@article {feurer2017progress, title = {Progress in thin film CIGS photovoltaics{\textendash}Research and development, manufacturing, and applications}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {25}, year = {2017}, pages = {645{\textendash}667}, author = {Feurer, Thomas and Reinhard, Patrick and Avancini, Enrico and Bissig, Benjamin and L{\"o}ckinger, Johannes and Fuchs, Peter and Carron, Romain and Weiss, Thomas Paul and Perrenoud, Julian and Stutterheim, Stephan and Buecheler, Stephan and Tiwari, Ayodhya N.} } @article {wang2014device, title = {Device characteristics of CZTSSe thin-film solar cells with 12.6\% efficiency}, journal = {Advanced Energy Materials}, volume = {4}, year = {2014}, author = {Wang, Wei and Winkler, Mark T and Oki Gunawan and Tayfun Gokmen and Todorov, Teodor K and Zhu, Yu and Mitzi, David B} } @article {Gokmen2013, title = {Band tailing and efficiency limitation in kesterite solar cells}, journal = {Applied Physics Letters}, volume = {103}, year = {2013}, pages = {103506}, doi = {10.1063/1.4820250}, url = {http://dx.doi.org/10.1063/1.4820250}, author = {Tayfun Gokmen and Oki Gunawan and Teodor K. Todorov and David B. Mitzi} } @article {powalla2013high, title = {High-efficiency Cu(In,Ga)Se2 cells and modules}, journal = {Solar energy materials and solar cells}, volume = {119}, year = {2013}, pages = {51{\textendash}58}, author = {Powalla, Michael and Jackson, Philip and Witte, Wolfram and Hariskos, Dimitrios and Paetel, Stefan and Tschamber, Carsten and Wischmann, Wiltraud} } @article {pettersson2013influence, title = {The Influence of Absorber Thickness on Cu(In,Ga)Se2 Solar Cells With Different Buffer Layers}, journal = {IEEE journal of photovoltaics}, volume = {3}, year = {2013}, pages = {1376{\textendash}1382}, doi = {10.1109/JPHOTOV.2013.2276030}, url = {https://ieeexplore.ieee.org/abstract/document/6579660}, author = {Pettersson, Jonas and T{\"o}rndahl, Tobias and Platzer-Bj{\"o}rkman, Charlotte and Hultqvist, Adam and Edoff, Marika} } @article {533, title = {Isotextured Silicon Solar Cell Analysis and Modeling 1: Optics}, journal = {IEEE Journal of Photovoltaics}, volume = {2}, year = {2012}, month = {Jan-10-2012}, pages = {457 - 464}, issn = {2156-3381}, doi = {10.1109/JPHOTOV.2012.2206569}, author = {Baker-Finch, Simeon C. and McIntosh, Keith R. and Terry, Mason L.} } @article {Mitzi2011, title = {The path towards a high-performance solution-processed kesterite solar cell}, journal = {Solar Energy Materials and Solar Cells}, volume = {95}, year = {2011}, pages = {1421 - 1436}, abstract = {Despite the promise of thin-film Cu(In,Ga)(S,Se)2 (CIGSSe) chalcopyrite and CdTe photovoltaic technologies with respect to reducing cost per watt of solar energy conversion, these approaches rely on elements that are either costly and/or rare in the earth{\textquoteright}s crust (e.g., In, Ga, Te) or that present toxicity issues (e.g., Cd), thereby potentially limiting these technologies in terms of future cost reduction and production growth. In order to develop a photovoltaic technology that is truly compatible with terawatt deployment, it is desirable to consider material systems that employ less toxic and lower cost elements, while maintaining the advantages of the chalcopyrite and CdTe materials with respect to appropriate direct band gap tunability over the solar spectrum, high device performance (e.g., \>10\% power conversion efficiency) and compatibility with low-cost manufacturing. In this review, the development of kesterite-based Cu2ZnSn(S,Se)4 (CZTSSe) thin-film solar cells, in which the indium and gallium from \{CIGSSe\} are replaced by the readily available elements zinc and tin, will be reviewed. While vacuum-deposited devices have enabled optimization within the compositional phase space and yielded selenium-free \{CZTS\} device efficiencies of as high as 6.8\%, more recently a liquid-based approach has been described that has enabled deposition of \{CZTSSe\} devices with power conversion efficiency of 9.7\%, bringing the kesterite-based technology into a range of potential commercial interest. Electrical characterization studies on these high-performance \{CZTSSe\} cells reveal some of the key loss mechanisms (e.g., dominant interface recombination, high series resistance and low minority carrier lifetime) that limit the cell performance. Further elucidation of these mechanisms, as well as building an understanding of long-term device stability, are required to help propel this relatively new technology forward.