@article {Devika2006, title = {Microstructure dependent physical properties of evaporated tin sulfide films}, journal = {Journal of Applied Physics}, volume = {100}, year = {2006}, month = {Jan-01-2006}, pages = {023518}, abstract = {In the field of photovoltaics, semiconductors of the III-V group such as GaAs and InP have been considered as the most efficient absorber materials due to their direct energyband gap and high mobility. In these compounds, arsenic and phosphorus are highly toxic and expensive. In this work we present systematic preparation of low cost SnS thin films and characterize these films to test their suitability for photovoltaic applications. We have observed that the films (with thickness ≅0.5μm) grown at the substrate temperature of 275{\textdegree}C exhibit a low resistive single SnS phase and have a direct optical band gap of 1.35eV with an absorption coefficient of \~{}105cm-1. SnSfilms could be alternative semiconductor materials as absorbers for the fabrication of photovoltaic devices.}, issn = {00218979}, doi = {10.1063/1.2216790}, url = {http://scitation.aip.org/content/aip/journal/jap/100/2/10.1063/1.2216790}, author = {Devika, M. and Ramakrishna Reddy, K. T. and Koteeswara Reddy, N. and Ramesh, K. and Ganesan, R. and Gopal, E. S. R. and Gunasekhar, K. R.} } @article {Koteeswara2005, title = {Electrical properties of spray pyrolytic tin sulfide films}, journal = {Solid-State Electronics}, volume = {49}, year = {2005}, month = {Jan-06-2005}, pages = {902 - 906}, abstract = {Tin sulfide (SnxSy) films were prepared using spray pyrolysis technique at different substrate temperatures (Ts), (100{\textendash}450 {\textdegree}C) on Corning 7059 glass substrates. The physical parameters such as electrical resistivity, Hall mobility and net carrier density of the films were determined at room temperature. The films grown in the substrate temperature range, 300{\textendash}375 {\textdegree}C, were found to be p-type conducting. These SnS films showed average electrical resistivity of \~{}30 Ω cm, Hall mobility of \~{}130 cm2/V s and carrier density, >1015 cm-3. The temperature dependence of electrical conductivity of the films was also studied and the activation energies evaluated. The results obtained were discussed and reported.}, issn = {00381101}, doi = {10.1016/j.sse.2005.03.003}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0038110105000845}, author = {Koteeswara Reddy, N. and Ramakrishna Reddy, K.T.} }