00803nas a2200241 4500008004100000245010500041210007100146300001400217490000700231100001900238700002200257700002100279700002100300700002500321700001700346700001900363700002400382700002200406700002500428700002300453700002400476856006100500 2017 eng d00aProgress in thin film CIGS photovoltaics–Research and development, manufacturing, and applications0 aProgress in thin film CIGS photovoltaics–Research and developmen a645–6670 v251 aFeurer, Thomas1 aReinhard, Patrick1 aAvancini, Enrico1 aBissig, Benjamin1 aLöckinger, Johannes1 aFuchs, Peter1 aCarron, Romain1 aWeiss, Thomas, Paul1 aPerrenoud, Julian1 aStutterheim, Stephan1 aBuecheler, Stephan1 aTiwari, Ayodhya, N. uhttps://www.pveducation.org/reference/feurer2017progress00591nas a2200169 4500008004100000245010900041210006900150300001400219490000700233100002000240700001800260700002400278700001800302700001900320700002100339856006100360 2016 eng d00aEffects of heavy alkali elements in Cu (In, Ga) Se2 solar cells with efficiencies up to 22.6%0 aEffects of heavy alkali elements in Cu In Ga Sesub2sub solar cel a583–5860 v101 aJackson, Philip1 aWuerz, Roland1 aHariskos, Dimitrios1 aLotter, Erwin1 aWitte, Wolfram1 aPowalla, Michael uhttps://www.pveducation.org/reference/jackson2016effects00610nas a2200169 4500008004100000245008100041210006900122490000600191100001400197700002100211700001700232700001900249700002300268700001200291700002000303856011700323 2014 eng d00aDevice characteristics of CZTSSe thin-film solar cells with 12.6% efficiency0 aDevice characteristics of CZTSSe thinfilm solar cells with 126 e0 v41 aWang, Wei1 aWinkler, Mark, T1 aGunawan, Oki1 aGokmen, Tayfun1 aTodorov, Teodor, K1 aZhu, Yu1 aMitzi, David, B uhttps://www.pveducation.org/reference/device-characteristics-of-cztsse-thin-film-solar-cells-with-126-efficiency00566nas a2200181 4500008004100000245006200041210005300103300001200156490000800168100002100176700002000197700001900217700002400236700001900260700002300279700002400302856005800326 2013 eng d00aHigh-efficiency Cu(In,Ga)Se2 cells and modules0 aHighefficiency CuInGaSesub2sub cells and modules a51–580 v1191 aPowalla, Michael1 aJackson, Philip1 aWitte, Wolfram1 aHariskos, Dimitrios1 aPaetel, Stefan1 aTschamber, Carsten1 aWischmann, Wiltraud uhttps://www.pveducation.org/reference/powalla2013high01809nas a2200181 4500008004100000022001400041245008400055210006900139260001600208490000700224520125700231100001901488700002201507700002001529700001701549700002001566856004101586 2012 eng d a1098-012100aImproved quantitative description of Auger recombination in crystalline silicon0 aImproved quantitative description of Auger recombination in crys cJan-10-20120 v863 aAn accurate quantitative description of the Auger recombination rate in silicon as a function of the dopant density and the carrier injection level is important to understand the physics of this fundamental mechanism and to predict the physical limits to the performance of silicon based devices. Technological progress has permitted a near suppression of competing recombination mechanisms, both in the bulk of the silicon crystal and at the surfaces. This, coupled with advanced characterization techniques, has led to an improved determination of the Auger recombination rate, which is lower than previously thought. In this contribution we present a systematic study of the injection-dependent carrier recombination for a broad range of dopant concentrations of high-purity n-type and p-type silicon wafers passivated with state-of-the-art dielectric layers of aluminum oxide or silicon nitride. Based on these measurements, we develop a general parametrization for intrinsic recombination in crystalline silicon at 300 K consistent with the theory of Coulomb-enhanced Auger and radiative recombination. Based on this improved description we are able to analyze physical aspects of the Auger recombination mechanism such as the Coulomb enhancement.1 aRichter, Armin1 aGlunz, Stefan, W.1 aWerner, Florian1 aSchmidt, Jan1 aCuevas, Andrés uhttps://www.pveducation.org/node/52502563nas a2200193 4500008004100000022001400041245008000055210006900135300001600204490000700220520195000227653002402177100002102201700001702222700002402239700001602263700001902279856007102298 2011 eng d a0927-024800aThe