TY - JOUR
T1 - Progress in thin film CIGS photovoltaics–Research and development, manufacturing, and applications
JF - Progress in Photovoltaics: Research and Applications
Y1 - 2017
A1 - Feurer, Thomas
A1 - Reinhard, Patrick
A1 - Avancini, Enrico
A1 - Bissig, Benjamin
A1 - Löckinger, Johannes
A1 - Fuchs, Peter
A1 - Carron, Romain
A1 - Weiss, Thomas Paul
A1 - Perrenoud, Julian
A1 - Stutterheim, Stephan
A1 - Buecheler, Stephan
A1 - Tiwari, Ayodhya N.
VL - 25
KW - feurer2017progress
ER -
TY - JOUR
T1 - Device characteristics of CZTSSe thin-film solar cells with 12.6% efficiency
JF - Advanced Energy Materials
Y1 - 2014
A1 - Wang, Wei
A1 - Winkler, Mark T
A1 - Oki Gunawan
A1 - Tayfun Gokmen
A1 - Todorov, Teodor K
A1 - Zhu, Yu
A1 - Mitzi, David B
VL - 4
KW - wang2014device
ER -
TY - JOUR
T1 - Band tailing and efficiency limitation in kesterite solar cells
JF - Applied Physics Letters
Y1 - 2013
A1 - Tayfun Gokmen
A1 - Oki Gunawan
A1 - Teodor K. Todorov
A1 - David B. Mitzi
VL - 103
UR - http://dx.doi.org/10.1063/1.4820250
KW - Gokmen2013
ER -
TY - JOUR
T1 - High-efficiency Cu(In,Ga)Se2 cells and modules
JF - Solar energy materials and solar cells
Y1 - 2013
A1 - Powalla, Michael
A1 - Jackson, Philip
A1 - Witte, Wolfram
A1 - Hariskos, Dimitrios
A1 - Paetel, Stefan
A1 - Tschamber, Carsten
A1 - Wischmann, Wiltraud
VL - 119
KW - powalla2013high
ER -
TY - JOUR
T1 - The Influence of Absorber Thickness on Cu(In,Ga)Se2 Solar Cells With Different Buffer Layers
JF - IEEE journal of photovoltaics
Y1 - 2013
A1 - Pettersson, Jonas
A1 - Törndahl, Tobias
A1 - Platzer-Björkman, Charlotte
A1 - Hultqvist, Adam
A1 - Edoff, Marika
VL - 3
UR - https://ieeexplore.ieee.org/abstract/document/6579660
KW - pettersson2013influence
ER -
TY - JOUR
T1 - Isotextured Silicon Solar Cell Analysis and Modeling 1: Optics
JF - IEEE Journal of Photovoltaics
Y1 - 2012
A1 - Baker-Finch, Simeon C.
A1 - McIntosh, Keith R.
A1 - Terry, Mason L.
VL - 2
CP - 4
J1 - IEEE J. Photovoltaics
KW - 533
ER -
TY - JOUR
T1 - The path towards a high-performance solution-processed kesterite solar cell
JF - Solar Energy Materials and Solar Cells
Y1 - 2011
A1 - David B. Mitzi
A1 - Oki Gunawan
A1 - Teodor K. Todorov
A1 - Kejia Wang
A1 - Supratik Guha
KW - Solution processing
AB - Despite the promise of thin-film Cu(In,Ga)(S,Se)2 (CIGSSe) chalcopyrite and CdTe photovoltaic technologies with respect to reducing cost per watt of solar energy conversion, these approaches rely on elements that are either costly and/or rare in the earth's crust (e.g., In, Ga, Te) or that present toxicity issues (e.g., Cd), thereby potentially limiting these technologies in terms of future cost reduction and production growth. In order to develop a photovoltaic technology that is truly compatible with terawatt deployment, it is desirable to consider material systems that employ less toxic and lower cost elements, while maintaining the advantages of the chalcopyrite and CdTe materials with respect to appropriate direct band gap tunability over the solar spectrum, high device performance (e.g., >10% power conversion efficiency) and compatibility with low-cost manufacturing. In this review, the development of kesterite-based Cu2ZnSn(S,Se)4 (CZTSSe) thin-film solar cells, in which the indium and gallium from \{CIGSSe\} are replaced by the readily available elements zinc and tin, will be reviewed. While vacuum-deposited devices have enabled optimization within the compositional phase space and yielded selenium-free \{CZTS\} device efficiencies of as high as 6.8%, more recently a liquid-based approach has been described that has enabled deposition of \{CZTSSe\} devices with power conversion efficiency of 9.7%, bringing the kesterite-based technology into a range of potential commercial interest. Electrical characterization studies on these high-performance \{CZTSSe\} cells reveal some of the key loss mechanisms (e.g., dominant interface recombination, high series resistance and low minority carrier lifetime) that limit the cell performance. Further elucidation of these mechanisms, as well as building an understanding of long-term device stability, are required to help propel this relatively new technology forward.
