00803nas a2200241 4500008004100000245010500041210007100146300001400217490000700231100001900238700002200257700002100279700002100300700002500321700001700346700001900363700002400382700002200406700002500428700002300453700002400476856006100500 2017 eng d00aProgress in thin film CIGS photovoltaics–Research and development, manufacturing, and applications0 aProgress in thin film CIGS photovoltaics–Research and developmen a645–6670 v251 aFeurer, Thomas1 aReinhard, Patrick1 aAvancini, Enrico1 aBissig, Benjamin1 aLöckinger, Johannes1 aFuchs, Peter1 aCarron, Romain1 aWeiss, Thomas, Paul1 aPerrenoud, Julian1 aStutterheim, Stephan1 aBuecheler, Stephan1 aTiwari, Ayodhya, N. uhttps://www.pveducation.org/reference/feurer2017progress00591nas a2200169 4500008004100000245010900041210006900150300001400219490000700233100002000240700001800260700002400278700001800302700001900320700002100339856006100360 2016 eng d00aEffects of heavy alkali elements in Cu (In, Ga) Se2 solar cells with efficiencies up to 22.6%0 aEffects of heavy alkali elements in Cu In Ga Sesub2sub solar cel a583–5860 v101 aJackson, Philip1 aWuerz, Roland1 aHariskos, Dimitrios1 aLotter, Erwin1 aWitte, Wolfram1 aPowalla, Michael uhttps://www.pveducation.org/reference/jackson2016effects00566nas a2200181 4500008004100000245006200041210005300103300001200156490000800168100002100176700002000197700001900217700002400236700001900260700002300279700002400302856005800326 2013 eng d00aHigh-efficiency Cu(In,Ga)Se2 cells and modules0 aHighefficiency CuInGaSesub2sub cells and modules a51–580 v1191 aPowalla, Michael1 aJackson, Philip1 aWitte, Wolfram1 aHariskos, Dimitrios1 aPaetel, Stefan1 aTschamber, Carsten1 aWischmann, Wiltraud uhttps://www.pveducation.org/reference/powalla2013high00571nas a2200157 4500008004100000245010800041210006900149300001600218490000600234100002200240700002200262700003300284700002000317700001800337856005800355 2013 eng d00aThe Influence of Absorber Thickness on Cu(In,Ga)Se2 Solar Cells With Different Buffer Layers0 aInfluence of Absorber Thickness on CuInGaSesub2sub Solar Cells W a1376–13820 v31 aPettersson, Jonas1 aTörndahl, Tobias1 aPlatzer-Björkman, Charlotte1 aHultqvist, Adam1 aEdoff, Marika uhttps://ieeexplore.ieee.org/abstract/document/657966000638nas a2200181 4500008004100000022001400041245010500055210006900160260001600229300001400245490000800259100002200267700001800289700002000307700002000327700001400347856009500361 2011 eng d a0002-786300aColloidal Iron Pyrite (FeS 2 ) Nanocrystal Inks for Thin-Film Photovoltaics0 aColloidal Iron Pyrite FeS sub2sub Nanocrystal Inks for ThinFilm cFeb-02-2011 a716 - 7190 v1331 aPuthussery, James1 aSeefeld, Sean1 aBerry, Nicholas1 aGibbs, Markelle1 aLaw, Matt uhttp://pubs.acs.org/doi/abs/10.1021/ja1096368http://pubs.acs.org/doi/pdf/10.1021/ja109636800552nas a2200169 4500008004100000022001300041245009000054210006900144260001600213300001100229490000700240100001800247700001700265700002300282700001400305856006300319 2011 eng d a0003695100aEffects of electrical contacts on the photoconductive gain of nanowire photodetectors0 aEffects of electrical contacts on the photoconductive gain of na cJan-01-2011 a1431100 v991 aPark, Hongsik1 aKim, Jin, Ho1 aBeresford, Roderic1 aXu, Jimmy uhttp://link.aip.org/link/APPLAB/v99/i14/p143110/s1&Agg=doi00610nas a2200193 4500008004100000022001400041245009000055210007100145260001600216300000900232490000700241100002400248700002000272700002000292700002800312700001700340700002000357856003900377 2010 eng d a1463-926200aGreen synthesis of tunable Cu(In1−xGax)Se2 nanoparticles using non-organic solvents0 aGreen synthesis of tunable CuIn1−xGaxSe2 nanoparticles