path towards a high-performance solution-processed kesterite solar cell0 apath towards a highperformance solutionprocessed kesterite solar a1421 - 14360 v953 aDespite the promise of thin-film Cu(In,Ga)(S,Se)2 (CIGSSe) chalcopyrite and CdTe photovoltaic technologies with respect to reducing cost per watt of solar energy conversion, these approaches rely on elements that are either costly and/or rare in the earth's crust (e.g., In, Ga, Te) or that present toxicity issues (e.g., Cd), thereby potentially limiting these technologies in terms of future cost reduction and production growth. In order to develop a photovoltaic technology that is truly compatible with terawatt deployment, it is desirable to consider material systems that employ less toxic and lower cost elements, while maintaining the advantages of the chalcopyrite and CdTe materials with respect to appropriate direct band gap tunability over the solar spectrum, high device performance (e.g., >10% power conversion efficiency) and compatibility with low-cost manufacturing. In this review, the development of kesterite-based Cu2ZnSn(S,Se)4 (CZTSSe) thin-film solar cells, in which the indium and gallium from \{CIGSSe\} are replaced by the readily available elements zinc and tin, will be reviewed. While vacuum-deposited devices have enabled optimization within the compositional phase space and yielded selenium-free \{CZTS\} device efficiencies of as high as 6.8%, more recently a liquid-based approach has been described that has enabled deposition of \{CZTSSe\} devices with power conversion efficiency of 9.7%, bringing the kesterite-based technology into a range of potential commercial interest. Electrical characterization studies on these high-performance \{CZTSSe\} cells reveal some of the key loss mechanisms (e.g., dominant interface recombination, high series resistance and low minority carrier lifetime) that limit the cell performance. Further elucidation of these mechanisms, as well as building an understanding of long-term device stability, are required to help propel this relatively new technology forward.10aSolution processing1 aMitzi, David, B.1 aGunawan, Oki1 aTodorov, Teodor, K.1 aWang, Kejia1 aGuha, Supratik uhttp://www.sciencedirect.com/science/article/pii/S092702481000671900582nas a2200193 4500008004100000245004800041210004700089260002700136100002200163700002000185700002100205700001800226700001900244700001800263700002100281700002000302700002500322856004100347 2010 eng d00aGen III: Improved Performance at Lower Cost0 aGen III Improved Performance at Lower Cost aHonolulu, HawaiibIEEE1 aCousins, Peter, J1 aSmith, David, D1 aLuan, Hsin-Chiao1 aManning, Jane1 aDennis, Tim, D1 aWaldhaue, Ann1 aWilson, Karen, E1 aHarley, Gabriel1 aMulligan, William, P uhttps://www.pveducation.org/node/29700610nas a2200193 4500008004100000022001400041245009000055210007100145260001600216300000900232490000700241100002400248700002000272700002000292700002800312700001700340700002000357856003900377 2010 eng d a1463-926200aGreen synthesis of tunable Cu(In1−xGax)Se2 nanoparticles using non-organic solvents0 aGreen synthesis of tunable CuIn1−xGaxSe2 nanoparticles using non cJan-01-2010 a12480 v121 aJuhaiman, Layla, Al1 aScoles, Ludmila1 aKingston, David1 aPatarachao, Bussaraporn1 aWang, Dashan1 aBensebaa, Farid uhttp://xlink.rsc.org/?DOI=c001813a00929nas a2200229 4500008004100000022001300041245004600054210004400100300001400144490000700158520030600165653002600471653002200497653001600519653001700535653002700552100002100579700001700600700002500617700001900642856003800661 2010 eng d a1062799500aSolar cell efficiency tables (version 35)0 aSolar cell efficiency tables version 35 a144–1500 v183 a
Consolidated tables showing an extensive listing of the highest independently confirmed efficiencies for solar cells and modules are presented. Guidelines for inclusion of results into these tables are outlined and new entries since July 2009 are reviewed. Copyright 2010 John Wiley Sons, Ltd.
