@article {Augusto2017, title = {Analysis of the recombination mechanisms of a silicon solar cell with low bandgap-voltage offset}, journal = {Journal of Applied Physics}, volume = {121}, year = {2017}, month = {Apr-05-2019}, pages = {205704}, issn = {0021-8979}, doi = {10.1063/1.4984071}, url = {http://aip.scitation.org/doi/10.1063/1.4984071http://aip.scitation.org/doi/pdf/10.1063/1.4984071http://aip.scitation.org/doi/pdf/10.1063/1.4984071http://aip.scitation.org/doi/am-pdf/10.1063/1.4984071}, author = {Augusto, Andr{\'e} and Herasimenka, Stanislau Y. and King, Richard R. and Bowden, Stuart G. and Honsberg, Christiana} } @article {feurer2017progress, title = {Progress in thin film CIGS photovoltaics{\textendash}Research and development, manufacturing, and applications}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {25}, year = {2017}, pages = {645{\textendash}667}, author = {Feurer, Thomas and Reinhard, Patrick and Avancini, Enrico and Bissig, Benjamin and L{\"o}ckinger, Johannes and Fuchs, Peter and Carron, Romain and Weiss, Thomas Paul and Perrenoud, Julian and Stutterheim, Stephan and Buecheler, Stephan and Tiwari, Ayodhya N.} } @article {Hages2016, title = {Generalized quantum efficiency analysis for non-ideal solar cells: Case of Cu 2 ZnSnSe 4}, journal = {Journal of Applied Physics}, volume = {119}, year = {2016}, month = {Jul-01-2016}, pages = {014505}, issn = {0021-8979}, doi = {10.1063/1.4939487}, url = {http://aip.scitation.org/doi/10.1063/1.4939487http://aip.scitation.org/doi/pdf/10.1063/1.4939487}, author = {Charles J. Hages and Carter, Nathaniel J. and Rakesh Agrawal} } @article {Hages2016opto, title = {Optoelectronic and material properties of nanocrystal-based \{CZTSe\} absorbers with Ag-alloying}, journal = {Solar Energy Materials and Solar Cells}, volume = {145, Part 3}, year = {2016}, pages = {342 - 348}, abstract = {Abstract In this work, the benefits of Ag-alloying in kesterite solar cells are explored in terms of tunable band gap, improved grain growth, improved minority carrier lifetime, reduced defect formation, and reduced potential fluctuations for (Ag,Cu)2ZnSnSe4 (ACZTSe) absorbers relative to Cu2ZnSnSe4 (CZTSe). The enhanced optoelectronic properties are shown to scale here with the degree of Ag-alloying in ACZTSe. The impacts of these effects on device performance are discussed, with improvement in average device performance/open-circuit voltage reported for \{ACZTSe\} (5\%-Ag) absorbers relative to \{CZTSe\} absorbers with similar band gap. These initial results are promising for the Ag-alloyed \{ACZTSe\} material system as \{VOC\} limitations are the primary cause of poor device performance in kesterite solar cells, and cation substitution presents a unique method to tune the defect properties of kesterite absorbers. Herein, nanoparticle synthesis and large-grain \{ACZTSe\} absorber formation is described followed by material and optoelectronic characterization. Additionally, \{RTP\} processing is presented to achieve fully selenized large-grain chalcogenide absorbers from sulfide nanocrystal inks.}, keywords = {Characterization}, issn = {0927-0248}, doi = {http://dx.doi.org/10.1016/j.solmat.2015.10.039}, url = {http://www.sciencedirect.com/science/article/pii/S0927024815005504}, author = {Charles J. Hages and Mark J. Koeper and Rakesh Agrawal} } @article {Kumar2015, title = {Strategic review of secondary phases, defects and defect-complexes in kesterite CZTS{\textendash}Se solar cells}, journal = {Energy Environ. Sci.