@article {Nakamura2019Cdfree, title = {Cd-Free Cu(In,Ga)(Se,S)2 Thin-Film Solar Cell With Record Efficiency of 23.35\%}, journal = {IEEE Journal of Photovoltaics}, volume = {9}, year = {2019}, pages = {1863-1867}, doi = {10.1109/JPHOTOV.2019.2937218}, url = {https://ieeexplore-ieee-org.udel.idm.oclc.org/document/8825469/authors$\#$authors}, author = {M. Nakamura and K. Yamaguchi and Y. Kimoto and Y. Yasaki and T. Kato and H. Sugimoto} } @article {Augusto2017, title = {Analysis of the recombination mechanisms of a silicon solar cell with low bandgap-voltage offset}, journal = {Journal of Applied Physics}, volume = {121}, year = {2017}, month = {Apr-05-2019}, pages = {205704}, issn = {0021-8979}, doi = {10.1063/1.4984071}, url = {http://aip.scitation.org/doi/10.1063/1.4984071http://aip.scitation.org/doi/pdf/10.1063/1.4984071http://aip.scitation.org/doi/pdf/10.1063/1.4984071http://aip.scitation.org/doi/am-pdf/10.1063/1.4984071}, author = {Augusto, Andr{\'e} and Herasimenka, Stanislau Y. and King, Richard R. and Bowden, Stuart G. and Honsberg, Christiana} } @article {Hages2016opto, title = {Optoelectronic and material properties of nanocrystal-based \{CZTSe\} absorbers with Ag-alloying}, journal = {Solar Energy Materials and Solar Cells}, volume = {145, Part 3}, year = {2016}, pages = {342 - 348}, abstract = {Abstract In this work, the benefits of Ag-alloying in kesterite solar cells are explored in terms of tunable band gap, improved grain growth, improved minority carrier lifetime, reduced defect formation, and reduced potential fluctuations for (Ag,Cu)2ZnSnSe4 (ACZTSe) absorbers relative to Cu2ZnSnSe4 (CZTSe). The enhanced optoelectronic properties are shown to scale here with the degree of Ag-alloying in ACZTSe. The impacts of these effects on device performance are discussed, with improvement in average device performance/open-circuit voltage reported for \{ACZTSe\} (5\%-Ag) absorbers relative to \{CZTSe\} absorbers with similar band gap. These initial results are promising for the Ag-alloyed \{ACZTSe\} material system as \{VOC\} limitations are the primary cause of poor device performance in kesterite solar cells, and cation substitution presents a unique method to tune the defect properties of kesterite absorbers. Herein, nanoparticle synthesis and large-grain \{ACZTSe\} absorber formation is described followed by material and optoelectronic characterization. Additionally, \{RTP\} processing is presented to achieve fully selenized large-grain chalcogenide absorbers from sulfide nanocrystal inks.}, keywords = {Characterization}, issn = {0927-0248}, doi = {http://dx.doi.org/10.1016/j.solmat.2015.10.039}, url = {http://www.sciencedirect.com/science/article/pii/S0927024815005504}, author = {Charles J. Hages and Mark J. Koeper and Rakesh Agrawal} } @article {Kumar2015, title = {Strategic review of secondary phases, defects and defect-complexes in kesterite CZTS{\textendash}Se solar cells}, journal = {Energy Environ. Sci.}, volume = {8}, year = {2015}, month = {Jan-01-2015}, pages = {3134 - 3159}, issn = {1754-5692}, doi = {10.1039/C5EE02153G}, url = {http://xlink.rsc.org/?DOI=C5EE02153G}, author = {Kumar, Mukesh and Dubey, Ashish and Adhikari, Nirmal and Venkatesan, Swaminathan and Qiao, Qiquan} } @conference {nakamura2014recent, title = {Recent R\&D progress in solar frontier{\textquoteright}s small-sized Cu (InGa)(SeS)2 solar cells}, booktitle = {2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)}, year = {2014}, publisher = {IEEE}, organization = {IEEE}, author = {Nakamura, Motoshi and Yoneyama, Nobutaka and Horiguchi, Kyouhei and Iwata, Yasuaki and Yamaguchi, Koji and Sugimoto, Hiroki and Kato, Takuya} } @article {Emilio2012, title = {MEASURING THE SOLAR RADIUS FROM SPACE DURING THE 2003 AND 2006 MERCURY TRANSITS}, journal = {The Astrophysical Journal}, volume = {750}, year = {2012}, month = {Oct-05-2012}, pages = {135}, issn = {0004-637X}, doi = {10.1088/0004-637X/750/2/135}, url = {http://stacks.iop.org/0004-637X/750/i=2/a=135?key=crossref.05e0b42eda734799131016b454577c66http://stacks.iop.org/0004-637X/750/i=2/a=135/pdf}, author = {Emilio, M. and Kuhn, J. R. and Bush, R. I. and Scholl, I. F.