00566nas a2200181 4500008004100000245006200041210005300103300001200156490000800168100002100176700002000197700001900217700002400236700001900260700002300279700002400302856005800326 2013 eng d00aHigh-efficiency Cu(In,Ga)Se2 cells and modules0 aHighefficiency CuInGaSesub2sub cells and modules a51–580 v1191 aPowalla, Michael1 aJackson, Philip1 aWitte, Wolfram1 aHariskos, Dimitrios1 aPaetel, Stefan1 aTschamber, Carsten1 aWischmann, Wiltraud uhttps://www.pveducation.org/reference/powalla2013high02886nas a2200181 4500008004100000245008100041210006900122260002900191520231200220653002902532653002302561653001602584653001802600653001802618653001002636100001702646856004102663 2011 eng d00aHeterojunction and Nanostructured Photovoltaic Device: Theory and Experiment0 aHeterojunction and Nanostructured Photovoltaic Device Theory and bArizona State University3 aA primary motivation of research in photovoltaic technology is to obtain higher efficiency photovoltaic devices at reduced cost of production so that solar electricity can be cost competitive. The majority of photovoltaic technologies are based on p-n junction, with efficiency potential being much lower than the thermodynamic limits of individual technologies and thereby providing substantial scope for further improvements in efficiency. The thesis explores photovoltaic devices using new physical processes that rely on thin layers and are capable of attaining the thermodynamic limit of photovoltaic technology. Silicon heterostructure is one of the candidate technologies in which thin films induce a minority carrier collecting junction in silicon and the devices can achieve efficiency close to the thermodynamic limits of silicon technology. The thesis proposes and experimentally establishes a new theory explaining the operation of silicon heterostructure solar cells. The theory will assist in identifying the optimum properties of thin film materials for silicon heterostructure and help in design and characterization of the devices, along with aiding in developing new devices based on this technology. The efficiency potential of silicon heterostructure is constrained by the thermodynamic limit (31%) of single junction solar cell and is considerably lower than the limit of photovoltaic conversion (\textasciitilde 80 %). A further improvement in photovoltaic conversion efficiency is possible by implementing a multiple quasi-fermi level system (MQFL). A MQFL allows the absorption of sub band gap photons with current being extracted at a higher band-gap, thereby allowing to overcome the efficiency limit of single junction devices. A MQFL can be realized either by thin epitaxial layers of alternating higher and lower band gap material with nearly lattice matched (quantum well) or highly lattice mismatched (quantum dot) structure. The thesis identifies the material combination for quantum well structure and calculates the absorption coefficient of a MQFl based on quantum well. GaAsSb (barrier)/InAs(dot) was identified as a candidate material for MQFL using quantum dot. The thesis explains the growth mechanism of GaAsSb and the optimization of GaAsSb and GaAs heterointerface.10aa-Si/c-Si heterojunction10aAlternative energy10aEngineering10aNanostructure10aPhotovoltaics10aSolar1 aGhosh, Kunal uhttp://hdl.handle.net/2286/R.I.1431200489nas a2200133 4500008004100000020001800041245005300059210005300112260004800165300000900213100001300222700001500235856010500250 2003 eng d a0-471-49196-900aHandbook of Photovoltaic Science and Engineering0 aHandbook of Photovoltaic Science and Engineering aChichester, EnglandbJohn Wiley & Sons Ltd. a11171 aLuque, A1 aHegedus, S uhttp://www.amazon.com/Handbook-Photovoltaic-Science-Engineering-Antonio/dp/0471491969/ref=pd_sim_b_701080nas a2200157 4500008004100000022001300041245008500054210006900139260001600208300001400224490000700238520059300245100002200838700002100860856004100881 2001 eng d a0927024800aHigh performance light trapping textures for monocrystalline silicon solar cells0 aHigh performance light trapping textures for monocrystalline sil cJan-01-2001 a369 - 3750 v653 aTwo novel texture schemes for the front of a c-Si silicon wafer solar cell are presented. The “bipyramid” texture is of two inverted pyramids of similar sizes laid out in alternating order. The “patch” texture uses a checkerboard layout of blocks of parallel grooves, with the grooves of alternating blocks perpendicularly