@article {Yang2013,
	title = {Development of high-performance multicrystalline silicon for photovoltaic industry},
	journal = {Progress in Photovoltaics: Research and Applications},
	volume = {23},
	year = {2015},
	month = {Jan-03-2015},
	pages = {340 - 351},
	abstract = {The low cost and high quality of multicrystalline silicon (mc-Si) based on directional solidification has become the main stream in photovoltaic (PV) industry. The mc-Si quality affects directly the conversion efficiency of solar cells, and thus, it is crucial to the cost of PV electricity. With the breakthrough of crystal growth technology, the so-called high-performance mc-Si has increased about 1\% in solar cell efficiency from 16.6\% in 2011 to 17.6\% in 2012 based on the whole ingot performance. In this paper, we report our development of this high-performance mc-Si. The key ideas behind this technology for defect control are discussed. With the high-performance mc-Si, we have achieved an average efficiency of near 17.8\% and an open-circuit voltage (Voc) of 633 mV in production. The distribution of cell efficiency was rather narrow, and low-efficiency cells (<17\%) were also very few. The power of the 60-cell module using the high-efficiency cells could reach 261 W as well. },
	doi = {10.1002/pip.v23.310.1002/pip.2437},
	url = {http://doi.wiley.com/10.1002/pip.v23.3http://doi.wiley.com/10.1002/pip.2437https://onlinelibrary.wiley.com/doi/full/10.1002/pip.2437https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002\%2Fpip.2437},
	author = {Yang, Y. M. and Yu, A. and Hsu, B. and Hsu, W. C. and Yang, A. and Lan, C. W.}
}
