@article {Nakamura2019Cdfree, title = {Cd-Free Cu(In,Ga)(Se,S)2 Thin-Film Solar Cell With Record Efficiency of 23.35\%}, journal = {IEEE Journal of Photovoltaics}, volume = {9}, year = {2019}, pages = {1863-1867}, doi = {10.1109/JPHOTOV.2019.2937218}, url = {https://ieeexplore-ieee-org.udel.idm.oclc.org/document/8825469/authors$\#$authors}, author = {M. Nakamura and K. Yamaguchi and Y. Kimoto and Y. Yasaki and T. Kato and H. Sugimoto} } @inbook {mcevoy2012solar, title = {Cu(In,Ga)Se2 Thin-Film Solar Cells}, booktitle = {Solar Cells: Materials, Manufacture and Operation}, year = {2012}, pages = {262}, publisher = {Academic Press}, organization = {Academic Press}, address = {London}, author = {Rau, U. and Schock, H.W. and Castaner, L}, editor = {McEvoy, Augustin and Markvart, Tom} } @article {puthussery2011, title = {Colloidal Iron Pyrite (FeS 2 ) Nanocrystal Inks for Thin-Film Photovoltaics}, journal = {Journal of the American Chemical Society}, volume = {133}, year = {2011}, month = {Feb-02-2011}, pages = {716 - 719}, issn = {0002-7863}, doi = {10.1021/ja1096368}, url = {http://pubs.acs.org/doi/abs/10.1021/ja1096368http://pubs.acs.org/doi/pdf/10.1021/ja1096368}, author = {Puthussery, James and Seefeld, Sean and Berry, Nicholas and Gibbs, Markelle and Law, Matt} } @inbook {luque2011handbook, title = {Cu(InGa)Se2 Solar Cells}, booktitle = {Handbook of photovoltaic science and engineering}, year = {2011}, pages = {546-599}, publisher = {John Wiley \& Sons}, organization = {John Wiley \& Sons}, edition = {2}, chapter = {13}, author = {Shafarman, William and Sieventritt, Susanne and Stolt, Lars}, editor = {Luque, Antonio and Hegedus, Steven} } @article {Raksa2009, title = {Copper oxide thin film and nanowire as a barrier in ZnO dye-sensitized solar cells}, journal = {Thin Solid Films}, volume = {517}, year = {2009}, month = {Jan-07-2009}, pages = {4741 - 4744}, issn = {00406090}, doi = {10.1016/j.tsf.2009.03.027}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0040609009004799}, author = {Raksa, Phathaitep and Nilphai, Sanpet and Gardchareon, Atcharawon and Choopun, Supab} } @article {chen2009crystal, title = {Crystal and electronic band structure of Cu2ZnSnX4 (X= S and Se) photovoltaic absorbers: first-principles insights}, journal = {Applied Physics Letters}, volume = {94}, year = {2009}, pages = {41903}, author = {Chen, Shiyou and Gong, XG and Walsh, Aron and Wei, Su-Huai} } @article {Tan2007, title = {Crystallinity and surface effects on Young{\textquoteright}s modulus of CuO nanowires}, journal = {Applied Physics Letters}, volume = {90}, year = {2007}, month = {Jan-01-2007}, pages = {163112}, issn = {00036951}, doi = {10.1063/1.2723654}, url = {http://link.aip.org/link/APPLAB/v90/i16/p163112/s1\&Agg=doi}, author = {Tan, E. P. S. and Zhu, Y. and Yu, T. and Dai, L. and Sow, C. H. and Tan, V. B. C. and Lim, C. T.} } @article {Sato2005, title = {Characterization of electrical properties and photosensitivity of SnS thin films prepared by the electrochemical deposition method}, journal = {Solar Energy Materials and Solar Cells}, volume = {85}, year = {2005}, month = {Jan-01-2005}, pages = {153 - 165}, abstract = {Using the electrochemical deposition (ECD) method, we prepared tin sulfide thin films, which are suitable for the absorption layer in solar cells because of its bandgap energy (\~{}1 eV). We first optimized pulse-form biasing for ECD by characterizing deposited samples with scanning electron microscope, Auger electron spectroscopy and X-ray diffraction measurements. Then, we investigated the electrical properties of deposited SnS thin films and the properties of contacts with several different metals. Furthermore, we observed the photoconductivity of the films by means of photoelectrochemical measurements. From these results, we confirmed that the SnS thin films show p-type conduction.