VL - 95
UR - http://www.sciencedirect.com/science/article/pii/S0927024810006719
KW - Mitzi2011
ER -
TY - JOUR
T1 - A Theoretical Search for Efficient Dopants in Mg2X (X = Si, Ge, Sn) Thermoelectric Materials
JF - Journal of Electronic Materials
Y1 - 2011
A1 - Zwolenski, P.
A1 - Tobola, J.
A1 - Kaprzyk, S.
VL - 40
UR - http://link.springer.com/10.1007/s11664-011-1624-yhttp://www.springerlink.com/index/pdf/10.1007/s11664-011-1624-y
CP - 5
J1 - Journal of Elec Materi
KW - Zwolenski2011
ER -
TY - Generic
T1 - World’s Highest Efficiency Triple-junction Solar Cells Fabricated by Inverted Layers Transfer Process
T2 - 35 IEEE Photovoltaic Specialist Conference
Y1 - 2010
A1 - Takamoto, T.
A1 - Agui, T.
A1 - Yoshida, A.
A1 - Nakaido, K.
A1 - Juso, H.
A1 - Sasaki, K.
A1 - Nakamura, K.
A1 - Yamaguchi, H.
A1 - Kodama, T.
A1 - Washio, H.
A1 - Imazumi, M.
A1 - Takahashi, M.
JA - 35 IEEE Photovoltaic Specialist Conference
CY - Honolulu HI, USA
N1 -
KW - Takamoto2010
ER -
TY - JOUR
T1 - Development of CZTS-based thin film solar cells
JF - Thin Solid Films
Y1 - 2009
A1 - Hironori Katagiri
A1 - Jimbo, Kazuo
A1 - Maw, Win Shwe
A1 - Oishi, Koichiro
A1 - Yamazaki, Makoto
A1 - Araki, Hideaki
A1 - Takeuchi, Akiko
VL - 517
KW - Katagiri2009
ER -
TY - JOUR
T1 - Structural, optical, and electrical properties of tin sulfide thin films grown by spray pyrolysis
JF - Thin Solid Films
Y1 - 2009
A1 - Calixto-Rodriguez, M.
A1 - Martinez, H.
A1 - Sanchez-Juarez, A.
A1 - Campos-Alvarez, J.
A1 - Tiburcio-Silver, A.
A1 - Calixto, M.E.
VL - 517
UR - http://linkinghub.elsevier.com/retrieve/pii/S0040609008014077http://api.elsevier.com/content/article/PII:S0040609008014077?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:S0040609008014077?httpAccept=text/plain
CP - 7
J1 - Thin Solid Films
KW - Calixto2009
ER -
TY - JOUR
T1 - Crystallinity and surface effects on Young’s modulus of CuO nanowires
JF - Applied Physics Letters
Y1 - 2007
A1 - Tan, E. P. S.
A1 - Zhu, Y.
A1 - Yu, T.
A1 - Dai, L.
A1 - Sow, C. H.
A1 - Tan, V. B. C.
A1 - Lim, C. T.
VL - 90
UR - http://link.aip.org/link/APPLAB/v90/i16/p163112/s1&Agg=doi
CP - 16
J1 - Appl. Phys. Lett.
KW - Tan2007
ER -
TY - JOUR
T1 - Nanocrystalline CuO films prepared by pyrolysis of Cu-arachidate LB multilayers
JF - Colloids and Surfaces A: Physicochemical and Engineering Aspects
Y1 - 2005
A1 - Parhizkar, M.
A1 - Singh, Sukhvinder
A1 - Nayak, P.K.
A1 - Kumar, Nigvendra
A1 - Muthe, K.P.
A1 - Gupta, S.K.
A1 - Srinivasa, R.S.
A1 - Talwar, S.S.
A1 - Major, S.S.