}, volume = {8}, year = {2015}, month = {Jan-01-2015}, pages = {3134 - 3159}, issn = {1754-5692}, doi = {10.1039/C5EE02153G}, url = {http://xlink.rsc.org/?DOI=C5EE02153G}, author = {Kumar, Mukesh and Dubey, Ashish and Adhikari, Nirmal and Venkatesan, Swaminathan and Qiao, Qiquan} } @article {Kidowaki2011, title = {Fabrication and Characterization of CuO-based Solar Cells}, journal = {Journal of Materials Science Research}, volume = {1}, year = {2011}, month = {May-12-2013}, issn = {1927-0585}, doi = {10.5539/jmsr.v1n1p138}, url = {http://www.ccsenet.org/journal/index.php/jmsr/article/view/14002}, author = {KIDOWAKI, Hiroki and OKU, Takeo and Akiyama, Tsuyoshi and SUZUKI, Atsushi and JEYADEVAN, Balachandran and Cuya, Jhon} } @article {Ranjbar2010, title = {Sonochemical synthesis, characterization and thermal and optical analysis of CuO nanoparticles}, journal = {Physica B: Condensed Matter}, volume = {405}, year = {2010}, month = {Jan-08-2010}, pages = {3096 - 3100}, issn = {09214526}, doi = {10.1016/j.physb.2010.04.021}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0921452610003832}, author = {Ranjbar-Karimi, Reza and Bazmandegan-Shamili, Alireza and Aslani, Alireza and Kaviani, Karim} } @proceedings {Takamoto2010, title = {World{\textquoteright}s Highest Efficiency Triple-junction Solar Cells Fabricated by Inverted Layers Transfer Process}, year = {2010}, note = {
}, address = {Honolulu HI, USA}, author = {Takamoto, T. and Agui, T. and Yoshida, A. and Nakaido, K. and Juso, H. and Sasaki, K. and Nakamura, K. and Yamaguchi, H. and Kodama, T. and Washio, H. and Imazumi, M. and Takahashi, M.} } @article {Katagiri2009, title = {Development of CZTS-based thin film solar cells}, journal = {Thin Solid Films}, volume = {517}, year = {2009}, pages = {2455{\textendash}2460}, author = {Hironori Katagiri and Jimbo, Kazuo and Maw, Win Shwe and Oishi, Koichiro and Yamazaki, Makoto and Araki, Hideaki and Takeuchi, Akiko} } @article {wadia2009, title = {Surfactant-Assisted Hydrothermal Synthesis of Single phase Pyrite FeS 2 Nanocrystals}, journal = {Chemistry of Materials}, volume = {21}, year = {2009}, month = {Feb-07-2010}, pages = {2568 - 2570}, issn = {0897-4756}, doi = {10.1021/cm901273v}, url = {http://pubs.acs.org/doi/abs/10.1021/cm901273vhttp://pubs.acs.org/doi/pdf/10.1021/cm901273v}, author = {Wadia, Cyrus and Wu, Yue and Gul, Sheraz and Volkman, Steven K. and Guo, Jinghua and Alivisatos, A. Paul} } @article {steinhagen2009synthesis, title = {Synthesis of Cu2ZnSnS4 nanocrystals for use in low-cost photovoltaics}, journal = {Journal of the American Chemical Society}, volume = {131}, year = {2009}, pages = {12554{\textendash}12555}, author = {Steinhagen, Chet and Panthani, Matthew G and Akhavan, Vahid and Goodfellow, Brian and Koo, Bonil and Korgel, Brian A} } @article {Guo2009, title = {Synthesis of Cu2ZnSnS4 Nanocrystal Ink and Its Use for Solar Cells}, journal = {Journal of the American Chemical Society}, volume = {131}, year = {2009}, month = {Feb-08-2011}, pages = {11672 - 11673}, issn = {0002-7863}, doi = {10.1021/ja904981r}, url = {http://pubs.acs.org/doi/abs/10.1021/ja904981rhttp://pubs.acs.org/doi/pdf/10.1021/ja904981r}, author = {Guo, Qijie and Hillhouse, Hugh W. and Rakesh Agrawal} } @article {Avellaneda2008, title = {Polymorphic Tin Sulfide Thin Films of Zinc Blende and Orthorhombic Structures by Chemical Deposition}, journal = {Journal of The Electrochemical Society}, volume = {155}, year = {2008}, month = {Jan-01-2008}, pages = {D517}, abstract = {Polycrystalline thin films (100{\textendash}450nm in thickness) of SnS formed from chemical baths of Sn(II) in acetic acid/HCl solution, triethanolamine, NH3 (aq), and thioacetamide are polymorphic consisting of zinc blende (ZB) and orthorhombic (OR) structures. The ZB structure for the SnS film, reported in this work for the first time, has a lattice constant a=0.579nm and a direct (forbidden) bandgap of 1.7eV , which is distinct from that of SnS(ZB) , about 1eV . The electrical conductivity of SnS(ZB) is 6{\texttimes}10-6 (Ωcm)-1 p-type, with activation energies for the conductivity of 0.5eV at room temperature and 1.6meV near 10K . When a SnS(ZB) film is heated in air at 500{\textdegree}C for 30min , part of it transforms to SnO2 and to SnS(OR) ; after 2h 30min at 550{\textdegree}C in air the film converts to transparent SnO2 . Such a film has a bandgap of 3.7eV and electrical conductivity, \~{}1 (Ωcm)-1 . Photovoltaic effect in different structures involving these films is presented. }, issn = {00134651}, doi = {10.1149/1.2917198}, url = {http://jes.ecsdl.org/cgi/doi/10.1149/1.2917198}, author = {Avellaneda, David and Nair, M. T. S. and Nair, P. K.