@article {powalla2013high, title = {High-efficiency Cu(In,Ga)Se2 cells and modules}, journal = {Solar energy materials and solar cells}, volume = {119}, year = {2013}, pages = {51{\textendash}58}, author = {Powalla, Michael and Jackson, Philip and Witte, Wolfram and Hariskos, Dimitrios and Paetel, Stefan and Tschamber, Carsten and Wischmann, Wiltraud} } @mastersthesis {Ghosh2011, title = {Heterojunction and Nanostructured Photovoltaic Device: Theory and Experiment}, year = {2011}, school = {Arizona State University}, type = {phdPh. D. Thesis}, abstract = {A primary motivation of research in photovoltaic technology is to obtain higher efficiency photovoltaic devices at reduced cost of production so that solar electricity can be cost competitive. The majority of photovoltaic technologies are based on p-n junction, with efficiency potential being much lower than the thermodynamic limits of individual technologies and thereby providing substantial scope for further improvements in efficiency. The thesis explores photovoltaic devices using new physical processes that rely on thin layers and are capable of attaining the thermodynamic limit of photovoltaic technology. Silicon heterostructure is one of the candidate technologies in which thin films induce a minority carrier collecting junction in silicon and the devices can achieve efficiency close to the thermodynamic limits of silicon technology. The thesis proposes and experimentally establishes a new theory explaining the operation of silicon heterostructure solar cells. The theory will assist in identifying the optimum properties of thin film materials for silicon heterostructure and help in design and characterization of the devices, along with aiding in developing new devices based on this technology. The efficiency potential of silicon heterostructure is constrained by the thermodynamic limit (31\%) of single junction solar cell and is considerably lower than the limit of photovoltaic conversion (\textasciitilde 80 \%). A further improvement in photovoltaic conversion efficiency is possible by implementing a multiple quasi-fermi level system (MQFL). A MQFL allows the absorption of sub band gap photons with current being extracted at a higher band-gap, thereby allowing to overcome the efficiency limit of single junction devices. A MQFL can be realized either by thin epitaxial layers of alternating higher and lower band gap material with nearly lattice matched (quantum well) or highly lattice mismatched (quantum dot) structure. The thesis identifies the material combination for quantum well structure and calculates the absorption coefficient of a MQFl based on quantum well. GaAsSb (barrier)/InAs(dot) was identified as a candidate material for MQFL using quantum dot. The thesis explains the growth mechanism of GaAsSb and the optimization of GaAsSb and GaAs heterointerface.}, keywords = {a-Si/c-Si heterojunction, Alternative energy, Engineering, Nanostructure, Photovoltaics, Solar}, url = {http://hdl.handle.net/2286/R.I.14312}, author = {Ghosh, Kunal} } @article {Luque2003, title = {Handbook of Photovoltaic Science and Engineering}, year = {2003}, note = {