VL - 257-258
UR - http://linkinghub.elsevier.com/retrieve/pii/S0927775704007320
J1 - Colloids and Surfaces A: Physicochemical and Engineering Aspects
KW - Parhizkar2005
ER -
TY - JOUR
T1 - Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence
JF - Applied Physics Letters
Y1 - 2005
A1 - Takashi Fuyuki
A1 - Hayato Kondo
A1 - Tsutomu Yamazaki
A1 - Yu Takahashi
A1 - Yukiharu Uraoka
KW - carrier lifetime
KW - electroluminescence
KW - elemental semiconductors
KW - MINORITY CARRIERS
KW - SILICON
KW - solar cells
PB - AIP
VL - 86
UR - http://link.aip.org/link/?APL/86/262108/1
KW - Fuyuki2005
ER -
TY - JOUR
T1 - Thermoelectric properties of Bi-doped Mg2Si semiconductors
JF - Physica B: Condensed Matter
Y1 - 2005
A1 - Tani, Jun-ichi
A1 - Kido, Hiroyasu
VL - 364
UR - http://linkinghub.elsevier.com/retrieve/pii/S092145260500709X
CP - 1-4
J1 - Physica B: Condensed Matter
KW - Tani2005
ER -
TY - JOUR
T1 - Effects of NaF coevaporation on structural properties of Cu (In, Ga) Se2 thin films
JF - Thin Solid Films
Y1 - 2003
A1 - Rudmann, D
A1 - Bilger, G
A1 - Kaelin, M
A1 - Haug, F-J
A1 - Zogg, H
A1 - Tiwari, AN
VL - 431
KW - rudmann2003effects
ER -
TY - JOUR
T1 - Specifying targets of future research in photovoltaic devices containing pyrite (FeS2) by numerical modelling
JF - Solar Energy Materials and Solar Cells
Y1 - 2002
A1 - Pietro P Altermatt
A1 - Kiesewetter, Tobias
A1 - Ellmer, Klaus
A1 - Tributsch, Helmut
VL - 71
UR - http://linkinghub.elsevier.com/retrieve/pii/S0927024801000538http://api.elsevier.com/content/article/PII:S0927024801000538?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:S0927024801000538?httpAccept=text/plain
CP - 2
J1 - Solar Energy Materials and Solar Cells
KW - altermatt2002
ER -
TY - JOUR
T1 - ZnSe thin films grown by chemical vapour deposition for application as buffer layer in CIGSS solar cells
JF - Thin Solid Films
Y1 - 2000
A1 - Rumberg, A.
A1 - Sommerhalter, Ch.
A1 - Toplak, M.
A1 - Jäger-Waldau, A.
A1 - Lux-Steiner, M.Ch.
VL - 361-362
UR - http://linkinghub.elsevier.com/retrieve/pii/S0040609099007907http://api.elsevier.com/content/article/PII:S0040609099007907?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:S0040609099007907?httpAccept=text/plain
J1 - Thin Solid Films
KW - rumberg2000
ER -
TY - JOUR
T1 - Photoeffects in cobalt doped pyrite (FeS 2 ) films
JF - Solid State Communications
Y1 - 1999
A1 - Thomas, B.
A1 - Ellmer, K.
A1 - Bohne, W.
A1 - Röhrich, J.
A1 - Kunst, M.
A1 - Tributsch, H.
VL - 111
UR - http://linkinghub.elsevier.com/retrieve/pii/S0038109899002136http://api.elsevier.com/content/article/PII:S0038109899002136?httpAccept=text/plainhttp://api.elsevier.com/content/article/PII:S0038109899002136?httpAccept=text/xml
CP - 5
J1 - Solid State Communications
KW - thomas1999
ER -
TY - JOUR
T1 - Process and characterisation of chemical bath deposited manganese sulphide (MnS) thin films
JF - Thin Solid Films
Y1 - 1998
A1 - Lokhande, C.D.
A1 - Ennaoui, A.
A1 - Patil, P.S.
A1 - Giersig, M.
A1 - Muller, M.
A1 - Diesner, K.
A1 - Tributsch, H.
VL - 330
UR - http://linkinghub.elsevier.com/retrieve/pii/S0040609098005008
CP - 2
J1 - Thin Solid Films
KW - Lokhande1998
ER -
TY - CONF
T1 - Investigation on SnS film by RF sputtering for photovoltaic application
T2 - 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)
Y1 - 1994
A1 - Wei Guang-Pu
A1 - Zhang Zhi-Lin
A1 - Zhao Wei-Ming
A1 - Gao Xiang-Hong
A1 - Chen Wei-Qun
A1 - Tanamura, H.
A1 - Yamaguchi, M.
A1 - Noguchi, H.
A1 - Nagatomo, T.
A1 - Omoto, O.
