@booklet {Thurber1981,
title = {The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon},
year = {1981},
note = {
},
publisher = {U.S. Department of Commerce National Bureau of Standards},
author = {W R Thurber and Mattis and Liu and Filliben}
}
@article {Thurber1980boron,
title = {Resistivity-Dopant Density Relationship for Boron-Doped Silicon},
journal = {Journal of The Electrochemical Society},
volume = {127},
number = {10},
year = {1980},
note = {
},
pages = {2291-2294},
publisher = {ECS},
keywords = {boron, electrical resistivity, Hall effect, hole density, semiconductor doping, SILICON},
doi = {10.1149/1.2129394},
url = {http://link.aip.org/link/?JES/127/2291/1},
author = {W R Thurber and R. L. Mattis and Y. M. Liu and J. J. Filliben}
}
@article {Thurber1980phos,
title = {Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon},
journal = {Journal of The Electrochemical Society},
volume = {127},
number = {8},
year = {1980},
pages = {1807-1812},
publisher = {ECS},
keywords = {density, electrical resistivity, electron mobility, Hall effect, neutron activation analysis, phosphorus, photometry, semiconductor doping, SILICON},
doi = {10.1149/1.2130006},
url = {http://link.aip.org/link/?JES/127/1807/1},
author = {W R Thurber and R. L. Mattis and Y. M. Liu and J. J. Filliben}
}