} } @article {Park2011, title = {Effects of electrical contacts on the photoconductive gain of nanowire photodetectors}, journal = {Applied Physics Letters}, volume = {99}, year = {2011}, month = {Jan-01-2011}, pages = {143110}, issn = {00036951}, doi = {10.1063/1.3647559}, url = {http://link.aip.org/link/APPLAB/v99/i14/p143110/s1\&Agg=doi}, author = {Park, Hongsik and Kim, Jin Ho and Beresford, Roderic and Xu, Jimmy} } @article {Kidowaki2011, title = {Fabrication and Characterization of CuO-based Solar Cells}, journal = {Journal of Materials Science Research}, volume = {1}, year = {2011}, month = {May-12-2013}, issn = {1927-0585}, doi = {10.5539/jmsr.v1n1p138}, url = {http://www.ccsenet.org/journal/index.php/jmsr/article/view/14002}, author = {KIDOWAKI, Hiroki and OKU, Takeo and Akiyama, Tsuyoshi and SUZUKI, Atsushi and JEYADEVAN, Balachandran and Cuya, Jhon} } @article {Zwolenski2011, title = {A Theoretical Search for Efficient Dopants in Mg2X (X~=~Si, Ge, Sn) Thermoelectric Materials}, journal = {Journal of Electronic Materials}, volume = {40}, year = {2011}, month = {Jan-05-2011}, pages = {889 - 897}, issn = {0361-5235}, doi = {10.1007/s11664-011-1624-y}, url = {http://link.springer.com/10.1007/s11664-011-1624-yhttp://www.springerlink.com/index/pdf/10.1007/s11664-011-1624-y}, author = {Zwolenski, P. and Tobola, J. and Kaprzyk, S.} } @article {Juhaiman2010, title = {Green synthesis of tunable Cu(In1-xGax)Se2 nanoparticles using non-organic solvents}, journal = {Green Chemistry}, volume = {12}, year = {2010}, month = {Jan-01-2010}, pages = {1248}, issn = {1463-9262}, doi = {10.1039/c001813a}, url = {http://xlink.rsc.org/?DOI=c001813a}, author = {Al Juhaiman, Layla and Scoles, Ludmila and Kingston, David and Patarachao, Bussaraporn and Wang, Dashan and Bensebaa, Farid} } @article {Ranjbar2010, title = {Sonochemical synthesis, characterization and thermal and optical analysis of CuO nanoparticles}, journal = {Physica B: Condensed Matter}, volume = {405}, year = {2010}, month = {Jan-08-2010}, pages = {3096 - 3100}, issn = {09214526}, doi = {10.1016/j.physb.2010.04.021}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0921452610003832}, author = {Ranjbar-Karimi, Reza and Bazmandegan-Shamili, Alireza and Aslani, Alireza and Kaviani, Karim} } @article {Motoyoshi2010, title = {Structure and photovoltaic activity of cupric oxide-based thin film solar cells}, journal = {Journal of the Ceramic Society of Japan}, volume = {118}, year = {2010}, month = {Jan-01-2010}, pages = {1021 - 1023}, issn = {1882-0743}, doi = {10.2109/jcersj2.118.1021}, url = {http://joi.jlc.jst.go.jp/JST.JSTAGE/jcersj2/118.1021?from=CrossRef}, author = {MOTOYOSHI, Ryosuke and OKU, Takeo and KIDOWAKI, Hiroki and SUZUKI, Atsushi and KIKUCHI, Kenji and KIKUCHI, Shiomi and JEYADEVAN, Balachandran} } @proceedings {Takamoto2010, title = {World{\textquoteright}s Highest Efficiency Triple-junction Solar Cells Fabricated by Inverted Layers Transfer Process}, year = {2010}, note = {
