01676nas a2200265 4500008004100000022001400041245011300055210006900168300001200237490001000249520089300259653001201152653001001164653002001174653002101194653002301215653002901238653003301267653001501300653001201315100001501327700001401342700001301356856004101369 1983 eng d a0018-938300aModeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon0 aModeling of carrier mobility against carrier concentration in ar a764–90 vED-303 a
New carrier mobility data for both arsenic- and boron-doped silicon are presented in the high doping range. The data definitely show that the electron mobility in As-doped silicon is significantly lower than in P-doped silicon for carrier concentrations higher than 1019 cm-3. By integrating these data with those previously published, empirical relationships able to model the carrier mobility against carrier concentration in the whole experimental range examined to date (about eight decades in concentration) for As-, P-, and B-doped silicon are derived. Different parameters in the expression for the n-type dopants provide differentiation between the electron mobility in As- and P-doped silicon. Finally, it is shown that these new expressions, once implemented in the {SUPREM} {II} process simulator, lead to reduced errors in the simulation of the sheet resistance values
10aarsenic10aboron10aCARRIER DENSITY10acarrier mobility10adigital simulation10aelemental semiconductors10aheavily doped semiconductors10aphosphorus10aSILICON1 aMasetti, G1 aSeveri, M1 aSolmi, S uhttps://www.pveducation.org/node/350