using non cJan-01-2010 a12480 v121 aJuhaiman, Layla, Al1 aScoles, Ludmila1 aKingston, David1 aPatarachao, Bussaraporn1 aWang, Dashan1 aBensebaa, Farid uhttp://xlink.rsc.org/?DOI=c001813a00513nas a2200145 4500008004100000245006200041210006200103300001200165490000600177100001600183700002300199700002200222700002300244856010000267 2010 eng d00aOptical properties of copper indium diselenide thin films0 aOptical properties of copper indium diselenide thin films a49–580 v71 aPrabahar, S1 aBalasubramanian, V1 aSuryanarayanan, N1 aMuthukumarasamy, N uhttps://www.pveducation.org/reference/optical-properties-of-copper-indium-diselenide-thin-films00466nas a2200133 4500008004100000022001300041245008400054210006900138260001600207300001600223490000700239100002000246856006600266 2010 eng d a0927024800aTowards solar grade silicon: Challenges and benefits for low cost photovoltaics0 aTowards solar grade silicon Challenges and benefits for low cost cJan-09-2010 a1528 - 15330 v941 aPizzini, Sergio uhttp://linkinghub.elsevier.com/retrieve/pii/S092702481000031000574nas a2200193 4500008004100000245008300041210006900124100001500193700001300208700001500221700001400236700001500250700001300265700001500278700001400293700001800307700001400325856004100339 2009 eng d00aMETAMORPHIC GaInP/GaInAs/Ge TRIPLE-JUNCTION SOLAR CELLS WITH > 41 % EFFICIENCY0 aMETAMORPHIC GaInPGaInAsGe TRIPLEJUNCTION SOLAR CELLS WITH 41 EFF1 aDimroth, F1 aGuter, W1 aSchöne, J1 aWelser, E1 aSteiner, M1 aOliva, E1 aWekkeli, A1 aSiefer, G1 aPhilipps, S P1 aBett, A W uhttps://www.pveducation.org/node/30100523nas a2200157 4500008004100000020002200041245005700063210005600120260003200176100001500208700001900223700001700242700001500259700001700274856007400291 2009 eng d a978-1-4244-2949-300aStudy of SnS:Bi thin films prepared by sulfurization0 aStudy of SnSBi thin films prepared by sulfurization aPhiladelphia, PA, USAbIEEE1 aBotero, M.1 aPerez, Bartolo1 aCalderon, C.1 aRomero, E.1 aGordillo, G. uhttp://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=541115400615nas a2200169 4500008004100000245007400041210006900115300001800184490000800202100002100210700002500231700001900256700002200275700001500297700002100312856011200333 2009 eng d00aSynthesis of Cu2ZnSnS4 nanocrystals for use in low-cost photovoltaics0 aSynthesis of Cu2ZnSnS4 nanocrystals for use in lowcost photovolt a12554–125550 v1311 aSteinhagen, Chet1 aPanthani, Matthew, G1 aAkhavan, Vahid1 aGoodfellow, Brian1 aKoo, Bonil1 aKorgel, Brian, A uhttps://www.pveducation.org/reference/synthesis-of-cu2znsns4-nanocrystals-for-use-in-low-cost-photovoltaics00616nas a2200193 4500008004100000022001300041245010700054210006900161260001600230300000900246490000700255100002000262700001900282700001600301700001800317700001900335700001700354856005100371 2007 eng d a1099006200aEffects of Copper Oxide/Gold Electrode as the Source-Drain Electrodes in Organic Thin-Film Transistors0 aEffects of Copper OxideGold Electrode as the SourceDrain Electro cJan-01-2007 aH3400 v101 aPark, Jeong-Woo1 aBaeg, Kang-Jun1 aGhim, Jieun1 aKang, Seok-Ju1 aPark, Jeong-Ho1 aKim, Dong-Yu uhttp://esl.ecsdl.org/cgi/doi/10.1149/1.277468300504nas a2200157 4500008004100000022001300041245009900054210006900153260001200222300001600234490000700250100001300257700001300270700002200283856004100305 2007 eng d a0927024800aA review and comparison of different methods to determine the series resistance of solar cells0 areview and comparison of different methods to determine the seri c11/2007 a1698 - 17060 v911 aPYSCH, D1 aMette, A1 aGlunz, Stefan, W. uhttps://www.pveducation.org/node/36800707nas a2200229 