}, address = {Honolulu HI, USA}, author = {Takamoto, T. and Agui, T. and Yoshida, A. and Nakaido, K. and Juso, H. and Sasaki, K. and Nakamura, K. and Yamaguchi, H. and Kodama, T. and Washio, H. and Imazumi, M. and Takahashi, M.} } @article {Katagiri2009, title = {Development of CZTS-based thin film solar cells}, journal = {Thin Solid Films}, volume = {517}, year = {2009}, pages = {2455{\textendash}2460}, author = {Hironori Katagiri and Jimbo, Kazuo and Maw, Win Shwe and Oishi, Koichiro and Yamazaki, Makoto and Araki, Hideaki and Takeuchi, Akiko} } @article {steinhagen2009synthesis, title = {Synthesis of Cu2ZnSnS4 nanocrystals for use in low-cost photovoltaics}, journal = {Journal of the American Chemical Society}, volume = {131}, year = {2009}, pages = {12554{\textendash}12555}, author = {Steinhagen, Chet and Panthani, Matthew G and Akhavan, Vahid and Goodfellow, Brian and Koo, Bonil and Korgel, Brian A} } @article {rieder2007, title = {Arsenic in iron disulfides in a brown coal from the North Bohemian Basin, Czech Republic}, journal = {International Journal of Coal Geology}, volume = {71}, year = {2007}, month = {Jan-07-2007}, pages = {115 - 121}, issn = {01665162}, doi = {10.1016/j.coal.2006.07.003}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0166516206001480http://api.elsevier.com/content/article/PII:S0166516206001480?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:S0166516206001480?httpAccept=text/plain}, author = {Rieder, Milan and Crelling, John C. and {\v S}ustai, Ond{\v r}ej and Dr{\'a}bek, Milan and Weiss, Zden{\v e}k and Klementov{\'a}, Mariana} } @article {Park2007, title = {Effects of Copper Oxide/Gold Electrode as the Source-Drain Electrodes in Organic Thin-Film Transistors}, journal = {Electrochemical and Solid-State Letters}, volume = {10}, year = {2007}, month = {Jan-01-2007}, pages = {H340}, issn = {10990062}, doi = {10.1149/1.2774683}, url = {http://esl.ecsdl.org/cgi/doi/10.1149/1.2774683}, author = {Park, Jeong-Woo and Baeg, Kang-Jun and Ghim, Jieun and Kang, Seok-Ju and Park, Jeong-Ho and Kim, Dong-Yu} } @article {Parhizkar2005, title = {Nanocrystalline CuO films prepared by pyrolysis of Cu-arachidate LB multilayers}, journal = {Colloids and Surfaces A: Physicochemical and Engineering Aspects}, volume = {257-258}, year = {2005}, month = {Jan-05-2005}, pages = {277 - 282}, issn = {09277757}, doi = {10.1016/j.colsurfa.2004.10.029}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0927775704007320}, author = {Parhizkar, M. and Singh, Sukhvinder and Nayak, P.K. and Kumar, Nigvendra and Muthe, K.P. and Gupta, S.K. and Srinivasa, R.S. and Talwar, S.S. and Major, S.S.} } @article {Fuyuki2005, title = {Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence}, journal = {Applied Physics Letters}, volume = {86}, number = {26}, year = {2005}, pages = {262108}, publisher = {AIP}, keywords = {carrier lifetime, electroluminescence, elemental semiconductors, MINORITY CARRIERS, SILICON, solar cells}, doi = {10.1063/1.1978979}, url = {http://link.aip.org/link/?APL/86/262108/1}, author = {Takashi Fuyuki and Hayato Kondo and Tsutomu Yamazaki and Yu Takahashi and Yukiharu Uraoka} } @article {Tani2005, title = {Thermoelectric properties of Bi-doped Mg2Si semiconductors}, journal = {Physica B: Condensed Matter}, volume = {364}, year = {2005}, month = {Jan-07-2005}, pages = {218 - 224}, issn = {09214526}, doi = {10.1016/j.physb.2005.04.017}, url = {http://linkinghub.elsevier.com/retrieve/pii/S092145260500709X}, author = {Tani, Jun-ichi and Kido, Hiroyasu} } @article {Henrie2004, title = {Electronic color charts for dielectric films on silicon}, journal = {Optics Express}, volume = {12}, number = {7}, year = {2004}, note = {
}, pages = {1464{\textendash}1469}, abstract = {