}, keywords = {Solution processing}, issn = {0927-0248}, doi = {http://dx.doi.org/10.1016/j.solmat.2010.11.028}, url = {http://www.sciencedirect.com/science/article/pii/S0927024810006719}, author = {David B. Mitzi and Oki Gunawan and Teodor K. Todorov and Kejia Wang and Supratik Guha} } @article {Zwolenski2011, title = {A Theoretical Search for Efficient Dopants in Mg2X (X~=~Si, Ge, Sn) Thermoelectric Materials}, journal = {Journal of Electronic Materials}, volume = {40}, year = {2011}, month = {Jan-05-2011}, pages = {889 - 897}, issn = {0361-5235}, doi = {10.1007/s11664-011-1624-y}, url = {http://link.springer.com/10.1007/s11664-011-1624-yhttp://www.springerlink.com/index/pdf/10.1007/s11664-011-1624-y}, author = {Zwolenski, P. and Tobola, J. and Kaprzyk, S.} } @proceedings {Takamoto2010, title = {World{\textquoteright}s Highest Efficiency Triple-junction Solar Cells Fabricated by Inverted Layers Transfer Process}, year = {2010}, note = {
}, address = {Honolulu HI, USA}, author = {Takamoto, T. and Agui, T. and Yoshida, A. and Nakaido, K. and Juso, H. and Sasaki, K. and Nakamura, K. and Yamaguchi, H. and Kodama, T. and Washio, H. and Imazumi, M. and Takahashi, M.} } @article {Katagiri2009, title = {Development of CZTS-based thin film solar cells}, journal = {Thin Solid Films}, volume = {517}, year = {2009}, pages = {2455{\textendash}2460}, author = {Hironori Katagiri and Jimbo, Kazuo and Maw, Win Shwe and Oishi, Koichiro and Yamazaki, Makoto and Araki, Hideaki and Takeuchi, Akiko} } @article {Calixto2009, title = {Structural, optical, and electrical properties of tin sulfide thin films grown by spray pyrolysis}, journal = {Thin Solid Films}, volume = {517}, year = {2009}, month = {Jan-02-2009}, pages = {2497 - 2499}, issn = {00406090}, doi = {10.1016/j.tsf.2008.11.026}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0040609008014077http://api.elsevier.com/content/article/PII:S0040609008014077?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:S0040609008014077?httpAccept=text/plain}, author = {Calixto-Rodriguez, M. and Martinez, H. and Sanchez-Juarez, A. and Campos-Alvarez, J. and Tiburcio-Silver, A. and Calixto, M.E.} } @article {Tan2007, title = {Crystallinity and surface effects on Young{\textquoteright}s modulus of CuO nanowires}, journal = {Applied Physics Letters}, volume = {90}, year = {2007}, month = {Jan-01-2007}, pages = {163112}, issn = {00036951}, doi = {10.1063/1.2723654}, url = {http://link.aip.org/link/APPLAB/v90/i16/p163112/s1\&Agg=doi}, author = {Tan, E. P. S. and Zhu, Y. and Yu, T. and Dai, L. and Sow, C. H. and Tan, V. B. C. and Lim, C. T.} } @article {Parhizkar2005, title = {Nanocrystalline CuO films prepared by pyrolysis of Cu-arachidate LB multilayers}, journal = {Colloids and Surfaces A: Physicochemical and Engineering Aspects}, volume = {257-258}, year = {2005}, month = {Jan-05-2005}, pages = {277 - 282}, issn = {09277757}, doi = {10.1016/j.colsurfa.2004.10.029}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0927775704007320}, author = {Parhizkar, M. and Singh, Sukhvinder and Nayak, P.K. and Kumar, Nigvendra and Muthe, K.P. and Gupta, S.K. and Srinivasa, R.S. and Talwar, S.S. and Major, S.S.