}, issn = {09270248}, doi = {10.1016/j.solmat.2004.04.014}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0927024804002077http://api.elsevier.com/content/article/PII:S0927024804002077?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:S0927024804002077?httpAccept=text/plain}, author = {Sato, Naoya and Ichimura, Masaya and Arai, Eisuke and Yamazaki, Yoshihisa} } @article {Blanco2001, title = {Computing the solar vector}, journal = {Solar Energy}, volume = {70}, year = {2001}, month = {Jan-01-2001}, pages = {431 - 441}, issn = {0038092X}, doi = {10.1016/S0038-092X(00)00156-0}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0038092X00001560http://api.elsevier.com/content/article/PII:S0038092X00001560?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:S0038092X00001560?httpAccept=text/plain}, author = {Blanco-Muriel, Manuel and Alarc{\'o}n-Padilla, Diego C. and L{\'o}pez-Moratalla, Teodoro and Lara-Coira, Mart{\'I}n} } @article {BlancoMuriel2001, title = {Computing the solar vector}, journal = {Solar Energy}, volume = {70}, number = {5}, year = {2001}, note = {
}, pages = {431 - 441}, keywords = {Solar tracking}, issn = {0038-092X}, doi = {DOI: 10.1016/S0038-092X(00)00156-0}, url = {http://www.sciencedirect.com/science/article/B6V50-42G6KWJ-5/2/a61a5c50128325f281ca2e33e01de993}, author = {Manuel Blanco-Muriel and Diego C. Alarc{\'o}n-Padilla and Teodoro L{\'o}pez-Moratalla and Mart{\'I}n Lara-Coira} } @article {Schmidt2000, title = {Coulomb-enhanced Auger recombination in crystalline silicon at intermediate and high injection densities}, journal = {Journal of Applied Physics}, volume = {88}, number = {3}, year = {2000}, pages = {1494-1497}, publisher = {AIP}, keywords = {Auger effect, carrier lifetime, electron-hole recombination, elemental semiconductors, photoconductivity, SILICON}, doi = {10.1063/1.373878}, url = {http://link.aip.org/link/?JAP/88/1494/1}, author = {Jan Schmidt and Mark J Kerr and Pietro P Altermatt} } @article {Maruyama1998, title = {Copper oxide thin films prepared by chemical vapor deposition from copper dipivaloylmethanate}, journal = {Solar Energy Materials and Solar Cells}, volume = {56}, year = {1998}, month = {Jan-09-1998}, pages = {85 - 92}, issn = {09270248}, doi = {10.1016/S0927-0248(98)00128-7}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0927024898001287}, author = {Maruyama, Toshiro} } @article {Sinton1996, title = {Contactless determination of current{\textendash}voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data}, journal = {Applied Physics Letters}, volume = {69}, number = {17}, year = {1996}, pages = {2510-2512}, publisher = {AIP}, keywords = {carrier lifetime, CV CHARACTERISTIC, MINORITY CARRIERS, photoconductivity, SEMICONDUCTOR MATERIALS, SILICON, STEADY {\textendash} STATE CONDITIONS}, doi = {10.1063/1.117723}, url = {http://link.aip.org/link/?APL/69/2510/1}, author = {Ronald A. Sinton and Andr{\'e}s Cuevas} } @article {Desai1995, title = {Chemical deposition of Bi2S3 thin films from thioacetamide bath}, journal = {Materials Chemistry and Physics}, volume = {41}, year = {1995}, month = {Jan-07-1995}, pages = {98 - 103}, issn = {02540584}, doi = {10.1016/0254-0584(95)01538-8}, url = {http://linkinghub.elsevier.com/retrieve/pii/0254058495015388}, author = {Desai, J.D. and Lokhande, C.D.} } @article {Lew1994, title = {CVD routes to titanium disulfide films}, journal = {Advanced Materials}, volume = {6}, year = {1994}, month = {Jan-03-1994}, pages = {237 - 239}, issn = {0935-9648}, doi = {10.1002/(ISSN)1521-409510.1002/adma.v6:310.1002/adma.19940060313}, url = {http://doi.wiley.com/10.1002/adma.19940060313}, author = {Lewkebandara, T.S. and Winter, Charles H.} } @article {Parrott1993, title = {Choice of an equivalent black body solar temperature}, journal = {Solar Energy}, volume = {51}, number = {3}, year = {1993}, note = {