This paper presents the calculation of the perceived color of dielectric films on silicon. A procedure is shown for computing the perceived color for an arbitrary light source, light incident angle, and film thickness. The calculated color is converted into {RGB} parameters that can be displayed on a color monitor, resulting in the generation of electronic color charts for dielectric films. This paper shows generated electronic color charts for both silicon dioxide and silicon nitride films on silicon.

}, keywords = {Color, measurement, optical properties, Thin films}, doi = {10.1364/OPEX.12.001464}, url = {http://www.opticsexpress.org/abstract.cfm?URI=oe-12-7-1464}, author = {Justin Henrie and Spencer Kellis and Stephen Schultz and Aaron Hawkins} } @article {Kale2004, title = {Influence of air annealing on the structural, optical and electrical properties of chemically deposited CdSe nano-crystallites}, journal = {Applied Surface Science}, volume = {223}, year = {2004}, month = {Jan-02-2004}, pages = {343 - 351}, issn = {01694332}, doi = {10.1016/j.apsusc.2003.09.022}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0169433203011541}, author = {Kale, R.B and Lokhande, C.D} } @article {Ehm2004, title = {Pressure-induced structural phase transition in the IV{\textendash}VI semiconductor SnS}, journal = {Journal of Physics: Condensed Matter}, volume = {16}, year = {2004}, month = {Feb-06-2004}, pages = {3545 - 3554}, abstract = {The structural behaviour of SnS under high-pressure has been investigated by angular dispersive synchrotron powder diffraction up to 38.5 GPa. A structural phase transition from orthorhombic α-SnS to monoclinic γ-SnS was observed at 18.15 GPa. The fit of a Birch{\textendash}Murnaghan equation-of-state gave the volume at zero pressure of V0 = 192.6(3) {\r A}3, the bulk modulus at zero pressure of B0 = 36.6(9) GPa and the pressure derivative of the bulk modulus B{\textquoteright}=5.5(2) for α-SnS and V0 = 160(1) {\r A}, B0 = 86.0(5) GPa and B{\textquoteright}=4 for γ-SnS. The improper ferro-elastic transition is of first-order and is accompanied by a large volume discontinuity of about 9.1\%. The phase transition can be described in terms of a group/subgroup relationship. The doubling of the unit cell indicates a wavevector (1/2,0,1/2) at the U-point in the Brillouin zone.}, issn = {0953-8984}, doi = {10.1088/0953-8984/16/21/004}, url = {http://stacks.iop.org/0953-8984/16/i=21/a=004?key=crossref.fbc017dcad3d417136827c57d4ea2141}, author = {Ehm, L and Knorr, K and Dera, P and Krimmel, A and Bouvier, P and Mezouar, M} } @article {rudmann2003effects, title = {Effects of NaF coevaporation on structural properties of Cu (In, Ga) Se2 thin films}, journal = {Thin Solid Films}, volume = {431}, year = {2003}, pages = {37{\textendash}40}, author = {Rudmann, D and Bilger, G and Kaelin, M and Haug, F-J and Zogg, H and Tiwari, AN} } @article {Kerr2002, title = {General parameterization of Auger recombination in crystalline silicon}, journal = {Journal of Applied Physics}, volume = {91}, number = {4}, year = {2002}, pages = {2473-2480}, publisher = {AIP}, keywords = {Auger effect, carrier lifetime, electron-hole recombination, elemental semiconductors, SILICON}, doi = {10.1063/1.1432476}, url = {http://link.aip.org/link/?JAP/91/2473/1}, author = {Mark J Kerr and Andr{\'e}s Cuevas} } @article {Kerr2002, title = {Generalized analysis of quasi-steady-state and transient decay open circuit voltage measurements}, journal = {Journal of Applied Physics}, volume = {91}, year = {2002}, note = {
