@article {560,
	title = {On the Effect of Impurities on the Photovoltaic Behavior of Solar-Grade Silicon},
	journal = {Journal of The Electrochemical Society},
	volume = {131},
	year = {1984},
	month = {Jan-01-1984},
	pages = {2128},
	abstract = {The electrical and photovoltaic properties of partially compensated p-type silicon samples have been investigated in order to understand the influence of the contemporaneous presence of donors and acceptors on the behavior of majority and minority carriers. It has been shown that the majority carrier properties are only slightly influenced by the presence of donors in p-type samples and that the minority carrier properties depend on the excess acceptor concentration up to an excess donor concentration close to Formula . A theoretical explanation of these features has been proposed, on the base of the Shockley-Read-Hall model of recombination at shallow traps and donor-acceptor pairs formation. },
	issn = {00134651},
	doi = {10.1149/1.2116033},
	url = {http://jes.ecsdl.org/cgi/doi/10.1149/1.2116033},
	author = {Pizzini, S. and Calligarich, C.}
}
