@article {Nakamura2019Cdfree, title = {Cd-Free Cu(In,Ga)(Se,S)2 Thin-Film Solar Cell With Record Efficiency of 23.35\%}, journal = {IEEE Journal of Photovoltaics}, volume = {9}, year = {2019}, pages = {1863-1867}, doi = {10.1109/JPHOTOV.2019.2937218}, url = {https://ieeexplore-ieee-org.udel.idm.oclc.org/document/8825469/authors$\#$authors}, author = {M. Nakamura and K. Yamaguchi and Y. Kimoto and Y. Yasaki and T. Kato and H. Sugimoto} } @conference {nakamura2014recent, title = {Recent R\&D progress in solar frontier{\textquoteright}s small-sized Cu (InGa)(SeS)2 solar cells}, booktitle = {2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)}, year = {2014}, publisher = {IEEE}, organization = {IEEE}, author = {Nakamura, Motoshi and Yoneyama, Nobutaka and Horiguchi, Kyouhei and Iwata, Yasuaki and Yamaguchi, Koji and Sugimoto, Hiroki and Kato, Takuya} } @article {NASA2010, title = {GISS Surface Temperature Analysis}, year = {2010}, note = {
}, url = {http://data.giss.nasa.gov/gistemp/graphs/}, author = {NASA} } @proceedings {Takamoto2010, title = {World{\textquoteright}s Highest Efficiency Triple-junction Solar Cells Fabricated by Inverted Layers Transfer Process}, year = {2010}, note = {
}, address = {Honolulu HI, USA}, author = {Takamoto, T. and Agui, T. and Yoshida, A. and Nakaido, K. and Juso, H. and Sasaki, K. and Nakamura, K. and Yamaguchi, H. and Kodama, T. and Washio, H. and Imazumi, M. and Takahashi, M.} } @article {Raksa2009, title = {Copper oxide thin film and nanowire as a barrier in ZnO dye-sensitized solar cells}, journal = {Thin Solid Films}, volume = {517}, year = {2009}, month = {Jan-07-2009}, pages = {4741 - 4744}, issn = {00406090}, doi = {10.1016/j.tsf.2009.03.027}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0040609009004799}, author = {Raksa, Phathaitep and Nilphai, Sanpet and Gardchareon, Atcharawon and Choopun, Supab} } @article {Avellaneda2008, title = {Polymorphic Tin Sulfide Thin Films of Zinc Blende and Orthorhombic Structures by Chemical Deposition}, journal = {Journal of The Electrochemical Society}, volume = {155}, year = {2008}, month = {Jan-01-2008}, pages = {D517}, abstract = {Polycrystalline thin films (100{\textendash}450nm in thickness) of SnS formed from chemical baths of Sn(II) in acetic acid/HCl solution, triethanolamine, NH3 (aq), and thioacetamide are polymorphic consisting of zinc blende (ZB) and orthorhombic (OR) structures. The ZB structure for the SnS film, reported in this work for the first time, has a lattice constant a=0.579nm and a direct (forbidden) bandgap of 1.7eV , which is distinct from that of SnS(ZB) , about 1eV . The electrical conductivity of SnS(ZB) is 6{\texttimes}10-6 (Ωcm)-1 p-type, with activation energies for the conductivity of 0.5eV at room temperature and 1.6meV near 10K . When a SnS(ZB) film is heated in air at 500{\textdegree}C for 30min , part of it transforms to SnO2 and to SnS(OR) ; after 2h 30min at 550{\textdegree}C in air the film converts to transparent SnO2 . Such a film has a bandgap of 3.7eV and electrical conductivity, \~{}1 (Ωcm)-1 . Photovoltaic effect in different structures involving these films is presented. }, issn = {00134651}, doi = {10.1149/1.2917198}, url = {http://jes.ecsdl.org/cgi/doi/10.1149/1.2917198}, author = {Avellaneda, David and Nair, M. T. S. and Nair, P. K.} } @article {Parhizkar2005, title = {Nanocrystalline CuO films prepared by pyrolysis of Cu-arachidate LB multilayers}, journal = {Colloids and Surfaces A: Physicochemical and Engineering Aspects}, volume = {257-258}, year = {2005}, month = {Jan-05-2005}, pages = {277 - 282}, issn = {09277757}, doi = {10.1016/j.colsurfa.2004.10.029}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0927775704007320}, author = {Parhizkar, M. and Singh, Sukhvinder and Nayak, P.K. and Kumar, Nigvendra and Muthe, K.P. and Gupta, S.K. and Srinivasa, R.S. and Talwar, S.S. and Major, S.S.} } @article {Nelson2003, title = {The Physics of Solar Cells}, year = {2003}, note = {