}, month = {2002}, pages = {399}, abstract = {The current{\textendash}voltage characteristics of solar cells and photodiodes can be determined by measuring the open-circuit voltage as a function of a slowly varying light intensity. This article presents a detailed theoretical analysis and interpretation of such quasi-steady-state Voc measurements (QssVoc). The ability of this analysis to accurately obtain the true steady-state device characteristics even in the case of high lifetime, high resistivity silicon devices is demonstrated experimentally. The QssVoc technique can be used to determine the minority carrier lifetime, and the new generalized analysis is required to do this accurately. An important outcome is that solar cell and diode device characteristics can be obtained from measurements of either the photoconductance or the open-circuit voltage, even using transient techniques.}, issn = {00218979}, doi = {10.1063/1.1416134}, author = {Mark J Kerr and Andr{\'e}s Cuevas and Ronald A. Sinton} } @article {altermatt2002, title = {Specifying targets of future research in photovoltaic devices containing pyrite (FeS2) by numerical modelling}, journal = {Solar Energy Materials and Solar Cells}, volume = {71}, year = {2002}, month = {Jan-02-2002}, pages = {181 - 195}, issn = {09270248}, doi = {10.1016/S0927-0248(01)00053-8}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0927024801000538http://api.elsevier.com/content/article/PII:S0927024801000538?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:S0927024801000538?httpAccept=text/plain}, author = {Pietro P Altermatt and Kiesewetter, Tobias and Ellmer, Klaus and Tributsch, Helmut} } @article {Glunz2001, title = {Degradation of carrier lifetime in Cz silicon solar cells}, journal = {Solar Energy Materials and Solar Cells}, volume = {65}, number = {1-4}, year = {2001}, note = {
}, pages = {219 - 229}, keywords = {Defects}, issn = {0927-0248}, doi = {DOI: 10.1016/S0927-0248(00)00098-2}, url = {http://www.sciencedirect.com/science/article/B6V51-419BGN3-11/2/7ba9d473113c89089b6e79c1cd46775f}, author = {Stefan W. Glunz and S. Rein and W. Warta and J. Knobloch and W. Wettling} } @proceedings {Keogh2001, title = {Natural Sunlight Calibration of Silicon Solar Cells.}, year = {2001}, note = {
}, address = {Munich, Germany}, author = {W. Keogh and Andrew W Blakers} } @article {Schmidt2000, title = {Coulomb-enhanced Auger recombination in crystalline silicon at intermediate and high injection densities}, journal = {Journal of Applied Physics}, volume = {88}, number = {3}, year = {2000}, pages = {1494-1497}, publisher = {AIP}, keywords = {Auger effect, carrier lifetime, electron-hole recombination, elemental semiconductors, photoconductivity, SILICON}, doi = {10.1063/1.373878}, url = {http://link.aip.org/link/?JAP/88/1494/1}, author = {Jan Schmidt and Mark J Kerr and Pietro P Altermatt} } @article {Yoon2000, title = {Photoelectrochemical properties of copper oxide thin films coated on an n-Si substrate}, journal = {Thin Solid Films}, volume = {372}, year = {2000}, pages = {250 - 256}, abstract = {The photoelectrochemical properties of the copper oxide thin film coated on the n-type silicon electrode were investigated as a function of film deposition temperature. The variation in the deposition temperature affected the film morphology and the ratio of copper to oxygen. In case of the films deposited below 200{\textdegree}C, the main phase was found to be CuO while the amount of the Cu2O phase increased with further increases in deposition temperature. The n-silicon photoelectrode showed enhanced photocurrent{\textendash}potential (I{\textendash}V) properties by forming a copper oxide/n-silicon heterojunction. In particular, the electrode, which mainly consisted of a CuO phase, showed better photoelectrochemical conversion efficiencies compared to the Cu2O phase. This result was explained in terms of the electrical conductance and transmittance of the copper oxide film.