} } @article {Atanassov2007, title = {On the band diagram of Mg2Si/Si heterojunction as deduced from optical constants dispersions}, journal = {Thin Solid Films}, volume = {515}, year = {2007}, month = {Jan-01-2007}, pages = {3046 - 3051}, issn = {00406090}, doi = {10.1016/j.tsf.2006.08.015}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0040609006010054}, author = {Atanassov, A. and Baleva, M.} } @article {Mette2007, title = {Series resistance characterization of industrial silicon solar cells with screen-printed contacts using hotmelt paste}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {15}, year = {2007}, note = {
}, pages = {493-505}, author = {A. Mette and et al} } @article {Sato2005, title = {Characterization of electrical properties and photosensitivity of SnS thin films prepared by the electrochemical deposition method}, journal = {Solar Energy Materials and Solar Cells}, volume = {85}, year = {2005}, month = {Jan-01-2005}, pages = {153 - 165}, abstract = {Using the electrochemical deposition (ECD) method, we prepared tin sulfide thin films, which are suitable for the absorption layer in solar cells because of its bandgap energy (\~{}1 eV). We first optimized pulse-form biasing for ECD by characterizing deposited samples with scanning electron microscope, Auger electron spectroscopy and X-ray diffraction measurements. Then, we investigated the electrical properties of deposited SnS thin films and the properties of contacts with several different metals. Furthermore, we observed the photoconductivity of the films by means of photoelectrochemical measurements. From these results, we confirmed that the SnS thin films show p-type conduction.}, issn = {09270248}, doi = {10.1016/j.solmat.2004.04.014}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0927024804002077http://api.elsevier.com/content/article/PII:S0927024804002077?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:S0927024804002077?httpAccept=text/plain}, author = {Sato, Naoya and Ichimura, Masaya and Arai, Eisuke and Yamazaki, Yoshihisa} } @article {Benhelal2005, title = {First-principles calculations of the structural, electronic and optical properties of IIA-IV antifluorite compounds}, journal = {physica status solidi (b)}, volume = {242}, year = {2005}, month = {Jan-08-2005}, pages = {2022 - 2032}, issn = {0370-1972}, doi = {10.1002/(ISSN)1521-395110.1002/pssb.v242:1010.1002/pssb.200540063}, url = {http://doi.wiley.com/10.1002/\%28ISSN\%291521-3951http://doi.wiley.com/10.1002/pssb.v242:10http://doi.wiley.com/10.1002/pssb.200540063}, author = {Benhelal, O. and Chahed, A. and Laksari, S. and Abbar, B. and Bouhafs, B. and Aourag, H.} } @article {Anandan2005, title = {Room temperature growth of CuO nanorod arrays on copper and their application as a cathode in dye-sensitized solar cells}, journal = {Materials Chemistry and Physics}, volume = {93}, year = {2005}, month = {Jan-09-2005}, pages = {35 - 40}, issn = {02540584}, doi = {10.1016/j.matchemphys.2005.02.002}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0254058405001197}, author = {Anandan, Sambandam and Wen, Xiaogang and Yang, Shihe} } @proceedings {Honsberg2003, title = {Dependence of aluminium alloying on solar cell processing conditions}, year = {2003}, note = {