1. Introduction

2. Photons In, Electrons Out: Basic Principles of PV

3. Electrons and Holes and Semiconductors

4. Generation and Recombination

5. Junctions

6. Analysis of the p-n Junction

7. Monocrystalline Solar Cells

8. Thin Film Solar Cells

9. Managing Light

10. Over the Limit: Strategies for High Efficiency

Solutions

Index

}, pages = {355}, publisher = {Imperial College Press}, address = {London, UK}, abstract = {
}, isbn = {1-86094-340-3}, url = {http://www.amazon.com/Physics-Solar-Properties-Semiconductor-Materials/dp/1860943497}, author = {Jenny Nelson} } @article {Nagel1999, title = {Generalized analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductors}, journal = {Journal of Applied Physics}, volume = {86}, number = {11}, year = {1999}, pages = {6218-6221}, publisher = {AIP}, keywords = {carrier lifetime, photoconductivity}, doi = {10.1063/1.371633}, url = {http://link.aip.org/link/?JAP/86/6218/1}, author = {Henning Nagel and Christopher Berge and Armin G Aberle} } @proceedings {Ruby1998, title = {Improved Performance of Self-Aligned, Selective-Emitter Silicon Solar Cells}, year = {1998}, note = {
}, month = {07/1998}, address = {Vienna, Austria}, author = {Ruby, D. S. and Yang, P. and Zaidi, S. and Brueck, S. and Roy, M. and Narayanan, S.} } @proceedings {Einhaus1997, title = {Isotropic texturing of multicrystalline silicon wafers with acidic texturing solutions}, year = {1997}, note = {
}, pages = {167-170, 1451}, address = {New York, NY, USA}, author = {Einhaus, R. and Vazsonyi, E. and Szlufcik, J. and Nijs, J. and Mertens, R.} } @proceedings {Szlufcik1997, title = {Low-cost industrial technologies of crystalline silicon solar cells}, volume = {85}, year = {1997}, note = {
}, pages = {711-730}, author = {Szlufcik, J. and Sivoththaman, S. and Nlis, J.F. and Mertens, R.P. and Van-Overstraeten, R.} } @proceedings {Horzel1997, title = {A simple processing sequence for selective emitters}, year = {1997}, note = {
}, pages = {139-142}, address = {New York, NY, USA}, author = {Horzel, J. and Szlufcik, J. and Nijs, J. and Mertens, R.} } @article {Jordan1994, title = {Buried contact concentrator solar cells}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {2}, year = {1994}, note = {
}, pages = {171-176}, author = {Jordan, D. and Nagle, J.P.} } @conference {Pu1994, title = {Investigation on SnS film by RF sputtering for photovoltaic application}, booktitle = {1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)}, year = {1994}, publisher = {IEEE}, organization = {IEEE}, address = {Waikoloa, HI, USA}, doi = {10.1109/WCPEC.1994.519977}, url = {http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=519977}, author = {Wei Guang-Pu and Zhang Zhi-Lin and Zhao Wei-Ming and Gao Xiang-Hong and Chen Wei-Qun and Tanamura, H. and Yamaguchi, M. and Noguchi, H. and Nagatomo, T. and Omoto, O.} } @article {Nair1993, title = {Structure and Composition of Chemically Deposited Thin Films of Bismuth Sulfide and Copper Sulfide Effect on Optical and Electrical Properties}, journal = {Journal of The Electrochemical Society}, volume = {140}, year = {1993}, pages = {754{\textendash}759}, abstract = {Chemically deposited thin films of bismuth sulfide (0.13 μm) and copper sulfide (0.3 μm) and copper sulfide films deposited on bismuth sulfide have been studied so as to obtain information about their structure, composition, thermal stability, and their effect on the optical and electrical properties. The studies establish that bismuth sulfide thin films become crystalline upon air annealing near {200{\textdegree}C} and remain stable up to {300{\textdegree}C.} But oxygen chemisorption reduces the photo- and dark conductivities of the films annealed at {300{\textdegree}C.