}, keywords = {XPS}, issn = {0040-6090}, doi = {http://dx.doi.org/10.1016/S0040-6090(00)01058-0}, url = {http://www.sciencedirect.com/science/article/pii/S0040609000010580}, author = {Ki Hyun Yoon and Woo Jin Choi and Dong Heon Kang} } @article {rockett1999incorporation, title = {Na incorporation in Mo and CuInSe2 from production processes}, journal = {Solar energy materials and solar cells}, volume = {59}, year = {1999}, pages = {255{\textendash}264}, author = {Rockett, Angus and Granath, Karin and Asher, S and Al Jassim, MM and Hasoon, F and Matson, R and Basol, B and Kapur, V and Britt, JS and Gillespie, T and others} } @article {thomas1999, title = {Photoeffects in cobalt doped pyrite (FeS 2 ) films}, journal = {Solid State Communications}, volume = {111}, year = {1999}, month = {Jan-07-1999}, pages = {235 - 240}, issn = {00381098}, doi = {10.1016/S0038-1098(99)00213-6}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0038109899002136http://api.elsevier.com/content/article/PII:S0038109899002136?httpAccept=text/plainhttp://api.elsevier.com/content/article/PII:S0038109899002136?httpAccept=text/xml}, author = {Thomas, B. and Ellmer, K. and Bohne, W. and R{\"o}hrich, J. and Kunst, M. and Tributsch, H.} } @article {Katagiri1997, title = {Preparation and evaluation of Cu2ZnSnS4 thin films by sulfurization of E-B evaporated precursors}, journal = {Solar Energy Materials and Solar Cells}, volume = {49}, year = {1997}, pages = {407 - 414}, abstract = {By sulfurization of EB evaporated precursors, CZTS(Cu2ZnSnS4) films could be prepared successfully. This semiconductor does not consist of any rare-metal such as In. The X-ray diffraction pattern of CZTS thin films showed that these films had a stannite structure. This study estimated the optical band gap energy as 1.45 eV. The optical absorption coefficient was in the order of 104cm-1. The resistivity was in the the order of 104 Ω cm and the conduction type was p-type. Fabricated solar cells, Al/ZnO/CdS/CZTS/Mo/Soda Lime Glass, showed an open-circuit voltage up to 400 mV.}, keywords = {EB evaporated precursors}, issn = {0927-0248}, doi = {http://dx.doi.org/10.1016/S0927-0248(97)00119-0}, url = {http://www.sciencedirect.com/science/article/pii/S0927024897001190}, author = {Hironori Katagiri and Nobuyuki Sasaguchi and Shima Hando and Suguro Hoshino and Jiro Ohashi and Takaharu Yokota} } @article {Green1995, title = {Optical properties of intrinsic silicon at 300 K}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {3}, year = {1995}, note = {
}, month = {1995}, pages = {189 - 192}, issn = {1099159X}, doi = {10.1002/pip.4670030303}, author = {Martin A Green and Keevers, Mark J.} } @article {Kerr1995, title = {Sun{\textquoteright}s Role in Warming Is Discounted}, journal = {Science}, volume = {268}, year = {1995}, note = {
}, month = {04/1995}, pages = {28 - 29}, issn = {1095-9203}, doi = {10.1126/science.268.5207.28}, author = {Kerr, R. A.} } @article {Knight2003, title = {The crystal structures of CuInSe2 and CuInTe2}, journal = {Materials Research Bulletin}, volume = {27}, year = {1992}, month = {Jan-02-1992}, pages = {161 - 167}, issn = {00255408}, doi = {10.1016/0025-5408(92)90209-I}, url = {http://linkinghub.elsevier.com/retrieve/pii/002554089290209Ihttp://api.elsevier.com/content/article/PII:002554089290209I?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:002554089290209I?httpAccept=text/plain}, author = {Knight, K.S.} } @proceedings {King1991, title = {A Sensitivity Analysis of the Spectral Mismatch Correction Procedure Using Wavelength-Dependent Error Sources}, year = {1991}, note = {
