00803nas a2200241 4500008004100000245010500041210007100146300001400217490000700231100001900238700002200257700002100279700002100300700002500321700001700346700001900363700002400382700002200406700002500428700002300453700002400476856006100500 2017 eng d00aProgress in thin film CIGS photovoltaics–Research and development, manufacturing, and applications0 aProgress in thin film CIGS photovoltaics–Research and developmen a645–6670 v251 aFeurer, Thomas1 aReinhard, Patrick1 aAvancini, Enrico1 aBissig, Benjamin1 aLöckinger, Johannes1 aFuchs, Peter1 aCarron, Romain1 aWeiss, Thomas, Paul1 aPerrenoud, Julian1 aStutterheim, Stephan1 aBuecheler, Stephan1 aTiwari, Ayodhya, N. uhttps://www.pveducation.org/reference/feurer2017progress00448nas a2200133 4500008004100000020002200041245003000063210003000093250001900123260001900142300000800161100002300169856012200192 2010 eng d a978-0-12-374774-700aSolar Cell Device Physics0 aSolar Cell Device Physics aSecond Edition bAcademic Press a4001 aFonash, Stephen, J uhttp://www.amazon.com/Solar-Cell-Device-Physics-Second/dp/0123747740/ref=sr_1_1?s=books&ie=UTF8&qid=1279652144&sr=1-100773nas a2200241 4500008004100000245012600041210006900167260000800236300001100244490000700255653002100262653002400283653002900307653002200336653001200358653001600370100002000386700001800406700002200424700001800446700002100464856004600485 2005 eng d00aPhotographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence0 aPhotographic surveying of minority carrier diffusion length in p bAIP a2621080 v8610acarrier lifetime10aelectroluminescence10aelemental semiconductors10aMINORITY CARRIERS10aSILICON10asolar cells1 aFuyuki, Takashi1 aKondo, Hayato1 aYamazaki, Tsutomu1 aTakahashi, Yu1 aUraoka, Yukiharu uhttp://link.aip.org/link/?APL/86/262108/100659nas a2200205 4500008004100000245011400041210006900155260000800224300001400232490000700246653002900253653001200282653001600294653002000310100001800330700001600348700002100364700002400385856004400409 1998 eng d00a19.8% efficient "honeycomb" textured multicrystalline and 24.4% monocrystalline silicon solar cells0 a198 efficient quothoneycombquot textured multicrystalline and 24 bAIP a1991-19930 v7310aelemental semiconductors10aSILICON10asolar cells10asurface texture1 aZhao, Jianhua1 aWang, Aihua1 aGreen, Martin, A1 aFerrazza, Francesca uhttp://link.aip.org/link/?APL/73/1991/100498nas a2200133 4500008004100000245006500041210006500106100003000171700001400201700001500215700001600230700001500246856010300261 1997 eng d00aHeterojunctions based on Cu2ZnSnS4 and Cu2ZnSnSe4 thin films0 aHeterojunctions based on Cu2ZnSnS4 and Cu2ZnSnSe4 thin films1 aFriedlmeier, Th, Magorian1 aWieser, N1 aWalter, Th1 aDittrich, H1 aSchock, HW uhttps://www.pveducation.org/reference/heterojunctions-based-on-cu2znsns4-and-cu2znsnse4-thin-films00458nas a2200133 4500008004100000245009000041210006900131260002200200300001600222100001300238700001500251700001700266856004100283 1997 eng d00aSurface texturing using reactive ion etching for multicrystalline silicon solar cells0 aSurface texturing using reactive ion etching for multicrystallin aNew York, NY, USA a1451, 47-501 aFukui, K1 aInomata, Y1 aShirasawa, K uhttps://www.pveducation.org/node/31100578nas a2200157 4500008004100000022001400041245011000055210006900165260001600234300001800250490000600268100001900274700001700293700001500310856009500325 1994 eng d a0953-898400aTemperature dependence of the optical absorption edge of pyrite FeS 2 thin films0 aTemperature dependence of the optical absorption edge of pyrite cFeb-11-1995 a10177 - 101830 v61 aHeras, de, las1 aFerrer, I, J1 aSanchez, C uhttp://stacks.iop.org/0953-8984/6/i=46/a=033?key=crossref.61b976ff921e0c9e9564b77a55dabd3500281nam a2200085 4500008004100000245004900041210004700090100001700137856004100154 1985 eng d00aQED : The Strange Theory of Light and Matter0 aQED The Strange Theory of Light and Matter1 aFeynman, R P uhttps://www.pveducation.org/node/30700351nas a2200133 4500008004100000245003900041210003600080300001400116490000700130100001200137700001300149700001400162856004100176 