} The studies establish that the copper sulfide films are (covellite), which is stable up to {220{\textdegree}C.} However, films deposited on bismuth sulfide substrate films retain useful electrical and optical properties for annealing temperatures up to {\~{}300{\textdegree}C.}}, keywords = {annealing, bismuth compounds, copper compounds, optical properties, Thin films}, issn = {0013-4651, 1945-7111}, doi = {10.1149/1.2056153}, url = {http://jes.ecsdl.org/content/140/3/754}, author = {Nair, P. K. and Nair, M. T. S. and Pathirana, Hema M. K. K. and Zingaro, Ralph A. and Meyers, Edward A.} } @article {Willeke1992, title = {A simple and effective light trapping technique for polycrystalline silicon solar cells}, journal = {Solar Energy Materials and Solar Cells}, volume = {26}, number = {4}, year = {1992}, pages = {345 - 356}, issn = {0927-0248}, doi = {DOI: 10.1016/0927-0248(92)90054-S}, url = {http://www.sciencedirect.com/science/article/B6V51-47XG9S8-45/2/acfac830ed036bd52484e2951d6f9c51}, author = {G. Willeke and H. Nussbaumer and H. Bender and E. Bucher} } @proceedings {Wohlgemuth1991, title = {Buried contact concentrator solar cells}, volume = {1}, year = {1991}, note = {
}, pages = {273-277}, author = {Wohlgemuth, J.H. and Narayanan, S.} } @proceedings {Narayanan1990, title = {18\% efficient polycrystalline silicon solar cells}, volume = {1}, year = {1990}, note = {
}, pages = {678-680}, author = {Narayanan, S. and Zolper, J. and Yun, F. and Wenham, S.R. and A. B. Sproul and Chong,C.M. and Martin A Green} } @article {Wang1990, title = {Minority-carrier transport parameters in n-type silicon}, journal = {IEEE Transactions on Electron Devices}, volume = {37}, year = {1990}, note = {
}, pages = {1314 - 1322}, issn = {00189383}, doi = {10.1109/16.108194}, author = {Wang, C.H. and Misiakos, K. and Neugroschel, A.} } @article {Zolper1989, title = {16.7\% efficient, laser textured, buried contact polycrystalline silicon solar cell}, journal = {Applied Physics Letters}, volume = {55}, number = {22}, year = {1989}, pages = {2363}, issn = {00036951}, doi = {10.1063/1.102019}, url = {http://apl.aip.org/applab/v55/i22/p2363_s1}, author = {John C. Zolper and Srinivasamohan Narayanan and Stuart R. Wenham and Martin A Green} } @article {ito1998, title = {Electrical and Optical Properties of Stannite-Type Quaternary Semiconductor Thin Films}, journal = {Japanese Journal of Applied Physics}, volume = {27}, year = {1988}, month = {Aug-11-1989}, pages = {2094 - 2097}, issn = {0021-4922}, doi = {10.1143/JJAP.27.2094}, url = {http://stacks.iop.org/1347-4065/27/2094}, author = {Ito, Kentaro and Nakazawa, Tatsuo} } @article {merz1972, title = {Optical Properties of Substitutional Donors in ZnSe}, journal = {Physical Review B}, volume = {6}, year = {1972}, month = {Jan-07-1972}, pages = {545 - 556}, issn = {0556-2805}, doi = {10.1103/PhysRevB.6.545}, url = {https://link.aps.org/doi/10.1103/PhysRevB.6.545http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.6.545/fulltexthttp://link.aps.org/article/10.1103/PhysRevB.6.545}, author = {Merz, J. L. and Kukimoto, H. and Nassau, K. and Shiever, J. W.} } @article {Furuseth1965, title = {On the Properties of alpha-MnS and MnS2.}, journal = {Acta Chemica Scandinavica}, volume = {19}, year = {1965}, month = {Jan-01-1965}, pages = {1405 - 1410}, issn = {0904-213X}, doi = {10.3891/acta.chem.scand.19-1405}, url = {http://actachemscand.org/doi/10.3891/acta.chem.scand.19-1405}, author = {Furuseth, Sigrid and Kjekshus, Arne and Niklasson, Rune J. V. and Brunvoll, J. and Hinton, Merv} } @article {Nix1939, title = {A Thallous Sulphide Photo EMF Cell}, journal = {Journal Opt. Society of America}, volume = {29}, year = {1939}, note = {
}, pages = {457}, author = {Nix, F.C. and Treptwo, A.W.} }