}, author = {King, D. and Hansen, B.} } @article {Kasten89, title = {Revised optical air mass tables and approximation formula}, journal = {Applied Optics}, volume = {28}, number = {22}, year = {1989}, note = {
}, month = {11/1989}, pages = {4735{\textendash}4738}, publisher = {OSA}, doi = {10.1364/AO.28.004735}, url = {http://ao.osa.org/abstract.cfm?URI=ao-28-22-4735}, author = {Fritz Kasten and Andrew T. Young} } @article {Mialhe1986, title = {The diode quality factor of solar cells under illumination}, journal = {Journal of Physics D: Applied Physics}, volume = {19}, year = {1986}, month = {Feb-03-1987}, pages = {483 - 492}, abstract = {A review of the methods of determination of solar cell quality factors is discussed from a theoretical point of view; experimental results are compared. Temperature effects, light and bias dependencies of the parameters and the models are considered in order to specify the limits of application of each method. }, issn = {0022-3727}, doi = {10.1088/0022-3727/19/3/018}, url = {https://iopscience.iop.org/article/10.1088/0022-3727/19/3/018http://stacks.iop.org/0022-3727/19/i=3/a=018/pdf}, author = {Mialhe, P and Charles, J P and Khoury, A and Bordure, G} } @article {Irie1979, title = {Electrical Properties of p- and n-Type CuInSe 2 Single Crystals}, journal = {Japanese Journal of Applied Physics}, volume = {18}, year = {1979}, month = {Jan-07-1979}, pages = {1303 - 1310}, issn = {0021-4922}, doi = {10.1143/JJAP.18.1303}, url = {http://jjap.jsap.jp/link?JJAP/18/1303/}, author = {Irie, Taizo and Endo, Saburo and Kimura, Shigeo} } @article {Logothetis1979, title = {Hall coefficient and reflectivity evidence that TiS 2 is a semiconductor}, journal = {Journal of Physics C: Solid State Physics}, volume = {12}, year = {1979}, pages = {L521}, abstract = {A series of measurements of the Hall coefficient, infrared reflectivity, thermoelectric power and electrical resistivity of Ti 1+x S 2 single crystals with various degrees of stoichiometry is described, where, for the first time, each measurement was made on the same crystal (or crystals from the same batch). None of these measurements taken alone can distinguish between the semimetallic or semiconducting models of TiS 2 . However, by making all four measurements on each sample, it has been possible to establish correlations between the results for different samples. It was found that the product of the Hall coefficient and the square of the plasma frequency is the same for all samples, a result that is consistent with a semiconductor model, but is inconsistent with a semimetal. Nevertheless the most stoichiometric samples remain metallic with electron concentrations of 2*10 20 cm -3 . It was also found that the resistivity data cannot be explained by carrier-carrier or optical phonon scattering. Therefore, both the source of the residual conduction electrons and the scattering mechanism in TiS 2 remain unknown.}, url = {http://stacks.iop.org/0022-3719/12/i=13/a=007}, author = {E M Logothetis and W J Kaiser and C A Kukkonen and S P Faile and R Colella and J Gambold} } @article {Logothetis1979a, title = {Hall coefficient and reflectivity evidence that TiS 2 is a semiconductor}, journal = {Journal of Physics C: Solid State Physics}, volume = {12}, year = {1979}, month = {Feb-07-1980}, pages = {L521 - L526}, issn = {0022-3719}, doi = {10.1088/0022-3719/12/13/007}, url = {http://stacks.iop.org/0022-3719/12/i=13/a=007?key=crossref.7b34e84721f0d96f60dce7c3e44ba4c7}, author = {Logothetis, E M and W J Kaiser and Kukkonen, C A and S P Faile and Colella, R and J Gambold} } @article {wagner1974cuinse2, title = {CuInSe2/CdS heterojunction photovoltaic detectors}, journal = {Applied