TY - JOUR T1 - General parameterization of Auger recombination in crystalline silicon JF - Journal of Applied Physics Y1 - 2002 A1 - Mark J Kerr A1 - Andrés Cuevas KW - Auger effect KW - carrier lifetime KW - electron-hole recombination KW - elemental semiconductors KW - SILICON PB - AIP VL - 91 UR - http://link.aip.org/link/?JAP/91/2473/1 KW - Kerr2002 ER - TY - JOUR T1 - Generalized analysis of quasi-steady-state and transient decay open circuit voltage measurements JF - Journal of Applied Physics Y1 - 2002 A1 - Mark J Kerr A1 - Andrés Cuevas A1 - Ronald A. Sinton AB - The current–voltage characteristics of solar cells and photodiodes can be determined by measuring the open-circuit voltage as a function of a slowly varying light intensity. This article presents a detailed theoretical analysis and interpretation of such quasi-steady-state Voc measurements (QssVoc). The ability of this analysis to accurately obtain the true steady-state device characteristics even in the case of high lifetime, high resistivity silicon devices is demonstrated experimentally. The QssVoc technique can be used to determine the minority carrier lifetime, and the new generalized analysis is required to do this accurately. An important outcome is that solar cell and diode device characteristics can be obtained from measurements of either the photoconductance or the open-circuit voltage, even using transient techniques. VL - 91 N1 -
KW - Kerr2002 ER - TY - JOUR T1 - Coulomb-enhanced Auger recombination in crystalline silicon at intermediate and high injection densities JF - Journal of Applied Physics Y1 - 2000 A1 - Jan Schmidt A1 - Mark J Kerr A1 - Pietro P Altermatt KW - Auger effect KW - carrier lifetime KW - electron-hole recombination KW - elemental semiconductors KW - photoconductivity KW - SILICON PB - AIP VL - 88 UR - http://link.aip.org/link/?JAP/88/1494/1 KW - Schmidt2000 ER -