uraoka KW - carrier lifetime KW - electroluminescence KW - elemental semiconductors KW - MINORITY CARRIERS KW - SILICON KW - solar cells PB - AIP VL - 86 UR - http://link.aip.org/link/?APL/86/262108/1 KW - Fuyuki2005 ER - TY - JOUR T1 - Thermoelectric properties of Bi-doped Mg2Si semiconductors JF - Physica B: Condensed Matter Y1 - 2005 A1 - Tani, Jun-ichi A1 - Kido, Hiroyasu VL - 364 UR - http://linkinghub.elsevier.com/retrieve/pii/S092145260500709X CP - 1-4 J1 - Physica B: Condensed Matter KW - Tani2005 ER - TY - JOUR T1 - Effects of NaF coevaporation on structural properties of Cu (In, Ga) Se2 thin films JF - Thin Solid Films Y1 - 2003 A1 - Rudmann, D A1 - Bilger, G A1 - Kaelin, M A1 - Haug, F-J A1 - Zogg, H A1 - Tiwari, AN VL - 431 KW - rudmann2003effects ER - TY - JOUR T1 - Specifying targets of future research in photovoltaic devices containing pyrite (FeS2) by numerical modelling JF - Solar Energy Materials and Solar Cells Y1 - 2002 A1 - Pietro P Altermatt A1 - Kiesewetter, Tobias A1 - Ellmer, Klaus A1 - Tributsch, Helmut VL - 71 UR - http://linkinghub.elsevier.com/retrieve/pii/S0927024801000538http://api.elsevier.com/content/article/PII:S0927024801000538?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:S0927024801000538?httpAccept=text/plain CP - 2 J1 - Solar Energy Materials and Solar Cells KW - altermatt2002 ER - TY - JOUR T1 - ZnSe thin films grown by chemical vapour deposition for application as buffer layer in CIGSS solar cells JF - Thin Solid Films Y1 - 2000 A1 - Rumberg, A. A1 - Sommerhalter, Ch. A1 - Toplak, M. A1 - Jäger-Waldau, A. A1 - Lux-Steiner, M.Ch. VL - 361-362 UR - http://linkinghub.elsevier.com/retrieve/pii/S0040609099007907http://api.elsevier.com/content/article/PII:S0040609099007907?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:S0040609099007907?httpAccept=text/plain J1 - Thin Solid Films KW - rumberg2000 ER - TY - JOUR T1 - Photoeffects in cobalt doped pyrite (FeS 2 ) films JF - Solid State Communications Y1 - 1999 A1 - Thomas, B. A1 - Ellmer, K. A1 - Bohne, W. A1 - Röhrich, J. A1 - Kunst, M. A1 - Tributsch, H. VL - 111 UR - http://linkinghub.elsevier.com/retrieve/pii/S0038109899002136http://api.elsevier.com/content/article/PII:S0038109899002136?httpAccept=text/plainhttp://api.elsevier.com/content/article/PII:S0038109899002136?httpAccept=text/xml CP - 5 J1 - Solid State Communications KW - thomas1999 ER - TY - JOUR T1 - Process and characterisation of chemical bath deposited manganese sulphide (MnS) thin films JF - Thin Solid Films Y1 - 1998 A1 - Lokhande, C.D. A1 - Ennaoui, A. A1 - Patil, P.S. A1 - Giersig, M. A1 - Muller, M. A1 - Diesner, K. A1 - Tributsch, H. VL - 330 UR - http://linkinghub.elsevier.com/retrieve/pii/S0040609098005008 CP - 2 J1 - Thin Solid Films KW - Lokhande1998 ER - TY - CONF T1 - Investigation on SnS film by RF sputtering for photovoltaic application T2 - 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC) Y1 - 1994 A1 - Wei Guang-Pu A1 - Zhang Zhi-Lin A1 - Zhao Wei-Ming A1 - Gao Xiang-Hong A1 - Chen Wei-Qun A1 - Tanamura, H. A1 - Yamaguchi, M. A1 - Noguchi, H. A1 - Nagatomo, T. A1 - Omoto, O. JA - 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC) PB - IEEE CY - Waikoloa, HI, USA UR - http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=519977 KW - Pu1994 ER - TY - JOUR T1 - Accurate measurements of the silicon intrinsic carrier