} } @article {Fuyuki2005, title = {Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence}, journal = {Applied Physics Letters}, volume = {86}, number = {26}, year = {2005}, pages = {262108}, publisher = {AIP}, keywords = {carrier lifetime, electroluminescence, elemental semiconductors, MINORITY CARRIERS, SILICON, solar cells}, doi = {10.1063/1.1978979}, url = {http://link.aip.org/link/?APL/86/262108/1}, author = {Takashi Fuyuki and Hayato Kondo and Tsutomu Yamazaki and Yu Takahashi and Yukiharu Uraoka} } @article {Tani2005, title = {Thermoelectric properties of Bi-doped Mg2Si semiconductors}, journal = {Physica B: Condensed Matter}, volume = {364}, year = {2005}, month = {Jan-07-2005}, pages = {218 - 224}, issn = {09214526}, doi = {10.1016/j.physb.2005.04.017}, url = {http://linkinghub.elsevier.com/retrieve/pii/S092145260500709X}, author = {Tani, Jun-ichi and Kido, Hiroyasu} } @article {rudmann2003effects, title = {Effects of NaF coevaporation on structural properties of Cu (In, Ga) Se2 thin films}, journal = {Thin Solid Films}, volume = {431}, year = {2003}, pages = {37{\textendash}40}, author = {Rudmann, D and Bilger, G and Kaelin, M and Haug, F-J and Zogg, H and Tiwari, AN} } @article {altermatt2002, title = {Specifying targets of future research in photovoltaic devices containing pyrite (FeS2) by numerical modelling}, journal = {Solar Energy Materials and Solar Cells}, volume = {71}, year = {2002}, month = {Jan-02-2002}, pages = {181 - 195}, issn = {09270248}, doi = {10.1016/S0927-0248(01)00053-8}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0927024801000538http://api.elsevier.com/content/article/PII:S0927024801000538?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:S0927024801000538?httpAccept=text/plain}, author = {Pietro P Altermatt and Kiesewetter, Tobias and Ellmer, Klaus and Tributsch, Helmut} } @article {rumberg2000, title = {ZnSe thin films grown by chemical vapour deposition for application as buffer layer in CIGSS solar cells}, journal = {Thin Solid Films}, volume = {361-362}, year = {2000}, month = {Jan-02-2000}, pages = {172 - 176}, issn = {00406090}, doi = {10.1016/S0040-6090(99)00790-7}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0040609099007907http://api.elsevier.com/content/article/PII:S0040609099007907?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:S0040609099007907?httpAccept=text/plain}, author = {Rumberg, A. and Sommerhalter, Ch. and Toplak, M. and J{\"a}ger-Waldau, A. and Lux-Steiner, M.Ch.} } @article {thomas1999, title = {Photoeffects in cobalt doped pyrite (FeS 2 ) films}, journal = {Solid State Communications}, volume = {111}, year = {1999}, month = {Jan-07-1999}, pages = {235 - 240}, issn = {00381098}, doi = {10.1016/S0038-1098(99)00213-6}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0038109899002136http://api.elsevier.com/content/article/PII:S0038109899002136?httpAccept=text/plainhttp://api.elsevier.com/content/article/PII:S0038109899002136?httpAccept=text/xml}, author = {Thomas, B. and Ellmer, K. and Bohne, W. and R{\"o}hrich, J. and Kunst, M. and Tributsch, H.} } @article {Lokhande1998, title = {Process and characterisation of chemical bath deposited manganese sulphide (MnS) thin films}, journal = {Thin Solid Films}, volume = {330}, year = {1998}, month = {Jan-09-1998}, pages = {70 - 75}, issn = {00406090}, doi = {10.1016/S0040-6090(98)00500-8}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0040609098005008}, author = {Lokhande, C.D. and Ennaoui, A. and Patil, P.S. and Giersig, M. and Muller, M. and Diesner, K. and Tributsch, H.} } @conference {Pu1994, title = {Investigation on SnS film by RF sputtering for photovoltaic application}, booktitle = {1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)}, year = {1994}, publisher = {IEEE}, organization = {IEEE}, address = {Waikoloa, HI, USA}, doi = {10.1109/WCPEC.1994.519977}, url = {http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=519977}, author = {Wei Guang-Pu and Zhang Zhi-Lin and Zhao Wei-Ming and Gao Xiang-Hong and Chen Wei-Qun and Tanamura, H. and Yamaguchi, M. and Noguchi, H. and Nagatomo, T. and Omoto, O.