1983 eng d00aOn Phosphorus Diffusion in Silicon0 aPhosphorus Diffusion in Silicon a6912-69220 v541 aHu, S M1 aFahey, P1 aSutton, P uhttps://www.pveducation.org/node/33300496nas a2200133 4500008004100000245010000041210006900141260006100210100001800271700001100289700000800300700001300308856004100321 1981 eng d00aThe Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon0 aRelationship Between Resistivity and Dopant Density for Phosphor bU.S. Department of Commerce National Bureau of Standards1 aThurber, W, R1 aMattis1 aLiu1 aFilliben uhttps://www.pveducation.org/node/39600652nas a2200229 4500008004100000245006800041210006600109260000800175300001400183490000800197653001000205653002700215653001600242653001700258653002500275653001200300100001800312700001600330700001300346700001800359856004500377 1980 eng d00aResistivity-Dopant Density Relationship for Boron-Doped Silicon0 aResistivityDopant Density Relationship for BoronDoped Silicon bECS a2291-22940 v12710aboron10aelectrical resistivity10aHall effect10ahole density10asemiconductor doping10aSILICON1 aThurber, W, R1 aMattis, R L1 aLiu, Y M1 aFilliben, J J uhttp://link.aip.org/link/?JES/127/2291/100765nas a2200265 4500008004100000245007300041210006900114260000800183300001400191490000800205653001200213653002700225653002200252653001600274653003200290653001500322653001500337653002500352653001200377100001800389700001600407700001300423700001800436856004500454 1980 eng d00aResistivity-Dopant Density Relationship for Phosphorus-Doped Silicon0 aResistivityDopant Density Relationship for PhosphorusDoped Silic bECS a1807-18120 v12710adensity10aelectrical resistivity10aelectron mobility10aHall effect10aneutron activation analysis10aphosphorus10aphotometry10asemiconductor doping10aSILICON1 aThurber, W, R1 aMattis, R L1 aLiu, Y M1 aFilliben, J J uhttp://link.aip.org/link/?JES/127/1807/101920nas a2200157 4500008004100000022001400041245007000055210006900125300001400194490000700208520145500215100001801670700001601688700001701704856004101721 1979 eng d a0018-938300aApplication of the superposition principle to solar-cell analysis0 aApplication of the superposition principle to solarcell analysis a165–1710 v263 aThe principle of superposition is used to derive from fundamentals the widely used shifting approximation that the current-voltage characteristic of an illuminated solar cell is the dark current-voltage characteristic shifted by the short-circuit photocurrent. Thus the derivation requires the linearity of the boundary-value problems that underlie the electrical characteristics. This focus on linearity defines the conditions that must hold if the shifting approximation is to apply with good accuracy. In this regard, if considerable photocurrent and considerable dark thermal recombination current both occur within the junction space-charge region, then the shifting approximation is invalid. From a rigorous standpoint, it is invalid also if low-injection concentrations of holes and electrons are not maintained throughout the quasi-neutral regions. The presence of sizable series resistance also invalidates the shifting approximation. Methods of analysis are presented to treat these cases for which shifting is not strictly valid. These methods are based on an understanding of the physics of cell operation. This understanding is supported by laboratory experiments and by exact computer solution of the relevant boundary-value problems. For the case of high injection in the base region, the method of analysis employed accurately yields the dependence of the open-circuit voltage on the short-circuit current (or the illumination level).1 aLindholm, F A1 aFossum, J G1 aBurgess, E L uhttps://www.pveducation.org/node/34401672nas a2200181 4500008004100000245007700041210006900118300000900187490000700196520113400203100002101337700001701358700001901375700001601394700001501410700001501425856005001440 1979 eng d00aHall coefficient and reflectivity evidence that TiS 2 is a semiconductor0 aHall coefficient and reflectivity evidence that TiS 2 is a semic aL5210 v123 aA