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820 v161 aWooster, W, A uhttp://stacks.iop.org/0034-4885/16/i=1/a=302?key=crossref.19db72555e28e5cd250540ab6a94650000501nas a2200145 4500008004100000022001300041245012300054210006900177300001200246490000700258100001200265700001600277700002100293856004100314 2001 eng d a0927024800a24.5% efficiency PERT silicon solar cells on SEH MCZ substrates and cell performance on other SEH CZ and FZ substrates0 a245 efficiency PERT silicon solar cells on SEH MCZ substrates an a27 - 360 v661 aZhao, J1 aWang, Aihua1 aGreen, Martin, A uhttps://www.pveducation.org/node/41400574nas a2200181 4500008004100000022001400041245006200055210006200117300001400179490000700193653001200200100002200212700001200234700001300246700001600259700001600275856010100291 2001 eng d a0927-024800aDegradation of carrier lifetime in Cz silicon solar cells0 aDegradation of carrier lifetime in Cz silicon solar cells a219 - 2290 v6510aDefects1 aGlunz, Stefan, W.1 aRein, S1 aWarta, W1 aKnobloch, J1 aWettling, W uhttp://www.sciencedirect.com/science/article/B6V51-419BGN3-11/2/7ba9d473113c89089b6e79c1cd46775f00456nas a2200133 4500008004100000245008400041210006900125300001600194490000700210100001700217700001400234700001700248856005700265 1999 eng d00aEffects of Na on the electrical and structural properties of CuInSe20 aEffects of Na on the electrical and structural properties of CuI a7214–72180 v851 aWei, Su-Huai1 aZhang, SB1 aZunger, Alex uhttps://www.pveducation.org/reference/wei1999effects00433nas a2200121 4500008004100000245009500041210006900136260002000205100001200225700001200237700002100249856004100270 1998 eng d00a19.8% Efficient Multicrystalline Silicon Solar Cells with Honeycomb Textured Front Surface0 a198 Efficient Multicrystalline Silicon Solar Cells with Honeycom aVienna, Austria1 aZhao, J1 aWang, A1 aGreen, Martin, A uhttps://www.pveducation.org/node/41300659nas a2200205 4500008004100000245011400041210006900155260000800224300001400232490000700246653002900253653001200282653001600294653002000310100001800330700001600348700002100364700002400385856004400409 1998 eng d00a19.8% efficient "honeycomb" textured multicrystalline and 24.4% monocrystalline silicon solar cells0 a198 efficient quothoneycombquot textured multicrystalline and 24 bAIP a1991-19930 v7310aelemental semiconductors10aSILICON10asolar cells10asurface texture1 aZhao, Jianhua1 aWang, Aihua1 aGreen, Martin, A1 aFerrazza, Francesca uhttp://link.aip.org/link/?APL/73/1991/100535nas a2200181 4500008004100000245008200041210006900123300001400192490000600206100001200212700001200224700001100236700001300247700001500260700001600275700002100291856004100312 1997 eng d00a20,000 PERL silicon cells for the "1996 World Solar Challenge" solar car race0 a20000 PERL silicon cells for the 1996 World Solar Challenge sola a269–2760 v51 aZhao, J1 aWang, A1 aYun, F1 aZhang, G1 aRoche, D M1 aWenham, S R1 aGreen, Martin, A uhttps://www.pveducation.org/node/41600498nas a2200133 4500008004100000245006500041210006500106100003000171700001400201700001500215700001600230700001500246856010300261 1997 eng d00aHeterojunctions based on Cu2ZnSnS4 and Cu2ZnSnSe4 thin films0 aHeterojunctions based on Cu2ZnSnS4 and Cu2ZnSnSe4 thin films1 aFriedlmeier, Th, Magorian1 aWieser, N1 aWalter, Th1 aDittrich, H1 aSchock, HW uhttps://www.pveducation.org/reference/heterojunctions-based-on-cu2znsns4-and-cu2znsnse4-thin-films00420nas a2200145 4500008004100000022001400041245004300055210004300098260001600141300001400157490000600171100002300177700002400200856005000224 1994 eng d a0935-964800aCVD routes to titanium disulfide films0 aCVD routes to titanium disulfide films cJan-03-1994 a237 - 2390 v61 aLewkebandara, T.S.1 aWinter, Charles, H. uhttp://doi.wiley.com/10.1002/adma.1994006031300669nas a2200205 4500008004100000245007600041210006900117260002800186100001800214700001900232700001900251700002000270700001800290700001700308700001800325700001600343700001700359700001400376856007300390 1994 eng d00aInvestigation on SnS film by RF sputtering for photovoltaic application0 aInvestigation on SnS film by RF sputtering for photovoltaic appl aWaikoloa, HI, USAbIEEE1 aGuang-Pu, Wei1 aZhi-Lin, Zhang1 aWei-Ming, Zhao1 aXiang-Hong, Gao1 aWei-Qun, Chen1 aTanamura, H.1 aYamaguchi, M.1 aNoguchi, H.1 aNagatomo, T.1 aOmoto, O. uhttp://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=51997700444nas a2200121 4500008004100000245009400041210006900135260001900204100002100223700001600244700002100260856004100281 1993 eng d00aA