Physics Letters}, volume = {25}, year = {1974}, pages = {434{\textendash}435}, author = {Wagner, Sigurd and Shay, JL and Migliorato, P and Kasper, HM} } @article {Green1974, title = {Minority carrier MIS tunnel diodes and their application to electron- and photo-voltaic energy conversion{\textemdash}I. Theory}, journal = {Solid-State Electronics}, volume = {17}, year = {1974}, month = {Jan-06-1974}, pages = {551 - 561}, abstract = {If the insulating layer in a metal-insulator-semiconductor (MIS) diode is very thin (\<60 {\r A} for AlSiO2Si), measureable tunnel current can flow between the metal and the semiconductor. If the insulating layer is even thinner (\<30 {\r A}), tunnel currents are so large that they can significantly disturb the semiconductor from thermal equilibrium. Under such conditions, MIS diodes exhibit properties determined by which of the following tunneling processes is dominant; tunneling between the metal and the majority carrier energy band in the semiconductor, between the metal and the minority carrier energy band, or between the metal abd surface state levels. In the present paper, minority carrier MIS tunnel diodes are analysed using a very general formulation of the tunneling processes through the insulator, transport properties in the semiconductor, and surface state effects. Starting from solutions for diodes with relatively thick insulating layers where the semiconductor is essentially in thermal equilibrium, solutions are obtained for progressively thinner insulating layers until non-equilibrium effects in the semiconductor are observed. It is shown that such minority carrier MIS tunnel diodes with very thin insulating layers possess properties similar to p-n junction diodes including exponential current-voltage characteristics which approach the {\textquotedblleft}ideal diode{\textquotedblright} law of p-n junction theory. The theory adequately describes the observed properties of experimental devices reported in a companion paper. The diodes have application as injecting contacts, as photodiodes or elements of photodiode arrays, and as energy conversion devices employing the electron- or photo-voltaic effects.}, issn = {00381101}, doi = {10.1016/0038-1101(74)90172-5}, url = {http://linkinghub.elsevier.com/retrieve/pii/0038110174901725http://api.elsevier.com/content/article/PII:0038110174901725?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:0038110174901725?httpAccept=text/plain}, author = {Green, M.A. and King, F.D. and Shewchun, J.} } @article {merz1972, title = {Optical Properties of Substitutional Donors in ZnSe}, journal = {Physical Review B}, volume = {6}, year = {1972}, month = {Jan-07-1972}, pages = {545 - 556}, issn = {0556-2805}, doi = {10.1103/PhysRevB.6.545}, url = {https://link.aps.org/doi/10.1103/PhysRevB.6.545http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.6.545/fulltexthttp://link.aps.org/article/10.1103/PhysRevB.6.545}, author = {Merz, J. L. and Kukimoto, H. and Nassau, K. and Shiever, J. W.} } @article {Furuseth1965, title = {On the Properties of alpha-MnS and MnS2.}, journal = {Acta Chemica Scandinavica}, volume = {19}, year = {1965}, month = {Jan-01-1965}, pages = {1405 - 1410}, issn = {0904-213X}, doi = {10.3891/acta.chem.scand.19-1405}, url = {http://actachemscand.org/doi/10.3891/acta.chem.scand.19-1405}, author = {Furuseth, Sigrid and Kjekshus, Arne and Niklasson, Rune J. V. and Brunvoll, J. and Hinton, Merv} } @article {Kingsbury1952, title = {Photoelectric Properties of Tonically Bombarded Silicon}, journal = {Bell Systems Technical Journal}, volume = {31}, year = {1952}, note = {
}, pages = {802-815}, author = {Kingsbury, E.F. and Ohl, R.S.} }