1. Status, Trends, Challenges and the Bright Future of Solar Electricity from Photovoltaics.\ 

2. Motivation for Photovoltaic Application and Development

3. The Physics of the Solar Cell

4. Theoretical Limits of Photovoltaic\ Conversion

5. Solar Grade Silicon Feedstock\ 

6. Bulk Crystal Growth and Wafering\ for PV

7. Crystalline Silicon Solar Cells and Modules\ 

8. Thin-film Silicon Solar Cells\ 

9. High-efficiency III-V Multijunction\ Solar Cells

10. Space Solar Cells and Arrays

11. Photovoltaic Concentrators\ 

12. Amorphous Silicon-based Solar Cells\ 

13. Cu(InGa)Se2 Solar Cells

14. Cadmium Telluride Solar Cells

15. Dye-sensitized Solar Cells

16. Measurement and Characterization of Solar Cells and Modules

17. Photovoltaic Systems

18. Electrochemical Storage for Photovoltaics

19. Power Conditioning for Photovoltaic Power Systems

20. Energy Collected and Delivered by PV Modules

21. Economic Analysis and Environmental Aspects of Photovoltaic\ Systems

22. PV in Architecture

23. Photovoltaics\ and Development

24. Financing PV Growth\ 

Index

}, pages = {1117}, publisher = {John Wiley \& Sons Ltd.}, address = {Chichester, England}, isbn = {0-471-49196-9}, url = {http://www.amazon.com/Handbook-Photovoltaic-Science-Engineering-Antonio/dp/0471491969/ref=pd_sim_b_7}, author = {Luque, A. and Hegedus, S.} } @article {Campbell2001, title = {High performance light trapping textures for monocrystalline silicon solar cells}, journal = {Solar Energy Materials and Solar Cells}, volume = {65}, year = {2001}, month = {Jan-01-2001}, pages = {369 - 375}, abstract = {Two novel texture schemes for the front of a c-Si silicon wafer solar cell are presented. The {\textquotedblleft}bipyramid{\textquotedblright} texture is of two inverted pyramids of similar sizes laid out in alternating order. The {\textquotedblleft}patch{\textquotedblright} texture uses a checkerboard layout of blocks of parallel grooves, with the grooves of alternating blocks perpendicularly oriented to each other. We estimate that these textures, which almost fully trap light for the first six passes through the substrate, can deliver better optical performance than the standard inverted pyramid texture, especially in narrow-band applications.}, issn = {09270248}, doi = {10.1016/S0927-0248(00)00115-X}, author = {Campbell, Patrick and Martin A Green} } @conference {friedlmeier1997heterojunctions, title = {Heterojunctions based on Cu2ZnSnS4 and Cu2ZnSnSe4 thin films}, booktitle = {14th European PVSEC}, year = {1997}, author = {Friedlmeier, Th Magorian and Wieser, N and Walter, Th and Dittrich, H and Schock, HW} } @article {Logothetis1979, title = {Hall coefficient and reflectivity evidence that TiS 2 is a semiconductor}, journal = {Journal of Physics C: Solid State Physics}, volume = {12}, year = {1979}, pages = {L521}, abstract = {A series of measurements of the Hall coefficient, infrared reflectivity, thermoelectric power and electrical resistivity of Ti 1+x S 2 single crystals with various degrees of stoichiometry is described, where, for the first time, each measurement was made on the same crystal (or crystals from the same batch). None of these measurements taken alone can distinguish between the semimetallic or semiconducting models of TiS 2 . However, by making all four measurements on each sample, it has been possible to establish correlations between the results for different samples. It was found that the product of the Hall coefficient and the square of the plasma frequency is the same for all samples, a result that is consistent with a semiconductor model, but is inconsistent with a semimetal. Nevertheless the most stoichiometric samples remain metallic with electron concentrations of 2*10 20 cm -3 . It was also found that the resistivity data cannot be explained by carrier-carrier or optical phonon scattering. Therefore, both the source of the residual conduction electrons and the scattering mechanism in TiS 2 remain unknown.}, url = {http://stacks.iop.org/0022-3719/12/i=13/a=007}, author = {E M Logothetis and W J Kaiser and C A Kukkonen and S P Faile and R Colella and J Gambold} } @article {Logothetis1979a, title = {Hall coefficient and reflectivity evidence that TiS 2 is a semiconductor}, journal = {Journal of Physics C: Solid State Physics}, volume = {12}, year = {1979}, month = {Feb-07-1980}, pages = {L521 - L526}, issn = {0022-3719}, doi = {10.1088/0022-3719/12/13/007}, url = {http://stacks.iop.org/0022-3719/12/i=13/a=007?key=crossref.7b34e84721f0d96f60dce7c3e44ba4c7}, author = {Logothetis, E M and W J Kaiser and Kukkonen, C A and S P Faile and Colella, R and J Gambold} } @proceedings {Wolf1976, title = {Historical Development of Solar Cells}, year = {1976}, note = {
}, publisher = {IEEE Press}, author = {M. Wolf} } @article {531, title = {High Electron Mobility in Zinc Selenide Through Low-Temperature Annealing}, journal = {Journal of Applied Physics}, volume = {42}, year = {1971}, month = {Jan-01-1971}, pages = {1204}, abstract = {Electron mobility in ZnSe has been measured between 40{\textdegree} and 400{\textdegree}K. It is shown that through repeated annealing in liquid Zn the mobility maximum can be increased to 12 000 cm2/V sec. This is one of the highest mobilities measured for semiconductors with band gaps as wide as that of ZnSe (2.7 eV). The increase in mobility is mainly due to elimination of doubly charged acceptor states. The residual scattering is believed to be due, in part, to charged isolated impurities and, in part, to paired impurity dipoles.}, issn = {00218979}, doi = {10.1063/1.1660167}, author = {Aven, M.} } @conference {Dale1960, title = {High efficiency silicon solar cells}, booktitle = {Proceedings of the 14th Annual Power Sources Conference}, year = {1960}, note = {
}, month = {1960}, pages = {22}, publisher = {U.S. Army Signal Research and Development Lab}, organization = {U.S. Army Signal Research and Development Lab}, author = {B. Dale and H.G. Rudenberg} }