density from 78 to 340 K JF - Journal of Applied Physics Y1 - 1993 A1 - Misiakos, Konstantinos A1 - Tsamakis, Dimitris AB - The intrinsic carrier density in silicon has been measured by a novel technique based on low‐frequency capacitance measurements of a p+‐i‐n+ diode biased in high injection. The major advantage of the method is its insensitivity to uncertainties regarding the exact values of the carrier mobilities, the recombination parameters, and the doping density. The intrinsic carrier density was measured in the temperature range from 78 to 340 K. At 300 K the value of ni was found to be (9.7±0.1)×10^9 cm−3. VL - 74 CP - 5 J1 - J. Appl. Phys. KW - Misiakos93 ER - TY - JOUR T1 - Optical properties of ZnSe JF - Physical Review B Y1 - 1991 A1 - Adachi, Sadao A1 - Taguchi, Tsunemasa VL - 43 UR - https://link.aps.org/doi/10.1103/PhysRevB.43.9569http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.43.9569/fulltexthttp://link.aps.org/article/10.1103/PhysRevB.43.9569 CP - 12 J1 - Phys. Rev. B KW - adachi1991 ER - TY - JOUR T1 - Limiting Efficiency of Silicon Solar Cells JF - IEEE TRANSACTIONS ON ELECTRON DEVICES Y1 - 1984 A1 - T. Tiedje A1 - E Yablonovich A1 - G.D. Cody A1 - B.G. Brooks VL - ED-31 N1 -
KW - Tiedje1984 ER - TY - ABST T1 - The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon Y1 - 1981 A1 - W R Thurber A1 - Mattis A1 - Liu A1 - Filliben PB - U.S. Department of Commerce National Bureau of Standards N1 -
KW - Thurber1981 ER - TY - JOUR T1 - Resistivity-Dopant Density Relationship for Boron-Doped Silicon JF - Journal of The Electrochemical Society Y1 - 1980 A1 - W R Thurber A1 - R. L. Mattis A1 - Y. M. Liu A1 - J. J. Filliben KW - boron KW - electrical resistivity KW - Hall effect KW - hole density KW - semiconductor doping KW - SILICON PB - ECS VL - 127 UR - http://link.aip.org/link/?JES/127/2291/1 N1 -
KW - Thurber1980boron ER - TY - JOUR T1 - Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon JF - Journal of The Electrochemical Society Y1 - 1980 A1 - W R Thurber A1 - R. L. Mattis A1 - Y. M. Liu A1 - J. J. Filliben KW - density KW - electrical resistivity KW - electron mobility KW - Hall effect KW - neutron activation analysis KW - phosphorus KW - photometry KW - semiconductor doping KW - SILICON PB - ECS VL - 127 UR - http://link.aip.org/link/?JES/127/1807/1 KW - Thurber1980phos ER - TY - JOUR T1 - Intercalation and lattice expansion in titanium disulfide JF - The Journal of Chemical Physics Y1 - 1975 A1 - Stanley M Whittingham A1 - Arthur H Thompson AB - The temperature coefficient of expansion has been measured for the a and c axes of titanium disulfide, and of its intercalates with a metal, lithium, and an organic base, s−collidine. The anisotropy in the expansion coefficients is related to the bonding in the structure. VL - 62 UR - http://link.aip.org/link/?JCP/62/1588/1&Agg=doi CP - 4 J1 - J. Chem. Phys. KW - Whittingham1975 ER - TY - JOUR T1 - Shallow phosphorus diffusion profiles in silicon JF - Proceedings of the IEEE Y1 - 1969 A1 - Tsai, J.C.C. VL - 57 UR - http://ieeexplore.ieee.org/document/1449255/http://xplorestaging.ieee.org/ielx5/5/31124/01449255.pdf?arnumber=1449255 CP - 9 J1 - Proc. IEEE KW - Tsai1969 ER - TY - JOUR T1 - A Thallous Sulphide Photo EMF Cell JF - Journal Opt. Society of America Y1 - 1939 A1 - Nix, F.C. A1 - Treptwo, A.W. VL - 29 N1 -
KW - Nix1939 ER -