01440nas a2200181 4500008004100000022001300041245010300054210006900157260001600226300000900242490000700251520087500258100002501133700002001158700002001178700001901198856004101217 2003 eng d a0021897900aReassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing0 aReassessment of the intrinsic carrier density in crystalline sil cJan-01-2003 a15980 v933 aThe commonly used value of the intrinsic carrier density of crystalline silicon at 300 K is ni=1.00×1010 cm−3. It was experimentally determined by Sproul and Green, J. Appl. Phys. 70, 846 (1991), using specially designed solar cells. In this article, we demonstrate that the Sproul and Green experiment was influenced by band-gap narrowing, even though the dopant density of their samples was low (1014 to 1016 cm−3). We reinterpret their measurements by numerical simulations with a random-phase approximation model for band-gap narrowing, thereby obtaining ni=9.65×109 cm−3 at 300 K. This value is consistent with results obtained by Misiakos and Tsamakis, J. Appl. Phys. 74, 3293 (1993), using capacitance measurements. In this way, long-prevailing inconsistencies between independent measurement techniques for the determination of ni are resolved.1 aAltermatt, Pietro, P1 aSchenk, Andreas1 aGeelhaar, Frank1 aHeiser, Gernot uhttps://www.pveducation.org/node/54300763nas a2200169 4500008004100000022001300041245011400054210006900168260001600237300001400253490000700267100002500274700002400299700001800323700002200341856023000363 2002 eng d a0927024800aSpecifying targets of future research in photovoltaic devices containing pyrite (FeS2) by numerical modelling0 aSpecifying targets of future research in photovoltaic devices co cJan-02-2002 a181 - 1950 v711 aAltermatt, Pietro, P1 aKiesewetter, Tobias1 aEllmer, Klaus1 aTributsch, Helmut uhttp://linkinghub.elsevier.com/retrieve/pii/S0927024801000538http://api.elsevier.com/content/article/PII:S0927024801000538?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:S0927024801000538?httpAccept=text/plain01300nas a2200145 4500008004100000245009100041210006900132300001500201490000700216520074700223100002500970700001600995700001401011856012901025 2001 eng d00aImprovements in numerical modelling of highly injected crystalline silicon solar cells0 aImprovements in numerical modelling of highly injected crystalli a149-155(7)0 v653 a
We numerically model crystalline silicon concentrator cells with the inclusion of band gap narrowing (BGN) caused by injected free carriers. In previous studies, the revised room-temperature value of the intrinsic carrier density, ni=1.00x1010cm-3, was inconsistent with the other material parameters of highly injected silicon. In this paper, we show that high-injection experiments can be described consistently with the revised value of ni if free-carrier induced BGN is included, and that such BGN is an important effect in silicon concentrator cells. The new model presented here significantly improves the ability to model highly injected silicon cells with a high level of precision.
1 aAltermatt, Pietro, P1 aSinton, R A1 aHeiser, G uhttp://www.ingentaconnect.com/content/els/09270248/2001/00000065/00000001/art00089" doi = "doi:10.1016/S0927-0248(00)00089-100703nas a2200217 4500008004100000245010900041210006900150260000800219300001400227490000700241653001700248653002100265653003200286653002900318653002200347653001200369100001700381700001800398700002500416856004400441 2000 eng d00aCoulomb-enhanced Auger recombination in crystalline silicon at intermediate and high injection densities0 aCoulombenhanced Auger recombination in crystalline silicon at in bAIP a1494-14970 v8810aAuger effect10acarrier lifetime10aelectron-hole recombination10aelemental semiconductors10aphotoconductivity10aSILICON1 aSchmidt, Jan1 aKerr, Mark, J1 aAltermatt, Pietro, P uhttp://link.aip.org/link/?JAP/88/1494/100442nas a2200133 4500008004100000245007500041210006900116300001400185100001500199700001400214700002500228700001400253856004100267 2000 eng d00aSimulating Electron-Beam-Induced Current Profiles Across p-n Junctions0 aSimulating ElectronBeamInduced Current Profiles Across pn Juncti a1590-15931 aCorkish, R1 aLuke, K L1 aAltermatt, Pietro, P1 aHeiser, G uhttps://www.pveducation.org/node/29500530nas a2200157 4500008004100000020001800041245007500059210006900134260004600203300001400249100001500263700001400278700002500292700001400317856004100331 2000 eng d a978190291618700aSimulating Electron-Beam-Induced Current Profiles Across p-n Junctions0 aSimulating ElectronBeamInduced Current Profiles Across pn Juncti aGlasgow UKbJames and Jamesc1-5 May 2000 a1590-15931 aCorkish, R1 aLuke, K L1 aAltermatt, Pietro, P1 aHeiser, G uhttps://www.pveducation.org/node/296