@article {usgs_silicon_2013, title = {Minerals Yearbook, Vol. I, Metals \& Minerals:}, year = {2013}, pages = {144}, publisher = {U.S. Government Printing Office}, url = {http://minerals.usgs.gov/minerals/pubs/commodity/silicon/mcs-2013-simet.pdf}, author = {Lisa A. Corathers} } @article {Emilio2012, title = {MEASURING THE SOLAR RADIUS FROM SPACE DURING THE 2003 AND 2006 MERCURY TRANSITS}, journal = {The Astrophysical Journal}, volume = {750}, year = {2012}, month = {Oct-05-2012}, pages = {135}, issn = {0004-637X}, doi = {10.1088/0004-637X/750/2/135}, url = {http://stacks.iop.org/0004-637X/750/i=2/a=135?key=crossref.05e0b42eda734799131016b454577c66http://stacks.iop.org/0004-637X/750/i=2/a=135/pdf}, author = {Emilio, M. and Kuhn, J. R. and Bush, R. I. and Scholl, I. F.} } @article {IAU2012, title = {Measuring the Universe}, volume = {2018}, year = {2012}, publisher = {International Astronomical Union}, type = {Website}, author = {International Astronomical Union} } @proceedings {Dimroth2009, title = {METAMORPHIC GaInP/GaInAs/Ge TRIPLE-JUNCTION SOLAR CELLS WITH > 41 \% EFFICIENCY}, year = {2009}, note = {
}, author = {F. Dimroth and W. Guter and J. Sch{\"o}ne and E. Welser and M. Steiner and E. Oliva and A. Wekkeli and G. Siefer and S.P. Philipps and A.W. Bett} } @article {Devika2006, title = {Microstructure dependent physical properties of evaporated tin sulfide films}, journal = {Journal of Applied Physics}, volume = {100}, year = {2006}, month = {Jan-01-2006}, pages = {023518}, abstract = {In the field of photovoltaics, semiconductors of the III-V group such as GaAs and InP have been considered as the most efficient absorber materials due to their direct energyband gap and high mobility. In these compounds, arsenic and phosphorus are highly toxic and expensive. In this work we present systematic preparation of low cost SnS thin films and characterize these films to test their suitability for photovoltaic applications. We have observed that the films (with thickness ≅0.5μm) grown at the substrate temperature of 275{\textdegree}C exhibit a low resistive single SnS phase and have a direct optical band gap of 1.35eV with an absorption coefficient of \~{}105cm-1. SnSfilms could be alternative semiconductor materials as absorbers for the fabrication of photovoltaic devices.}, issn = {00218979}, doi = {10.1063/1.2216790}, url = {http://scitation.aip.org/content/aip/journal/jap/100/2/10.1063/1.2216790}, author = {Devika, M. and Ramakrishna Reddy, K. T. and Koteeswara Reddy, N. and Ramesh, K. and Ganesan, R. and Gopal, E. S. R. and Gunasekhar, K. R.} } @book {Brady2002, title = {Materials handbook: [foundation for the science of metallurgy; compares the advantages and disadvantages of different manufacturing processes; comprehensive in approach].}, year = {2002}, publisher = {{McGraw-Hill}}, organization = {{McGraw-Hill}}, address = {New York [u.a.]}, isbn = {{007136076X} 9780071360760}, url = {http://www.scribd.com/doc/6395226/Materials-Handboook}, author = {Brady, George S and Clauser, Henry R and Vaccari, John A} } @proceedings {vanderHeide2000, title = {Mapping of contact resistance and locating shunts on solar cells using Resistance Analysis by Mapping of Potential (RAMP) techniques}, year = {2000}, note = {
}, pages = {1438}, address = {Glasgow (United Kingdom)}, author = {A.S.H. van der Heide and et al} } @article {Wang1990, title = {Minority-carrier transport parameters in n-type silicon}, journal = {IEEE Transactions on Electron Devices}, volume = {37}, year = {1990}, note = {
}, pages = {1314 - 1322}, issn = {00189383}, doi = {10.1109/16.108194}, author = {Wang, C.H. and Misiakos, K. and Neugroschel, A.} } @article {Perez1990, title = {Modeling daylight availability and irradiance components from direct and global irradiance}, journal = {Solar Energy}, volume = {44}, number = {5}, year = {1990}, note = {
}, pages = {271 - 289}, issn = {0038-092X}, doi = {DOI: 10.1016/0038-092X(90)90055-H}, url = {http://www.sciencedirect.com/science/article/B6V50-497T9KG-S0/2/034fdf1417cea3a44d8509fe805f679e}, author = {Richard Perez and Pierre Ineichen and Robert Seals and Joseph Michalsky and Ronald Stewart} } @article {Perez1990, title = {Modeling daylight availability and irradiance components from direct and global irradiance}, journal = {Solar Energy}, volume = {44}, number = {5}, year = {1990}, note = {
}, pages = {271{\textendash}289}, abstract = {

This paper presents the latest versions of several models developed by the authors to predict short time-step solar energy and daylight availability quantities needed by energy system modelers or building designers. The modeled quantities are global, direct and diffuse daylight illuminance, diffuse irradiance and illuminance impinging on tilted surfaces of arbitrary orientation, sky zenith luminance and sky luminance angular distribution. All models are original except for the last one which is extrapolated from current standards. All models share a common operating structure and a common set of input data: Hourly (or higher frequency) direct (or diffuse) and global irradiance plus surface dew point temperature. Key experimental observations leading to model development are briefly reviewed. Comprehensive validation results are presented. Model accuracy, assessed in terms of root-mean-square and mean bias errors, is analyzed both as a function of insolation conditions and site climatic environment.