JA - 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)
PB - IEEE
CY - Waikoloa, HI, USA
UR - http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=519977
KW - Pu1994
ER -
TY - JOUR
T1 - Accurate measurements of the silicon intrinsic carrier density from 78 to 340 K
JF - Journal of Applied Physics
Y1 - 1993
A1 - Misiakos, Konstantinos
A1 - Tsamakis, Dimitris
AB - The intrinsic carrier density in silicon has been measured by a novel technique based on low‐frequency capacitance measurements of a p+‐i‐n+ diode biased in high injection. The major advantage of the method is its insensitivity to uncertainties regarding the exact values of the carrier mobilities, the recombination parameters, and the doping density. The intrinsic carrier density was measured in the temperature range from 78 to 340 K. At 300 K the value of ni was found to be (9.7±0.1)×10^9 cm−3.
VL - 74
CP - 5
J1 - J. Appl. Phys.
KW - Misiakos93
ER -
TY - JOUR
T1 - Optical properties of ZnSe
JF - Physical Review B
Y1 - 1991
A1 - Adachi, Sadao
A1 - Taguchi, Tsunemasa
VL - 43
UR - https://link.aps.org/doi/10.1103/PhysRevB.43.9569http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.43.9569/fulltexthttp://link.aps.org/article/10.1103/PhysRevB.43.9569
CP - 12
J1 - Phys. Rev. B
KW - adachi1991
ER -
TY - JOUR
T1 - Limiting Efficiency of Silicon Solar Cells
JF - IEEE TRANSACTIONS ON ELECTRON DEVICES
Y1 - 1984
A1 - T. Tiedje
A1 - E Yablonovich
A1 - G.D. Cody
A1 - B.G. Brooks
VL - ED-31
N1 -
KW - Tiedje1984
ER -
TY - ABST
T1 - The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon
Y1 - 1981
A1 - W R Thurber
A1 - Mattis
A1 - Liu
A1 - Filliben
PB - U.S. Department of Commerce National Bureau of Standards
N1 -
KW - Thurber1981
ER -
TY - JOUR
T1 - Resistivity-Dopant Density Relationship for Boron-Doped Silicon
JF - Journal of The Electrochemical Society
Y1 - 1980
A1 - W R Thurber
A1 - R. L. Mattis
A1 - Y. M. Liu
A1 - J. J. Filliben
KW - boron
KW - electrical resistivity
KW - Hall effect
KW - hole density
KW - semiconductor doping
KW - SILICON
PB - ECS
VL - 127
UR - http://link.aip.org/link/?JES/127/2291/1
N1 -
KW - Thurber1980boron
ER -
TY - JOUR
T1 - Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon
JF - Journal of The Electrochemical Society
Y1 - 1980
A1 - W R Thurber
A1 - R. L. Mattis
A1 - Y. M. Liu
A1 - J. J. Filliben
KW - density
KW - electrical resistivity
KW - electron mobility
KW - Hall effect
KW - neutron activation analysis
KW - phosphorus
KW - photometry
KW - semiconductor doping
KW - SILICON
PB - ECS
VL - 127
UR - http://link.aip.org/link/?JES/127/1807/1
KW - Thurber1980phos
ER -
TY - JOUR
T1 - Intercalation and lattice expansion in titanium disulfide
JF - The Journal of Chemical Physics
Y1 - 1975
A1 - Stanley M Whittingham
A1 - Arthur H Thompson
AB - The temperature coefficient of expansion has been measured for the a and c axes of titanium disulfide, and of its intercalates with a metal, lithium, and an organic base, s−collidine. The anisotropy in the expansion coefficients is related to the bonding in the structure.
VL - 62
UR - http://link.aip.org/link/?JCP/62/1588/1&Agg=doi
CP - 4
J1 - J. Chem. Phys.
KW - Whittingham1975
ER -
TY - JOUR
T1 - Shallow phosphorus diffusion profiles in silicon
JF - Proceedings of the IEEE
Y1 - 1969
A1 - Tsai, J.C.C.
VL - 57
UR - http://ieeexplore.ieee.org/document/1449255/http://xplorestaging.ieee.org/ielx5/5/31124/01449255.pdf?arnumber=1449255
CP - 9
J1 - Proc. IEEE
KW - Tsai1969
ER -
TY - JOUR
T1 - A Thallous Sulphide Photo EMF Cell
JF - Journal Opt. Society of America
Y1 - 1939
A1 - Nix, F.C.
A1 - Treptwo, A.W.
VL - 29
N1 -
KW - Nix1939
ER -