4500008004100000022001300041245008400054210006900138260001600207300001400223490001200237100001800249700002200267700001600289700002100305700001600326700001600342700002000358700001700378700001600395856006600411 2005 eng d a0927775700aNanocrystalline CuO films prepared by pyrolysis of Cu-arachidate LB multilayers0 aNanocrystalline CuO films prepared by pyrolysis of Cuarachidate cJan-05-2005 a277 - 2820 v257-2581 aParhizkar, M.1 aSingh, Sukhvinder1 aNayak, P.K.1 aKumar, Nigvendra1 aMuthe, K.P.1 aGupta, S.K.1 aSrinivasa, R.S.1 aTalwar, S.S.1 aMajor, S.S. uhttp://linkinghub.elsevier.com/retrieve/pii/S092777570400732000643nas a2200205 4500008004100000022001300041245009600054210006900150260001600219300001200235490000800247100001900255700001600274700001600290700001600306700001500322700001600337700001800353856006600371 1998 eng d a0040609000aProcess and characterisation of chemical bath deposited manganese sulphide (MnS) thin films0 aProcess and characterisation of chemical bath deposited manganes cJan-09-1998 a70 - 750 v3301 aLokhande, C.D.1 aEnnaoui, A.1 aPatil, P.S.1 aGiersig, M.1 aMuller, M.1 aDiesner, K.1 aTributsch, H. uhttp://linkinghub.elsevier.com/retrieve/pii/S004060909800500800454nas a2200145 4500008004100000245007400041210006900115300001200184490000700196100001400203700001400217700001900231700001700250856004100267 1995 eng d00aOn some thermodynamic aspects of photovoltaic solar energy conversion0 asome thermodynamic aspects of photovoltaic solar energy conversi a201-2220 v361 aBaruch, P1 aDe Vos, A1 aLandsberg, P T1 aParrott, J E uhttps://www.pveducation.org/node/27900455nas a2200133 4500008004100000022001400041245005700055210005700112260001200169300001400181490000700195100001700202856010200219 1993 eng d a0038-092X00aChoice of an equivalent black body solar temperature0 aChoice of an equivalent black body solar temperature c09/1993 a195 - 1950 v511 aParrott, J E uhttp://www.sciencedirect.com/science/article/B6V50-497TD5S-1HX/2/5b4be52ce15a1f2f2b664fe8bbb37cb601606nas a2200241 4500008004100000022002500041245014700066210006900213300001400282490000800296520080900304653001401113653002201127653002101149653002301170653001501193100001701208700002001225700003001245700002301275700002301298856004301321 1993 eng d a0013-4651, 1945-711100aStructure and Composition of Chemically Deposited Thin Films of Bismuth Sulfide and Copper Sulfide Effect on Optical and Electrical Properties0 aStructure and Composition of Chemically Deposited Thin Films of a754–7590 v1403 aChemically deposited thin films of bismuth sulfide (0.13 μm) and copper sulfide (0.3 μm) and copper sulfide films deposited on bismuth sulfide have been studied so as to obtain information about their structure, composition, thermal stability, and their effect on the optical and electrical properties. The studies establish that bismuth sulfide thin films become crystalline upon air annealing near {200°C} and remain stable up to {300°C.} But oxygen chemisorption reduces the photo‐ and dark conductivities of the films annealed at {300°C.} The studies establish that the copper sulfide films are (covellite), which is stable up to {220°C.} However, films deposited on bismuth sulfide substrate films retain useful electrical and optical properties for annealing temperatures up to {∼300°C.}10aannealing10abismuth compounds10acopper compounds10aoptical properties10aThin films1 aNair, P., K.1 aNair, M., T. S.1 aPathirana, Hema, M. K. K.1 aZingaro, Ralph, A.1 aMeyers, Edward, A. uhttp://jes.ecsdl.org/content/140/3/75401652nas a2200181 4500008004100000022001600041245009500057210006900152300001400221490000700235520102700242100001901269700002101288700001801309700002201327700002001349856010101369 1990 eng d a{0038-092X}00aModeling daylight availability and irradiance components from direct and global irradiance0 aModeling daylight availability and irradiance components from di a271–2890 v443 a