}, author = {Christiana B Honsberg and Anwar, K.K. and Mehrvarz, H.R. and Cotter, J.E. and Wenham, S.R.} } @article {Altermatt2003, title = {Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing}, journal = {Journal of Applied Physics}, volume = {93}, year = {2003}, month = {Jan-01-2003}, pages = {1598}, abstract = {The commonly used value of the intrinsic carrier density of crystalline silicon at 300 K is ni=1.00{\texttimes}1010 cm-3. It was experimentally determined by Sproul and Green, J. Appl. Phys. 70, 846 (1991), using specially designed solar cells. In this article, we demonstrate that the Sproul and Green experiment was influenced by band-gap narrowing, even though the dopant density of their samples was low (1014 to 1016 cm-3). We reinterpret their measurements by numerical simulations with a random-phase approximation model for band-gap narrowing, thereby obtaining ni=9.65{\texttimes}109 cm-3 at 300 K. This value is consistent with results obtained by Misiakos and Tsamakis, J. Appl. Phys. 74, 3293 (1993), using capacitance measurements. In this way, long-prevailing inconsistencies between independent measurement techniques for the determination of ni are resolved.}, issn = {00218979}, doi = {10.1063/1.1529297}, author = {Pietro P Altermatt and Schenk, Andreas and Geelhaar, Frank and Heiser, Gernot} } @article {Reda2003, title = {Solar Position Algorithm for Solar Radiation Applications}, number = {TP-560-34302, R}, year = {2003}, note = {
}, month = {2003}, author = {Reda, I and Andreas, A} } @article {altermatt2002, title = {Specifying targets of future research in photovoltaic devices containing pyrite (FeS2) by numerical modelling}, journal = {Solar Energy Materials and Solar Cells}, volume = {71}, year = {2002}, month = {Jan-02-2002}, pages = {181 - 195}, issn = {09270248}, doi = {10.1016/S0927-0248(01)00053-8}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0927024801000538http://api.elsevier.com/content/article/PII:S0927024801000538?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:S0927024801000538?httpAccept=text/plain}, author = {Pietro P Altermatt and Kiesewetter, Tobias and Ellmer, Klaus and Tributsch, Helmut} } @article {Blanco2001, title = {Computing the solar vector}, journal = {Solar Energy}, volume = {70}, year = {2001}, month = {Jan-01-2001}, pages = {431 - 441}, issn = {0038092X}, doi = {10.1016/S0038-092X(00)00156-0}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0038092X00001560http://api.elsevier.com/content/article/PII:S0038092X00001560?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:S0038092X00001560?httpAccept=text/plain}, author = {Blanco-Muriel, Manuel and Alarc{\'o}n-Padilla, Diego C. and L{\'o}pez-Moratalla, Teodoro and Lara-Coira, Mart{\'I}n} } @article {BlancoMuriel2001, title = {Computing the solar vector}, journal = {Solar Energy}, volume = {70}, number = {5}, year = {2001}, note = {
}, pages = {431 - 441}, keywords = {Solar tracking}, issn = {0038-092X}, doi = {DOI: 10.1016/S0038-092X(00)00156-0}, url = {http://www.sciencedirect.com/science/article/B6V50-42G6KWJ-5/2/a61a5c50128325f281ca2e33e01de993}, author = {Manuel Blanco-Muriel and Diego C. Alarc{\'o}n-Padilla and Teodoro L{\'o}pez-Moratalla and Mart{\'I}n Lara-Coira} } @article {Altermatt2001, title = {Improvements in numerical modelling of highly injected crystalline silicon solar cells}, journal = {Solar Energy Materials and Solar Cells}, volume = {65}, year = {2001}, pages = {149-155(7)}, abstract = {

We numerically model crystalline silicon concentrator cells with the inclusion of band gap narrowing (BGN) caused by injected free carriers. In previous studies, the revised room-temperature value of the intrinsic carrier density, ni=1.00x1010cm-3, was inconsistent with the other material parameters of highly injected silicon. In this paper, we show that high-injection experiments can be described consistently with the revised value of ni if free-carrier induced BGN is included, and that such BGN is an important effect in silicon concentrator cells. The new model presented here significantly improves the ability to model highly injected silicon cells with a high level of precision.

