01407nas a2200169   4500008004100000022001400041245009100055210006900146300001400215490000800229520086200237653000801099100001901107700001901126700002101145856007101166       2000                        eng d  a0040-609000aPhotoelectrochemical properties of copper oxide thin films coated on an n-Si substrate0 aPhotoelectrochemical properties of copper oxide thin films coate  a250 - 2560 v3723 aThe photoelectrochemical properties of the copper oxide thin film coated on the n-type silicon electrode were investigated as a function of film deposition temperature. The variation in the deposition temperature affected the film morphology and the ratio of copper to oxygen. In case of the films deposited below 200°C, the main phase was found to be CuO while the amount of the Cu2O phase increased with further increases in deposition temperature. The n-silicon photoelectrode showed enhanced photocurrent–potential (I–V) properties by forming a copper oxide/n-silicon heterojunction. In particular, the electrode, which mainly consisted of a CuO phase, showed better photoelectrochemical conversion efficiencies compared to the Cu2O phase. This result was explained in terms of the electrical conductance and transmittance of the copper oxide film.10aXPS1 aYoon, Ki, Hyun1 aChoi, Woo, Jin1 aKang, Dong, Heon  uhttp://www.sciencedirect.com/science/article/pii/S0040609000010580