This paper presents the latest versions of several models developed by the authors to predict short time-step solar energy and daylight availability quantities needed by energy system modelers or building designers. The modeled quantities are global, direct and diffuse daylight illuminance, diffuse irradiance and illuminance impinging on tilted surfaces of arbitrary orientation, sky zenith luminance and sky luminance angular distribution. All models are original except for the last one which is extrapolated from current standards. All models share a common operating structure and a common set of input data: Hourly (or higher frequency) direct (or diffuse) and global irradiance plus surface dew point temperature. Key experimental observations leading to model development are briefly reviewed. Comprehensive validation results are presented. Model accuracy, assessed in terms of root-mean-square and mean bias errors, is analyzed both as a function of insolation conditions and site climatic environment.
1 aPerez, Richard1 aIneichen, Pierre1 aSeals, Robert1 aMichalsky, Joseph1 aStewart, Ronald uhttp://www.sciencedirect.com/science/article/B6V50-497T9KG-S0/2/034fdf1417cea3a44d8509fe805f679e00611nas a2200169 4500008004100000022001400041245009500055210006900150300001400219490000700233100001900240700002100259700001800280700002200298700002000320856010100340 1990 eng d a0038-092X00aModeling daylight availability and irradiance components from direct and global irradiance0 aModeling daylight availability and irradiance components from di a271 - 2890 v441 aPerez, Richard1 aIneichen, Pierre1 aSeals, Robert1 aMichalsky, Joseph1 aStewart, Ronald uhttp://www.sciencedirect.com/science/article/B6V50-497T9KG-S0/2/034fdf1417cea3a44d8509fe805f679e01203nas a2200157 4500008004100000022001300041245008400054210006900138260001600207300000900223490000800232520071800240100001600958700002000974856005100994 1984 eng d a0013465100aOn the Effect of Impurities on the Photovoltaic Behavior of Solar-Grade Silicon0 aEffect of Impurities on the Photovoltaic Behavior of SolarGrade cJan-01-1984 a21280 v1313 aThe electrical and photovoltaic properties of partially compensated p‐type silicon samples have been investigated in order to understand the influence of the contemporaneous presence of donors and acceptors on the behavior of majority and minority carriers. It has been shown that the majority carrier properties are only slightly influenced by the presence of donors in p‐type samples and that the minority carrier properties depend on the excess acceptor concentration up to an excess donor concentration close to Formula . A theoretical explanation of these features has been proposed, on the base of the Shockley‐Read‐Hall model of recombination at shallow traps and donor‐acceptor pairs formation. 1 aPizzini, S.1 aCalligarich, C. uhttp://jes.ecsdl.org/cgi/doi/10.1149/1.211603300535nas a2200145 4500008004100000022001400041245013100055210006900186260001600255300001400271490000600285100002500291700002100316856005200337 1968 eng d a0020-166900aElectrical properties of the Group IV disulfides, titanium disulfide, zirconium disulfide, hafnium disulfide and tin disulfide0 aElectrical properties of the Group IV disulfides titanium disulf cJan-03-1968 a459 - 4630 v71 aConroy, Lawrence, E.1 aPark, Kyu, Chang uhttp://pubs.acs.org/doi/abs/10.1021/ic50061a01501055nas a2200133 