}, url = {http://www.ingentaconnect.com/content/els/09270248/2001/00000065/00000001/art00089" doi = "doi:10.1016/S0927-0248(00)00089-1}, author = {Pietro P Altermatt and Sinton, R.A. and G. Heiser} } @mastersthesis {Anwar2000, title = {Aluminium Back Surface Field in Buried Contact Solar Cells}, volume = {Bachelor of Engineering}, year = {2000}, note = {
}, school = {University of New South Wales}, type = {masters}, author = {Anwar, K.K.} } @article {Schmidt2000, title = {Coulomb-enhanced Auger recombination in crystalline silicon at intermediate and high injection densities}, journal = {Journal of Applied Physics}, volume = {88}, number = {3}, year = {2000}, pages = {1494-1497}, publisher = {AIP}, keywords = {Auger effect, carrier lifetime, electron-hole recombination, elemental semiconductors, photoconductivity, SILICON}, doi = {10.1063/1.373878}, url = {http://link.aip.org/link/?JAP/88/1494/1}, author = {Jan Schmidt and Mark J Kerr and Pietro P Altermatt} } @proceedings {vanderHeide2000, title = {Mapping of contact resistance and locating shunts on solar cells using Resistance Analysis by Mapping of Potential (RAMP) techniques}, year = {2000}, note = {
}, pages = {1438}, address = {Glasgow (United Kingdom)}, author = {A.S.H. van der Heide and et al} } @conference {Corkish2000, title = {Simulating Electron-Beam-Induced Current Profiles Across p-n Junctions}, booktitle = {Proceedings of the 16h European Solar Energy Conference}, year = {2000}, note = {
}, month = {1-5 May 2000}, pages = {1590-1593}, publisher = {James and James}, organization = {James and James}, address = {Glasgow UK}, isbn = {9781902916187}, author = {R. Corkish and Luke, K. L. and Pietro P Altermatt and G. Heiser} } @proceedings {Corkish2000, title = {Simulating Electron-Beam-Induced Current Profiles Across p-n Junctions}, year = {2000}, note = {
}, pages = {1590-1593}, author = {R. Corkish and Luke, K. L. and Pietro P Altermatt and G. Heiser} } @article {Nagel1999, title = {Generalized analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductors}, journal = {Journal of Applied Physics}, volume = {86}, number = {11}, year = {1999}, pages = {6218-6221}, publisher = {AIP}, keywords = {carrier lifetime, photoconductivity}, doi = {10.1063/1.371633}, url = {http://link.aip.org/link/?JAP/86/6218/1}, author = {Henning Nagel and Christopher Berge and Armin G Aberle} } @article {rockett1999incorporation, title = {Na incorporation in Mo and CuInSe2 from production processes}, journal = {Solar energy materials and solar cells}, volume = {59}, year = {1999}, pages = {255{\textendash}264}, author = {Rockett, Angus and Granath, Karin and Asher, S and Al Jassim, MM and Hasoon, F and Matson, R and Basol, B and Kapur, V and Britt, JS and Gillespie, T and others} } @article {Robinson1994, title = {Departures from the principle of superposition in silicon solar cells}, journal = {Journal of Applied Physics}, volume = {76}, year = {1994}, note = {
}, month = {1994}, pages = {7920}, issn = {00218979}, doi = {10.1063/1.357902}, author = {Robinson, S. J. and Armin G Aberle and Martin A Green} } @conference {Aberle1993, title = {A New Method for the Accurate Measurements of the Lumped Series Resistance of Solar Cells}, booktitle = {Proceedings of the 23rd IEEE Photovoltaic Specialists Conference}, year = {1993}, address = {Louisville, KY}, author = {Armin G Aberle and Wenham, S.R. and Martin A Green} } @proceedings {Zhao1991, title = {Improvements in Silicon Solar Cell Performance}, year = {1991}, note = {
}, pages = {399-402}, author = {Zhao, J. and Wang A. and Dai, X. and Martin A Green and Wenham, S.R.} } @article {adachi1991, title = {Optical properties of ZnSe}, journal = {Physical Review B}, volume = {43}, year = {1991}, month = {Jan-04-1991}, pages = {9569 - 9577}, issn = {0163-1829}, doi = {10.1103/PhysRevB.43.9569}, url = {https://link.aps.org/doi/10.1103/PhysRevB.43.9569http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.43.9569/fulltexthttp://link.aps.org/article/10.1103/PhysRevB.43.9569}, author = {Adachi, Sadao and Taguchi, Tsunemasa} } @article {531, title = {High Electron Mobility in Zinc Selenide Through Low-Temperature Annealing}, journal = {Journal of Applied Physics}, volume = {42}, year = {1971}, month = {Jan-01-1971}, pages = {1204}, abstract = {Electron mobility in ZnSe has been measured between 40{\textdegree} and 400{\textdegree}K. It is shown that through repeated annealing in liquid Zn the mobility maximum can be increased to 12 000 cm2/V sec. This is one of the highest mobilities measured for semiconductors with band gaps as wide as that of ZnSe (2.7 eV). The increase in mobility is mainly due to elimination of doubly charged acceptor states. The residual scattering is believed to be due, in part, to charged isolated impurities and, in part, to paired impurity dipoles.}, issn = {00218979}, doi = {10.1063/1.1660167}, author = {Aven, M.} } @article {Auger1923, title = {Sur les rayons \β secondaires produits dans un gaz par des rayons X}, journal = {C.R.A.S.}, volume = {177}, year = {1923}, note = {
}, pages = {169-171}, author = {P. Auger} } @article {Adams1877, title = {The Action of Light on Selenium}, journal = {Proceedings of the Royal Society, London}, volume = {A25}, year = {1877}, note = {
}, pages = {113}, author = {Adams, W.G. and Day, R.E.} }