series of measurements of the Hall coefficient, infrared reflectivity, thermoelectric power and electrical resistivity of Ti 1+x S 2 single crystals with various degrees of stoichiometry is described, where, for the first time, each measurement was made on the same crystal (or crystals from the same batch). None of these measurements taken alone can distinguish between the semimetallic or semiconducting models of TiS 2 . However, by making all four measurements on each sample, it has been possible to establish correlations between the results for different samples. It was found that the product of the Hall coefficient and the square of the plasma frequency is the same for all samples, a result that is consistent with a semiconductor model, but is inconsistent with a semimetal. Nevertheless the most stoichiometric samples remain metallic with electron concentrations of 2*10 20 cm -3 . It was also found that the resistivity data cannot be explained by carrier-carrier or optical phonon scattering. Therefore, both the source of the residual conduction electrons and the scattering mechanism in TiS 2 remain unknown.1 aLogothetis, E, M1 aKaiser, W, J1 aKukkonen, C, A1 aFaile, S, P1 aColella, R1 aGambold, J uhttp://stacks.iop.org/0022-3719/12/i=13/a=00700658nas a2200193 4500008004100000022001400041245010200055210006900157260001600226300001600242490000700258100002100265700001700286700001900303700001600322700001500338700001500353856009600368 1979 eng d a0022-371900aHall coefficient and reflectivity evidence that TiS 2 is a semiconductor0 aHall coefficient and reflectivity evidence that TiS sub2sub is a cFeb-07-1980 aL521 - L5260 v121 aLogothetis, E, M1 aKaiser, W, J1 aKukkonen, C, A1 aFaile, S, P1 aColella, R1 aGambold, J uhttp://stacks.iop.org/0022-3719/12/i=13/a=007?key=crossref.7b34e84721f0d96f60dce7c3e44ba4c700760nas a2200145 4500008004100000022001400041245006500055210006300120260001200183300001400195490000700209520034100216100001600557856004100573 1977 eng d a0018-938300aPhysical operation of back-surface-field silicon solar cells0 aPhysical operation of backsurfacefield silicon solar cells c04/1977 a322 - 3250 v243 a
Using exact numerical solutions of carrier transport in the back-surface-field silicon solar cell both for guidance and for verification, the physical mechanisms effective in this device are identified and explained. Concise analytical descriptions of the cell performance, based on the pertinent device physics, are formulated.
1 aFossum, J G uhttps://www.pveducation.org/node/30900483nas a2200157 4500008004100000022001400041245006300055210006100118260001600179300001400195490000800209100001600217700002000233700002000253856005200273 1968 eng d a0031-899X00aElectroreflectance Measurements on Mg2Si, Mg2Ge, and Mg2Sn0 aElectroreflectance Measurements on Mg2Si Mg2Ge and Mg2Sn cJan-12-1968 a905 - 9080 v1761 aVazquez, F.1 aForman, Richard1 aCardona, Manuel uhttp://link.aps.org/doi/10.1103/PhysRev.176.90500523nas a2200181 4500008004100000022001400041245004500055210003600100260001600136300001600152490000700168100002100175700001900196700002700215700001700242700001700259856006500276 1965 eng d a0904-213X00aOn the Properties of alpha-MnS and MnS2.0 aProperties of alphaMnS and MnS2 cJan-01-1965 a1405 - 14100 v191 aFuruseth, Sigrid1 aKjekshus, Arne1 aNiklasson, Rune, J. V.1 aBrunvoll, J.1 aHinton, Merv uhttp://actachemscand.org/doi/10.3891/acta.chem.scand.19-140500447nas a2200133 4500008004100000245009400041210006900135300001200204490000700216100001600223700001600239700001700255856004100272 1954 eng d00aA New Silicon P-N Junction Photocell for Converting Solar Radiation into Electrical Power0 aNew Silicon PN Junction Photocell for Converting Solar Radiation a676-6770 v251 aChapin, D M1 aFuller, C S1 aPearson, G L uhttps://www.pveducation.org/node/29300298nas a2200109 4500008004100000245004000041210003500081300000800116490000700124100001600131856004100147 1883 eng d00aOn a New Form of Selenium Photocell0 aNew Form of Selenium Photocell a4650 v261 aFritts, C E uhttps://www.pveducation.org/node/310