} } @article {Misiakos93, title = {Accurate measurements of the silicon intrinsic carrier density from 78 to 340 K}, journal = {Journal of Applied Physics}, volume = {74}, year = {1993}, month = {Jan-01-1993}, pages = {3293}, abstract = {The intrinsic carrier density in silicon has been measured by a novel technique based on low-frequency capacitance measurements of a p+-i-n+ diode biased in high injection. The major advantage of the method is its insensitivity to uncertainties regarding the exact values of the carrier mobilities, the recombination parameters, and the doping density. The intrinsic carrier density was measured in the temperature range from 78 to 340 K. At 300 K the value of ni was found to be (9.7{\textpm}0.1){\texttimes}10^9 cm-3.}, issn = {00218979}, doi = {10.1063/1.354551}, author = {Misiakos, Konstantinos and Tsamakis, Dimitris} } @article {adachi1991, title = {Optical properties of ZnSe}, journal = {Physical Review B}, volume = {43}, year = {1991}, month = {Jan-04-1991}, pages = {9569 - 9577}, issn = {0163-1829}, doi = {10.1103/PhysRevB.43.9569}, url = {https://link.aps.org/doi/10.1103/PhysRevB.43.9569http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.43.9569/fulltexthttp://link.aps.org/article/10.1103/PhysRevB.43.9569}, author = {Adachi, Sadao and Taguchi, Tsunemasa} } @article {Tiedje1984, title = {Limiting Efficiency of Silicon Solar Cells}, journal = {IEEE TRANSACTIONS ON ELECTRON DEVICES}, volume = {ED-31}, year = {1984}, note = {
}, month = {05/1984}, author = {T. Tiedje and E Yablonovich and G.D. Cody and B.G. Brooks} } @booklet {Thurber1981, title = {The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon}, year = {1981}, note = {
}, publisher = {U.S. Department of Commerce National Bureau of Standards}, author = {W R Thurber and Mattis and Liu and Filliben} } @article {Thurber1980boron, title = {Resistivity-Dopant Density Relationship for Boron-Doped Silicon}, journal = {Journal of The Electrochemical Society}, volume = {127}, number = {10}, year = {1980}, note = {
}, pages = {2291-2294}, publisher = {ECS}, keywords = {boron, electrical resistivity, Hall effect, hole density, semiconductor doping, SILICON}, doi = {10.1149/1.2129394}, url = {http://link.aip.org/link/?JES/127/2291/1}, author = {W R Thurber and R. L. Mattis and Y. M. Liu and J. J. Filliben} } @article {Thurber1980phos, title = {Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon}, journal = {Journal of The Electrochemical Society}, volume = {127}, number = {8}, year = {1980}, pages = {1807-1812}, publisher = {ECS}, keywords = {density, electrical resistivity, electron mobility, Hall effect, neutron activation analysis, phosphorus, photometry, semiconductor doping, SILICON}, doi = {10.1149/1.2130006}, url = {http://link.aip.org/link/?JES/127/1807/1}, author = {W R Thurber and R. L. Mattis and Y. M. Liu and J. J. Filliben} } @article {Whittingham1975, title = {Intercalation and lattice expansion in titanium disulfide}, journal = {The Journal of Chemical Physics}, volume = {62}, year = {1975}, month = {Jan-01-1975}, pages = {1588}, abstract = {The temperature coefficient of expansion has been measured for the a and c axes of titanium disulfide, and of its intercalates with a metal, lithium, and an organic base, s-collidine. The anisotropy in the expansion coefficients is related to the bonding in the structure.}, issn = {00219606}, doi = {10.1063/1.430581}, url = {http://link.aip.org/link/?JCP/62/1588/1\&Agg=doi}, author = {Stanley M Whittingham and Arthur H Thompson} } @article {Tsai1969, title = {Shallow phosphorus diffusion profiles in silicon}, journal = {Proceedings of the IEEE}, volume = {57}, year = {1969}, month = {Jan-09-1969}, pages = {1499 - 1506}, issn = {0018-9219}, doi = {10.1109/PROC.1969.7325}, url = {http://ieeexplore.ieee.org/document/1449255/http://xplorestaging.ieee.org/ielx5/5/31124/01449255.pdf?arnumber=1449255}, author = {Tsai, J.C.C.} } @article {Nix1939, title = {A Thallous Sulphide Photo EMF Cell}, journal = {Journal Opt. Society of America}, volume = {29}, year = {1939}, note = {
}, pages = {457}, author = {Nix, F.C. and Treptwo, A.W.} }