}, month = {09/1993}, pages = {195 - 195}, issn = {0038-092X}, doi = {DOI: 10.1016/0038-092X(93)90096-7}, url = {http://www.sciencedirect.com/science/article/B6V50-497TD5S-1HX/2/5b4be52ce15a1f2f2b664fe8bbb37cb6}, author = {J.E. Parrott} } @article {Knight2003, title = {The crystal structures of CuInSe2 and CuInTe2}, journal = {Materials Research Bulletin}, volume = {27}, year = {1992}, month = {Jan-02-1992}, pages = {161 - 167}, issn = {00255408}, doi = {10.1016/0025-5408(92)90209-I}, url = {http://linkinghub.elsevier.com/retrieve/pii/002554089290209Ihttp://api.elsevier.com/content/article/PII:002554089290209I?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:002554089290209I?httpAccept=text/plain}, author = {Knight, K.S.} } @article {Eades1985, title = {Calculation of surface generation and recombination velocities at the Si-SiO2 interface}, journal = {Journal of Applied Physics}, volume = {58}, year = {1985}, note = {
}, month = {1985}, pages = {4267}, issn = {00218979}, doi = {10.1063/1.335562}, author = {Eades, Wendell D. and Richard M Swanson} } @article {wagner1974cuinse2, title = {CuInSe2/CdS heterojunction photovoltaic detectors}, journal = {Applied Physics Letters}, volume = {25}, year = {1974}, pages = {434{\textendash}435}, author = {Wagner, Sigurd and Shay, JL and Migliorato, P and Kasper, HM} } @book {Wyckoff1963, title = {Crystal Structures 1}, series = {Crystal Structures}, volume = {1}, year = {1963}, publisher = {Interscience Publishers}, organization = {Interscience Publishers}, edition = {2nd}, address = { New York, New York}, url = {http://rruff.geo.arizona.edu/AMS/AMC_text_files/13434_amc.txt}, author = {Ralph W G Wyckoff} } @article {567, title = {Conversion of Solar to Electrical Energy}, journal = {American Journal of Physics}, volume = {25}, year = {1957}, month = {Jan-01-1957}, pages = {591}, abstract = {A photovoltaic device has been developed which converts solar radiation directly into electrical energy with an over-all efficiency of 11\%. This consists of a p-n junction formed by gaseous diffusion near the front surface of a silicon plate. In full sunlight a single cell furnishes approximately 30 ma of short circuit current per square centimeter of surface, 0.6 v of open circuit voltage, and 12 mw of power into a matched load per square centimeter of surface. Like other electric batteries, individual cells may be connected in series or parallel to obtain an increase in terminal voltage or current. The spectral response is a maximum near 0.7 {\textmu}, and the long wavelength cutoff is at approximately 1.1 {\textmu}. The efficiency of this new siliconp-n junctionphotovoltaic cell is greater by a factor of 20 than that previously reported for other types of photocells and makes the conversion of the sun{\textquoteright}s energy directly into electricity possible for a number of interesting applications. A Bell System field trial at Americus, Georgia, in which solar batteries are used to power a rural carrier telephone communication system, is described. A number of other possible applications for this new solar energy converter are discussed.}, issn = {00029505}, doi = {10.1119/1.1934565}, url = {http://link.aip.org/link/?AJP/25/591/1\&Agg=doi}, author = {Pearson, G. L.} } @article {Grondahl1933, title = {The Copper-Cuprous-Oxide Rectifier and Photoelectric Cell}, journal = {Review of Modern Physics}, volume = {5}, year = {1933}, note = {
}, pages = {141}, author = {Grondahl, L.O.} } @article {Braun1874, title = {On Conductance in Metal Sulphides}, journal = {Ann. d. Physik}, volume = {153}, year = {1874}, note = {
}, pages = {556}, author = {Braun, F.} }