}, issn = {{0038-092X}}, doi = {10.1016/0038-092X(90)90055-H}, url = {http://www.sciencedirect.com/science/article/B6V50-497T9KG-S0/2/034fdf1417cea3a44d8509fe805f679e}, author = {Richard Perez and Pierre Ineichen and Robert Seals and Joseph Michalsky and Ronald Stewart} } @article {Masetti1983, title = {Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon}, journal = {IEEE Transactions on Electron Devices}, volume = {ED-30}, number = {7}, year = {1983}, note = {

Copyright 1983, {IEE}

}, pages = {764{\textendash}9}, abstract = {

New carrier mobility data for both arsenic- and boron-doped silicon are presented in the high doping range. The data definitely show that the electron mobility in As-doped silicon is significantly lower than in P-doped silicon for carrier concentrations higher than 1019 cm-3. By integrating these data with those previously published, empirical relationships able to model the carrier mobility against carrier concentration in the whole experimental range examined to date (about eight decades in concentration) for As-, P-, and B-doped silicon are derived. Different parameters in the expression for the n-type dopants provide differentiation between the electron mobility in As- and P-doped silicon. Finally, it is shown that these new expressions, once implemented in the {SUPREM} {II} process simulator, lead to reduced errors in the simulation of the sheet resistance values

}, keywords = {arsenic, boron, CARRIER DENSITY, carrier mobility, digital simulation, elemental semiconductors, heavily doped semiconductors, phosphorus, SILICON}, issn = {0018-9383}, author = {G. Masetti and M. Severi and S. Solmi} } @article {Green1974, title = {Minority carrier MIS tunnel diodes and their application to electron- and photo-voltaic energy conversion{\textemdash}I. Theory}, journal = {Solid-State Electronics}, volume = {17}, year = {1974}, month = {Jan-06-1974}, pages = {551 - 561}, abstract = {If the insulating layer in a metal-insulator-semiconductor (MIS) diode is very thin (\<60 {\r A} for AlSiO2Si), measureable tunnel current can flow between the metal and the semiconductor. If the insulating layer is even thinner (\<30 {\r A}), tunnel currents are so large that they can significantly disturb the semiconductor from thermal equilibrium. Under such conditions, MIS diodes exhibit properties determined by which of the following tunneling processes is dominant; tunneling between the metal and the majority carrier energy band in the semiconductor, between the metal and the minority carrier energy band, or between the metal abd surface state levels. In the present paper, minority carrier MIS tunnel diodes are analysed using a very general formulation of the tunneling processes through the insulator, transport properties in the semiconductor, and surface state effects. Starting from solutions for diodes with relatively thick insulating layers where the semiconductor is essentially in thermal equilibrium, solutions are obtained for progressively thinner insulating layers until non-equilibrium effects in the semiconductor are observed. It is shown that such minority carrier MIS tunnel diodes with very thin insulating layers possess properties similar to p-n junction diodes including exponential current-voltage characteristics which approach the {\textquotedblleft}ideal diode{\textquotedblright} law of p-n junction theory. The theory adequately describes the observed properties of experimental devices reported in a companion paper. The diodes have application as injecting contacts, as photodiodes or elements of photodiode arrays, and as energy conversion devices employing the electron- or photo-voltaic effects.}, issn = {00381101}, doi = {10.1016/0038-1101(74)90172-5}, url = {http://linkinghub.elsevier.com/retrieve/pii/0038110174901725http://api.elsevier.com/content/article/PII:0038110174901725?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:0038110174901725?httpAccept=text/plain}, author = {Green, M.A. and King, F.D. and Shewchun, J.} } @article {Laue1970, title = {The measurement of solar spectral irradiance at different terrestrial elevations}, journal = {Solar Energy}, volume = {13}, number = {1}, year = {1970}, note = {
}, pages = {43 - 50, IN1-IN4, 51-57}, issn = {0038-092X}, doi = {DOI: 10.1016/0038-092X(70)90006-X}, url = {http://www.sciencedirect.com/science/article/B6V50-497T7KC-T/2/c932c2f01c2de3c36c0f461c991f791a}, author = {E.G. Laue} } @article {Smits1958, title = {Measurement of sheet resistivities with the four-point probe}, journal = {Bell System Technical Journal}, volume = {34}, year = {1958}, note = {
}, month = {May 1958}, pages = {711-718}, author = {F.M. Smits} } @article {Becquerel1841, title = {Memoire sur les effects d{\textasciiacute}electriques produits sous l{\textasciiacute}influence des rayons solaires}, journal = {Annalen der Physick und Chemie}, volume = {54}, year = {1841}, note = {
}, pages = {35-42}, author = {Becquerel, A.E.} }