4500008004100000245008800041210006900129300001200198490000600210520062200216100001700838700001600855856005000871 1964 eng d00aNondestructive determination of thickness and refractive index of transparent films0 aNondestructive determination of thickness and refractive index o a43–510 v83 aA simple nondestructive method of measuring the refractive index and thickness of transparent films on reflective substrates has been developed. The technique involves the use of a microscope equipped with a monochromatic filter on the objective and a stage that can be rotated so that the reflected light is observed at various angles. The film thickness, d, is given by d = {[ΔNλ]/[2µ(cos} r2, - cos r1)], where λ is the wavelength of the filtered light, µ is the refractive index, and {ΔN} is the number of fringes observed between the angles of refraction r2, and r1.
1 aPliskin, W A1 aConrad, E E uhttp://portal.acm.org/citation.cfm?id=166239101630nas a2200145 4500008004100000022001300041245004500054210004500099260001600144300000800160490000700168520123800175100002001413856005101433 1957 eng d a0002950500aConversion of Solar to Electrical Energy0 aConversion of Solar to Electrical Energy cJan-01-1957 a5910 v253 aA photovoltaic device has been developed which converts solar radiation directly into electrical energy with an over-all efficiency of 11%. This consists of a p-n junction formed by gaseous diffusion near the front surface of a silicon plate. In full sunlight a single cell furnishes approximately 30 ma of short circuit current per square centimeter of surface, 0.6 v of open circuit voltage, and 12 mw of power into a matched load per square centimeter of surface. Like other electric batteries, individual cells may be connected in series or parallel to obtain an increase in terminal voltage or current. The spectral response is a maximum near 0.7 µ, and the long wavelength cutoff is at approximately 1.1 µ. The efficiency of this new siliconp-n junctionphotovoltaic cell is greater by a factor of 20 than that previously reported for other types of photocells and makes the conversion of the sun's energy directly into electricity possible for a number of interesting applications. A Bell System field trial at Americus, Georgia, in which solar batteries are used to power a rural carrier telephone communication system, is described. A number of other possible applications for this new solar energy converter are discussed.1 aPearson, G., L. uhttp://link.aip.org/link/?AJP/25/591/1&Agg=doi00447nas a2200133 4500008004100000245009400041210006900135300001200204490000700216100001600223700001600239700001700255856004100272 1954 eng d00aA New Silicon P-N Junction Photocell for Converting Solar Radiation into Electrical Power0 aNew Silicon PN Junction Photocell for Converting Solar Radiation a676-6770 v251 aChapin, D M1 aFuller, C S1 aPearson, G L uhttps://www.pveducation.org/node/29300238nas a2200097 4500008004100000245001800041210001700059490000800076100001500084856004100099 1952 eng d00aZone-refining0 aZonerefining0 v1941 aPfann, W G uhttps://www.pveducation.org/node/36400334nas a2200121 4500008004100000245004300041210004300084260001200127300001200139490000600151100001400157856004100171 1901 eng d00aDistribution of energy in the spectrum0 aDistribution of energy in the spectrum c03/1901 a553-5630 v41 aPlanck, M uhttps://www.pveducation.org/node/36600324nas a2200109 4500008004100000245005000041210005000091300001200141490000600153100001400159856004100173 1900 eng d00aDistribution of energy in the normal spectrum0 aDistribution of energy in the normal spectrum a237-2450 v21 aPlanck, M uhttps://www.pveducation.org/node/365