oriented to each other. We estimate that these textures, which almost fully trap light for the first six passes through the substrate, can deliver better optical performance than the standard inverted pyramid texture, especially in narrow-band applications.1 aCampbell, Patrick1 aGreen, Martin, A uhttps://www.pveducation.org/node/52600498nas a2200133 4500008004100000245006500041210006500106100003000171700001400201700001500215700001600230700001500246856010300261 1997 eng d00aHeterojunctions based on Cu2ZnSnS4 and Cu2ZnSnSe4 thin films0 aHeterojunctions based on Cu2ZnSnS4 and Cu2ZnSnSe4 thin films1 aFriedlmeier, Th, Magorian1 aWieser, N1 aWalter, Th1 aDittrich, H1 aSchock, HW uhttps://www.pveducation.org/reference/heterojunctions-based-on-cu2znsns4-and-cu2znsnse4-thin-films01672nas a2200181 4500008004100000245007700041210006900118300000900187490000700196520113400203100002101337700001701358700001901375700001601394700001501410700001501425856005001440 1979 eng d00aHall coefficient and reflectivity evidence that TiS 2 is a semiconductor0 aHall coefficient and reflectivity evidence that TiS 2 is a semic aL5210 v123 aA series of measurements of the Hall coefficient, infrared reflectivity, thermoelectric power and electrical resistivity of Ti 1+x S 2 single crystals with various degrees of stoichiometry is described, where, for the first time, each measurement was made on the same crystal (or crystals from the same batch). None of these measurements taken alone can distinguish between the semimetallic or semiconducting models of TiS 2 . However, by making all four measurements on each sample, it has been possible to establish correlations between the results for different samples. It was found that the product of the Hall coefficient and the square of the plasma frequency is the same for all samples, a result that is consistent with a semiconductor model, but is inconsistent with a semimetal. Nevertheless the most stoichiometric samples remain metallic with electron concentrations of 2*10 20 cm -3 . It was also found that the resistivity data cannot be explained by carrier-carrier or optical phonon scattering. Therefore, both the source of the residual conduction electrons and the scattering mechanism in TiS 2 remain unknown.1 aLogothetis, E, M1 aKaiser, W, J1 aKukkonen, C, A1 aFaile, S, P1 aColella, R1 aGambold, J uhttp://stacks.iop.org/0022-3719/12/i=13/a=00700658nas a2200193 4500008004100000022001400041245010200055210006900157260001600226300001600242490000700258100002100265700001700286700001900303700001600322700001500338700001500353856009600368 1979 eng d a0022-371900aHall coefficient and reflectivity evidence that TiS 2 is a semiconductor0 aHall coefficient and reflectivity evidence that TiS sub2sub is a cFeb-07-1980 aL521 - L5260 v121 aLogothetis, E, M1 aKaiser, W, J1 aKukkonen, C, A1 aFaile, S, P1 aColella, R1 aGambold, J uhttp://stacks.iop.org/0022-3719/12/i=13/a=007?key=crossref.7b34e84721f0d96f60dce7c3e44ba4c700291nas a2200097 4500008004100000245004200041210004200083260001500125100001200140856004100152 1976 eng d00aHistorical Development of Solar Cells0 aHistorical Development of Solar Cells bIEEE Press1 aWolf, M uhttps://www.pveducation.org/node/40900957nas a2200145 4500008004100000022001300041245007800054210006900132260001600201300000900217490000700226520052400233100001300757856004100770 1971 eng d a0021897900aHigh Electron Mobility in Zinc Selenide Through Low-Temperature Annealing0 aHigh Electron Mobility in Zinc Selenide Through LowTemperature A cJan-01-1971 a12040 v423 aElectron mobility in ZnSe has been measured between 40° and 400°K. It is shown that through repeated annealing in liquid Zn the mobility maximum can be increased to 12 000 cm2∕V sec. This is one of the highest mobilities measured for semiconductors with band gaps as wide as that of ZnSe (2.7 eV). The increase in mobility is mainly due to elimination of doubly charged acceptor states. The residual scattering is believed to be due, in part, to charged isolated impurities and, in part, to paired impurity dipoles.1 aAven, M. uhttps://www.pveducation.org/node/53100378nas a2200121 4500008004100000245004000041210004000081260005600121300000700177100001200184700001900196856004100215 1960 eng d00aHigh efficiency silicon solar cells0 aHigh efficiency silicon solar cells bU.S. Army Signal Research and Development Labc1960 a221 aDale, B1 aRudenberg, H G uhttps://www.pveducation.org/node/299