New Method for the Accurate Measurements of the Lumped Series Resistance of Solar Cells0 aNew Method for the Accurate Measurements of the Lumped Series Re aLouisville, KY1 aAberle, Armin, G1 aWenham, S R1 aGreen, Martin, A uhttps://www.pveducation.org/node/27200557nas a2200157 4500008004100000022001400041245009200055210006900147300001400216490000700230100001500237700001800252700001400270700001400284856010100298 1992 eng d a0927-024800aA simple and effective light trapping technique for polycrystalline silicon solar cells0 asimple and effective light trapping technique for polycrystallin a345 - 3560 v261 aWilleke, G1 aNussbaumer, H1 aBender, H1 aBucher, E uhttp://www.sciencedirect.com/science/article/B6V51-47XG9S8-45/2/acfac830ed036bd52484e2951d6f9c5100347nas a2200121 4500008004100000245004400041210004400085300001200129490000600141100002000147700001700167856004100184 1991 eng d00aBuried contact concentrator solar cells0 aBuried contact concentrator solar cells a273-2770 v11 aWohlgemuth, J H1 aNarayanan, S uhttps://www.pveducation.org/node/40800523nas a2200157 4500008004100000245010200041210006900143260001900212300001200231100001600243700001600259700001700275700001500292700001700307856004100324 1991 eng d00aDecline of the Carrisa Plains PV Power Plant: The Impact of Concentrating Sunlight on Flat Plates0 aDecline of the Carrisa Plains PV Power Plant The Impact of Conce aLas Vegas, USA a586-5921 aWenger, H J1 aSchaefer, J1 aRosenthal, A1 aHammond, B1 aSchlueter, L uhttps://www.pveducation.org/node/40400415nas a2200145 4500008004100000245005100041210005100092300001200143100001200155700001300167700001100180700002100191700001600212856004100228 1991 eng d00aImprovements in Silicon Solar Cell Performance0 aImprovements in Silicon Solar Cell Performance a399-4021 aZhao, J1 aA., Wang1 aDai, X1 aGreen, Martin, A1 aWenham, S R uhttps://www.pveducation.org/node/41500499nas a2200181 4500008004100000245005400041210005300095300001200148490000600160100001700166700001400183700001100197700001600208700001600224700001500240700002100255856004100276 1990 eng d00a18% efficient polycrystalline silicon solar cells0 a18 efficient polycrystalline silicon solar cells a678-6800 v11 aNarayanan, S1 aZolper, J1 aYun, F1 aWenham, S R1 aSproul, A B1 aChong, C M1 aGreen, Martin, A uhttps://www.pveducation.org/node/35500431nas a2200145 4500008004100000022001300041245006000054210005800114300001600172490000700188100001400195700001600209700001900225856004100244 1990 eng d a0018938300aMinority-carrier transport parameters in n-type silicon0 aMinoritycarrier transport parameters in ntype silicon a1314 - 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The anisotropy in the expansion coefficients is related to the bonding in the structure.1 aWhittingham, Stanley, M1 aThompson, Arthur, H uhttp://link.aip.org/link/?JCP/62/1588/1&Agg=doi00457nas a2200145 4500008004100000245006500041210005900106300001400165490000700179100001900186700001300205700001800218700001500236856006000251 1974 eng d00aCuInSe2/CdS heterojunction photovoltaic detectors0 aCuInSesub2subCdS heterojunction photovoltaic detectors a434–4350 v251 aWagner, Sigurd1 aShay, JL1 aMigliorato, P1 aKasper, HM uhttps://www.pveducation.org/reference/wagner1974cuinse200457nas a2200145 4500008004100000245007000041210006900111300001200180100001400192700001400206700001400220700002000234700001600254856004100270 1973 eng d00aOptimum Design of Anti-reflection coating for silicon solar cells0 aOptimum Design of Antireflection coating for silicon solar cells a168-1711 aWang, E Y1 aYu, F T S1 aSims, V L1 aBrandhorst, E W1 aBroder, J D uhttps://www.pveducation.org/node/40300366nam a2200121 4500008004100000245002500041210002500066250000800091260004900099490000600148100002400154856006600178 1963 eng d00aCrystal Structures 10 aCrystal Structures 1 a2nd a New York, New YorkbInterscience Publishers0 v11 aWyckoff, Ralph, W G uhttp://rruff.geo.arizona.edu/AMS/AMC_text_files/13434_amc.txt00344nas a2200109 4500008004100000245005700041210005700098490000600155100001200161700002000173856004100193 1963 eng d00aSeries Resistance Effects on Solar Cell Measurements0 aSeries Resistance Effects on Solar Cell Measurements0 v31 aWolf, M1 aRauschenbach, H uhttps://www.pveducation.org/node/410